SI4501ADY-T1-GE3

MOSFET N/P-CH 30V/8V 8-SOIC


  • Manufacturer: Vishay Siliconix
  • NO: 880-SI4501ADY-T1-GE3
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: pdf
  • Stock: 5276
  • Description: MOSFET N/P-CH 30V/8V 8-SOIC(Kg)

Quantity:


  • Delivery: Delivery
  • Payment: payment

In Stock

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IMPORTANT NOTICE

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Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.transport

SPECIFICATIONS

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Supplier Device Package 8-SO
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series TrenchFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 1.3W
Base Part Number SI4501
Power Dissipation 1.3W
Power - Max 1.3W
FET Type N and P-Channel, Common Drain
Rds On (Max) @ Id, Vgs 18mOhm @ 8.8A, 10V
Vgs(th) (Max) @ Id 1.8V @ 250μA
Current - Continuous Drain (Id) @ 25°C 6.3A 4.1A
Gate Charge (Qg) (Max) @ Vgs 20nC @ 5V
Drain to Source Voltage (Vdss) 30V 8V
Continuous Drain Current (ID) 4.1A
Threshold Voltage 800mV
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage 8V
FET Feature Logic Level Gate
Drain to Source Resistance 42mOhm
Rds On Max 18 mΩ
REACH SVHC Unknown
RoHS Status ROHS3 Compliant

In Stock

Please send RFQ , we will respond immediately.