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FQA160N08 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FQA160N08
- Package: TO-3P-3, SC-65-3
- Datasheet:
- Stock: 869
- Description: FQA160N08 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 10 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 6 days ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-3P-3, SC-65-3 |
| Number of Pins | 3 |
| Weight | 6.401g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2000 |
| Series | QFET® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 80V |
| Technology | MOSFET (Metal Oxide) |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Current Rating | 160A |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Power Dissipation-Max | 375W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 375W |
| Turn On Delay Time | 85 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 7m Ω @ 80A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 7900pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 160A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 290nC @ 10V |
| Rise Time | 970ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Fall Time (Typ) | 410 ns |
| Turn-Off Delay Time | 260 ns |
| Continuous Drain Current (ID) | 160A |
| Gate to Source Voltage (Vgs) | 25V |
| Drain-source On Resistance-Max | 0.007Ohm |
| Drain to Source Breakdown Voltage | 80V |
| Pulsed Drain Current-Max (IDM) | 640A |
| Height | 18.9mm |
| Length | 15.8mm |
| Width | 5mm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
FQA160N08 Description
A patented planar stripe and DMOS technology are used to create the FQA160N08 N-Channel enhancement mode power MOSFET. This advanced MOSFET technology has been specifically tailored to lower on-state resistance, improve switching performance, and increase avalanche energy strength. Switched-mode power supply, audio amplifiers, DC motor control, and variable switching power applications are all possible with these devices.
FQA160N08 Features
160A, 80V
Low Crss ( Typ. 530pF)
100% avalanche tested
Low gate charge ( Typ. 220nC)
175°C maximum junction temperature rating
RDS(on) = 7mΩ(Max.) @VGS = 10 V, ID = 80A
FQA160N08 Applications
Desktop PC
Workstation
Audio Amplifiers
DC Mode Control
Server & Mainframe
Switched Mode Power Supplies
Variable Switching Power Applications
AC-DC Merchant Power Supply - Desktop PC
AC-DC Merchant Power Supply - Servers & Workstations
