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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| DMP1022UFDE-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/diodesincorporated-dmp1022ufde7-datasheets-0258.pdf | 6-UDFN Exposed Pad | 2.05mm | 580μm | 2.05mm | Lead Free | 3 | No SVHC | 6 | yes | EAR99 | HIGH RELIABILITY | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | 260 | 6 | 2 | Single | 40 | 2.03W | 1 | Other Transistors | S-PDSO-N3 | 20 ns | 28ns | 93 ns | 117 ns | 9.1A | 8V | SILICON | DRAIN | SWITCHING | 12V | 660mW Ta | P-Channel | 2953pF @ 4V | 16m Ω @ 8.2A, 4.5V | 800mV @ 250μA | 9.1A Ta | 42.6nC @ 5V | 1.2V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||
| RSL020P03TR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/rohmsemiconductor-rsl020p03tr-datasheets-0416.pdf | 6-SMD, Flat Leads | 6 | 20 Weeks | 6 | yes | EAR99 | No | e2 | TIN COPPER | DUAL | 260 | 6 | 10 | 1W | 1 | Other Transistors | 11 ns | 11ns | 11 ns | 35 ns | 2A | 20V | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 1W Ta | 2A | 0.12Ohm | -30V | P-Channel | 350pF @ 10V | 120m Ω @ 2A, 10V | 2A Ta | 3.9nC @ 5V | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| STW30NM60N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stw30nm60n-datasheets-0310.pdf | TO-247-3 | Lead Free | 3 | 130mOhm | unknown | e3 | TIN | NOT SPECIFIED | STW30N | 3 | Single | NOT SPECIFIED | 190W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 24ns | 70 ns | 125 ns | 25A | 30V | SILICON | SWITCHING | 190W Tc | TO-247AC | 900 mJ | 600V | N-Channel | 2700pF @ 50V | 130m Ω @ 12.5A, 10V | 4V @ 250μA | 25A Tc | 91nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
| PMN55ENEH | Nexperia USA Inc. | $0.46 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/nexperiausainc-pmn55enex-datasheets-0916.pdf | SC-74, SOT-457 | 4 Weeks | 60V | 560mW Ta 6.25mW Tc | N-Channel | 646pF @ 30V | 60m Ω @ 3.4A, 10V | 2.7V @ 250μA | 4.5A Ta | 19nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3134K-TP | Micro Commercial Components (MCC) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/microcommercialco-si3134ktp-datasheets-0319.pdf | SOT-723 | 22 Weeks | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 20V | 150mW Ta | N-Channel | 120pF @ 16V | 800m Ω @ 450mA, 1.8V | 1V @ 250μA | 750mA | 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMG4812SSS-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/diodesincorporated-dmg4812sss13-datasheets-0346.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 7 Weeks | No SVHC | 8 | yes | EAR99 | HIGH RELIABILITY | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 40 | 1 | FET General Purpose Powers | Not Qualified | 6.62 ns | 8.73ns | 4.69 ns | 36.41 ns | 8A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 1.54W Ta | 8A | 45A | 0.015Ohm | N-Channel | 1849pF @ 15V | 15m Ω @ 10.7A, 10V | 2.3V @ 250μA | 8A Ta | 18.5nC @ 10V | Schottky Diode (Body) | 4.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||
| DMN3030LFG-7 | Diodes Incorporated | $1.83 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmn3030lfg7-datasheets-0358.pdf | 8-PowerVDFN | 14 Weeks | 72.007789mg | No SVHC | 8 | no | EAR99 | not_compliant | e3 | Matte Tin (Sn) | 260 | 1 | 40 | FET General Purpose Power | 2.5 ns | 6.6ns | 6.3 ns | 19 ns | 5.3A | 25V | Single | 900mW Ta | 30V | N-Channel | 751pF @ 10V | 18m Ω @ 10A, 10V | 2.1V @ 250μA | 5.3A Ta | 17.4nC @ 10V | 4.5V 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN3033LDM-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/diodesincorporated-dmn3033ldm7-datasheets-0328.pdf | SOT-23-6 | 3mm | 1.1mm | 1.6mm | Lead Free | 6 | 7 Weeks | No SVHC | 6 | yes | EAR99 | HIGH RELIABILITY | Tin | No | e3 | DUAL | GULL WING | 260 | 6 | 1 | 40 | 2W | 1 | FET General Purpose Power | 11 ns | 7ns | 30 ns | 63 ns | 6.9A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | 2W Ta | 20A | 0.033Ohm | 30V | N-Channel | 755pF @ 10V | 33m Ω @ 6.9A, 10V | 2.1V @ 250μA | 6.9A Ta | 13nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| FCH070N60E | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fch070n60e-datasheets-9342.pdf | TO-247-3 | 12 Weeks | 6.39g | ACTIVE (Last Updated: 5 days ago) | yes | EAR99 | not_compliant | 8541.29.00.95 | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 52A | 600V | 481W Tc | N-Channel | 4925pF @ 380V | 70m Ω @ 26A, 10V | 3.5V @ 250μA | 52A Tc | 166nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG73N60E-GE3 | Vishay Siliconix | $9.82 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg73n60ege3-datasheets-0381.pdf | TO-247-3 | 15.87mm | 20.82mm | 5.31mm | Lead Free | 3 | 14 Weeks | 38.000013g | Unknown | 39mOhm | 3 | AVALANCHE RATED | Tin | No | 3 | 1 | Single | 520W | 1 | FET General Purpose Power | 63 ns | 105ns | 120 ns | 290 ns | 73A | 20V | SILICON | SWITCHING | 2V | 520W Tc | TO-247AC | 600V | N-Channel | 7700pF @ 100V | 39m Ω @ 36A, 10V | 4V @ 250μA | 73A Tc | 362nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| 2V7002LT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/onsemiconductor-2v7002lt1g-datasheets-3789.pdf | TO-236-3, SC-59, SOT-23-3 | Lead Free | 3 | 20 Weeks | 3 | ACTIVE, NOT REC (Last Updated: 1 day ago) | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | YES | DUAL | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300mW | 1 | FET General Purpose Power | 20 ns | 40 ns | 115mA | 20V | SILICON | SWITCHING | 60V | 60V | 225mW Ta | 5 pF | N-Channel | 50pF @ 25V | 7.5 Ω @ 500mA, 10V | 2.5V @ 250μA | 115mA Tc | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| SCT2080KEHRC11 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | 175°C TJ | 1 (Unlimited) | SiCFET (Silicon Carbide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-sct2080kehrc11-datasheets-0253.pdf | TO-247-3 | 19 Weeks | NOT SPECIFIED | NOT SPECIFIED | 1200V | N-Channel | 2080pF @ 800V | 117m Ω @ 10A, 18V | 4V @ 4.4mA | 40A Tc | 106nC @ 18V | 18V | +22V, -6V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN32N100P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Polar™ | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/ixys-ixfn32n100p-datasheets-0268.pdf | SOT-227-4, miniBLOC | Lead Free | 30 Weeks | 320mOhm | 4 | No | 690W | 1 | SOT-227B | 14.2nF | 55ns | 43 ns | 76 ns | 27A | 30V | 1000V | 690W Tc | 320mOhm | 1kV | N-Channel | 14200pF @ 25V | 320mOhm @ 16A, 10V | 6.5V @ 1mA | 27A Tc | 225nC @ 10V | 320 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SCT3060ARC14 | ROHM Semiconductor | $62.75 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-sct3060arc14-datasheets-0277.pdf | TO-247-4 | 4 | 8 Weeks | not_compliant | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T4 | SILICON CARBIDE | SINGLE WITH BUILT-IN DIODE | SWITCHING | 650V | 650V | 165W | 39A | 97A | 0.078Ohm | N-Channel | 852pF @ 500V | 78m Ω @ 13A, 18V | 5.6V @ 6.67mA | 39A Tc | 58nC @ 18V | 18V | +22V, -4V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMP2160U-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/diodesincorporated-dmp2160u7-datasheets-0216.pdf | TO-236-3, SC-59, SOT-23-3 | 2.9mm | 1mm | 1.3mm | Lead Free | 3 | 7.994566mg | No SVHC | 80mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 40 | 1.4W | 1 | Other Transistors | 12.5 ns | 10.3ns | 10.3 ns | 46.5 ns | 3.2A | 12V | SILICON | SWITCHING | 20V | -600mV | 1.4W Ta | -20V | P-Channel | 627pF @ 10V | 80m Ω @ 1.5A, 4.5V | 900mV @ 250μA | 3.2A Ta | 1.8V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||
