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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Quiescent Current | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IPZA60R099P7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2018 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipza60r099p7xksa1-datasheets-9716.pdf | TO-247-4 | 4 | 22 Weeks | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T4 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 117W Tc | 100A | 0.099Ohm | 105 mJ | N-Channel | 1952pF @ 400V | 99m Ω @ 10.5A, 10V | 4V @ 530μA | 31A Tc | 45nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IPB60R099P7ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb60r099p7atma1-datasheets-9719.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 18 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 650V | 600V | 117W Tc | 100A | 0.099Ohm | 105 mJ | N-Channel | 1952pF @ 400V | 99m Ω @ 10.5A, 10V | 4V @ 530μA | 31A Tc | 45nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| SIHG24N65E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sihg24n65ege3-datasheets-9723.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 14 Weeks | 38.000013g | Unknown | 145mOhm | 3 | No | 1 | Single | 250W | 1 | TO-247AC | 2.74nF | 24 ns | 84ns | 69 ns | 70 ns | 24A | 20V | 650V | 2V | 250W Tc | 145mOhm | 650V | N-Channel | 2740pF @ 100V | 145mOhm @ 12A, 10V | 4V @ 250μA | 24A Tc | 122nC @ 10V | 145 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| STI30N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-sti30n65m5-datasheets-9729.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.4mm | 10.75mm | 4.6mm | 3 | No SVHC | 3 | AVALANCHE ENERGY RATED | No | e3 | Matte Tin (Sn) | SINGLE | STI30N | 3 | 140W | 1 | FET General Purpose Power | 50 ns | 8ns | 10 ns | 50 ns | 22A | 25V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 4V | 140W Tc | 88A | 500 mJ | 650V | N-Channel | 2880pF @ 100V | 139m Ω @ 11A, 10V | 5V @ 250μA | 22A Tc | 64nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||
| STF40N60M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II Plus | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stf40n60m2-datasheets-9731.pdf | TO-220-3 Full Pack | 16 Weeks | 329.988449mg | 3 | EAR99 | No | STF40N | 1 | Single | 20.5 ns | 13.5ns | 11 ns | 96 ns | 34A | 25V | 600V | 40W Tc | 650V | N-Channel | 2500pF @ 100V | 88m Ω @ 17A, 10V | 4V @ 250μA | 34A Tc | 57nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| STI34N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-sti34n65m5-datasheets-9735.pdf | TO-262-3 Full Pack, I2Pak | 3 | 3 | EAR99 | SINGLE | STI34N | 190W | 1 | 8.7ns | 7.5 ns | 28A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 190W Tc | TO-262AA | 112A | 0.11Ohm | 510 mJ | 650V | N-Channel | 2700pF @ 100V | 110m Ω @ 14A, 10V | 5V @ 250μA | 28A Tc | 62.5nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP60R090CFD7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/infineontechnologies-ipp60r090cfd7xksa1-datasheets-9737.pdf | TO-220-3 | 18 Weeks | NOT SPECIFIED | NOT SPECIFIED | 600V | 125W Tc | N-Channel | 2103pF @ 400V | 90m Ω @ 11.4A, 10V | 4.5V @ 570μA | 25A Tc | 51nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQA44N30 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fqa44n30-datasheets-9741.pdf | 300V | 43.5A | TO-3P-3, SC-65-3 | 15.8mm | 20.1mm | 5mm | Lead Free | 3 | 4 Weeks | 6.401g | 3 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | No | 8541.29.00.95 | e3 | Tin (Sn) | Single | 310W | 1 | FET General Purpose Power | 85 ns | 470ns | 230 ns | 240 ns | 43.5A | 30V | SILICON | SWITCHING | 310W Tc | 174A | 0.069Ohm | 1700 mJ | 300V | N-Channel | 5600pF @ 25V | 69m Ω @ 21.75A, 10V | 5V @ 