IRF5850TRPBF

IRF5850TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Utmel


  • Manufacturer: Infineon Technologies
  • NO: 376-IRF5850TRPBF
  • Package: SOT-23-6 Thin, TSOT-23-6
  • Datasheet: pdf
  • Stock: 16645
  • Description: IRF5850TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Utmel(Kg)

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SPECIFICATIONS

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Number of Pins 6
Supplier Device Package 6-TSOP
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 2 (1 Year)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 960mW
Base Part Number IRF5850PBF
Number of Elements 2
Element Configuration Dual
Power Dissipation 960mW
Turn On Delay Time 8.3 ns
Power - Max 960mW
FET Type 2 P-Channel (Dual)
Rds On (Max) @ Id, Vgs 135mOhm @ 2.2A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 320pF @ 15V
Current - Continuous Drain (Id) @ 25°C 2.2A
Gate Charge (Qg) (Max) @ Vgs 5.4nC @ 4.5V
Rise Time 14ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 28 ns
Turn-Off Delay Time 31 ns
Continuous Drain Current (ID) -2.2A
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage -20V
Input Capacitance 320pF
FET Feature Logic Level Gate
Drain to Source Resistance 220mOhm
Rds On Max 135 mΩ
Height 1.143mm
Length 2.9972mm
Width 1.75mm
Radiation Hardening No
RoHS Status RoHS Compliant

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