| IMZ120R060M1HXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolSiC™ | Through Hole | -55°C~175°C TJ | Not Applicable | SiCFET (Silicon Carbide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-imz120r060m1hxksa1-datasheets-0289.pdf | TO-247-4 | 20 Weeks | 1.2kV | 150W Tc | N-Channel | 1.06nF @ 800V | 78m Ω @ 13A, 18V | 5.7V @ 5.6mA | 36A Tc | 31nC @ 18V | 15V 18V | +23V, -7V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SCT3080KLHRC11 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | 175°C TJ | 1 (Unlimited) | SiCFET (Silicon Carbide) | ROHS3 Compliant | /files/rohmsemiconductor-sct3080klhrc11-datasheets-0291.pdf | TO-247-3 | 21 Weeks | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 1200V | 165W | N-Channel | 785pF @ 800V | 104m Ω @ 10A, 18V | 5.6V @ 5mA | 31A Tc | 60nC @ 18V | 18V | +22V, -4V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SCT3080KRC14 | ROHM Semiconductor | $13.49 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 175°C TJ | Tube | 1 (Unlimited) | SiCFET (Silicon Carbide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-sct3080krc14-datasheets-0173.pdf | TO-247-4 | 4 | 8 Weeks | not_compliant | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T4 | SINGLE WITH BUILT-IN DIODE | SWITCHING | 1200V | 1200V | 165W | 31A | 77A | 0.104Ohm | N-Channel | 785pF @ 800V | 104m Ω @ 10A, 18V | 5.6V @ 5mA | 31A Tc | 60nC @ 18V | 18V | +22V, -4V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMG2302U-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/diodesincorporated-dmg2302u7-datasheets-0297.pdf | TO-236-3, SC-59, SOT-23-3 | 3mm | 1mm | 1.4mm | Lead Free | 3 | 5 Weeks | 7.994566mg | No SVHC | 90MOhm | 3 | yes | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 40 | 800mW | 1 | FET General Purpose Powers | 7.4 ns | 9.8ns | 6.7 ns | 28.1 ns | 4.2A | 8V | SILICON | SWITCHING | 1V | 800mW Ta | 20V | N-Channel | 594.3pF @ 10V | 90m Ω @ 3.6A, 4.5V | 1V @ 50μA | 4.2A Ta | 7nC @ 4.5V | 2.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||
| IMW120R140M1HXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolSiC™ | Through Hole | -55°C~175°C TJ | Not Applicable | SiCFET (Silicon Carbide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-imw120r140m1hxksa1-datasheets-0191.pdf | TO-247-3 | 20 Weeks | 1.2kV | 94W Tc | N-Channel | 454pF @ 800V | 182m Ω @ 6A, 18V | 5.7V @ 2.5mA | 19A Tc | 13nC @ 18V | 15V 18V | +23V, -7V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVA4001NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2007 | /files/onsemiconductor-nta4001nt1g-datasheets-5233.pdf | SOT-416 | Lead Free | 8 Weeks | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | e3 | Tin (Sn) | YES | 300mW | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300mW | FET General Purpose Power | 20pF | 13 ns | 15ns | 60 ns | 98 ns | 238mA | 10V | N-CHANNEL | 20V | METAL-OXIDE SEMICONDUCTOR | 1.5Ohm | 20V | 3 Ω | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STW88N65M5-4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M5 | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stw88n65m54-datasheets-0199.pdf | TO-247-4 | Lead Free | 26 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STW88N | NOT SPECIFIED | 84A | 650V | 450W Tc | N-Channel | 8825pF @ 100V | 29m Ω @ 42A, 10V | 5V @ 250μA | 84A Tc | 204nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N7002BKM,315 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/nexperiausainc-2n7002bkm315-datasheets-0182.pdf | SC-101, SOT-883 | Lead Free | 3 | 20 Weeks | 3 | LOGIC LEVEL COMPATIBLE | Tin | No | e3 | YES | BOTTOM | 3 | Single | 715mW | 1 | 5 