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ContactMOSFETs Transistors Arrays(4365)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature |
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| US6M2TR | ROHM Semiconductor | $0.55 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | SMD/SMT | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | 1.5A | 6-SMD, Flat Leads | Lead Free | 6 | 16 Weeks | No SVHC | 340MOhm | 6 | yes | EAR99 | No | e2 | TIN COPPER | 1W | 260 | *M2 | 6 | Dual | 10 | 1W | 2 | Other Transistors | 25 ns | 1A | 12V | 30V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | 30V 20V | METAL-OXIDE SEMICONDUCTOR | 1.5V | -20V | N and P-Channel | 80pF @ 10V | 1.5 V | 240m Ω @ 1.5A, 4.5V | 1.5V @ 1mA | 1.5A 1A | 2.2nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||
| DMC4047LSD-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/diodesincorporated-dmc4047lsd13-datasheets-4583.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.95mm | 1.5mm | 3.95mm | 8 | 23 Weeks | 73.992255mg | 8 | EAR99 | HIGH RELIABILITY | e3 | Matte Tin (Sn) | AEC-Q101 | 1.8W | DUAL | GULL WING | 2 | 2 | 8.7 ns | 19.6ns | 25.5 ns | 34.9 ns | 5.1A | 20V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 1.3W | 7A | 40V | N and P-Channel | 1060pF @ 20V | 24m Ω @ 6A, 10V | 2.4V @ 250μA | 7A 5.1A | 19.1nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||
| SI4936CDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4936cdyt1ge3-datasheets-4603.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | Unknown | 40mOhm | 8 | EAR99 | Tin | No | e3 | 2.3W | GULL WING | 260 | SI4936 | 8 | 30 | 2.3W | 2 | 12 ns | 13ns | 13 ns | 16 ns | 5A | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 3V | 5A | 30V | 2 N-Channel (Dual) | 325pF @ 15V | 40m Ω @ 5A, 10V | 3V @ 250μA | 5.8A | 9nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||
| ZXMC10A816N8TC | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/diodesincorporated-zxmc10a816n8tc-datasheets-4076.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.95mm | 1.5mm | 3.95mm | 8 | 17 Weeks | 73.992255mg | No SVHC | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.8W | DUAL | GULL WING | 260 | 8 | 40 | 2.1W | 2 | Other Transistors | 4.3 ns | 5.2ns | 12 ns | 20 ns | 2A | 20V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | 100V | METAL-OXIDE SEMICONDUCTOR | 1.7A | 9.4A | 100V | N and P-Channel | 497pF @ 50V | 230m Ω @ 1A, 10V | 2.4V @ 250μA | 9.2nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||
| NTMFD4902NFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/onsemiconductor-ntmfd4902nft1g-datasheets-4144.pdf | 8-PowerTDFN | Lead Free | 8 | 17 Weeks | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | Tin | No | e3 | YES | 1.16W | FLAT | 8 | Dual | 2 | FET General Purpose Power | 13.3A | 20V | SILICON | DRAIN SOURCE | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 1.1W 1.16W | 13.5A | 60A | 0.01Ohm | 2 N-Channel (Dual), Schottky | 1150pF @ 15V | 6.5m Ω @ 10A, 10V | 2.2V @ 250μA | 10.3A 13.3A | 9.7nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||
| SQJ968EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TA | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sqj968ept1ge3-datasheets-4319.pdf | PowerPAK® SO-8 Dual | 4 | 12 Weeks | Unknown | 8 | EAR99 | 25W | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 25W | 2 | R-PSSO-G4 | 18A | 20V | SILICON | DRAIN | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 2V | 42W Tc | 0.0336Ohm | 4 mJ | 2 N-Channel (Dual) | 714pF @ 30V | 33.6m Ω @ 4.8A, 10V | 2.5V @ 250μA | 23.5A Tc | 18.5nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ4940AEY-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sq4940aeyt1ge3-datasheets-4275.