250μA | 43.5A Tc | 150nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| SIHW33N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/vishaysiliconix-sihw33n60ege3-datasheets-9749.pdf | TO-3P-3 Full Pack | 3 | 19 Weeks | 38.000013g | Unknown | 3 | yes | No | 1 | Single | 1 | FET General Purpose Powers | 56 ns | 90ns | 80 ns | 150 ns | 33A | 4V | SILICON | SWITCHING | 2V | 278W Tc | TO-247AD | 88A | 0.099Ohm | 600V | N-Channel | 3508pF @ 100V | 99m Ω @ 16.5A, 10V | 4V @ 250μA | 33A Tc | 150nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| STF21NM60ND | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FDmesh™ II | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stf21nm60nd-datasheets-9119.pdf | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | 3 | No SVHC | 3 | EAR99 | No | e3 | Matte Tin (Sn) - annealed | STF21 | 3 | Single | 30W | 1 | FET General Purpose Power | 18 ns | 16ns | 48 ns | 70 ns | 17A | 25V | SILICON | ISOLATED | SWITCHING | 4V | 30W Tc | TO-220AB | 68A | 0.22Ohm | 600V | N-Channel | 1800pF @ 50V | 220m Ω @ 8.5A, 10V | 5V @ 250μA | 17A Tc | 60nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||
| STP185N55F3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp185n55f3-datasheets-9682.pdf | TO-220-3 | 3 | 12 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | ULTRA-LOW RESISTANCE | No | e3 | Tin (Sn) | STP185 | 3 | Single | 330W | 1 | FET General Purpose Power | R-PSFM-T3 | 25 ns | 150ns | 50 ns | 110 ns | 120A | 20V | SILICON | SWITCHING | 330W Tc | TO-220AB | 480A | 0.0038Ohm | 1000 mJ | 55V | N-Channel | 6800pF @ 25V | 3.8m Ω @ 60A, 10V | 4V @ 250μA | 120A Tc | 100nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| STW21NM60ND | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FDmesh™ II | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stw21nm60nd-datasheets-9123.pdf | TO-247-3 | 15.75mm | 20.15mm | 5.15mm | Lead Free | 3 | 42 Weeks | No SVHC | 220mOhm | 3 | EAR99 | No | e3 | Tin (Sn) | STW21N | 3 | Single | 140W | 1 | FET General Purpose Power | 18 ns | 16ns | 48 ns | 70 ns | 17A | 25V | SILICON | SWITCHING | 4V | 140W Tc | 68A | 600V | N-Channel | 1800pF @ 50V | 220m Ω @ 8.5A, 10V | 5V @ 250μA | 17A Tc | 60nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||
| SIHP35N60EF-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | EF | Through Hole | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihp35n60efge3-datasheets-9693.pdf | TO-220-3 | 14 Weeks | TO-220AB | 600V | 250W Tc | N-Channel | 2568pF @ 100V | 97mOhm @ 17A, 10V | 4V @ 250μA | 32A Tc | 134nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQA160N08 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/onsemiconductor-fqa160n08-datasheets-9696.pdf | 80V | 160A | TO-3P-3, SC-65-3 | 15.8mm | 18.9mm | 5mm | Lead Free | 3 | 10 Weeks | 6.401g | 3 | ACTIVE (Last Updated: 6 days ago) | yes | EAR99 | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 375W | 1 | FET General Purpose Power | Not Qualified | 85 ns | 970ns | 410 ns | 260 ns | 160A | 25V | SILICON | SWITCHING | 375W Tc | 640A | 0.007Ohm | 80V | N-Channel | 7900pF @ 25V | 7m Ω @ 80A, 10V | 4V @ 250μA | 160A Tc | 290nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||
| STFI13N95K3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stf13n95k3-datasheets-9582.pdf | TO-262-3 Full Pack, I2Pak | Lead Free | 3 | EAR99 | No | STFI13N | Single | FET General Purpose Powers | 18 ns | 16ns | 21 ns | 50 ns | 10A | 30V | 950V | 40W Tc | N-Channel | 1620pF @ 100V | 850m Ω @ 5A, 10V | 5V @ 100μA | 10A Tc | 51nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQA90N15 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fqa90n15-datasheets-9637.pdf | 150V | 90A | TO-3P-3, SC-65-3 | 15.8mm | 18.9mm | 5mm | Lead Free | 3 | 10 Weeks | 6.401g | No SVHC | 3 | ACTIVE (Last Updated: 10 hours ago) | yes | EAR99 | Tin | e3 | NOT SPECIFIED | Single | NOT SPECIFIED | 375W | 1 | FET General Purpose Power | Not Qualified | 105 ns | 760ns | 410 ns | 470 ns | 90A | 25V | SILICON | SWITCHING | 4V | 375W Tc | 150V | N-Channel | 8700pF @ 25V | 18m Ω @ 45A, 10V | 4V @ 250μA | 90A Tc | 285nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||
