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ContactMOSFETs Transistors Arrays(4365)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max |
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| SIA517DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-sia517djt1ge3-datasheets-4425.pdf | PowerPAK® SC-70-6 Dual | 2.05mm | 800μm | 2.05mm | Lead Free | 6 | 14 Weeks | 28.009329mg | Unknown | 6 | yes | EAR99 | e3 | Matte Tin (Sn) | 6.5W | NO LEAD | 260 | SIA517 | 6 | 2 | 40 | 1.9W | 2 | Other Transistors | Not Qualified | 150°C | 30 ns | 25ns | 25 ns | 30 ns | 4.5A | 8V | SILICON | DRAIN | SWITCHING | N-CHANNEL AND P-CHANNEL | 12V | METAL-OXIDE SEMICONDUCTOR | 12V | N and P-Channel | 500pF @ 6V | 400 mV | 29m Ω @ 5A, 4.5V | 1V @ 250μA | 15nC @ 8V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||
| DMP3028LSD-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2013 | /files/diodesincorporated-dmp3028lsd13-datasheets-4447.pdf | 8-SOIC (0.154, 3.90mm Width) | 23 Weeks | EAR99 | e3 | Matte Tin (Sn) | 1.3W | 260 | 30 | Other Transistors | 6A | 30V | METAL-OXIDE SEMICONDUCTOR | 1.3W | 6A | 2 P-Channel (Dual) | 1241pF @ 15V | 25m Ω @ 7A, 10V | 3V @ 250μA | 10.9nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSL308PEH6327XTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-bsl308peh6327xtsa1-datasheets-4500.pdf | SOT-23-6 Thin, TSOT-23-6 | 2.9mm | 1mm | 1.6mm | Lead Free | 6 | 10 Weeks | 6 | yes | Halogen Free | 500mW | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | 5.6 ns | 7.7ns | 2.8 ns | 15.3 ns | 2A | 20V | -30V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 30V | METAL-OXIDE SEMICONDUCTOR | 2A | 0.08Ohm | 18 pF | 2 P-Channel (Dual) | 500pF @ 15V | 80m Ω @ 2A, 10V | 1V @ 11μA | 5nC @ 10V | Logic Level Gate, 4.5V Drive | ||||||||||||||||||||||||||||||||||||||||||||||||
| BSL308CH6327XTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2013 | /files/infineontechnologies-bsl308ch6327xtsa1-datasheets-4459.pdf | SOT-23-6 Thin, TSOT-23-6 | Lead Free | 10 Weeks | 6 | Halogen Free | 500mW | PG-TSOP-6-6 | 275pF | 2A | -30V | 30V | 500mW | 44mOhm | N and P-Channel Complementary | 275pF @ 15V | 57mOhm @ 2.3A, 10V | 2V @ 11μA | 2.3A 2A | 1.5nC @ 10V | Logic Level Gate, 4.5V Drive | 57 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMT3020LFDB-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/diodesincorporated-dmt3020lfdb7-datasheets-4482.pdf | 6-UDFN Exposed Pad | 6 | 23 Weeks | EAR99 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 700mW | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 2 | S-PDSO-N6 | 7.7A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 700mW | 0.02Ohm | 2 N-Channel (Dual) | 393pF @ 15V | 20m Ω @ 9A, 10V | 3V @ 250μA | 7nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| US6M2TR | ROHM Semiconductor | $0.55 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | SMD/SMT | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | 1.5A | 6-SMD, Flat Leads | Lead Free | 6 | 16 Weeks | No SVHC | 340MOhm | 6 | yes | EAR99 | No | e2 | TIN COPPER | 1W | 260 | *M2 | 6 | Dual | 10 | 1W | 2 | Other Transistors | 25 ns | 1A | 12V | 30V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | 30V 20V | METAL-OXIDE SEMICONDUCTOR | 1.5V | -20V | N and P-Channel | 80pF @ 10V | 1.5 V | 240m Ω @ 1.5A, 4.5V | 1.5V @ 1mA | 1.5A 1A | 2.2nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||
| DMC4047LSD-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/diodesincorporated-dmc4047lsd13-datasheets-4583.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.95mm | 1.5mm | 3.95mm | 8 | 23 Weeks | 73.992255mg | 8 | EAR99 | HIGH RELIABILITY | e3 | Matte Tin (Sn) | AEC-Q101 | 1.8W | DUAL | GULL WING | 2 | 2 | 8.7 ns | 19.6ns | 25.5 ns | 34.9 ns | 5.1A | 20V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 1.3W | 7A | 40V | N and P-Channel | 1060pF @ 20V | 24m Ω @ 6A, 10V | 2.4V @ 250μA | 7A 5.1A | 19.1nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||
