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ContactMOSFETs Transistors Arrays(4365)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max |
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| SI3981DV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si3981dvt1e3-datasheets-4467.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | Unknown | 6 | EAR99 | No | 800mW | GULL WING | SI3981 | 6 | Dual | 800mW | 2 | Other Transistors | 30 ns | 50ns | 21 ns | 45 ns | -1.9A | 8V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | -1.1V | 0.185Ohm | 20V | 2 P-Channel (Dual) | -1.1 V | 185m Ω @ 1.9A, 4.5V | 1.1V @ 250μA | 1.6A | 5nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||
| SI4539ADY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4539adyt1ge3-datasheets-2229.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | 1.1W | DUAL | GULL WING | 260 | SI4539 | 8 | 30 | 1.1W | 2 | Other Transistors | 10ns | 10 ns | 40 ns | 3.7A | 20V | SILICON | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 4.4A | 0.036Ohm | 30V | N and P-Channel | 36m Ω @ 5.9A, 10V | 1V @ 250μA (Min) | 4.4A 3.7A | 20nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||
| SI4230DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4230dyt1ge3-datasheets-2231.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 186.993455mg | 8 | No | 3.2W | 2 | 2W | 2 | 8-SO | 950pF | 17 ns | 12ns | 10 ns | 18 ns | 7.3A | 20V | 30V | 3.2W | 20.5mOhm | 30V | 2 N-Channel (Dual) | 950pF @ 15V | 20.5mOhm @ 8A, 10V | 3V @ 250μA | 8A | 25nC @ 10V | Logic Level Gate | 20.5 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||
| SI3983DV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si3983dvt1e3-datasheets-4446.pdf | SOT-23-6 Thin, TSOT-23-6 | 19.986414mg | 6 | 830mW | SI3983 | 2 | Dual | 6-TSOP | 2.1A | 8V | 20V | 830mW | 110mOhm | -20V | 2 P-Channel (Dual) | 110mOhm @ 2.5A, 4.5V | 1.1V @ 250μA | 2.1A | 7.5nC @ 4.5V | Logic Level Gate | 110 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4544DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4544dyt1ge3-datasheets-2234.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | No | 2.4W | GULL WING | Dual | 2.4W | 2 | R-PDSO-G8 | 13 ns | 6.5A | 20V | SILICON | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 20A | 0.035Ohm | 30V | N and P-Channel, Common Drain | 35m Ω @ 6.5A, 10V | 1V @ 250μA (Min) | 35nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4622DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SkyFET®, TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4622dyt1ge3-datasheets-1933.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 8 | 186.993455mg | 8 | EAR99 | No | 3.1W | GULL WING | SI4622 | 8 | 2 | 2.2W | FET General Purpose Power | 14 ns | 12ns | 11 ns | 21 ns | 8A | 20V | 30V | METAL-OXIDE SEMICONDUCTOR | 3.3W 3.1W | 8A | 2 N-Channel (Dual) | 2458pF @ 15V | 16m Ω @ 9.6A, 10V | 2.5V @ 1mA | 60nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||
| SI4544DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4544dyt1ge3-datasheets-2234.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 186.993455mg | 35MOhm | 8 | yes | EAR99 | No | e3 | MATTE TIN | 2.4W | DUAL | GULL WING | 260 | 8 | 40 | 2.4W | 2 | 13 ns | 15ns | 14 ns | 37 ns | 6.5A | 20V | SILICON | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 30V | N and P-Channel, Common Drain | 35m Ω @ 6.5A, 10V | 1V @ 250μA (Min) | 35nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||
