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ContactMOSFETs Transistors Arrays(4365)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max |
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| SI9945AEY-T1 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si9945aeyt1-datasheets-1667.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 186.993455mg | 8 | 2.4W | SI9945 | 2 | Dual | 2.4W | 2 | 8-SO | 9 ns | 10ns | 8 ns | 21 ns | 3.7A | 20V | 60V | 2.4W | 80mOhm | 60V | 2 N-Channel (Dual) | 80mOhm @ 3.7A, 10V | 3V @ 250μA | 3.7A | 20nC @ 10V | Logic Level Gate | 80 mΩ | ||||||||||||||||||||||||||||||||||||||||||||
| IRF8910GTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2005 | /files/infineontechnologies-irf8910gtrpbf-datasheets-1623.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | 8 | 8 | EAR99 | No | 2W | GULL WING | IRF8910GPBF | Single | 2W | 1 | 6.2 ns | 10ns | 4.1 ns | 9.7 ns | 10A | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | MS-012AA | 0.0134Ohm | 19 mJ | 20V | 2 N-Channel (Dual) | 960pF @ 10V | 13.4m Ω @ 10A, 10V | 2.55V @ 250μA | 11nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||
| AON7804_101 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | /files/alphaomegasemiconductorinc-aon7804101-datasheets-1685.pdf | 8-PowerSMD, Flat Leads | 30V | 3.1W Ta 17W Tc | 2 N-Channel (Dual) | 888pF @ 15V | 21m Ω @ 8A, 10V | 2.4V @ 250μA | 9A Ta 22A Tc | 18nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFH7911TR2PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 2 (1 Year) | 150°C | -55°C | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfh7911trpbf-datasheets-0368.pdf | 18-PowerVQFN | 5.9944mm | 939.8μm | 5mm | No SVHC | 18 | No | 3.4W | IRFH7911PBF | Dual | 3.4W | 2 | PQFN (5x6) | 1.06nF | 35ns | 14 ns | 28 ns | 28A | 20V | 30V | 2.35V | 2.4W 3.4W | 20 ns | 3mOhm | 30V | 2 N-Channel (Dual) | 1060pF @ 15V | 2.35 V | 8.6mOhm @ 12A, 10V | 2.35V @ 25μA | 13A 28A | 12nC @ 4.5V | Logic Level Gate | 8.6 mΩ | |||||||||||||||||||||||||||||||||||||||||
| IRF6723M2DTR1P | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2009 | /files/infineontechnologies-irf6723m2dtrpbf-datasheets-1659.pdf | DirectFET™ Isometric MA | compliant | YES | IRF6723M2DPBF | FET General Purpose Power | 25W | 30V | METAL-OXIDE SEMICONDUCTOR | 2.7W | 47A | 2 N-Channel (Dual) | 1380pF @ 15V | 6.6m Ω @ 15A, 10V | 2.35V @ 25μA | 15A | 14nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ALD1115MAL | Advanced Linear Devices Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 0°C~70°C TJ | Tube | 1 (Unlimited) | RoHS Compliant | 2006 | /files/advancedlineardevicesinc-ald1115pal-datasheets-5981.pdf | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 10 Weeks | yes | unknown | 500mW | Dual | 500mW | -2mA | 13.2V | 10.6V | -12V | N and P-Channel Complementary | 3pF @ 5V | 1800 Ω @ 5V | 1V @ 1μA | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF8910GPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | 2009 | /files/infineontechnologies-irf8910gtrpbf-datasheets-1623.pdf | 8-SOIC (0.154, 3.90mm Width) | 1.4986mm | 3.9878mm | 8 | No | 2W | IRF8910GPBF | Dual | 2W | 2 | 8-SO | 960pF | 6.2 ns | 10ns | 4.1 ns | 9.7 ns | 10A | 20V | 20V | 2W | 18.3mOhm | 20V | 2 N-Channel (Dual) | 960pF @ 10V | 13.4mOhm @ 10A, 10V | 2.55V @ 250μA | 10A | 11nC @ 4.5V | Logic Level Gate | 13.4 mΩ | ||||||||||||||||||||||||||||||||||||||||||||
| FMP26-02P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Polar™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/ixys-fmp2602p-datasheets-1731.pdf | i4-Pac™-5 | 5 | 5 | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | e1 | TIN SILVER COPPER | 125W | SINGLE | NOT SPECIFIED | 5 | NOT SPECIFIED | 125W | 2 | Other Transistors | Not Qualified | 17A | 20V | SILICON | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 26A | 120A | 0.06Ohm | 1000 mJ | 200V | N and P-Channel | 2720pF @ 25V | 60m Ω @ 25A, 10V | 5V @ 250μA | 26A 17A | 70nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||
