IRF5851TRPBF

IRF5851TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Utmel


  • Manufacturer: Infineon Technologies
  • NO: 376-IRF5851TRPBF
  • Package: SOT-23-6 Thin, TSOT-23-6
  • Datasheet: pdf
  • Stock: 2155
  • Description: IRF5851TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Utmel(Kg)

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SPECIFICATIONS

Parameters
Max Power Dissipation 960mW
Base Part Number IRF5851PBF
Power Dissipation 960mW
Power - Max 960mW
FET Type N and P-Channel
Rds On (Max) @ Id, Vgs 90mOhm @ 2.7A, 4.5V
Vgs(th) (Max) @ Id 1.25V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 400pF @ 15V
Current - Continuous Drain (Id) @ 25°C 2.7A 2.2A
Gate Charge (Qg) (Max) @ Vgs 6nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Continuous Drain Current (ID) 2.7A
Threshold Voltage 1.25V
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 20V
Dual Supply Voltage 20V
Input Capacitance 400pF
FET Feature Logic Level Gate
Drain to Source Resistance 90mOhm
Rds On Max 90 mΩ
Nominal Vgs 1.25 V
Height 900μm
Length 3mm
Width 1.5mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Number of Pins 6
Supplier Device Package 6-TSOP
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series HEXFET®
Published 2010
Part Status Obsolete
Moisture Sensitivity Level (MSL) 2 (1 Year)
Termination SMD/SMT
Resistance 90mOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C

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