| SI3905DV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si3905dvt1ge3-datasheets-2249.pdf | SOT-23-6 Thin, TSOT-23-6 | 19.986414mg | 1.15W | 2 | Dual | 6-TSOP | 2.5A | 8V | 8V | 1.15W | 125mOhm | 2 P-Channel (Dual) | 125mOhm @ 2.5A, 4.5V | 450mV @ 250μA (Min) | 6nC @ 4.5V | Logic Level Gate | 125 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4834CDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 150°C | -55°C | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4834cdyt1e3-datasheets-2250.pdf | 8-SOIC (0.154, 3.90mm Width) | 15 Weeks | 8 | No | 2W | SI4834 | 2W | 2 | 8-SO | 950pF | 17 ns | 12ns | 10 ns | 18 ns | 8A | 20V | 30V | 30V | 2.9W | 20mOhm | 2 N-Channel (Dual) | 950pF @ 15V | 3 V | 20mOhm @ 8A, 10V | 3V @ 1mA | 8A | 25nC @ 10V | Standard | 20 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||
| SI4226DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4226dyt1ge3-datasheets-5518.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 8 | 186.993455mg | 8 | yes | EAR99 | No | e3 | MATTE TIN | 3.2W | GULL WING | 260 | SI4226 | 8 | Dual | 30 | 2W | 2 | 14 ns | 10ns | 8 ns | 30 ns | 7.5A | 12V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 0.0195Ohm | 25V | 2 N-Channel (Dual) | 1255pF @ 15V | 19.5m Ω @ 7A, 4.5V | 2V @ 250μA | 8A | 36nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||
| SI4330DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4330dyt1e3-datasheets-4441.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | yes | EAR99 | No | e3 | MATTE TIN | 1.1W | GULL WING | 260 | SI4330 | 8 | Dual | 40 | 1.1W | 2 | R-PDSO-G8 | 10 ns | 10ns | 10 ns | 40 ns | 6.6A | 20V | SILICON | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 0.0165Ohm | 30V | 2 N-Channel (Dual) | 16.5m Ω @ 8.7A, 10V | 3V @ 250μA | 20nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||
| IRF9358PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf9358trpbf-datasheets-5206.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | No SVHC | 16.3MOhm | 8 | EAR99 | No | e3 | Matte Tin (Sn) | 2W | GULL WING | IRF9358PBF | Dual | 2W | 2 | Other Transistors | 5.7 ns | 7.2ns | 69 ns | 146 ns | 9.2A | 20V | SILICON | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 83 ns | 73A | -30V | 2 P-Channel (Dual) | 1740pF @ 25V | -1.8 V | 16.3m Ω @ 9.2A, 10V | 2.4V @ 25μA | 38nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||
| SI3993DV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si3993dvt1e3-datasheets-4452.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | 19.986414mg | Unknown | 6 | yes | EAR99 | No | e3 | PURE MATTE TIN | 830mW | GULL WING | 260 | SI3993 | 6 | 2 | Dual | 30 | 830mW | 2 | Other Transistors | 10 ns | 16ns | 12 ns | 17 ns | -2.2A | 20V | SILICON | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | -3V | 1.8A | 0.133Ohm | -30V | 2 P-Channel (Dual) | -3 V | 133m Ω @ 2.2A, 10V | 3V @ 250μA | 1.8A | 5nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||
| FDS8949-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fds8949f085-datasheets-2100.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 7 Weeks | ACTIVE (Last Updated: 4 days ago) | yes | YES | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | FET General Purpose Power | Not Qualified | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 2W | 40V | 40V | METAL-OXIDE SEMICONDUCTOR | 2W | 6A | 20A | 0.029Ohm | 26 mJ | 2 N-Channel (Dual) | 955pF @ 20V | 29m Ω @ 6A, 10V | 3V @ 250μA | 6A | 11nC @ 5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRF7343Q | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 1999 | /files/infineontechnologies-auirf7343qtr-datasheets-5535.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | compliant | 8541.29.00.95 | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | 260 | 30 | 2 | Not Qualified | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | 55V | 55V | METAL-OXIDE SEMICONDUCTOR | 2W | MS-012AA | 4.7A | 38A | 0.05Ohm | 72 mJ | N and P-Channel | 740pF @ 25V | 50m Ω @ 4.7A, 10V | 1V @ 250μA | 4.7A 3.4A | 36nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||