| NVMFD5C466NLT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2013 | /files/onsemiconductor-nvmfd5c466nlwft1g-datasheets-0963.pdf | 8-PowerTDFN | 48 Weeks | ACTIVE (Last Updated: 3 days ago) | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 40V | 3W Ta 40W Tc | 2 N-Channel (Dual) | 997pF @ 25V | 7.4m Ω @ 10A, 10V | 2.2V @ 30μA | 14A Ta 52A Tc | 7nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AO4800B | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/alphaomegasemiconductor-ao4800b-datasheets-1156.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 16 Weeks | 8 | EAR99 | No | 2W | GULL WING | 8 | 2W | 2 | FET General Purpose Power | 6.9A | 12V | SILICON | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 70 pF | 2 N-Channel (Dual) | 630pF @ 15V | 27m Ω @ 6.9A, 10V | 1.5V @ 250μA | 7nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| QS8K2TR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | 8-SMD, Flat Lead | Lead Free | 8 | 10 Weeks | 8 | yes | EAR99 | No | 1.25W | 260 | *K2 | 8 | 2 | 10 | 2 | 8 ns | 12ns | 13 ns | 29 ns | 3.5A | 12V | SILICON | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 0.077Ohm | 30V | 2 N-Channel (Dual) | 285pF @ 10V | 54m Ω @ 3.5A, 4.5V | 1.5V @ 1mA | 4.6nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| ZXMP6A17DN8TA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/diodesincorporated-zxmp6a17dn8ta-datasheets-4103.pdf | -60V | -3.1A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Contains Lead | 8 | 17 Weeks | 73.992255mg | No SVHC | 125mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 2.15W | GULL WING | 260 | 8 | 2 | Dual | 40 | 2.15W | 2 | Other Transistors | 2.6 ns | 3.4ns | 11.3 ns | 26.2 ns | 3.2A | 20V | SILICON | DRAIN | SWITCHING | 60V | METAL-OXIDE SEMICONDUCTOR | 1.81W | 11.1A | 2 P-Channel (Dual) | 637pF @ 30V | 125m Ω @ 2.3A, 10V | 1V @ 250μA (Min) | 2.7A | 17.7nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||
| ECH8654-TL-H | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/onsemiconductor-ech8654tlh-datasheets-3836.pdf | 8-SMD, Flat Lead | 2.9mm | 900μm | 2.3mm | Lead Free | 8 | 16 Weeks | 8 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e6 | Tin/Bismuth (Sn/Bi) | Halogen Free | YES | 1.5W | ECH8654 | 8 | Dual | 1.5W | 2 | 14 ns | 55ns | 68 ns | 92 ns | 5A | 10V | SILICON | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 5A | 40A | 2 P-Channel (Dual) | 960pF @ 10V | 38m Ω @ 3A, 4.5V | 11nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||
| DMHC4035LSD-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2013 | /files/diodesincorporated-dmhc4035lsd13-datasheets-4175.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.95mm | 1.5mm | 3.95mm | 23 Weeks | 73.992255mg | 8 | EAR99 | e3 | Matte Tin (Sn) | 1.5W | 2 | 3.6 ns | 2.9ns | 15.3 ns | 36.3 ns | 3.7A | 20V | 40V | 2 N and 2 P-Channel (H-Bridge) | 574pF @ 20V | 45m Ω @ 3.9A, 10V | 3V @ 250μA | 4.5A 3.7A | 12.5nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFD4C20NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2013 | /files/onsemiconductor-ntmfd4c20nt1g-datasheets-4111.pdf | 8-PowerTDFN | Lead Free | 24 Weeks | 8 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | Tin | No | e3 | Halogen Free | YES | 1.15W | 8 | Dual | FET General Purpose Power | 13.7A | 20V | 30V | METAL-OXIDE SEMICONDUCTOR | 1.09W 1.15W | 27.4A | 2 N-Channel (Dual) | 970pF @ 15V | 7.3m Ω @ 10A, 10V | 2.1V @ 250μA | 9.1A 13.7A | 9.3nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDS6900AS | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench®, SyncFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/onsemiconductor-fds6900as-datasheets-4198.pdf | 30V | 8.2A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 3.99mm | Lead Free | 8 | 18 Weeks | 187mg | No SVHC | 27MOhm | 8 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | Tin | e3 | 2W | GULL WING | NOT SPECIFIED | Dual | NOT SPECIFIED | 2W | 2 | FET General Purpose Power | Not Qualified | 4ns | 3 ns | 23 ns | 8.2A | 20V | 30V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 1.9V | 900mW | 6.9A | 30V | 2 N-Channel (Dual) | 600pF @ 15V | 1.9 V | 27m Ω @ 6.9A, 10V | 3V @ 250μA | 6.9A 8.2A | 15nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||
| SI7904BDN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7904bdnt1ge3-datasheets-7920.pdf | PowerPAK® 1212-8 Dual | 3.05mm | 1.04mm | 3.05mm | Lead Free | 6 | 14 Weeks | 30mOhm | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | 17.8W | C BEND | 260 | SI7904 | 8 | Dual | 30 | 2.5W | 2 | FET General Purpose Powers | S-XDSO-C6 | 5 ns | 15ns | 5 ns | 25 ns | 6A | 8V | SILICON | DRAIN | AMPLIFIER | 20V | METAL-OXIDE SEMICONDUCTOR | 6A | 2 N-Channel (Dual) | 860pF @ 10V | 30m Ω @ 7.1A, 4.5V | 1V @ 250μA | 24nC @ 8V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||
