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MOSFET (Metal Oxide) N-Channel Tube 200mOhm @ 6A, 5V ±10V 400pF @ 25V 8.4nC @ 5V 60V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Manufacturer: Vishay Siliconix
- NO: 880-IRLZ14SPBF
- Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet:
- Stock: 11175
- Description: MOSFET (Metal Oxide) N-Channel Tube 200mOhm @ 6A, 5V ±10V 400pF @ 25V 8.4nC @ 5V 60V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB (Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 8 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Number of Pins | 3 |
| Supplier Device Package | D2PAK |
| Weight | 1.437803g |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2014 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Resistance | 200mOhm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Technology | MOSFET (Metal Oxide) |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 3.7W Ta 43W Tc |
| Element Configuration | Single |
| Power Dissipation | 3.7W |
| Turn On Delay Time | 9.3 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 6A, 5V |
| Vgs(th) (Max) @ Id | 2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 400pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 10A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 8.4nC @ 5V |
| Rise Time | 110ns |
| Drain to Source Voltage (Vdss) | 60V |
| Drive Voltage (Max Rds On,Min Rds On) | 4V 5V |
| Vgs (Max) | ±10V |
| Fall Time (Typ) | 26 ns |
| Turn-Off Delay Time | 17 ns |
| Continuous Drain Current (ID) | 10A |
| Gate to Source Voltage (Vgs) | 10V |
| Drain to Source Breakdown Voltage | 60V |
| Input Capacitance | 400pF |
| Recovery Time | 130 ns |
| Drain to Source Resistance | 200mOhm |
| Rds On Max | 200 mΩ |
| Height | 4.83mm |
| Length | 10.41mm |
| Width | 9.65mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
