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ContactMOSFETs Transistors Arrays(4365)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max |
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| AO7801 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2007 | /files/alphaomegasemiconductor-ao7801-datasheets-1395.pdf | 6-TSSOP, SC-88, SOT-363 | Lead Free | 6 | 16 Weeks | 6 | 300mW | GULL WING | 300mW | 2 | 600mA | 8V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 0.7Ohm | 2 P-Channel (Dual) | 140pF @ 10V | 520m Ω @ 600mA, 4.5V | 900mV @ 250μA | 1.8nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7911DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si7911dnt1e3-datasheets-4763.pdf | PowerPAK® 1212-8 Dual | Lead Free | 6 | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | 1.3W | C BEND | 260 | SI7911 | 8 | Dual | 30 | 2 | Other Transistors | S-XDSO-C6 | 20 ns | 35ns | 40 ns | 70 ns | 4.2A | 8V | SILICON | DRAIN | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 20A | 0.051Ohm | -20V | 2 P-Channel (Dual) | 51m Ω @ 5.7A, 4.5V | 1V @ 250μA | 15nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||
| SI7222DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/vishaysiliconix-si7222dnt1e3-datasheets-4699.pdf | PowerPAK® 1212-8 Dual | 6 | Unknown | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 2.5W | C BEND | 260 | SI7222 | 8 | Dual | 40 | 2.5W | 2 | FET General Purpose Powers | S-PDSO-C6 | 12ns | 6 ns | 21 ns | 5A | 12V | SILICON | DRAIN | SWITCHING | 40V | 40V | METAL-OXIDE SEMICONDUCTOR | 1.6V | 17.8W | 5.7A | 2 N-Channel (Dual) | 700pF @ 20V | 42m Ω @ 5.7A, 10V | 1.6V @ 250μA | 6A | 29nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||
| SI7946DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si7946dpt1e3-datasheets-4796.pdf | PowerPAK® SO-8 Dual | 6 | 8 | yes | EAR99 | AVALANCHE RATED | No | e3 | PURE MATTE TIN | 1.4W | C BEND | 260 | SI7946 | 8 | Dual | 30 | 1.4W | 2 | FET General Purpose Power | R-XDSO-C6 | 11 ns | 15ns | 20 ns | 30 ns | 2.1A | 20V | SILICON | DRAIN | SWITCHING | 150V | METAL-OXIDE SEMICONDUCTOR | 10A | 0.15Ohm | 4 mJ | 150V | 2 N-Channel (Dual) | 150m Ω @ 3.3A, 10V | 4V @ 250μA | 20nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||
| FDS6898AZ-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fds6898azf085-datasheets-2069.pdf | SOIC | Lead Free | 8 | 230.4mg | 8 | ACTIVE (Last Updated: 1 day ago) | yes | Tin | No | 900mW | GULL WING | Dual | 2W | 2 | FET General Purpose Power | 1.821nF | 10 ns | 15ns | 16 ns | 34 ns | 9.4A | 12V | SWITCHING | N-CHANNEL | 20V | METAL-OXIDE SEMICONDUCTOR | 0.014Ohm | 14 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||
| SIZ702DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siz702dtt1ge3-datasheets-2076.pdf | 6-PowerPair™ | 6mm | 750μm | 3.73mm | 6 | No | 4.5W | SIZ702 | 2 | 2 | 6-PowerPair™ | 790pF | 15 ns | 12ns | 10 ns | 20 ns | 14A | 20V | 30V | 27W 30W | 12mOhm | 2 N-Channel (Half Bridge) | 790pF @ 15V | 12mOhm @ 13.8A, 10V | 2.5V @ 250μA | 16A | 21nC @ 10V | Logic Level Gate | 12 mΩ | |||||||||||||||||||||||||||||||||||||||||||||
| SIA950DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sia950djt1ge3-datasheets-2084.pdf | PowerPAK® SC-70-6 Dual | 6 | 6 | yes | EAR99 | No | e3 | MATTE TIN | 7W | 260 | SIA950 | 6 | Dual | 40 | 1.9W | 2 | FET General Purpose Power | 10 ns | 15ns | 15 ns | 25 ns | 470mA | 16V | SILICON | DRAIN | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 0.47A | 190V | 2 N-Channel (Dual) | 90pF @ 100V | 3.8 Ω @ 360mA, 4.5V | 1.4V @ 250μA | 950mA | 4.5nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||