| HUF75345S3ST | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1999 | /files/onsemiconductor-huf75345s3st-datasheets-9095.pdf | 55V | 75A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 8 Weeks | 1.31247g | 7mOhm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 325W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 14 ns | 118ns | 26 ns | 42 ns | 75A | 20V | SILICON | DRAIN | SWITCHING | 325W Tc | 55V | N-Channel | 4000pF @ 25V | 7m Ω @ 75A, 10V | 4V @ 250μA | 75A Tc | 275nC @ 20V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IRF740SPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2006 | /files/vishaysiliconix-irf740spbf-datasheets-9653.pdf | 400V | 10A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 11 Weeks | 1.437803g | Unknown | 550mOhm | 3 | No | 1 | Single | 125W | 1 | D2PAK | 1.4nF | 14 ns | 27ns | 24 ns | 50 ns | 10A | 20V | 400V | 4V | 3.1W Ta 125W Tc | 550mOhm | 400V | N-Channel | 1400pF @ 25V | 550mOhm @ 6A, 10V | 4V @ 250μA | 10A Tc | 63nC @ 10V | 550 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IRF300P227 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | StrongIRFET™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | /files/infineontechnologies-irf300p227-datasheets-9658.pdf | TO-247-3 | 26 Weeks | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 300V | 313W Tc | N-Channel | 4893pF @ 50V | 40m Ω @ 30A, 10V | 4V @ 270μA | 50A Tc | 107nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STW15NM60ND | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FDmesh™ II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stw15nm60nd-datasheets-9663.pdf | TO-247-3 | 15.75mm | 20.15mm | 5.15mm | Lead Free | 3 | No SVHC | 299mOhm | 3 | EAR99 | No | e3 | Tin (Sn) | STW15N | 3 | Single | 125W | 1 | FET General Purpose Power | 17 ns | 20ns | 28 ns | 47 ns | 14A | 25V | SILICON | SWITCHING | 4V | 125W Tc | TO-247AC | 56A | 600V | N-Channel | 1250pF @ 50V | 299m Ω @ 7A, 10V | 5V @ 250μA | 14A Tc | 40nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||
| STW18NM60ND | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FDmesh™ II | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp18nm60nd-datasheets-7263.pdf | TO-247-3 | 15.75mm | 20.15mm | 5.15mm | Lead Free | 3 | 3 | EAR99 | No | STW18N | Single | 1 | 55 ns | 15.5ns | 18 ns | 13 ns | 13A | 25V | SILICON | DRAIN | SWITCHING | 600V | 110W Tc | 52A | 0.29Ohm | 187 mJ | 650V | N-Channel | 1030pF @ 50V | 290m Ω @ 6.5A, 10V | 5V @ 250μA | 13A Tc | 34nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||
| SIHB28N60EF-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sihb28n60efge3-datasheets-9668.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 2 | 21 Weeks | 1.946308g | GULL WING | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | R-PSSO-G2 | 24 ns | 40ns | 39 ns | 82 ns | 28A | 20V | SILICON | SWITCHING | 600V | 600V | 250W Tc | 75A | N-Channel | 2714pF @ 100V | 123m Ω @ 14A, 10V | 4V @ 250μA | 28A Tc | 120nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| STF6N62K3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH3™ | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stu6n62k3-datasheets-2052.pdf | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | Lead Free | 3 | 12 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | ULTRA