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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Lead Length | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Voltage | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| STP10N60M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II Plus | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp10n60m2-datasheets-8952.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | 16 Weeks | 600mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | STP10 | 1 | Single | 1 | 8.8 ns | 8ns | 13.2 ns | 32.5 ns | 7.5A | 25V | SILICON | DRAIN | SWITCHING | 85W Tc | TO-220AB | 600V | N-Channel | 400pF @ 100V | 600m Ω @ 3A, 10V | 4V @ 250μA | 7.5A Tc | 13.5nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN5R6-100BS,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/nexperiausainc-psmn5r6100bs118-datasheets-8716.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | 3 | No | e3 | Tin (Sn) | YES | GULL WING | 3 | Single | 306W | 1 | R-PSSO-G2 | 31 ns | 46ns | 34 ns | 83 ns | 100A | 20V | 100V | SILICON | DRAIN | SWITCHING | 306W Tc | 0.0056Ohm | 468 mJ | 100V | N-Channel | 8061pF @ 50V | 5.6m Ω @ 25A, 10V | 4V @ 1mA | 100A Tc | 141nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF1104PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | /files/infineontechnologies-irf1104pbf-datasheets-8981.pdf | 40V | 100A | TO-220-3 | 10.5156mm | 8.77mm | 4.69mm | Lead Free | 3 | 12 Weeks | No SVHC | 9mOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | No | Single | 170W | 1 | FET General Purpose Power | 15 ns | 114ns | 19 ns | 28 ns | 100A | 20V | 40V | SILICON | DRAIN | SWITCHING | 4V | 170W Tc | TO-220AB | 110 ns | 400A | 40V | N-Channel | 2900pF @ 25V | 4 V | 9m Ω @ 60A, 10V | 4V @ 250μA | 100A Tc | 93nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SQD25N15-52_GE3 | Vishay Siliconix | $1.48 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqd25n1552ge3-datasheets-8967.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | 12 Weeks | 1.437803g | Unknown | 3 | Tin | No | 1 | Single | 107W | 1 | TO-252, (D-Pak) | 2.2nF | 11 ns | 11ns | 6 ns | 20 ns | 25A | 20V | 150V | 3V | 107W Tc | 52mOhm | N-Channel | 2200pF @ 25V | 52mOhm @ 15A, 10V | 4V @ 250μA | 25A Tc | 51nC @ 10V | 52 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRF100B202 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/infineontechnologies-irf100b202-datasheets-9002.pdf | TO-220-3 | 12 Weeks | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 97A | 100V | 221W Tc | N-Channel | 4476pF @ 50V | 8.6m Ω @ 58A, 10V | 4V @ 150μA | 97A Tc | 116nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFS7530TRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-irfb7530pbf-datasheets-0453.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 2 | 12 Weeks | 3.949996g | No SVHC | 3 | EAR99 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 1 | Single | 30 | 375W | 1 | FET General Purpose Power | R-PSSO-G2 | 52 ns | 141ns | 104 ns | 172 ns | 195A | 20V | SILICON | DRAIN | SWITCHING | 60V | 60V | 3.7V | 375W Tc | 760A | 0.002Ohm | N-Channel | 13703pF @ 25V | 2m Ω @ 100A, 10V | 3.7V @ 250μA | 195A Tc | 411nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IPP072N10N3GXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipp072n10n3gxksa1-datasheets-9020.pdf | TO-220-3 | 3 | 13 Weeks | yes | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100V | 100V | 150W Tc | TO-220AB | 80A | 320A | 0.0072Ohm | 160 mJ | N-Channel | 4910pF @ 50V | 7.2m Ω @ 80A, 10V | 3.5V @ 90μA | 80A Tc | 68nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SPP04N80C3XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spp04n80c3xksa1-datasheets-8893.pdf | TO-220-3 | 3 | 18 Weeks | yes | AVALANCHE