| IRF7338TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | 2004 | /files/infineon-irf7338trpbf-datasheets-1238.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 2W | IRF7338PBF | 2W | 2 | 8-SO | 640pF | 3A | 8V | 12V | 2W | 34mOhm | 12V | N and P-Channel | 640pF @ 9V | 34mOhm @ 6A, 4.5V | 1.5V @ 250μA | 6.3A 3A | 8.6nC @ 4.5V | Logic Level Gate | 34 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD75211W1723 | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/texasinstruments-csd75211w1723-datasheets-1546.pdf | 12-UFBGA, DSBGA | Contains Lead | 12 | No SVHC | 12 | no | EAR99 | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 1.5W | BOTTOM | BALL | 260 | CSD75211 | 12 | Dual | 1.5W | 2 | Other Transistors | 3.7 ns | 4.1ns | 1.6 ns | 9.1 ns | 4.5A | 8V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | -700mV | 0.07Ohm | 20V | 2 P-Channel (Dual) | 600pF @ 10V | -700 mV | 40m Ω @ 2A, 4.5V | 1.1V @ 250μA | 5.9nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||
| IRF9362PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf9362trpbf-datasheets-5058.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Lead Free | 8 | No SVHC | 8 | EAR99 | Tin | No | 2W | GULL WING | IRF9362PBF | Dual | 2W | 2 | Other Transistors | 5.2 ns | 5.9ns | 53 ns | 115 ns | -8A | 20V | SILICON | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | -1.8V | 48 ns | 8A | 64A | 94 mJ | -30V | 2 P-Channel (Dual) | 1300pF @ 25V | -1.8 V | 21m Ω @ 8A, 10V | 2.4V @ 25μA | 8A | 39nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||
| IRF8852TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2009 | /files/infineontechnologies-irf8852trpbf-datasheets-1595.pdf | 8-TSSOP (0.173, 4.40mm Width) | 3.0988mm | 8 | 8 | ULTRA LOW RESISTANCE | No | 1W | GULL WING | IRF8852PBF | Dual | 1W | 2 | 11.4 ns | 10.9ns | 28.9 ns | 70.8 ns | 7.8A | 20V | SILICON | SWITCHING | 25V | METAL-OXIDE SEMICONDUCTOR | MO-153AA | 0.0113Ohm | 25V | 2 N-Channel (Dual) | 1151pF @ 20V | 11.3m Ω @ 7.8A, 10V | 2.35V @ 25μA | 9.5nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||
| SI9936DY,518 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | 150°C TJ | Tape & Reel (TR) | 2 (1 Year) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/nxpusainc-si9936dy518-datasheets-1633.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | e4 | NICKEL PALLADIUM GOLD | YES | GULL WING | SI9936 | 8 | 2 | Not Qualified | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 900mW | MS-012AA | 5A | 40A | 0.05Ohm | 2 N-Channel (Dual) | 50m Ω @ 5A, 10V | 1V @ 250μA | 5A | 35nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||
| SI1553DL-T1 | Vishay Siliconix | $0.68 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si1553dlt1e3-datasheets-4314.pdf | 6-TSSOP, SC-88, SOT-363 | 2mm | 1mm | 1.25mm | 7.512624mg | 6 | 270mW | SI1553 | 2 | 300mW | 2 | SC-70-6 (SOT-363) | 7.5 ns | 20ns | 20 ns | 8.5 ns | 660mA | 12V | 20V | 270mW | 385mOhm | 20V | N and P-Channel | 385mOhm @ 660mA, 4.5V | 600mV @ 250μA (Min) | 660mA 410mA | 1.2nC @ 4.5V | Logic Level Gate | 385 mΩ | ||||||||||||||||||||||||||||||||||||||||||||
| IRFI4019HG-117P | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2009 | /files/infineontechnologies-irfi4019hg117p-datasheets-1635.pdf | TO-220-5 Full Pack (Formed Leads) | 5 | 5 | EAR99 | HIGH RELIABILITY | No | 18W | SINGLE | Dual | 18W | 2 | FET General Purpose Power | 7 ns | 6.6ns | 3.1 ns | 13 ns | 8.7A | 20V | SILICON | ISOLATED | SWITCHING | 150V | METAL-OXIDE SEMICONDUCTOR | 34A | 77 mJ | 150V | 2 N-Channel (Dual) | 810pF @ 25V | 95m Ω @ 5.2A, 10V | 4.9V @ 50μA | 20nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||