| IRLHS6276TR2PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | 2013 | /files/infineontechnologies-irlhs6276trpbf-datasheets-6645.pdf | 6-PowerVDFN | 2.1mm | 950μm | 2.1mm | No SVHC | 6 | No | 1.5W | IRLHS6276PBF | Dual | 1.5W | 2 | 6-PQFN Dual (2x2) | 310pF | 4.4 ns | 9.3ns | 4.9 ns | 10 ns | 4.5A | 12V | 20V | 800mV | 1.5W | 7.8 ns | 45mOhm | 20V | 2 N-Channel (Dual) | 310pF @ 10V | 800 mV | 45mOhm @ 3.4A, 4.5V | 1.1V @ 10μA | 4.5A | 3.1nC @ 4.5V | Logic Level Gate | 45 mΩ | |||||||||||||||||||||||||||||||||||||||||||
| SI1563EDH-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si1563edht1e3-datasheets-4323.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 6 | yes | EAR99 | ESD PROTECTION | No | e3 | PURE MATTE TIN | 570mW | DUAL | GULL WING | 260 | SI1563 | 6 | 30 | 2 | Other Transistors | 1.13A | 12V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 0.28Ohm | N and P-Channel | 280m Ω @ 1.13A, 4.5V | 1V @ 100μA | 1.13A 880mA | 1nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||
| SI1905BDH-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2010 | /files/vishaysiliconix-si1905bdht1e3-datasheets-2156.pdf | 6-TSSOP, SC-88, SOT-363 | Lead Free | Unknown | 542MOhm | 6 | No | 357mW | SI1905 | Dual | 3.01W | 2 | SC-70-6 (SOT-363) | 62pF | 9 ns | 40ns | 60 ns | 50 ns | -630mA | 8V | 8V | -1V | 357mW | 542mOhm | 2 P-Channel (Dual) | 62pF @ 4V | -1 V | 542mOhm @ 580mA, 4.5V | 1V @ 250μA | 630mA | 1.5nC @ 4.5V | Logic Level Gate | 542 mΩ | |||||||||||||||||||||||||||||||||||||||||||||
| IRF6702M2DTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 2010 | /files/infineontechnologies-irf6702m2dtrpbf-datasheets-2165.pdf | DirectFET™ Isometric MA | 30V | 2.7W | 2 N-Channel (Dual) | 1380pF @ 15V | 6.6m Ω @ 15A, 10V | 2.35V @ 25μA | 15A | 14nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3529DV-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si3529dvt1e3-datasheets-2169.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | No | 1.4W | Dual | 1.15W | 2 | 6-TSOP | 205pF | 38ns | 38 ns | 10 ns | 1.95A | 20V | 40V | 1.4W | 215mOhm | 40V | N and P-Channel | 205pF @ 20V | 125mOhm @ 2.2A, 10V | 3V @ 250μA | 2.5A 1.95A | 7nC @ 10V | Logic Level Gate | 125 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF6702M2DTR1PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | 2010 | /files/infineontechnologies-irf6702m2dtrpbf-datasheets-2165.pdf | DirectFET™ Isometric MA | 4 | EAR99 | compliant | YES | BOTTOM | NO LEAD | 2 | Not Qualified | R-XBCC-N4 | SILICON | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 2.7W | 15A | 130A | 0.0066Ohm | 71 mJ | 2 N-Channel (Dual) | 1380pF @ 15V | 6.6m Ω @ 15A, 10V | 2.35V @ 25μA | 15A | 14nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1970DH-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si1970dht1e3-datasheets-4363.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 6 | EAR99 | No | 1.25W | GULL WING | SI1970 | 740mW | 2 | 1.3A | 12V | SILICON | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 2 N-Channel (Dual) | 95pF @ 15V | 225m Ω @ 1.2A, 4.5V | 1.6V @ 250μA | 3.8nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3909DV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si3909dvt1ge3-datasheets-2192.pdf | SOT-23-6 Thin, TSOT-23-6 | 19.986414mg | 200mOhm | 1.15W | 2 | Dual | 6-TSOP | 1.8A | 12V | 20V | 1.15W | 200mOhm | 2 P-Channel (Dual) | 200mOhm @ 1.8A, 4.5V | 500mV @ 250μA (Min) | 4nC @ 4.5V | Logic Level Gate | 200 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4953ADY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si4953adyt1e3-datasheets-4570.