SIS990DN-T1-GE3

Trans MOSFET N-CH 100V 4.1A 8-Pin PowerPAK 1212 T/R


  • Manufacturer: Vishay Siliconix
  • NO: 880-SIS990DN-T1-GE3
  • Package: PowerPAK® 1212-8 Dual
  • Datasheet: pdf
  • Stock: 6612
  • Description: Trans MOSFET N-CH 100V 4.1A 8-Pin PowerPAK 1212 T/R(Kg)

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  • Delivery: Delivery
  • Payment: payment

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.transport

SPECIFICATIONS

Parameters
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® 1212-8 Dual
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
Series TrenchFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Subcategory FET General Purpose Powers
Max Power Dissipation 25W
Terminal Form C BEND
JESD-30 Code S-PDSO-C6
Number of Elements 2
Number of Channels 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 8 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 85m Ω @ 8A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 250pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 8nC @ 10V
Rise Time 8ns
Drain to Source Voltage (Vdss) 100V
Fall Time (Typ) 6 ns
Turn-Off Delay Time 8 ns
Continuous Drain Current (ID) 12.1A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.085Ohm
Drain to Source Breakdown Voltage 100V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
Radiation Hardening No
RoHS Status ROHS3 Compliant

In Stock

Please send RFQ , we will respond immediately.