| SIS902DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/vishaysiliconix-sis902dnt1ge3-datasheets-2091.pdf | PowerPAK® 1212-8 Dual | 6 | 8 | yes | EAR99 | No | 15.4W | C BEND | 260 | SIS902 | 8 | 40 | 3.1W | 2 | S-XDSO-C6 | 17 ns | 18ns | 9 ns | 12 ns | 3A | 20V | SILICON | DRAIN | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 4A | 8A | 75V | 2 N-Channel (Dual) | 175pF @ 38V | 186m Ω @ 3A, 10V | 2.5V @ 250μA | 4A | 6nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||
| FDD8426H | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | /files/onsemiconductor-fdd8426h-datasheets-2097.pdf | TO-252-5, DPak (4 Leads + Tab), TO-252AD | compliant | NOT SPECIFIED | NOT SPECIFIED | 40V | 1.3W | N and P-Channel | 2735pF @ 20V | 12m Ω @ 12A, 10V | 3V @ 250μA | 12A 10A | 53nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1972DH-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si1972dht1e3-datasheets-4344.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.25W | GULL WING | 260 | SI1972 | 6 | 30 | 740mW | 2 | FET General Purpose Power | 1.3A | 20V | SILICON | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 2 N-Channel (Dual) | 75pF @ 15V | 225m Ω @ 1.3A, 10V | 2.8V @ 250μA | 2.8nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||
| SI4992EY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4992eyt1e3-datasheets-4593.pdf | 8-SOIC (0.154, 3.90mm Width) | 540.001716mg | 8 | 1.4W | SI4992 | 2 | Dual | 1.4W | 2 | 8-SO | 4.8A | 20V | 75V | 1.4W | 48mOhm | 75V | 2 N-Channel (Dual) | 1 V | 48mOhm @ 4.8A, 10V | 3V @ 250μA | 3.6A | 21nC @ 10V | Logic Level Gate | 48 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5933CDC-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si5933cdct1ge3-datasheets-1970.pdf | 8-SMD, Flat Lead | Lead Free | 8 | 84.99187mg | No SVHC | 144mOhm | 8 | yes | EAR99 | No | Pure Matte Tin (Sn) | 2.8W | 260 | SI5933 | 8 | Dual | 30 | 1.3W | 2 | Other Transistors | 1 ns | 34ns | 8 ns | 22 ns | 2.5A | 8V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | -1V | 3.7A | 10A | -20V | 2 P-Channel (Dual) | 276pF @ 10V | 144m Ω @ 2.5A, 4.5V | 1V @ 250μA | 3.7A | 6.8nC @ 5V | Standard | ||||||||||||||||||||||||||||||||||
| SI4622DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SkyFET®, TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4622dyt1ge3-datasheets-1933.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 186.993455mg | 8 | yes | EAR99 | No | e3 | MATTE TIN | 3.1W | GULL WING | 260 | SI4622 | 8 | 2 | 30 | 2.2W | 2 | FET General Purpose Power | 11 ns | 8A | 20V | SILICON | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 3.3W 3.1W | 8A | 0.016Ohm | 2 N-Channel (Dual) | 2458pF @ 15V | 16m Ω @ 9.6A, 10V | 2.5V @ 1mA | 60nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||
| APTMC120HRM40CT3AG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | -40°C~150°C TJ | Bulk | RoHS Compliant | 1997 | /files/microsemicorporation-aptmc120hrm40ct3ag-datasheets-1941.pdf | Module | SP3 | 1200V 1.2kV | 375W | 2 N-Channel (Dual) | 2788pF @ 1000V | 34mOhm @ 50A, 20V | 3V @ 12.5mA | 73A Tc | 161nC @ 5V | Silicon Carbide (SiC) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4650DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4650dyt1e3-datasheets-1927.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | 8 | 186.993455mg | 8 | yes | EAR99 | No | e3 | MATTE TIN | 3.1W | DUAL | GULL WING | 260 | SI4650 | 8 | 2 | 30 | 2 | 32 ns | 130ns | 34 ns | 19 ns | 7.8A | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 30A | 30V | 2 N-Channel (Half Bridge) | 1550pF @ 15V | 18m Ω @ 8A, 10V | 3V @ 1mA | 8A | 40nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||