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | Unknown | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | 1.1W | GULL WING | 260 | SI4953 | 8 | Dual | 30 | 2W | 2 | Other Transistors | 7 ns | 10ns | 20 ns | 40 ns | -4.9A | 20V | METAL-OXIDE SEMICONDUCTOR | -1V | 3.7A | 0.053Ohm | 30V | 2 P-Channel (Dual) | -1 V | 53m Ω @ 4.9A, 10V | 1V @ 250μA (Min) | 3.7A | 25nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||
| SIA950DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sia950djt1ge3-datasheets-2084.pdf | PowerPAK® SC-70-6 Dual | 6 | 6 | yes | EAR99 | No | e3 | MATTE TIN | 7W | 260 | SIA950 | 6 | Dual | 40 | 1.9W | 2 | FET General Purpose Power | 10 ns | 15ns | 15 ns | 25 ns | 470mA | 16V | SILICON | DRAIN | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 0.47A | 190V | 2 N-Channel (Dual) | 90pF @ 100V | 3.8 Ω @ 360mA, 4.5V | 1.4V @ 250μA | 950mA | 4.5nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||
| SIS902DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/vishaysiliconix-sis902dnt1ge3-datasheets-2091.pdf | PowerPAK® 1212-8 Dual | 6 | 8 | yes | EAR99 | No | 15.4W | C BEND | 260 | SIS902 | 8 | 40 | 3.1W | 2 | S-XDSO-C6 | 17 ns | 18ns | 9 ns | 12 ns | 3A | 20V | SILICON | DRAIN | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 4A | 8A | 75V | 2 N-Channel (Dual) | 175pF @ 38V | 186m Ω @ 3A, 10V | 2.5V @ 250μA | 4A | 6nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||
| FDD8426H | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | /files/onsemiconductor-fdd8426h-datasheets-2097.pdf | TO-252-5, DPak (4 Leads + Tab), TO-252AD | compliant | NOT SPECIFIED | NOT SPECIFIED | 40V | 1.3W | N and P-Channel | 2735pF @ 20V | 12m Ω @ 12A, 10V | 3V @ 250μA | 12A 10A | 53nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI9934BDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si9934bdyt1e3-datasheets-4798.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | Unknown | 8 | yes | EAR99 | No | e3 | MATTE TIN | 1.1W | GULL WING | 250 | SI9934 | 8 | Dual | 40 | 1.1W | 2 | Other Transistors | 19 ns | 35ns | 50 ns | 80 ns | 4.8A | 8V | SILICON | 12V | METAL-OXIDE SEMICONDUCTOR | -1.4V | 0.035Ohm | 12V | 2 P-Channel (Dual) | -1.4 V | 35m Ω @ 6.4A, 4.5V | 1.4V @ 250μA | 20nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||
| SI5980DU-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/vishaysiliconix-si5980dut1ge3-datasheets-2041.pdf | PowerPAK® ChipFET™ Dual | 6 | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | 7.8W | 260 | SI5980 | 8 | Dual | 30 | 2W | 2 | FET General Purpose Powers | R-XDSO-N6 | 8 ns | 11ns | 9 ns | 8 ns | 2.5A | 20V | DRAIN | SWITCHING | 100V | METAL-OXIDE SEMICONDUCTOR | 1.3A | 0.567Ohm | 100V | 2 N-Channel (Dual) | 78pF @ 50V | 567m Ω @ 400mA, 10V | 4V @ 250μA | 3.3nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||
| SI5904DC-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si5904dct1e3-datasheets-4621.pdf | 8-SMD, Flat Lead | 8 | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | 1.1W | C BEND | 260 | SI5904 | 8 | 30 | 1.1W | 2 | FET General Purpose Powers | 12 ns | 35ns | 9 ns | 19 ns | 3.1A | 12V | SILICON | 20V | METAL-OXIDE SEMICONDUCTOR | 0.075Ohm | 2 N-Channel (Dual) | 75m Ω @ 3.1A, 4.5V | 1.5V @ 250μA | 6nC @ 4.5V | Logic Level Gate |
