IRF7752TRPBF

MOSFET 2N-CH 30V 4.6A 8TSSOP


  • Manufacturer: Infineon Technologies
  • NO: 376-IRF7752TRPBF
  • Package: 8-TSSOP (0.173, 4.40mm Width)
  • Datasheet: pdf
  • Stock: 9941
  • Description: MOSFET 2N-CH 30V 4.6A 8TSSOP(Kg)

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  • Delivery: Delivery
  • Payment: payment

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

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Delivery Time

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.transport

SPECIFICATIONS

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-TSSOP (0.173, 4.40mm Width)
Number of Pins 8
Supplier Device Package 8-TSSOP
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 30mOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 1W
Base Part Number IRF7752PBF
Number of Elements 2
Element Configuration Dual
Power Dissipation 1W
Turn On Delay Time 7.2 ns
Power - Max 1W
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 30mOhm @ 4.6A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 861pF @ 25V
Current - Continuous Drain (Id) @ 25°C 4.6A
Gate Charge (Qg) (Max) @ Vgs 9nC @ 4.5V
Rise Time 9.1ns
Drain to Source Voltage (Vdss) 30V
Fall Time (Typ) 11 ns
Turn-Off Delay Time 25 ns
Continuous Drain Current (ID) 4.6A
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 30V
Input Capacitance 861pF
FET Feature Logic Level Gate
Drain to Source Resistance 36mOhm
Rds On Max 30 mΩ
Nominal Vgs 2 V
Height 1.0414mm
Length 3.0988mm
Width 4.4958mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status RoHS Compliant
Lead Free Lead Free

In Stock

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