IRFH7911TR2PBF

IRFH7911TR2PBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Utmel


  • Manufacturer: Infineon Technologies
  • NO: 376-IRFH7911TR2PBF
  • Package: 18-PowerVQFN
  • Datasheet: pdf
  • Stock: 11235
  • Description: IRFH7911TR2PBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Utmel(Kg)

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SPECIFICATIONS

Parameters
Base Part Number IRFH7911PBF
Number of Elements 2
Element Configuration Dual
Power Dissipation 3.4W
Power - Max 2.4W 3.4W
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 8.6mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 2.35V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds 1060pF @ 15V
Current - Continuous Drain (Id) @ 25°C 13A 28A
Gate Charge (Qg) (Max) @ Vgs 12nC @ 4.5V
Rise Time 35ns
Drain to Source Voltage (Vdss) 30V
Fall Time (Typ) 14 ns
Turn-Off Delay Time 28 ns
Continuous Drain Current (ID) 28A
Threshold Voltage 2.35V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Input Capacitance 1.06nF
Recovery Time 20 ns
FET Feature Logic Level Gate
Drain to Source Resistance 3mOhm
Rds On Max 8.6 mΩ
Nominal Vgs 2.35 V
Height 939.8μm
Length 5.9944mm
Width 5mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status RoHS Compliant
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 18-PowerVQFN
Number of Pins 18
Supplier Device Package PQFN (5x6)
Packaging Cut Tape (CT)
Series HEXFET®
Published 2012
Part Status Obsolete
Moisture Sensitivity Level (MSL) 2 (1 Year)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 3.4W

In Stock

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