ns | 6ns | 7 ns | 12 ns | 450mA | 20V | 60V | SILICON | DRAIN | SWITCHING | 360mW Ta | 0.45A | 60V | N-Channel | 50pF @ 10V | 1.6 Ω @ 500mA, 10V | 2.1V @ 250μA | 450mA Ta | 0.6nC @ 4.5V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| DMG3415U-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/diodesincorporated-dmg3415u7-datasheets-0186.pdf&product=diodesincorporated-dmg3415u7-6831517 | TO-236-3, SC-59, SOT-23-3 | 2.9mm | 1mm | 1.3mm | Lead Free | 3 | 5 Weeks | 7.994566mg | No SVHC | 42.5mOhm | 3 | yes | EAR99 | HIGH RELIABILITY | Tin | No | e3 | DUAL | GULL WING | 260 | 3 | 1 | Single | 40 | 900mW | 1 | Other Transistors | 71 ns | 117ns | 393 ns | 795 ns | 4A | 8V | SILICON | SWITCHING | 20V | -550mV | 900mW Ta | 4A | -20V | P-Channel | 294pF @ 10V | -550 mV | 39m Ω @ 4A, 4.5V | 1V @ 250μA | 4A Ta | 9.1nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||
| STW36N55M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stw36n55m5-datasheets-0233.pdf | TO-247-3 | 15.75mm | 20.15mm | 5.15mm | Lead Free | 3 | 17 Weeks | 3 | EAR99 | No | STW36N | Single | 190W | 1 | FET General Purpose Power | 56 ns | 56 ns | 33A | 25V | SILICON | SWITCHING | 190W Tc | 0.08Ohm | 550V | N-Channel | 2950pF @ 100V | 80m Ω @ 16.5A, 10V | 5V @ 250μA | 33A Tc | 62nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||
| STI32N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp32n65m5-datasheets-9831.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.4mm | 10.75mm | 4.6mm | 3 | 3 | yes | EAR99 | AVALANCHE ENERGY RATED | No | e3 | Matte Tin (Sn) | STI32N | 3 | Single | 150W | 1 | FET General Purpose Power | 53 ns | 12ns | 16 ns | 53 ns | 24A | 25V | SILICON | SWITCHING | 150W Tc | 96A | 0.119Ohm | 650 mJ | 650V | N-Channel | 3320pF @ 100V | 119m Ω @ 12A, 10V | 5V @ 250μA | 24A Tc | 72nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||
| SCT3022KLGC11 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 175°C TJ | 1 (Unlimited) | SiCFET (Silicon Carbide) | ROHS3 Compliant | TO-247-3 | 21 Weeks | NOT SPECIFIED | NOT SPECIFIED | 1200V | 427W | N-Channel | 2879pF @ 800V | 28.6m Ω @ 36A, 18V | 5.6V @ 18.2mA | 95A Tc | 178nC @ 10V | 18V | +22V, -4V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STY100NM60N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-sty100nm60n-datasheets-0137.pdf | TO-247-3 | 15.9mm | 20.3mm | 5.3mm | Lead Free | 12 Weeks | 247 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | STY100 | Single | 625W | 1 | 45 ns | 52ns | 81 ns | 372 ns | 98A | 25V | 625W Tc | 600V | N-Channel | 9600pF @ 50V | 29m Ω @ 49A, 10V | 4V @ 250μA | 98A Tc | 330nC @ 10V | 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SCT3040KLHRC11 | ROHM Semiconductor | $79.44 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | 175°C TJ | 1 (Unlimited) | SiCFET (Silicon Carbide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-sct3040klhrc11-datasheets-0141.pdf | TO-247-3 | 21 Weeks | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 1200V | 262W | N-Channel | 1337pF @ 800V | 52m Ω @ 20A, 18V | 5.6V @ 10mA | 55A Ta | 107nC @ 18V | 18V | +22V, -4V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FCA76N60N | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SupreMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/onsemiconductor-fca76n60n-datasheets-0147.pdf | TO-3P-3, SC-65-3 | 15.8mm | 20.1mm | 5mm | 3 | 12 Weeks | 6.401g | No SVHC | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 543W | 1 | FET General Purpose Power | 34 ns | 24ns | 32 ns | 235 ns | 76A | 30V | SILICON | DRAIN | SWITCHING | 2V | 543W Tc | 228A | 8022 mJ | 600V | N-Channel | 12385pF @ 100V | 36m Ω @ 38A, 10V | 4V @ 250μA | 76A Tc | 285nC @ 10V | 10V | ±30V |