RATED, HIGH VOLTAGE | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 800V | 800V | 63W Tc | TO-220AB | 4A | 12A | 170 mJ | N-Channel | 570pF @ 100V | 1.3 Ω @ 2.5A, 10V | 3.9V @ 240μA | 4A Tc | 31nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB030N08N3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipb030n08n3gatma1-datasheets-8900.pdf | TO-263-7, D2Pak (6 Leads + Tab) | Contains Lead | 6 | 13 Weeks | No SVHC | 7 | no | EAR99 | not_compliant | e3 | Matte Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | 7 | NOT SPECIFIED | 214W | 1 | Not Qualified | R-PSSO-G6 | 23 ns | 79ns | 14 ns | 45 ns | 160A | 20V | 80V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.8V | 214W Tc | 640A | 0.003Ohm | N-Channel | 8110pF @ 40V | 3m Ω @ 100A, 10V | 3.5V @ 155μA | 160A Tc | 117nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| PSMN2R8-40PS,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/nexperiausainc-psmn2r840ps127-datasheets-8906.pdf | TO-220-3 | Lead Free | 3 | 12 Weeks | 3 | EAR99 | No | e3 | Tin (Sn) | NO | 3 | Single | 211W | 1 | 28 ns | 29ns | 23 ns | 52 ns | 100A | 20V | 40V | SILICON | DRAIN | SWITCHING | 211W Tc | TO-220AB | 797A | 0.0028Ohm | 407 mJ | 40V | N-Channel | 4491pF @ 20V | 2.8m Ω @ 10A, 10V | 4V @ 1mA | 100A Tc | 71nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRLZ14SPBF | Vishay Siliconix | $7.11 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irlz14spbf-datasheets-8912.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.41mm | 4.83mm | 9.65mm | Lead Free | 8 Weeks | 1.437803g | 200mOhm | 3 | No | 1 | Single | 3.7W | 1 | D2PAK | 400pF | 9.3 ns | 110ns | 26 ns | 17 ns | 10A | 10V | 60V | 3.7W Ta 43W Tc | 130 ns | 200mOhm | 60V | N-Channel | 400pF @ 25V | 200mOhm @ 6A, 5V | 2V @ 250μA | 10A Tc | 8.4nC @ 5V | 200 mΩ | 4V 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||
| FDP8896 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/onsemiconductor-fdp8896-datasheets-8807.pdf | 30V | 92A | TO-220-3 | 10.67mm | 9.4mm | 4.83mm | Lead Free | 3 | 10 Weeks | 5.9MOhm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | 60A | 8541.29.00.95 | e3 | Tin (Sn) | 30V | Single | 80W | 1 | FET General Purpose Power | 9 ns | 103ns | 44 ns | 56 ns | 92A | 20V | SILICON | DRAIN | SWITCHING | 80W Tc | TO-220AB | 74 mJ | 30V | N-Channel | 2525pF @ 15V | 5.9m Ω @ 35A, 10V | 2.5V @ 250μA | 16A Ta 92A Tc | 67nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SPA04N80C3XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spa04n80c3xksa1-datasheets-8821.pdf | TO-220-3 Full Pack | 3 | 18 Weeks | yes | AVALANCHE RATED, HIGH VOLTAGE | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 800V | 800V | 38W Tc | TO-220AB | 4A | 12A | 170 mJ | N-Channel | 570pF @ 100V | 1.3 Ω @ 2.5A, 10V | 3.9V @ 240μA | 4A Tc | 31nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| STF5N80K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stf5n80k5-datasheets-8828.pdf | TO-220-3 Full Pack | 17 Weeks | ACTIVE (Last Updated: 7 months ago) | STF5N | 800V | 20W Tc | N-Channel | 177pF @ 100V | 1.75 Ω @ 2A, 10V | 5V @ 100μA | 4A Ta | 5nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF9Z10PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irf9z10pbf-datasheets-8836.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 11 Weeks | 6.000006g | Unknown | 3 | No | 1 | Single | 43W | 1 | TO-220AB | 270pF | 11 ns | 63ns | 31 ns | 10 ns | 6.7A | 20V | 60V | -4V | 43W Tc | 500mOhm | P-Channel | 270pF @ 25V | 500mOhm @ 4A, 10V | 4V @ 250μA | 6.7A Tc | 12nC @ 10V | 500 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| FQP4N80 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/onsemiconductor-fqp4n80-datasheets-8850.pdf | 800V | 3.9A | TO-220-3 | 10.1mm | 9.4mm | 4.7mm | Lead Free | 3 | 4 Weeks | 1.8g | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 130W | 1 | FET General Purpose Power | Not Qualified | 16 ns | 45ns | 35 ns | 35 ns | 3.9A | 30V | SILICON | SWITCHING | 130W Tc | TO-220AB | 460 mJ | 800V | N-Channel | 880pF @ 25V | 3.6 Ω @ 1.95A, 10V | 5V @ 250μA | 3.9A Tc | 25nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| IRFU7440PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irfr7440trpbf-datasheets-6297.