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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| STF33N60M6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M6 | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stf33n60m6-datasheets-1872.pdf | TO-220-3 Full Pack | 16 Weeks | STF33N | 600V | 35W Tc | N-Channel | 1515pF @ 100V | 125m Ω @ 12.5A, 10V | 4.75V @ 250μA | 25A Tc | 33.4nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STP50NF25 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp50nf25-datasheets-1875.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | 12 Weeks | No SVHC | 69MOhm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | Tin | No | STP50N | 3 | Single | 160W | 1 | FET General Purpose Power | 45 ns | 26ns | 20 ns | 63 ns | 22A | 20V | 250V | SILICON | SWITCHING | 3V | 160W Tc | TO-220AB | 45A | 250V | N-Channel | 2670pF @ 25V | 3 V | 69m Ω @ 22A, 10V | 4V @ 250μA | 45A Tc | 68.2nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IRFBC40SPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irfbc40spbf-datasheets-1879.pdf | 600V | 6.2A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 11 Weeks | 1.437803g | Unknown | 3 | Tin | No | 1 | Single | 3.1W | 1 | D2PAK | 1.3nF | 13 ns | 18ns | 20 ns | 55 ns | 6.2A | 20V | 600V | 4V | 3.1W Ta 130W Tc | 1.2Ohm | 600V | N-Channel | 1300pF @ 25V | 1.2Ohm @ 3.7A, 10V | 4V @ 250μA | 6.2A Tc | 60nC @ 10V | 1.2 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IRFP340PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfp340pbf-datasheets-1883.pdf | 400V | 11A | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 8 Weeks | 38.000013g | Unknown | 550mOhm | 3 | No | 1 | Single | 150W | 1 | TO-247-3 | 1.4nF | 14 ns | 27ns | 24 ns | 50 ns | 11A | 20V | 400V | 4V | 150W Tc | 550mOhm | 400V | N-Channel | 1400pF @ 25V | 4 V | 550mOhm @ 6.6A, 10V | 4V @ 250μA | 11A Tc | 62nC @ 10V | 550 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| STF16N90K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ DK5 | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stf16n90k5-datasheets-1888.pdf | TO-220-3 Full Pack | 17 Weeks | 900V | 30W Tc | N-Channel | 1027pF @ 100V | 330m Ω @ 7.5A, 10V | 5V @ 100μA | 15A Tc | 29.7nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STW15NK50Z | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -50°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stw15nk50z-datasheets-1890.pdf | 500V | 14A | TO-247-3 | 15.75mm | 20.15mm | 5.15mm | Lead Free | 3 | No SVHC | 340mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | HIGH VOLTAGE | No | e3 | Tin (Sn) | STW15N | 3 | Single | 160W | 1 | FET General Purpose Power | 20 ns | 23ns | 15 ns | 62 ns | 14A | 30V | SILICON | SWITCHING | 3.75V | 160W Tc | 56A | 500V | N-Channel | 2260pF @ 25V | 340m Ω @ 7A, 10V | 4.5V @ 100μA | 14A Tc | 106nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| SIHP12N50C-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/vishaysiliconix-sihf12n50ce3-datasheets-6578.pdf | TO-220-3 | Lead Free | 3 | 8 Weeks | 6.000006g | Unknown | 555mOhm | 3 | yes | AVALANCHE RATED | No | 260 | 3 | 1 | Single | 40 | 208W | 1 | FET General Purpose Power | 18 ns | 35ns | 6 ns | 23 ns | 12A | 500V | SILICON | DRAIN | SWITCHING | 3V | 208W Tc | TO-220AB | 28A | N-Channel | 1375pF @ 25V | 555m Ω @ 4A, 10V | 5V @ 250μA | 12A Tc | 48nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| SIHP21N60EF-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sihp21n60efge3-datasheets-1837.pdf | TO-220-3 | Lead Free | 3 | 14 Weeks | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | 21A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 227W Tc | TO-220AB | 53A | 0.176Ohm | 367 mJ | N-Channel | 2030pF @ 100V | 176m Ω @ 11A, 10V | 4V @ 250μA | 21A Tc | 84nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| STF26N60DM6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ DM6 | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stf26n60dm6-datasheets-1843.pdf | TO-220-3 Full Pack | 16 Weeks | compliant | NOT SPECIFIED | STF26 | NOT SPECIFIED | 600V | 30W Tc | N-Channel | 940pF @ 100V | 195m Ω @ 9A, 10V | 4.75V @ 250μA | 18A Tc | 24nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHB22N60E-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sihb22n60ee3-datasheets-1845.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 19 Weeks | 1.437803g | 3 | AVALANCHE RATED | No | GULL WING | 3 | 1 | Single | 1 | R-PSSO-G2 | 18 ns | 68ns | 54 ns | 66 ns | 21A | 20V | SILICON | SWITCHING | 600V | 600V | 227W Tc | 56A | N-Channel | 1920pF @ 100V | 180m Ω @ 11A, 10V | 4V @ 250μA | 21A Tc | 86nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
