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FQA24N60 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FQA24N60
- Package: TO-3P-3, SC-65-3
- Datasheet:
- Stock: 9374
- Description: FQA24N60 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 9 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 6 days ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-3P-3, SC-65-3 |
| Number of Pins | 3 |
| Weight | 6.401g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2000 |
| Series | QFET® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 600V |
| Technology | MOSFET (Metal Oxide) |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Current Rating | 23.5A |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Power Dissipation-Max | 310W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 310W |
| Turn On Delay Time | 90 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 240m Ω @ 11.8A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 5500pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 23.5A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 145nC @ 10V |
| Rise Time | 270ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Fall Time (Typ) | 170 ns |
| Turn-Off Delay Time | 200 ns |
| Continuous Drain Current (ID) | 23.5A |
| Threshold Voltage | 5V |
| Gate to Source Voltage (Vgs) | 30V |
| Drain-source On Resistance-Max | 0.24Ohm |
| Drain to Source Breakdown Voltage | 600V |
| Pulsed Drain Current-Max (IDM) | 94A |
| Height | 18.9mm |
| Length | 15.8mm |
| Width | 5mm |
| REACH SVHC | No SVHC |
FQA24N60 Description
The FQA24N60 N-Channel enhancement mode power MOSFET is produced using proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
FQA24N60 Features
Low Gate Charge (Typ. 110 nC)
Low Crss (Typ. 56 pF)
100% Avalanche Tested
ROHS3 Compliant
Lead Free
No SVHC
FQA24N60 Applications
Switching Application
New Energy Vehicle
Photovoltaic Generation
Wind Power Generation
Smart Grid
