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ContactPSMN4R6-60PS,127
PSMN4R6-60PS,127 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Nexperia USA Inc. stock available at Feilidi
- Manufacturer: Nexperia USA Inc.
- NO: 554-PSMN4R6-60PS,127
- Package: TO-220-3
- Datasheet:
- Stock: 4639
- Description: PSMN4R6-60PS,127 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Nexperia USA Inc. stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Surface Mount | NO |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2012 |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Terminal Finish | Tin (Sn) |
| Technology | MOSFET (Metal Oxide) |
| Pin Count | 3 |
| Number of Elements | 1 |
| Power Dissipation-Max | 211W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 211W |
| Case Connection | DRAIN |
| Turn On Delay Time | 26 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 4.6m Ω @ 25A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 4426pF @ 30V |
| Current - Continuous Drain (Id) @ 25°C | 100A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 70.8nC @ 10V |
| Rise Time | 24ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 22 ns |
| Turn-Off Delay Time | 58 ns |
| Continuous Drain Current (ID) | 100A |
| JEDEC-95 Code | TO-220AB |
| Gate to Source Voltage (Vgs) | 20V |
| Max Dual Supply Voltage | 60V |
| Drain-source On Resistance-Max | 0.0046Ohm |
| Drain to Source Breakdown Voltage | 60V |
| Pulsed Drain Current-Max (IDM) | 565A |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
PSMN4R6-60PS,127 Overview
The maximum input capacitance of this device is 4426pF @ 30V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.This device has a continuous drain current (ID) of [100A], which is its maximum continuous current.Drain-source breakdown voltage is?the VDS at which a specified value of ID flows, with VGS=60V.?And this device has 60V drain to source breakdown voltage.As a result of its turn-off delay time, which is 58 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Pulsed drain current is maximum rated peak drain current 565A.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 26 ns.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.In addition to 60V, it supports dual voltages up to the maximum.Its overall power consumption can be reduced by using drive voltage (10V).
PSMN4R6-60PS,127 Features
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 58 ns
based on its rated peak drain current 565A.
PSMN4R6-60PS,127 Applications
There are a lot of Nexperia USA Inc. PSMN4R6-60PS,127 applications of single MOSFETs transistors.
- Telecom 1 Sever Power Supplies
- Server power supplies
- Micro Solar Inverter
- LCD/LED TV
- DC/DC converters
- Lighting, Server, Telecom and UPS.
- LCD/LED/ PDP TV Lighting
- Motor drives and Uninterruptible Power Supplies
- Industrial Power Supplies
- General Purpose Interfacing Switch
