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ContactMOSFETs Transistors Arrays(4365)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max |
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| SI4276DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4276dyt1ge3-datasheets-1867.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 8 | EAR99 | No | e3 | PURE MATTE TIN | 2.8W | GULL WING | 260 | SI4276 | 8 | Dual | 30 | 2.8W | 2 | 8A | 20V | SILICON | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 3.6W 2.8W | 8A | 0.0153Ohm | 30V | 2 N-Channel (Dual) | 1000pF @ 15V | 15.3m Ω @ 9.5A, 10V | 2.5V @ 250μA | 26nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||
| SI1988DH-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si1988dht1e3-datasheets-4376.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 6 | yes | EAR99 | No | e3 | PURE MATTE TIN | 1.25W | GULL WING | 260 | SI1988 | 6 | 30 | 2 | 8 ns | 20ns | 10 ns | 15 ns | 1.3A | 8V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 2 N-Channel (Dual) | 110pF @ 10V | 168m Ω @ 1.4A, 4.5V | 1V @ 250μA | 4.1nC @ 8V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||
| SI3588DV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si3588dvt1e3-datasheets-4374.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | Unknown | 6 | yes | EAR99 | No | e3 | PURE MATTE TIN | 830mW | GULL WING | 260 | SI3588 | 6 | Dual | 30 | 830mW | 2 | Other Transistors | 2.5A | 8V | SILICON | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 450mV | 830mW 83mW | 0.08Ohm | 20V | N and P-Channel | 450 mV | 80m Ω @ 3A, 4.5V | 450mV @ 250μA (Min) | 2.5A 570mA | 7.5nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||
| 2N7002DW-13-G | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4500BDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si4500bdyt1e3-datasheets-4459.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 8 | 186.993455mg | No SVHC | 8 | yes | EAR99 | unknown | e3 | Matte Tin (Sn) | 1.3W | DUAL | GULL WING | 260 | SI4500 | 8 | 2 | 40 | 1.3W | 2 | Other Transistors | Not Qualified | 20 ns | 35ns | 35 ns | 55 ns | 9.1A | 12V | N-CHANNEL AND P-CHANNEL | 20V | METAL-OXIDE SEMICONDUCTOR | 1.5V | 6.6A | N and P-Channel, Common Drain | 20m Ω @ 9.1A, 4.5V | 1.5V @ 250μA | 6.6A 3.8A | 17nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||
| SI3850ADV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-si3850advt1e3-datasheets-4389.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | Unknown | 6 | yes | EAR99 | No | e3 | PURE MATTE TIN | 1.08W | GULL WING | 260 | SI3850 | 6 | Dual | 30 | 1.06W | 2 | Other Transistors | 1.4A | 12V | SILICON | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 1.5V | 0.41Ohm | 20V | N and P-Channel, Common Drain | 300m Ω @ 500mA, 4.5V | 1.5V @ 250μA | 1.4A 960mA | 1.4nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||
| SI1551DL-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si1551dlt1e3-datasheets-4304.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 6 | yes | EAR99 | No | e3 | PURE MATTE TIN | 270mW | GULL WING | 260 | SI1551 | 6 | Dual | 30 | 300mW | 2 | Other Transistors | 410mA | 12V | SILICON | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 0.29A | 20V | N and P-Channel | 1.9 Ω @ 290mA, 4.5V | 1.5V @ 250μA | 290mA 410mA | 1.5nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||
