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IRF5852TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IRF5852TRPBF
- Package: SOT-23-6 Thin, TSOT-23-6
- Datasheet:
- Stock: 3901
- Description: IRF5852TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Number of Pins | 6 |
| Supplier Device Package | 6-TSOP |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2010 |
| Series | HEXFET® |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 2 (1 Year) |
| Termination | SMD/SMT |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 960mW |
| Base Part Number | IRF5852PBF |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Power Dissipation | 960mW |
| Turn On Delay Time | 6.6 ns |
| Power - Max | 960mW |
| FET Type | 2 N-Channel (Dual) |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 2.7A, 4.5V |
| Vgs(th) (Max) @ Id | 1.25V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 400pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 2.7A |
| Gate Charge (Qg) (Max) @ Vgs | 6nC @ 4.5V |
| Rise Time | 1.2ns |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time (Typ) | 2.4 ns |
| Turn-Off Delay Time | 15 ns |
| Continuous Drain Current (ID) | 2.7A |
| Threshold Voltage | 1.25V |
| Gate to Source Voltage (Vgs) | 12V |
| Drain to Source Breakdown Voltage | 20V |
| Dual Supply Voltage | 20V |
| Input Capacitance | 400pF |
| FET Feature | Logic Level Gate |
| Drain to Source Resistance | 90mOhm |
| Rds On Max | 90 mΩ |
| Nominal Vgs | 1.25 V |
| Height | 900μm |
| Length | 3mm |
| Width | 1.5mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
IRF5852TRPBF Description
These N-channel MOSFET from International Rectifier Company use advanced technology to achieve extremely low on-resistance per silicon area. This advantage provides designers with extremely efficient devices for use in battery and load management applications. This dual TSOP-6 package is ideal for applications where PCB space is tight and maximum functionality is required. Because each package has two chips, IRF5852 can provide the function of two SOT-23 packages in a smaller footprint. Its unique heat dissipation design and RDS (on) reduction improve the current handling capacity.
IRF5852TRPBF Features
Ultra Low On-Resistance
Dual N-Channel MOSFET
Surface Mount
Available in Tape & Reel
Low Gate Charge
IRF5852TRPBF Applications
battery and load management applications