| ECH8674-TL-H | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/rochesterelectronicsllc-ech8674tlh-datasheets-1953.pdf | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4914BDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4914bdyt1ge3-datasheets-1944.pdf | 8-SOIC (0.154, 3.90mm Width) | 27 Weeks | 506.605978mg | 8 | No | 3.1W | SI4914 | 2 | Dual | 2 | 8-SO | 10 ns | 9ns | 8 ns | 16 ns | 8A | 20V | 30V | 2.7W 3.1W | 15.5mOhm | 2 N-Channel (Half Bridge) | 21mOhm @ 8A, 10V | 2.7V @ 250μA | 8.4A 8A | 10.5nC @ 4.5V | Standard | 21 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||
| SI4670DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4670dyt1ge3-datasheets-9495.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 8 | 15 Weeks | 186.993455mg | 8 | EAR99 | No | e3 | PURE MATTE TIN | 2.8W | GULL WING | 260 | SI4670 | 8 | 2 | 30 | 2 | 15 ns | 50ns | 50 ns | 20 ns | 7A | 16V | SILICON | SWITCHING | 25V | METAL-OXIDE SEMICONDUCTOR | 7A | 2 N-Channel (Dual) | 680pF @ 13V | 23m Ω @ 7A, 10V | 2.2V @ 250μA | 8A | 18nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||
| SI4947ADY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4947adyt1e3-datasheets-4547.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 8 | yes | EAR99 | No | PURE MATTE TIN (SN) | 1.2W | GULL WING | 260 | SI4947 | 8 | Dual | 30 | 2W | 2 | Other Transistors | 8 ns | 9ns | 10 ns | 21 ns | -3A | 20V | SILICON | METAL-OXIDE SEMICONDUCTOR | 3A | 30V | 2 P-Channel (Dual) | 80m Ω @ 3.9A, 10V | 1V @ 250μA (Min) | 3A | 8nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||
| SI4906DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4906dyt1e3-datasheets-4512.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | 3.1W | GULL WING | 260 | SI4906 | 8 | Dual | 30 | 2W | 2 | 85ns | 7 ns | 17 ns | 5.3A | 16V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 30A | 0.039Ohm | 40V | 2 N-Channel (Dual) | 625pF @ 20V | 39m Ω @ 5A, 10V | 2.2V @ 250μA | 6.6A | 22nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||
| SI6981DQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si6981dqt1e3-datasheets-4704.pdf | 8-TSSOP (0.173, 4.40mm Width) | Lead Free | 8 | No SVHC | 31mOhm | 8 | EAR99 | No | e3 | Matte Tin (Sn) | 830mW | GULL WING | SI6981 | 8 | Dual | 1.14W | 2 | Other Transistors | 35 ns | 55ns | 52 ns | 120 ns | -4.8A | 8V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | -900mV | MO-153 | 4.1A | 20V | 2 P-Channel (Dual) | 31m Ω @ 4.8A, 4.5V | 900mV @ 300μA | 4.1A | 25nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||
| SI4910DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si4910dyt1e3-datasheets-4516.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | No SVHC | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | 2W | GULL WING | 260 | SI4910 | 8 | Dual | 30 | 2W | 2 | FET General Purpose Powers | 60ns | 5 ns | 22 ns | 6A | 16V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 2V | 3.1W | 65 pF | 40V | 2 N-Channel (Dual) | 855pF @ 20V | 27m Ω @ 6A, 10V | 2V @ 250μA | 7.6A | 32nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||
| SI4913DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si4913dyt1e3-datasheets-4507.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | Unknown | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | 1.1W | GULL WING | 260 | SI4913 | 8 | Dual | 30 | 1.1W | 2 | Other Transistors | 32 ns | 42ns | 160 ns | 350 ns | 9.4A | 8V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | -1V | 7.1A | 0.015Ohm | -20V | 2 P-Channel (Dual) | 15m Ω @ 9.4A, 4.5V | 1V @ 500μA | 7.1A | 65nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||
