IRF135B203

IRF135B203 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • NO: 376-IRF135B203
  • Package: TO-220-3
  • Datasheet: pdf
  • Stock: 7952
  • Description: IRF135B203 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 12 Weeks
Mounting Type Through Hole
Package / Case TO-220-3
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2013
Series StrongIRFET™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Power Dissipation-Max 441W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 8.4m Ω @ 77A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 9700pF @ 50V
Current - Continuous Drain (Id) @ 25°C 129A Tc
Gate Charge (Qg) (Max) @ Vgs 270nC @ 10V
Drain to Source Voltage (Vdss) 135V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 129A
RoHS Status ROHS3 Compliant
IRF135B203 Description

IRF135B203 transistors, N-Channel FET Type, drain to Source Voltage (Vdss) is 135V, continuous Drain Current (ID) is 129A, through Hole, maximum power dissipation is 441W Tc, drive Voltage (Max Rds On,Min Rds On) is 10V.
IRF135B203 Features

● Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
● Fully Characterized Capacitance and Avalanche SOA
● Enhanced body diode dV/dt and dI/dt Capability
● Lead-Free
● RoHS Compliant
● Halogen-Free
IRF135B203 Applications

● Brushed Motor drive applications
● BLDC Motor drive applications
● Battery powered circuits
● Half-bridge and full-bridge topologies
● Synchronous rectifier applications
● Resonant mode power supplies
● OR-ing and redundant power switches
● DC/DC and AC/DC converters
● DC/AC Inverters

In Stock

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