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 6.22mm | 2.39mm | Lead Free | 3 | 12 Weeks | No SVHC | 2.4MOhm | 3 | EAR99 | No | Single | 140W | 1 | FET General Purpose Power | 11 ns | 39ns | 34 ns | 51 ns | 90A | 20V | SILICON | DRAIN | SWITCHING | 3V | 140W Tc | 760A | 40V | N-Channel | 4610pF @ 25V | 3 V | 2.4m Ω @ 90A, 10V | 3.9V @ 100μA | 90A Tc | 134nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| FDPF55N06 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fdp55n06-datasheets-8740.pdf | TO-220-3 Full Pack | 10.36mm | 16.07mm | 4.9mm | 3 | 5 Weeks | 2.27g | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | AVALANCHE RATED | No | e3 | Tin (Sn) | Single | 48W | 1 | FET General Purpose Power | 30 ns | 130ns | 95 ns | 70 ns | 55A | 25V | SILICON | ISOLATED | SWITCHING | 48W Tc | TO-220AB | 220A | 0.022Ohm | 480 mJ | 60V | N-Channel | 1510pF @ 25V | 22m Ω @ 27.5A, 10V | 4V @ 250μA | 55A Tc | 37nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||
| IRF720SPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irf720spbf-datasheets-8875.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 8 Weeks | 1.437803g | 3 | No | 1 | Single | D2PAK | 410pF | 10 ns | 14ns | 13 ns | 30 ns | 3.3A | 20V | 400V | 3.1W Ta 50W Tc | 1.8Ohm | 400V | N-Channel | 410pF @ 25V | 1.8Ohm @ 2A, 10V | 4V @ 250μA | 3.3A Tc | 20nC @ 10V | 1.8 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB035N08N3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipb035n08n3gatma1-datasheets-8879.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 13 Weeks | no | EAR99 | No | e3 | Matte Tin (Sn) | Halogen Free | SINGLE | GULL WING | 4 | 214W | 1 | FET General Purpose Power | R-PSSO-G2 | 23 ns | 79ns | 14 ns | 45 ns | 100A | 20V | 80V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 214W Tc | 400A | 0.0035Ohm | N-Channel | 8110pF @ 40V | 3.5m Ω @ 100A, 10V | 3.5V @ 155μA | 100A Tc | 117nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| STP5NK50ZFP | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp5nk50zfp-datasheets-8885.pdf | TO-220-3 Full Pack | 2.54mm | 6.35mm | 6.35mm | 3 | 4.535924g | No SVHC | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | Tin | No | e3 | STP5N | 3 | Single | 25W | 1 | FET General Purpose Power | 15 ns | 10ns | 15 ns | 32 ns | 4.4A | 30V | SILICON | ISOLATED | SWITCHING | 3.75V | 70W Tc | TO-220AB | 500V | N-Channel | 535pF @ 25V | 1.5 Ω @ 2.2A, 10V | 4.5V @ 50μA | 4.4A Tc | 28nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
| PSMN4R6-60PS,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/nexperiausainc-psmn4r660ps127-datasheets-8766.pdf | TO-220-3 | 3 | 12 Weeks | 3 | No | e3 | Tin (Sn) | NO | 3 | Single | 211W | 1 | 26 ns | 24ns | 22 ns | 58 ns | 100A | 20V | 60V | SILICON | DRAIN | SWITCHING | 211W Tc | TO-220AB | 565A | 0.0046Ohm | 60V | N-Channel | 4426pF @ 30V | 4.6m Ω @ 25A, 10V | 4V @ 1mA | 100A Tc | 70.8nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SUD70090E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | ThunderFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-sud70090ege3-datasheets-8773.