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 12 Weeks | 506.605978mg | EAR99 | unknown | 4W | GULL WING | NOT SPECIFIED | 2 | Dual | NOT SPECIFIED | 2 | R-PDSO-G8 | 8 ns | 13ns | 9 ns | 20 ns | 8A | 20V | SILICON | 40V | 40V | METAL-OXIDE SEMICONDUCTOR | 8A | 55 pF | 2 N-Channel (Dual) | 741pF @ 20V | 24m Ω @ 5.3A, 10V | 2.5V @ 250μA | 43nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFD4C20NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2013 | /files/onsemiconductor-ntmfd4c20nt1g-datasheets-4111.pdf | 8-PowerTDFN | Lead Free | 24 Weeks | 8 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | Tin | No | e3 | Halogen Free | YES | 1.15W | 8 | Dual | FET General Purpose Power | 13.7A | 20V | 30V | METAL-OXIDE SEMICONDUCTOR | 1.09W 1.15W | 27.4A | 2 N-Channel (Dual) | 970pF @ 15V | 7.3m Ω @ 10A, 10V | 2.1V @ 250μA | 9.1A 13.7A | 9.3nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDS6900AS | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench®, SyncFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/onsemiconductor-fds6900as-datasheets-4198.pdf | 30V | 8.2A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 3.99mm | Lead Free | 8 | 18 Weeks | 187mg | No SVHC | 27MOhm | 8 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | Tin | e3 | 2W | GULL WING | NOT SPECIFIED | Dual | NOT SPECIFIED | 2W | 2 | FET General Purpose Power | Not Qualified | 4ns | 3 ns | 23 ns | 8.2A | 20V | 30V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 1.9V | 900mW | 6.9A | 30V | 2 N-Channel (Dual) | 600pF @ 15V | 1.9 V | 27m Ω @ 6.9A, 10V | 3V @ 250μA | 6.9A 8.2A | 15nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||
| SI7904BDN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7904bdnt1ge3-datasheets-7920.pdf | PowerPAK® 1212-8 Dual | 3.05mm | 1.04mm | 3.05mm | Lead Free | 6 | 14 Weeks | 30mOhm | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | 17.8W | C BEND | 260 | SI7904 | 8 | Dual | 30 | 2.5W | 2 | FET General Purpose Powers | S-XDSO-C6 | 5 ns | 15ns | 5 ns | 25 ns | 6A | 8V | SILICON | DRAIN | AMPLIFIER | 20V | METAL-OXIDE SEMICONDUCTOR | 6A | 2 N-Channel (Dual) | 860pF @ 10V | 30m Ω @ 7.1A, 4.5V | 1V @ 250μA | 24nC @ 8V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||
| FDS6898A | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/onsemiconductor-fds6898a-datasheets-4152.pdf | 20V | 9.4A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.75mm | 4mm | Lead Free | 8 | 10 Weeks | 187mg | No SVHC | 14MOhm | 8 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | Tin | No | e3 | 2W | GULL WING | 2 | Dual | 2W | 2 | FET General Purpose Power | 150°C | 10 ns | 15ns | 16 ns | 34 ns | 9.4A | 12V | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 500mV | 900mW | 20V | 2 N-Channel (Dual) | 1821pF @ 10V | 1 V | 14m Ω @ 9.4A, 4.5V | 1.5V @ 250μA | 23nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||
| SIA906EDJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sia906edjt1ge3-datasheets-4245.pdf | PowerPAK® SC-70-6 Dual | 2.05mm | 850μm | 2.05mm | Lead Free | 6 | 14 Weeks | 28.009329mg | 46mOhm | 6 | yes | EAR99 | Tin | C-07431-DUAL | unknown | e3 | 7.8W | NO LEAD | 260 | 6 | Dual | 40 | 1.9W | 2 | FET General Purpose Power | Not Qualified | 150°C | 5 ns | 12ns | 12 ns | 15 ns | 4.5A | 12V | SILICON | DRAIN | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 20V | 2 N-Channel (Dual) | 350pF @ 10V | 46m Ω @ 3.9A, 4.5V | 1.4V @ 250μA | 12nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||
| US6K1TR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/rohmsemiconductor-us6k1tr-datasheets-4206.pdf | 30V | 1.5A | 6-SMD, Flat Leads | Lead Free | 6 | 16 Weeks | No SVHC | 340MOhm | 6 | yes | EAR99 | No | e2 | Tin/Copper (Sn/Cu) | 1W | 260 | *K1 | 6 | Dual | 10 | 1W | 2 | FET General Purpose Power | 7 ns | 9ns | 6 ns | 15 ns | 1.5A | 12V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 1.5V | 30V | 2 N-Channel (Dual) | 80pF @ 10V | 240m Ω @ 1.5A, 4.5V | 1.5V @ 1mA | 2.2nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||