| SI3586DV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si3586dvt1e3-datasheets-4402.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | Unknown | 6 | yes | EAR99 | No | PURE MATTE TIN (SN) | 830mW | GULL WING | 260 | SI3586 | 6 | Dual | 30 | 830mW | 2 | Other Transistors | 2.5A | 8V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 1.1V | 20V | N and P-Channel | 1.1 V | 60m Ω @ 3.4A, 4.5V | 1.1V @ 250μA | 2.9A 2.1A | 6nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||
| 64-2013PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 3 | EAR99 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | NO | SINGLE | THROUGH-HOLE | NOT SPECIFIED | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE | DRAIN | P-CHANNEL | 200V | METAL-OXIDE SEMICONDUCTOR | 9A | 36A | 0.7Ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4501ADY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4501adyt1e3-datasheets-4443.pdf | 8-SOIC (0.154, 3.90mm Width) | Unknown | 8 | 1.3W | SI4501 | 1.3W | 8-SO | 4.1A | 8V | 30V 8V | 800mV | 1.3W | 42mOhm | 8V | N and P-Channel, Common Drain | 18mOhm @ 8.8A, 10V | 1.8V @ 250μA | 6.3A 4.1A | 20nC @ 5V | Logic Level Gate | 18 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4511DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si4511dyt1e3-datasheets-4473.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 186.993455mg | Unknown | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | 1.1W | DUAL | GULL WING | 260 | SI4511 | 8 | 2 | 30 | 2W | 2 | Other Transistors | 9.6A | 12V | SWITCHING | N-CHANNEL AND P-CHANNEL | 20V | METAL-OXIDE SEMICONDUCTOR | 600mV | 0.0145Ohm | N and P-Channel | 14.5m Ω @ 9.6A, 10V | 1.8V @ 250μA | 7.2A 4.6A | 18nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||
| IRF5810TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 2 (1 Year) | SMD/SMT | 150°C | -55°C | RoHS Compliant | 2003 | /files/infineontechnologies-irf5810trpbf-datasheets-1714.pdf | SOT-23-6 Thin, TSOT-23-6 | 3mm | 990.6μm | 1.4986mm | Lead Free | No SVHC | 90MOhm | 6 | No | 960mW | IRF5810PBF | Dual | 960mW | 2 | 6-TSOP | 650pF | 8.2 ns | 14ns | 53 ns | 62 ns | -2.9A | 12V | -20V | 20V | -1.2V | 960mW | 90mOhm | -20V | 2 P-Channel (Dual) | 650pF @ 16V | -1.2 V | 90mOhm @ 2.9A, 4.5V | 1.2V @ 250μA | 2.9A | 9.6nC @ 4.5V | Logic Level Gate | 90 mΩ | |||||||||||||||||||||||||||||||||||
| IRF5851TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 2 (1 Year) | SMD/SMT | 150°C | -55°C | RoHS Compliant | 2010 | SOT-23-6 Thin, TSOT-23-6 | 3mm | 900μm | 1.5mm | Lead Free | No SVHC | 90mOhm | 6 | No | 960mW | IRF5851PBF | 960mW | 6-TSOP | 400pF | 2.7A | 12V | 20V | 20V | 1.25V | 960mW | 90mOhm | 20V | N and P-Channel | 400pF @ 15V | 1.25 V | 90mOhm @ 2.7A, 4.5V | 1.25V @ 250μA | 2.7A 2.2A | 6nC @ 4.5V | Logic Level Gate | 90 mΩ | ||||||||||||||||||||||||||||||||||||||||||
| AON3814L | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 8-SMD, Flat Lead | compliant | 20V | 2.5W | 2 N-Channel (Dual) Common Drain | 1100pF @ 10V | 17m Ω @ 6A, 4.5V | 1.1V @ 250μA | 6A Tc | 13nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ALD111933MAL | Advanced Linear Devices Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | EPAD® | Surface Mount | Surface Mount | 0°C~70°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/advancedlineardevicesinc-ald111933sal-datasheets-6940.pdf | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 8 | 10 Weeks | yes | EAR99 | unknown | 500mW | GULL WING | Dual | 500mW | 2 | R-PDSO-G8 | 10 ns | 6.9mA | 10.6V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 10V | 2 N-Channel (Dual) Matched Pair | 2.5pF @ 5V | 500 Ω @ 5.9V | 3.35V @ 1μA | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1539DL-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si1539dlt1e3-datasheets-4294.pdf | 6-TSSOP, SC-88, SOT-363 | Lead Free | 6 | 7.512624mg | 6 | yes | EAR99 | No | e3 | PURE MATTE TIN | 270mW | DUAL | GULL WING | 260 | SI1539 | 6 | 30 | 270mW | 2 | Other Transistors | 420mA | 20V | SILICON | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 0.54A | 0.48Ohm | 30V | N and P-Channel | 480m Ω @ 590mA, 10V | 2.6V @ 250μA | 540mA 420mA | 1.4nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||
| IRF7755TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 150°C | -55°C | RoHS Compliant | 2009 | /files/infineontechnologies-irf7755trpbf-datasheets-1755.pdf | 8-TSSOP (0.173, 4.40mm Width) | No SVHC | 8 | 1W | IRF7755PBF | Dual | 1W | 2 | 8-TSSOP | 1.09nF | -3.9A | 20V | -20V | 20V | -1.2V | 1W | -20V | 2 P-Channel (Dual) | 1090pF @ 15V | -1.2 V | 51mOhm @ 3.7A, 4.5V | 1.2V @ 250μA | 3.9A | 17nC @ 4.5V | Logic Level Gate | 51 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||
| IRF5852TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 2 (1 Year) | SMD/SMT | 150°C | -55°C | RoHS Compliant | 2010 | SOT-23-6 Thin, TSOT-23-6 | 3mm | 900μm | 1.5mm | Lead Free | No SVHC | 6 | No | 960mW | IRF5852PBF | Dual | 960mW | 2 | 6-TSOP | 400pF | 6.6 ns | 1.2ns | 2.4 ns | 15 ns | 2.7A | 12V | 20V | 20V | 1.25V | 960mW | 90mOhm | 20V | 2 N-Channel (Dual) | 400pF @ 15V | 1.25 V | 90mOhm @ 2.7A, 4.5V | 1.25V @ 250μA | 2.7A | 6nC @ 4.5V | Logic Level Gate | 90 mΩ | |||||||||||||||||||||||||||||||||||||
| IRF7350TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | 2004 | /files/infineontechnologies-irf7350pbf-datasheets-0477.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 2W | IRF7350PBF | 2W | 8-SO | 380pF | 2.1A | 20V | 100V | 2W | 100V | N and P-Channel | 380pF @ 25V | 210mOhm @ 2.1A, 10V | 4V @ 250μA | 2.1A 1.5A | 28nC @ 10V | Standard | 210 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7754TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 150°C | -55°C | RoHS Compliant | 2009 | /files/infineontechnologies-irf7754trpbf-datasheets-1776.pdf | 8-TSSOP (0.173, 4.40mm Width) | Lead Free | No SVHC | 8 | 1W | IRF7754PBF | Dual | 1W | 2 | 8-TSSOP | 1.984nF | -5.5A | 8V | -12V | 12V | -900mV | 1W | -12V | 2 P-Channel (Dual) | 1984pF @ 6V | -900 mV | 25mOhm @ 5.4A, 4.5V | 900mV @ 250μA | 5.5A | 22nC @ 4.5V | Logic Level Gate | 25 mΩ | |||||||||||||||||||||||||||||||||||||||||||||
| BUK9MNN-65PKK,518 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchPLUS | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/nexperia-buk9mnn65pkk518-datasheets-1274.pdf | 20-SOIC (0.295, 7.50mm Width) | 20 | 65V | 3.57W Tc | 2 N-Channel (Dual) | 1180pF @ 25V | 32.8m Ω @ 5A, 10V | 2V @ 1mA | 7.1A Tc | 15nC @ 5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SH8M70TB1 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2010 | /files/rohmsemiconductor-sh8m70tb1-datasheets-1729.