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PSMN2R8-40PS,127 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Nexperia USA Inc. stock available at Feilidi
- Manufacturer: Nexperia USA Inc.
- NO: 554-PSMN2R8-40PS,127
- Package: TO-220-3
- Datasheet:
- Stock: 6604
- Description: PSMN2R8-40PS,127 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Nexperia USA Inc. stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Surface Mount | NO |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2013 |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Technology | MOSFET (Metal Oxide) |
| Pin Count | 3 |
| Number of Elements | 1 |
| Power Dissipation-Max | 211W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 211W |
| Case Connection | DRAIN |
| Turn On Delay Time | 28 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 2.8m Ω @ 10A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 4491pF @ 20V |
| Current - Continuous Drain (Id) @ 25°C | 100A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 71nC @ 10V |
| Rise Time | 29ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 23 ns |
| Turn-Off Delay Time | 52 ns |
| Continuous Drain Current (ID) | 100A |
| JEDEC-95 Code | TO-220AB |
| Gate to Source Voltage (Vgs) | 20V |
| Max Dual Supply Voltage | 40V |
| Drain-source On Resistance-Max | 0.0028Ohm |
| Drain to Source Breakdown Voltage | 40V |
| Pulsed Drain Current-Max (IDM) | 797A |
| Avalanche Energy Rating (Eas) | 407 mJ |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
PSMN2R8-40PS,127 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 407 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 4491pF @ 20V.The drain current is?the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 100A. With a drain-source breakdown voltage of 40V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 40V.It is [52 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Peak drain current is 797A, which is the maximum pulsed drain current.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 28 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.By using 40V, it can supply the maximum voltage from two sources.This device uses no drive voltage (10V) to reduce its overall power consumption.
PSMN2R8-40PS,127 Features
the avalanche energy rating (Eas) is 407 mJ
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 52 ns
based on its rated peak drain current 797A.
PSMN2R8-40PS,127 Applications
There are a lot of Nexperia USA Inc. PSMN2R8-40PS,127 applications of single MOSFETs transistors.
- Power Tools
- Motor drives and Uninterruptible Power Supplies
- DC-to-DC converters
- Battery Protection Circuit
- Micro Solar Inverter
- LCD/LED/ PDP TV Lighting
- General Purpose Interfacing Switch
- Motor control
- Consumer Appliances
- Telecom 1 Sever Power Supplies