| ECH8660-TL-H | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2010 | /files/onsemiconductor-ech8660tlh-datasheets-4279.pdf | 8-SMD, Flat Lead | 2.9mm | 900μm | 2.3mm | Lead Free | 33 Weeks | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e6 | Tin/Bismuth (Sn/Bi) | Halogen Free | 1.5W | 8 | Dual | 45 ns | 4.5A | 20V | 30V | N and P-Channel | 240pF @ 10V | 59m Ω @ 2A, 10V | 4.4nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIZ322DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2018 | /files/vishaysiliconix-siz322dtt1ge3-datasheets-4273.pdf | 8-PowerWDFN | 800μm | 14 Weeks | EAR99 | unknown | NOT SPECIFIED | 2 | NOT SPECIFIED | 3.7W | 150°C | 10 ns | 15 ns | 19A | 16.7W Tc | 25V | 2 N-Channel (Dual) | 950pF @ 12.5V | 6.35m Ω @ 15A, 10V | 2.4V @ 250μA | 30A Tc | 20.1nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLHS6376TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-irlhs6376trpbf-datasheets-4321.pdf | 6-VDFN Exposed Pad | Lead Free | 6 | 12 Weeks | No SVHC | 6 | EAR99 | No | e3 | Matte Tin (Sn) | 1.5W | IRLHS6376 | Dual | 1.5W | 2 | FET General Purpose Power | 4.4 ns | 11ns | 9.4 ns | 11 ns | 3.6A | 12V | SILICON | DRAIN | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 800mV | 3.4A | 0.082Ohm | 30V | 2 N-Channel (Dual) | 270pF @ 25V | 800 mV | 63m Ω @ 3.4A, 4.5V | 1.1V @ 10μA | 2.8nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||
| NVMFD5C466NLT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2013 | /files/onsemiconductor-nvmfd5c466nlwft1g-datasheets-0963.pdf | 8-PowerTDFN | 48 Weeks | ACTIVE (Last Updated: 3 days ago) | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 40V | 3W Ta 40W Tc | 2 N-Channel (Dual) | 997pF @ 25V | 7.4m Ω @ 10A, 10V | 2.2V @ 30μA | 14A Ta 52A Tc | 7nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AO4800B | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/alphaomegasemiconductor-ao4800b-datasheets-1156.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 16 Weeks | 8 | EAR99 | No | 2W | GULL WING | 8 | 2W | 2 | FET General Purpose Power | 6.9A | 12V | SILICON | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 70 pF | 2 N-Channel (Dual) | 630pF @ 15V | 27m Ω @ 6.9A, 10V | 1.5V @ 250μA | 7nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| QS8K2TR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | 8-SMD, Flat Lead | Lead Free | 8 | 10 Weeks | 8 | yes | EAR99 | No | 1.25W | 260 | *K2 | 8 | 2 | 10 | 2 | 8 ns | 12ns | 13 ns | 29 ns | 3.5A | 12V | SILICON | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 0.077Ohm | 30V | 2 N-Channel (Dual) | 285pF @ 10V | 54m Ω @ 3.5A, 4.5V | 1.5V @ 1mA | 4.6nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||
| ZXMP6A17DN8TA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/diodesincorporated-zxmp6a17dn8ta-datasheets-4103.pdf | -60V | -3.1A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Contains Lead | 8 | 17 Weeks | 73.992255mg | No SVHC | 125mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 2.15W | GULL WING | 260 | 8 | 2 | Dual | 40 | 2.15W | 2 | Other Transistors | 2.6 ns | 3.4ns | 11.3 ns | 26.2 ns | 3.2A | 20V | SILICON | DRAIN | SWITCHING | 60V | METAL-OXIDE SEMICONDUCTOR | 1.81W | 11.1A | 2 P-Channel (Dual) | 637pF @ 30V | 125m Ω @ 2.3A, 10V | 1V @ 250μA (Min) | 2.7A | 17.7nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||
| ECH8654-TL-H | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/onsemiconductor-ech8654tlh-datasheets-3836.pdf | 8-SMD, Flat Lead | 2.9mm | 900μm | 2.3mm | Lead Free | 8 | 16 Weeks | 8 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e6 | Tin/Bismuth (Sn/Bi) | Halogen Free | YES | 1.5W | ECH8654 | 8 | Dual | 1.5W | 2 | 14 ns | 55ns | 68 ns | 92 ns | 5A | 10V | SILICON | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 5A | 40A | 2 P-Channel (Dual) | 960pF @ 10V | 38m Ω @ 3A, 4.5V | 11nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||