| SIHP22N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | /files/vishaysiliconix-sihp22n60ege3-datasheets-1850.pdf | TO-220-3 | 10.51mm | 9.01mm | 4.65mm | Lead Free | 3 | 14 Weeks | 6.000006g | Unknown | 180mOhm | 3 | Tin | No | 1 | Single | 227W | 1 | 18 ns | 68ns | 54 ns | 59 ns | 21A | 20V | SILICON | SWITCHING | 600V | 600V | 2V | 227W Tc | TO-220AB | 56A | N-Channel | 1920pF @ 100V | 180m Ω @ 11A, 10V | 4V @ 250μA | 21A Tc | 86nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| AO3401A | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | TO-236-3, SC-59, SOT-23-3 | 1.25mm | Lead Free | 3 | 3 | yes | EAR99 | No | DUAL | GULL WING | 3 | 1 | 1.4W | 1 | 150°C | 6.5 ns | 41 ns | -4A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | -900mV | 1.4W Ta | 4A | 0.05Ohm | -30V | P-Channel | 1200pF @ 15V | 44m Ω @ 4.3A, 10V | 1.3V @ 250μA | 4A Ta | 12.2nC @ 4.5V | 2.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||
| RSE002N06TL | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | SC-75, SOT-416 | Lead Free | 3 | 3 | yes | EAR99 | No | e1 | TIN SILVER COPPER | DUAL | GULL WING | 260 | 3 | 10 | 1 | FET General Purpose Power | 3.5 ns | 5ns | 28 ns | 18 ns | 250mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | 150mW Ta | 0.25A | N-Channel | 15pF @ 25V | 2.4 Ω @ 250mA, 10V | 2.3V @ 1mA | 250mA Ta | 2.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| DMN5L06KQ-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -65°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/diodesincorporated-dmn5l06kq7-datasheets-1637.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 18 Weeks | yes | EAR99 | ESD PROTECTION, HIGH RELIABILITY, LOW THRESHOLD | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | 260 | 3 | 40 | 1 | FET General Purpose Power | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 50V | 50V | 350mW | 0.3A | 3Ohm | 5 pF | N-Channel | 50pF @ 25V | 2 Ω @ 50mA, 5V | 1V @ 250μA | 300mA Ta | 1.8V 5V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| DMP3098LQ-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/diodesincorporated-dmp3098lq7-datasheets-1713.pdf | TO-236-3, SC-59, SOT-23-3 | 16 Weeks | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 30V | 1.08W Ta | P-Channel | 1008pF @ 25V | 70m Ω @ 3.8A, 10V | 2.1V @ 250μA | 3.8A Ta | 8nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STP26N60DM6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ DM6 | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp26n60dm6-datasheets-1793.pdf | TO-220-3 | 16 Weeks | compliant | NOT SPECIFIED | STP26N | NOT SPECIFIED | 600V | 130W Tc | N-Channel | 940pF @ 100V | 195m Ω @ 9A, 10V | 4.75V @ 250μA | 18A Tc | 24nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFI740GLCPBF | Vishay Siliconix | $2.33 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfi740glcpbf-datasheets-1795.pdf | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | Lead Free | 8 Weeks | 6.000006g | 550mOhm | 3 | No | 1 | Single | 40W | 1 | TO-220-3 | 1.1nF | 11 ns | 31ns | 20 ns | 25 ns | 5.7A | 30V | 400V | 40W Tc | 550mOhm | N-Channel | 1100pF @ 25V | 550mOhm @ 3.4A, 10V | 4V @ 250μA | 5.7A Tc | 39nC @ 10V | 550 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| STP20NM50 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ | Through Hole | Through Hole | -65°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp20nm50-datasheets-1802.pdf | 500V | 20A | TO-220-3 | 10.4mm | 9.15mm | 4.6mm | Lead Free | 3 | 16 Weeks | 4.535924g | No SVHC | 250mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Tin (Sn) | STP20N | 3 | Single | 192W | 1 | FET General Purpose Power | 24 ns | 16ns | 8.5 ns | 9 ns | 20A | 30V | SILICON | SWITCHING | 4V | 192W Tc | TO-220AB | 80A | 650 mJ | 500V | N-Channel | 1480pF @ 25V | 250m Ω @ 10A, 10V | 5V @ 250μA | 20A Tc | 56nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| SI3415A-TP | Micro Commercial Components (MCC) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2005 | /files/microcommercialco-si3415atp-datasheets-1758.pdf | TO-236-3, SC-59, SOT-23-3 | 22 Weeks | 260 | 10 | 20V | 1.4W | P-Channel | 950pF @ 10V | 45m Ω @ 4A, 4.5V | 900mV @ 250μA | 4A | 12nC @ 4.5V | 2.5V 4.5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG22N50D-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sihg22n50de3-datasheets-1811.pdf | TO-247-3 | Lead Free | 3 | 13 Weeks | 38.000013g | 3 | No | SINGLE | 1 | 312W | 1 | 21 ns | 42ns | 40 ns | 47 ns | 22A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 500V | 500V | 312W Tc | TO-247AC | 67A | N-Channel | 1938pF @ 100V | 230m Ω @ 11A, 10V | 5V @ 250μA | 22A Tc | 98nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
