STF40N60M2

STF40N60M2 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi


  • Manufacturer: STMicroelectronics
  • NO: 761-STF40N60M2
  • Package: TO-220-3 Full Pack
  • Datasheet: pdf
  • Stock: 2106
  • Description: STF40N60M2 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Weight 329.988449mg
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series MDmesh™ II Plus
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Base Part Number STF40N
Number of Channels 1
Power Dissipation-Max 40W Tc
Element Configuration Single
Turn On Delay Time 20.5 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 88m Ω @ 17A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2500pF @ 100V
Current - Continuous Drain (Id) @ 25°C 34A Tc
Gate Charge (Qg) (Max) @ Vgs 57nC @ 10V
Rise Time 13.5ns
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Fall Time (Typ) 11 ns
Turn-Off Delay Time 96 ns
Continuous Drain Current (ID) 34A
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage 650V
Radiation Hardening No
RoHS Status ROHS3 Compliant

STF40N60M2 Description

These devices are N-channel Power MOSFETs developed using MDmesh? M2 technology.

Thanks to their strip layout and an improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering

them suitable for the most demanding high-efficiency converters.



STF40N60M2 Features

Extremely low gate charge

Excellent output capacitance (Coss) profile

100% avalanche tested

Zener-protected



STF40N60M2 Applications

Switching applications

LLC converters, resonant converters


In Stock

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