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FQA44N30 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FQA44N30
- Package: TO-3P-3, SC-65-3
- Datasheet:
- Stock: 8597
- Description: FQA44N30 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 4 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 week ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-3P-3, SC-65-3 |
| Number of Pins | 3 |
| Weight | 6.401g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2013 |
| Series | QFET® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| HTS Code | 8541.29.00.95 |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 300V |
| Technology | MOSFET (Metal Oxide) |
| Current Rating | 43.5A |
| Number of Elements | 1 |
| Power Dissipation-Max | 310W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 310W |
| Turn On Delay Time | 85 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 69m Ω @ 21.75A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 5600pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 43.5A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 150nC @ 10V |
| Rise Time | 470ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Fall Time (Typ) | 230 ns |
| Turn-Off Delay Time | 240 ns |
| Continuous Drain Current (ID) | 43.5A |
| Gate to Source Voltage (Vgs) | 30V |
| Drain-source On Resistance-Max | 0.069Ohm |
| Drain to Source Breakdown Voltage | 300V |
| Pulsed Drain Current-Max (IDM) | 174A |
| Avalanche Energy Rating (Eas) | 1700 mJ |
| Height | 20.1mm |
| Length | 15.8mm |
| Width | 5mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
FQA44N30 MOSFET is designed for various applications, including switched-mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. ON Semiconductor FQA44N30 MOSFET is ideally suitable for reducing on-state resistance and providing superior switching performance as well as high avalanche energy strength. FQA44N30 N-Channel Power MOSFET is ideally suitable for high-voltage applications where current is not an important factor. For example, it can be used as a primary side switch for a DC-DC converter that runs off the mains.
FQA44N30 Features
Low Gate Charge ( Typ. 120nC)
Low Crss ( Typ. 75pF)
100% Avalanche Tested
43.5A, 300V
RDS(on) = 69mΩ(Max.) @VGS = 10 V, ID = 21.75A
FQA44N30 Applications
Uninterruptible Power Supply
Switched Mode Power Supplies
Active Power Factor Correction (PFC)
Electronic Lamp Ballasts