| STW24N60M6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M6 | Through Hole | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-247-3 | 16 Weeks | NOT SPECIFIED | STW24N | NOT SPECIFIED | 600V | N-Channel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRFS8407-7P | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | /files/infineontechnologies-auirfs84077p-datasheets-1824.pdf | TO-263-7, D2Pak (6 Leads + Tab) | 10.67mm | 4.83mm | 9.65mm | 10 Weeks | No SVHC | 7 | EAR99 | No | IRFS8407 | 1 | Single | 231W | FET General Purpose Power | 18 ns | 62ns | 51 ns | 78 ns | 240A | 20V | 40V | 3.9V | 231W Tc | N-Channel | 7437pF @ 25V | 2.2 V | 1.3m Ω @ 100A, 10V | 3.9V @ 150μA | 240A Tc | 225nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| SSM3J117TU,LF | Toshiba Semiconductor and Storage | $0.29 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSII | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 3-SMD, Flat Lead | 12 Weeks | 30V | 500mW Ta | P-Channel | 280pF @ 15V | 117m Ω @ 1A, 10V | 2.6V @ 1mA | 2A Ta | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG22N60AE-GE3 | Vishay Siliconix | $3.16 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg22n60aege3-datasheets-1833.pdf | TO-247-3 | 14 Weeks | 600V | 179W Tc | N-Channel | 1451pF @ 100V | 180m Ω @ 11A, 10V | 4V @ 250μA | 20A Tc | 96nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4776DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SkyFET®, TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TA | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-si4776dyt1ge3-datasheets-1618.pdf | 8-SOIC (0.154, 3.90mm Width) | 27 Weeks | 540.001716mg | 8 | 1 | 2.5W | 1 | 8-SO | 10 ns | 11ns | 6 ns | 11 ns | 11.9A | 20V | 30V | 4.1W Tc | 13mOhm | N-Channel | 521pF @ 15V | 16mOhm @ 10A, 10V | 2.3V @ 1mA | 11.9A Tc | 17.5nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIUD403ED-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen III | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-siud403edt1ge3-datasheets-1702.pdf | PowerPAK® 0806 | 3 | 14 Weeks | EAR99 | unknown | YES | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-N3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | 20V | 1.25W Ta | P-Channel | 31pF @ 10V | 1.25 Ω @ 300mA, 4.5V | 900mV @ 250μA | 500mA Ta | 1nC @ 4.5V | 1.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMV120ENEAR | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/nexperiausainc-pmv120enear-datasheets-1705.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 4 Weeks | LOGIC LEVEL COMPATIBLE | AEC-Q101; IEC-60134 | DUAL | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | R-PDSO-G3 | 2.1A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | 513mW Ta 6.4W Tc | TO-236AB | 0.123Ohm | N-Channel | 275pF @ 30V | 123m Ω @ 2.1A, 10V | 2.7V @ 250μA | 2.1A Ta | 7.4nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| RAL025P01TCR | ROHM Semiconductor | $1.03 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-ral025p01tcr-datasheets-1674.pdf | 6-SMD, Flat Leads | Lead Free | 6 | 20 Weeks | yes | EAR99 | DUAL | NOT SPECIFIED | 6 | NOT SPECIFIED | 1 | Other Transistors | R-PDSO-F6 | 2.5A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 12V | 12V | 320mW Ta | 0.062Ohm | P-Channel | 2000pF @ 6V | 62m Ω @ 2.5A, 4.5V | 1V @ 1mA | 2.5A Ta | 16nC @ 4.5V | 1.5V 4.5V | -8V | |||||||||||||||||||||||||||||||||||||||||||||||||
| SSM3K36TU,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 3-SMD, Flat Lead | 12 Weeks | NOT SPECIFIED | NOT SPECIFIED | 20V | 800mW Ta | N-Channel | 46pF @ 10V | 630m Ω @ 200mA, 5V | 1V @ 1mA | 500mA Ta | 1.23nC @ 4V | 1.5V 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RUU002N05T106 | ROHM Semiconductor | $0.32 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | SC-70, SOT-323 | Lead Free | 3 | 12 Weeks | 3 | yes | EAR99 | No | DUAL | GULL WING | 260 | 3 | 10 | 1 | FET General Purpose Power | 4 ns | 6ns | 55 ns | 15 ns | 200mA | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 50V | 50V | 200mW Ta | 0.2A | 2.4Ohm | N-Channel | 25pF @ 10V | 2.2 Ω @ 200mA, 4.5V | 1V @ 1mA | 200mA Ta | 1.2V 4.5V | ±8V |