| NX7002AKS/ZLX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | /files/nexperiausainc-nx7002aks115-datasheets-7861.pdf | 6-TSSOP, SC-88, SOT-363 | 60V | 1.06W | 2 N-Channel (Dual) | 17pF @ 10V | 4.5 Ω @ 100mA, 10V | 2.1V @ 250μA | 170mA Ta | 0.43nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EMH2412-TL-H | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/rochesterelectronicsllc-emh2412tlh-datasheets-1531.pdf | 8-SMD, Flat Lead | 8-EMH | 24V | 1.4W | 2 N-Channel (Dual) | 27mOhm @ 3A, 4.5V | 6A | 6.3nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| UPA2390T1P-E4-A | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FW276-TL-2H | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/rochesterelectronicsllc-fw276tl2h-datasheets-1533.pdf | 8-SOIC (0.154, 3.90mm Width) | 8-SOIC | 450V | 1.6W | 2 N-Channel (Dual) | 55pF @ 20V | 12.1Ohm @ 350mA, 10V | 4.5V @ 1mA | 700mA | 3.7nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOSD32338C | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | ROHS3 Compliant | 8-SOIC (0.154, 3.90mm Width) | 30V | 2W Ta | 2 N-Channel (Dual) | 310pF @ 15V | 30m Ω @ 6A, 10V | 2.4V @ 250μA | 6A Ta | 6.3nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| UPA2383T1P-E1-A#YK1 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| UPA2324T1P-E1-A | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7309PBF | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | /files/rochesterelectronicsllc-irf7309pbf-datasheets-1540.pdf | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N7002DW-7-G | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | Non-RoHS Compliant | 2013 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF8313PBF | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | ROHS3 Compliant | /files/rochesterelectronicsllc-irf8313pbf-datasheets-1541.pdf | 8-SOIC (0.154, 3.90mm Width) | 8-SO | 30V | 2W | 2 N-Channel (Dual) | 760pF @ 15V | 15.5mOhm @ 9.7A, 10V | 2.35V @ 25μA | 9.7A | 90nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RJK4034DJE-00#Z0 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 3 (168 Hours) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPG20N06S3L-23 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/infineontechnologies-ipg20n06s3l23-datasheets-1559.pdf | 8-PowerVDFN | 6 | 8 | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | MATTE TIN | 45W | FLAT | 260 | *PG20N06 | 8 | Dual | 40 | 45W | 2 | FET General Purpose Power | Not Qualified | R-PDSO-F6 | 35ns | 75 ns | 40 ns | 20A | 16V | SILICON | DRAIN | 55V | METAL-OXIDE SEMICONDUCTOR | 33A | 0.023Ohm | 110 mJ | 55V | 2 N-Channel (Dual) | 2950pF @ 25V | 23m Ω @ 16A, 10V | 2.2V @ 20μA | 42nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||
| DMN3012LFG-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/diodesincorporated-dmn3012lfg13-datasheets-1260.pdf | 8-PowerLDFN | 21 Weeks | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 30V | 2.2W | 2 N-Channel (Dual) | 850pF @ 15V 1480pF @ 15V | 12m Ω @ 15A, 5V, 6m Ω @ 15A, 5V | 2.1V @ 250μA, 1.15V @ 250μA | 20A Tc | 6.1nC @ 4.5V, 12.6nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPG20N06S3L-35 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipg20n06s3l35-datasheets-1565.pdf | 8-PowerVDFN | 6 | 8 | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | MATTE TIN | 30W | FLAT | 260 | *PG20N06 | 8 | 40 | 2 | Not Qualified | R-PDSO-F6 | 20A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | 55V | 55V | METAL-OXIDE SEMICONDUCTOR | 30W | 0.035Ohm | 55 mJ | 2 N-Channel (Dual) | 1730pF @ 25V | 35m Ω @ 11A, 10V | 2.2V @ 15μA | 23nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||
| UPA2378T1P-E1-A | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | RoHS Compliant | YES | 150°C | FET General Purpose Power | N-CHANNEL | 1.8W | METAL-OXIDE SEMICONDUCTOR | 8A |