| DMHC4035LSD-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2013 | /files/diodesincorporated-dmhc4035lsd13-datasheets-4175.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.95mm | 1.5mm | 3.95mm | 23 Weeks | 73.992255mg | 8 | EAR99 | e3 | Matte Tin (Sn) | 1.5W | 2 | 3.6 ns | 2.9ns | 15.3 ns | 36.3 ns | 3.7A | 20V | 40V | 2 N and 2 P-Channel (H-Bridge) | 574pF @ 20V | 45m Ω @ 3.9A, 10V | 3V @ 250μA | 4.5A 3.7A | 12.5nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5922DU-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-si5922dut1ge3-datasheets-3546.pdf | PowerPAK® ChipFET™ Dual | 14 Weeks | No SVHC | 6 | EAR99 | 10.4W | NOT SPECIFIED | NOT SPECIFIED | 6A | 30V | 2.2V | 2 N-Channel (Dual) | 765pF @ 15V | 19.2m Ω @ 5A, 10V | 2.2V @ 250μA | 6A Tc | 7.1nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFD5877NLT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-nvmfd5877nlt1g-datasheets-4039.pdf | 8-PowerTDFN | 6.1mm | 1.05mm | 5.1mm | Lead Free | 6 | 13 Weeks | No SVHC | 39MOhm | 8 | ACTIVE, NOT REC (Last Updated: 1 day ago) | yes | EAR99 | No | e3 | Tin (Sn) | Halogen Free | YES | 3.2W | FLAT | 8 | Dual | 23W | 2 | FET General Purpose Power | R-PDSO-F6 | 8.1 ns | 14.5 ns | 17A | 20V | SILICON | DRAIN | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 3V | 6A | 74A | 10.5 mJ | 60V | 2 N-Channel (Dual) | 540pF @ 25V | 39m Ω @ 7.5A, 10V | 3V @ 250μA | 6A | 20nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||
| NTMD6N02R2G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/onsemiconductor-ntmd6n02r2g-datasheets-3840.pdf | 20V | 6A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 45 Weeks | No SVHC | 35MOhm | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | LOGIC LEVEL COMPATIBLE | Tin | No | e3 | YES | 2W | GULL WING | 260 | NTMD6N02 | 8 | Dual | 40 | 2W | 2 | FET General Purpose Power | 12 ns | 50ns | 80 ns | 45 ns | 6.5A | 12V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 730mW | 30A | 360 mJ | 20V | 2 N-Channel (Dual) | 1100pF @ 16V | 900 mV | 35m Ω @ 6A, 4.5V | 1.2V @ 250μA | 3.92A | 20nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||
| SQJB68EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | /files/vishaysiliconix-sqjb68ept1ge3-datasheets-4051.pdf | PowerPAK® SO-8 Dual | 1.267mm | 12 Weeks | 2 | 27W | 175°C | PowerPAK® SO-8 Dual | 9 ns | 15 ns | 11A | 20V | 100V | 27W | 76.5mOhm | 100V | 2 N-Channel (Dual) | 280pF @ 25V | 92mOhm @ 4A, 10V | 2.5V @ 250μA | 11A Tc | 8nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SP8K52FRATB | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | 8-SOIC (0.154, 3.90mm Width) | 8 | 20 Weeks | EAR99 | YES | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 100V | 100V | METAL-OXIDE SEMICONDUCTOR | 2W | 3A | 12A | 0.19Ohm | 2 N-Channel (Dual) | 610pF @ 25V | 170m Ω @ 3A, 10V | 2.5V @ 1mA | 3A Ta | 8.5nC @ 5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDS8858CZ | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-fds8858cz-datasheets-4053.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 18 Weeks | 187mg | No SVHC | 17mOhm | 8 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | 900mW | DUAL | GULL WING | 2W | 2 | Other Transistors | 10ns | 16 ns | 33 ns | 8.6A | 25V | 30V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 1.6V | -60V | N and P-Channel | 1205pF @ 15V | 1.6 V | 17m Ω @ 8.6A, 10V | 3V @ 250μA | 8.6A 7.3A | 24nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||
| NTMD3P03R2G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-nvmd3p03r2g-datasheets-6318.pdf | -30V | -3.05A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 6 Weeks | No SVHC | 85MOhm | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | AVALANCHE RATED | Tin | No | e3 | 2W | GULL WING | NTMD3P03 | 8 | 2W | 2 | Other Transistors | 16 ns | 16ns | 45 ns | 45 ns | -3.05A | 20V | SILICON | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 730mW | 135 pF | -30V | 2 P-Channel (Dual) | 750pF @ 24V | -1.7 V | 85m Ω @ 3.05A, 10V | 2.5V @ 250μA | 2.34A | 25nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||
| IPG20N04S4L11AATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount, Wettable Flank | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipg20n04s4l11aatma1-datasheets-2825.pdf | 8-PowerVDFN | Contains Lead | 6 | 12 Weeks | 8 | yes | LOGIC LEVEL COMPATIBLE | not_compliant | e3 | Tin (Sn) | Halogen Free | 41W | FLAT | NOT SPECIFIED | NOT SPECIFIED | 41W | 2 | R-PDSO-F6 | 20A | 16V | 40V | SILICON | METAL-OXIDE SEMICONDUCTOR | 0.0116Ohm | 2 N-Channel (Dual) | 1990pF @ 25V | 11.6m Ω @ 17A, 10V | 2.2V @ 15μA | 26nC @ 10V | Logic Level Gate |