| SI6544BDQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si6544bdqt1e3-datasheets-4657.pdf | 8-TSSOP (0.173, 4.40mm Width) | 3.0988mm | 1.0414mm | 4.4958mm | Lead Free | 8 | 32mOhm | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | 830mW | GULL WING | 260 | SI6544 | 8 | Dual | 30 | 830mW | 2 | Other Transistors | 14ns | 14 ns | 40 ns | 2.7A | 20V | SILICON | N-CHANNEL AND P-CHANNEL | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 3.7A | N and P-Channel | 43m Ω @ 3.8A, 10V | 3V @ 250μA | 3.7A 3.8A | 15nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||
| 64-2013PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 3 | EAR99 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | NO | SINGLE | THROUGH-HOLE | NOT SPECIFIED | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE | DRAIN | P-CHANNEL | 200V | METAL-OXIDE SEMICONDUCTOR | 9A | 36A | 0.7Ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4501ADY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4501adyt1e3-datasheets-4443.pdf | 8-SOIC (0.154, 3.90mm Width) | Unknown | 8 | 1.3W | SI4501 | 1.3W | 8-SO | 4.1A | 8V | 30V 8V | 800mV | 1.3W | 42mOhm | 8V | N and P-Channel, Common Drain | 18mOhm @ 8.8A, 10V | 1.8V @ 250μA | 6.3A 4.1A | 20nC @ 5V | Logic Level Gate | 18 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4511DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si4511dyt1e3-datasheets-4473.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 186.993455mg | Unknown | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | 1.1W | DUAL | GULL WING | 260 | SI4511 | 8 | 2 | 30 | 2W | 2 | Other Transistors | 9.6A | 12V | SWITCHING | N-CHANNEL AND P-CHANNEL | 20V | METAL-OXIDE SEMICONDUCTOR | 600mV | 0.0145Ohm | N and P-Channel | 14.5m Ω @ 9.6A, 10V | 1.8V @ 250μA | 7.2A 4.6A | 18nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||
| IRF5850TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 2 (1 Year) | 150°C | -55°C | RoHS Compliant | 2005 | /files/infineontechnologies-irf5850trpbf-datasheets-1694.pdf | SOT-23-6 Thin, TSOT-23-6 | 2.9972mm | 1.143mm | 1.75mm | 6 | No | 960mW | IRF5850PBF | Dual | 960mW | 2 | 6-TSOP | 320pF | 8.3 ns | 14ns | 28 ns | 31 ns | -2.2A | 12V | 20V | 960mW | 220mOhm | -20V | 2 P-Channel (Dual) | 320pF @ 15V | 135mOhm @ 2.2A, 4.5V | 1.2V @ 250μA | 2.2A | 5.4nC @ 4.5V | Logic Level Gate | 135 mΩ | |||||||||||||||||||||||||||||||||||||||||||
| SI4830CDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4830cdyt1ge3-datasheets-1925.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.5494mm | 3.9878mm | Lead Free | 8 | 506.605978mg | Unknown | 20MOhm | 8 | EAR99 | Tin | No | e3 | 2.9W | GULL WING | 260 | SI4830 | 8 | Dual | 30 | 2W | 2 | 17 ns | 12ns | 10 ns | 19 ns | 7.5A | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 1V | 30V | 2 N-Channel (Half Bridge) | 950pF @ 15V | 20m Ω @ 8A, 10V | 3V @ 1mA | 8A | 25nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||
| IRF7902TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 1999 | /files/infineontechnologies-irf7902pbf-datasheets-4055.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Lead Free | 8 | 12 Weeks | 22.6MOhm | 8 | EAR99 | No | e3 | Matte Tin (Sn) | 2W | GULL WING | IRF7902PBF | Dual | 2W | 2 | 9.7A | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 1.4W 2W | 7.3 mJ | 30V | 2 N-Channel (Dual) | 580pF @ 15V | 22.6m Ω @ 6.4A, 10V | 2.25V @ 25μA | 6.4A 9.7A | 6.9nC @ 4.5V | Logic Level Gate |