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 14 Weeks | EAR99 | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 50A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 125W Tc | 120A | 0.0089Ohm | 80 mJ | N-Channel | 1950pF @ 50V | 8.9m Ω @ 20A, 10V | 4V @ 250μA | 50A Tc | 50nC @ 10V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDP8447L | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-fdp8447l-datasheets-8782.pdf | TO-220-3 | Lead Free | 3 | 9 Weeks | 1.8g | 8.7MOhm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | Tin | No | e3 | Single | 2W | 1 | FET General Purpose Power | 9 ns | 7ns | 4 ns | 28 ns | 12A | 20V | SILICON | SWITCHING | 2W Ta 60W Tc | TO-220AB | 50A | 40V | N-Channel | 2500pF @ 20V | 8.7m Ω @ 14A, 10V | 3V @ 250μA | 12A Ta 50A Tc | 49nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IPB180N04S401ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-ipb180n04s401atma1-datasheets-8775.pdf | TO-263-7, D2Pak (6 Leads + Tab) | Contains Lead | 6 | 16 Weeks | 7 | EAR99 | ULTRA-LOW RESISTANCE | not_compliant | e3 | Tin (Sn) | AEC-Q101 | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G6 | 35 ns | 24ns | 41 ns | 38 ns | 180A | 20V | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 188W Tc | 0.0013Ohm | 550 mJ | N-Channel | 14000pF @ 25V | 1.3m Ω @ 100A, 10V | 4V @ 140μA | 180A Tc | 176nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRFU9310PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfr9310pbf-datasheets-8583.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 6.22mm | 2.38mm | Lead Free | 8 Weeks | 329.988449mg | Unknown | 7Ohm | 3 | 9.65mm | 1 | Single | 50W | 1 | TO-251AA | 270pF | 11 ns | 10ns | 24 ns | 25 ns | 1.8A | 20V | 400V | -4V | 50W Tc | 7Ohm | -400V | P-Channel | 270pF @ 25V | -4 V | 7Ohm @ 1.1A, 10V | 4V @ 250μA | 1.8A Tc | 13nC @ 10V | 7 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| SI7370DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si7370dpt1ge3-datasheets-8633.pdf | PowerPAK® SO-8 | Lead Free | 5 | 14 Weeks | 506.605978mg | No SVHC | 8 | yes | EAR99 | Tin | No | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 1 | FET General Purpose Powers | R-XDSO-C5 | 16 ns | 12ns | 30 ns | 50 ns | 9.6A | 20V | SILICON | DRAIN | SWITCHING | 4V | 1.9W Ta | 50A | 60V | N-Channel | 11m Ω @ 12A, 10V | 4V @ 250μA | 9.6A Ta | 57nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRFU9014PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-irfr9014trpbf-datasheets-0184.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 6.22mm | 2.39mm | Lead Free | 3 | 8 Weeks | 329.988449mg | Unknown | 500mOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | 9.65mm | e3 | Matte Tin (Sn) | 260 | 3 | 1 | Single | 40 | 2.5W | 1 | Other Transistors | 11 ns | 63ns | 31 ns | 9.6 ns | 5.1A | 20V | SILICON | DRAIN | SWITCHING | 60V | -4V | 2.5W Ta 25W Tc | 20A | -60V | P-Channel | 270pF @ 25V | -4 V | 500m Ω @ 3.1A, 10V | 4V @ 250μA | 5.1A Tc | 12nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IRFD020PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-irfd020pbf-datasheets-8701.pdf | 4-DIP (0.300, 7.62mm) | Lead Free | 3 | 8 Weeks | Unknown | 100mOhm | 4 | EAR99 | No | DUAL | 3 | Single | 1.3W | 1 | FET General Purpose Power | R-PDIP-T3 | 8.7 ns | 55ns | 26 ns | 16 ns | 2.4A | 20V | SILICON | SWITCHING | 50V | 4V | 1W Tc | 60V | N-Channel | 400pF @ 25V | 100m Ω @ 1.4A, 10V | 4V @ 250μA | 2.4A Tc | 24nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| SI7884BDP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si7884bdpt1ge3-datasheets-8917.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 7.5mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 4.6W | 1 | FET General Purpose Power | R-XDSO-C5 | 30 ns | 14ns | 11 ns | 38 ns | 18.5A | 20V | SILICON | DRAIN | SWITCHING | 4.6W Ta 46W Tc | 50A | 54 mJ | 40V | N-Channel | 3540pF @ 20V | 1 V | 7.5m Ω @ 16A, 10V | 3V @ 250μA | 58A Tc | 77nC @ 10V | 4.5V 10V | ±20V |