LOW-ON RESISTANCE | No | e3 | Matte Tin (Sn) - annealed | STF6N | 3 | Single | 90W | 1 | FET General Purpose Power | 22 ns | 12.5ns | 19 ns | 49 ns | 5.5A | 30V | SILICON | ISOLATED | SWITCHING | 3.75V | 30W Tc | TO-220AB | 22A | 620V | N-Channel | 875pF @ 50V | 1.28 Ω @ 2.8A, 10V | 4.5V @ 50μA | 5.5A Tc | 34nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| SIHF35N60EF-GE3 | Vishay Siliconix | $5.24 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | EF | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihf35n60efge3-datasheets-9677.pdf | TO-220-3 Full Pack | 21 Weeks | TO-220 Full Pack | 600V | 39W Tc | N-Channel | 2568pF @ 100V | 97mOhm @ 17A, 10V | 4V @ 250μA | 32A Tc | 134nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP30N60E-E3 | Vishay Siliconix | $5.02 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihp30n60ee3-datasheets-9594.pdf | TO-220-3 | 10.51mm | 15.49mm | 4.65mm | Lead Free | 17 Weeks | 6.000006g | Unknown | 125mOhm | 3 | No | 1 | Single | 250W | 1 | TO-220AB | 2.6nF | 19 ns | 32ns | 36 ns | 63 ns | 29A | 20V | 600V | 2V | 250W Tc | 125mOhm | 600V | N-Channel | 2600pF @ 100V | 125mOhm @ 15A, 10V | 4V @ 250μA | 29A Tc | 130nC @ 10V | 125 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| STI260N6F6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DeepGATE™, STripFET™ VI | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-sti260n6f6-datasheets-9602.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.4mm | 10.75mm | 4.6mm | Lead Free | 3 | 3MOhm | 3 | yes | EAR99 | No | e3 | Tin (Sn) | STI260N | 3 | Single | 300W | 1 | FET General Purpose Power | 31.4 ns | 165ns | 62.6 ns | 144.4 ns | 120A | 20V | SILICON | SWITCHING | 75V | 300W Tc | 480A | 60V | N-Channel | 11400pF @ 25V | 3m Ω @ 60A, 10V | 4V @ 250μA | 120A Tc | 183nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| FCP11N60F | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/onsemiconductor-fcp11n60f-datasheets-9605.pdf | 600V | 11A | TO-220-3 | 10.1mm | 9.4mm | 4.7mm | Lead Free | 3 | 12 Weeks | 1.8g | No SVHC | 380MOhm | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 125W | 1 | FET General Purpose Power | Not Qualified | 34 ns | 98ns | 56 ns | 119 ns | 11A | 30V | 600V | SILICON | SWITCHING | 100μA | 5V | 125W Tc | TO-220AB | 600V | N-Channel | 1490pF @ 25V | 5 V | 380m Ω @ 5.5A, 10V | 5V @ 250μA | 11A Tc | 52nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||
| IRF135B203 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | StrongIRFET™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/infineontechnologies-irf135b203-datasheets-9614.pdf | TO-220-3 | 12 Weeks | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 129A | 135V | 441W Tc | N-Channel | 9700pF @ 50V | 8.4m Ω @ 77A, 10V | 4V @ 250μA | 129A Tc | 270nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPW60R105CFD7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipw60r105cfd7xksa1-datasheets-9626.pdf | TO-247-3 | 18 Weeks | NOT SPECIFIED | NOT SPECIFIED | 600V | 106W Tc | N-Channel | 1752pF @ 400V | 105m Ω @ 9.3A, 10V | 4.5V @ 470μA | 21A Tc | 42nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQA24N60 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/onsemiconductor-fqa24n60-datasheets-9629.pdf | 600V | 23.5A | TO-3P-3, SC-65-3 | 15.8mm | 18.9mm | 5mm | Lead Free | 3 | 9 Weeks | 6.401g | No SVHC | 3 | ACTIVE (Last Updated: 6 days ago) | yes | EAR99 | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 310W | 1 | FET General Purpose Power | Not Qualified | 90 ns | 270ns | 170 ns | 200 ns | 23.5A | 30V | SILICON | SWITCHING | 5V | 310W Tc | 94A | 0.24Ohm | 600V | N-Channel | 5500pF @ 25V | 240m Ω @ 11.8A, 10V | 5V @ 250μA | 23.5A Tc | 145nC @ 10V | 10V | ±30V |
