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MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 52mOhm @ 15A, 10V ±20V 2200pF @ 25V 51nC @ 10V 150V TO-252-3, DPak (2 Leads + Tab), SC-63
- Manufacturer: Vishay Siliconix
- NO: 880-SQD25N15-52_GE3
- Package: TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet:
- Stock: 9026
- Description: MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 52mOhm @ 15A, 10V ±20V 2200pF @ 25V 51nC @ 10V 150V TO-252-3, DPak (2 Leads + Tab), SC-63 (Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Number of Pins | 3 |
| Supplier Device Package | TO-252, (D-Pak) |
| Weight | 1.437803g |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | Automotive, AEC-Q101, TrenchFET® |
| Published | 2015 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Technology | MOSFET (Metal Oxide) |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 107W Tc |
| Element Configuration | Single |
| Power Dissipation | 107W |
| Turn On Delay Time | 11 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 52mOhm @ 15A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2200pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 25A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 51nC @ 10V |
| Rise Time | 11ns |
| Drain to Source Voltage (Vdss) | 150V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 6 ns |
| Turn-Off Delay Time | 20 ns |
| Continuous Drain Current (ID) | 25A |
| Threshold Voltage | 3V |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.2nF |
| Drain to Source Resistance | 52mOhm |
| Rds On Max | 52 mΩ |
| Height | 2.39mm |
| Length | 6.73mm |
| Width | 6.22mm |
| REACH SVHC | Unknown |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