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 2W | *M70 | 2W | 2.5A | 250V | N and P-Channel | 180pF @ 25V | 1.63 Ω @ 1.5A, 10V | 4V @ 1mA | 3A 2.5A | 5.2nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1553DL-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/vishaysiliconix-si1553dlt1e3-datasheets-4314.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | No SVHC | 6 | yes | EAR99 | No | e3 | PURE MATTE TIN | 270mW | GULL WING | 260 | SI1553 | 6 | Dual | 30 | 270mW | 2 | Other Transistors | 410mA | 12V | SILICON | N-CHANNEL AND P-CHANNEL | 20V | METAL-OXIDE SEMICONDUCTOR | 600mV | 0.385Ohm | N and P-Channel | 385m Ω @ 660mA, 4.5V | 600mV @ 250μA (Min) | 660mA 410mA | 1.2nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||
| AO4818BL_102 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 8-SOIC (0.154, 3.90mm Width) | 30V | 2W | 2 N-Channel (Dual) | 888pF @ 15V | 19m Ω @ 8A, 10V | 2.4V @ 250μA | 8A Ta | 18nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MCH6605-TL-EX | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Not Applicable | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MP6K31TR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/rohmsemiconductor-mp6k31tr-datasheets-1705.pdf | 6-SMD, Flat Leads | 6 | 6 | yes | EAR99 | e2 | TIN COPPER | 2W | 260 | *K31 | 6 | Dual | 10 | 2W | 2 | FET General Purpose Power | Not Qualified | 2A | SILICON | DRAIN | SWITCHING | 60V | METAL-OXIDE SEMICONDUCTOR | 2A | 8A | 0.35Ohm | 60V | 2 N-Channel (Dual) | 110pF @ 10V | 290m Ω @ 2A, 10V | 2.5V @ 1mA | 2nC @ 5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||
| IRF7752TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | 2009 | /files/infineontechnologies-irf7752trpbf-datasheets-1718.pdf | 8-TSSOP (0.173, 4.40mm Width) | 3.0988mm | 1.0414mm | 4.4958mm | Lead Free | Unknown | 30mOhm | 8 | No | 1W | IRF7752PBF | Dual | 1W | 2 | 8-TSSOP | 861pF | 7.2 ns | 9.1ns | 11 ns | 25 ns | 4.6A | 12V | 30V | 1W | 36mOhm | 30V | 2 N-Channel (Dual) | 861pF @ 25V | 2 V | 30mOhm @ 4.6A, 10V | 2V @ 250μA | 4.6A | 9nC @ 4.5V | Logic Level Gate | 30 mΩ | ||||||||||||||||||||||||||||||||||||||
| ALD1108EPCL | Advanced Linear Devices Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | EPAD® | Through Hole | Through Hole | 0°C~70°C TJ | Tube | 1 (Unlimited) | 70°C | 0°C | ROHS3 Compliant | 2003 | /files/advancedlineardevicesinc-ald1108escl-datasheets-0221.pdf | 16-DIP (0.300, 7.62mm) | 10 Weeks | 16 | 600mW | 500mW | 16-PDIP | 25pF | 12mA | 10.6V | 10V | 600mW | 500Ohm | 10V | 4 N-Channel, Matched Pair | 25pF @ 5V | 500Ohm @ 5V | 1.01V @ 1μA | Standard | 500 Ω | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AO4614BL_DELTA | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 8-SOIC (0.154, 3.90mm Width) | 40V | 2W | N and P-Channel | 650pF @ 20V 1175pF @ 20V | 30m Ω @ 6A, 10V, 45m Ω @ 5A, 10V | 3V @ 250μA | 6A Ta 5A Ta | 10.8nC @ 10V, 22nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF8852TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2009 | /files/infineontechnologies-irf8852trpbf-datasheets-1595.pdf | 8-TSSOP (0.173, 4.40mm Width) | 3.0988mm | 8 | 8 | ULTRA LOW RESISTANCE | No | 1W | GULL WING | IRF8852PBF | Dual | 1W | 2 | 11.4 ns | 10.9ns | 28.9 ns | 70.8 ns | 7.8A | 20V | SILICON | SWITCHING | 25V | METAL-OXIDE SEMICONDUCTOR | MO-153AA | 0.0113Ohm | 25V | 2 N-Channel (Dual) | 1151pF @ 20V | 11.3m Ω @ 7.8A, 10V | 2.35V @ 25μA | 9.5nC @ 4.5V | Logic Level Gate |
