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STW21NM60ND datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi
- Manufacturer: STMicroelectronics
- NO: 761-STW21NM60ND
- Package: TO-247-3
- Datasheet:
- Stock: 1025
- Description: STW21NM60ND datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 42 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tube |
| Series | FDmesh™ II |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Resistance | 220mOhm |
| Terminal Finish | Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Base Part Number | STW21N |
| Pin Count | 3 |
| Number of Elements | 1 |
| Power Dissipation-Max | 140W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 140W |
| Turn On Delay Time | 18 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 220m Ω @ 8.5A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1800pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C | 17A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 60nC @ 10V |
| Rise Time | 16ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Fall Time (Typ) | 48 ns |
| Turn-Off Delay Time | 70 ns |
| Continuous Drain Current (ID) | 17A |
| Threshold Voltage | 4V |
| Gate to Source Voltage (Vgs) | 25V |
| Drain to Source Breakdown Voltage | 600V |
| Pulsed Drain Current-Max (IDM) | 68A |
| Height | 20.15mm |
| Length | 15.75mm |
| Width | 5.15mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
Description
The STW21NM60ND is an N-channel 600 V, 0.17 ? typ., 17 A FDmesh? II Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247 packages. The second generation of MDmeshTM technology is used to create these FDmeshTM II Power MOSFETs with intrinsic fast-recovery body diodes. These ground-breaking devices have an incredibly low on-resistance and excellent switching performance thanks to a new strip-layout vertical structure. They are perfect for ZVS phase-shift converters and bridge topologies.
Features
Low input capacitance and gate charge
Low gate input resistance
Extremely high dv/dt and avalanche capabilities
Intrinsic fast-recovery body diode
Worldwide best RDS(on)*area amongst the fast recovery diode devices
100% avalanche tested
Applications
Switching Applications
Uninterruptible Power Supplies (UPS)
Small Motor Control
Switch Mode Power Supplies (SMPS)
Power-Over-Ethernet (PoE)