| FDS6898A | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/onsemiconductor-fds6898a-datasheets-4152.pdf | 20V | 9.4A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.75mm | 4mm | Lead Free | 8 | 10 Weeks | 187mg | No SVHC | 14MOhm | 8 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | Tin | No | e3 | 2W | GULL WING | 2 | Dual | 2W | 2 | FET General Purpose Power | 150°C | 10 ns | 15ns | 16 ns | 34 ns | 9.4A | 12V | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 500mV | 900mW | 20V | 2 N-Channel (Dual) | 1821pF @ 10V | 1 V | 14m Ω @ 9.4A, 4.5V | 1.5V @ 250μA | 23nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||
| SIA906EDJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sia906edjt1ge3-datasheets-4245.pdf | PowerPAK® SC-70-6 Dual | 2.05mm | 850μm | 2.05mm | Lead Free | 6 | 14 Weeks | 28.009329mg | 46mOhm | 6 | yes | EAR99 | Tin | C-07431-DUAL | unknown | e3 | 7.8W | NO LEAD | 260 | 6 | Dual | 40 | 1.9W | 2 | FET General Purpose Power | Not Qualified | 150°C | 5 ns | 12ns | 12 ns | 15 ns | 4.5A | 12V | SILICON | DRAIN | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 20V | 2 N-Channel (Dual) | 350pF @ 10V | 46m Ω @ 3.9A, 4.5V | 1.4V @ 250μA | 12nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||
| US6K1TR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/rohmsemiconductor-us6k1tr-datasheets-4206.pdf | 30V | 1.5A | 6-SMD, Flat Leads | Lead Free | 6 | 16 Weeks | No SVHC | 340MOhm | 6 | yes | EAR99 | No | e2 | Tin/Copper (Sn/Cu) | 1W | 260 | *K1 | 6 | Dual | 10 | 1W | 2 | FET General Purpose Power | 7 ns | 9ns | 6 ns | 15 ns | 1.5A | 12V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 1.5V | 30V | 2 N-Channel (Dual) | 80pF @ 10V | 240m Ω @ 1.5A, 4.5V | 1.5V @ 1mA | 2.2nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||
| ECH8660-TL-H | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2010 | /files/onsemiconductor-ech8660tlh-datasheets-4279.pdf | 8-SMD, Flat Lead | 2.9mm | 900μm | 2.3mm | Lead Free | 33 Weeks | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e6 | Tin/Bismuth (Sn/Bi) | Halogen Free | 1.5W | 8 | Dual | 45 ns | 4.5A | 20V | 30V | N and P-Channel | 240pF @ 10V | 59m Ω @ 2A, 10V | 4.4nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIZ322DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2018 | /files/vishaysiliconix-siz322dtt1ge3-datasheets-4273.pdf | 8-PowerWDFN | 800μm | 14 Weeks | EAR99 | unknown | NOT SPECIFIED | 2 | NOT SPECIFIED | 3.7W | 150°C | 10 ns | 15 ns | 19A | 16.7W Tc | 25V | 2 N-Channel (Dual) | 950pF @ 12.5V | 6.35m Ω @ 15A, 10V | 2.4V @ 250μA | 30A Tc | 20.1nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLHS6376TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-irlhs6376trpbf-datasheets-4321.pdf | 6-VDFN Exposed Pad | Lead Free | 6 | 12 Weeks | No SVHC | 6 | EAR99 | No | e3 | Matte Tin (Sn) | 1.5W | IRLHS6376 | Dual | 1.5W | 2 | FET General Purpose Power | 4.4 ns | 11ns | 9.4 ns | 11 ns | 3.6A | 12V | SILICON | DRAIN | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 800mV | 3.4A | 0.082Ohm | 30V | 2 N-Channel (Dual) | 270pF @ 25V | 800 mV | 63m Ω @ 3.4A, 4.5V | 1.1V @ 10μA | 2.8nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||
| SQ9945BEY-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sq9945beyt1ge3-datasheets-4115.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 12 Weeks | 506.605978mg | Unknown | 64mOhm | 8 | No | 4W | 2 | Dual | 8-SO | 470pF | 6 ns | 2.8ns | 1.7 ns | 17 ns | 5.4A | 20V | 60V | 2V | 4W | 64mOhm | 60V | 2 N-Channel (Dual) | 470pF @ 25V | 64mOhm @ 3.4A, 10V | 2.5V @ 250μA | 5.4A | 12nC @ 10V | Logic Level Gate | 64 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SISB46DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | /files/vishaysiliconix-sisb46dnt1ge3-datasheets-4121.pdf | PowerPAK® 1212-8 Dual | 14 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 40V | 23W | 2 N-Channel (Dual) | 1100pF @ 20V | 11.71m Ω @ 5A, 10V | 2.2V @ 250μA | 34A Tc | 11nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI6562CDQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si6562cdqt1ge3-datasheets-4119.pdf | 8-TSSOP (0.173, 4.40mm Width) | 3mm | 1.2mm | 4.4mm | Lead Free | 8 | 14 Weeks | 157.991892mg | Unknown | 8 | yes | EAR99 | No | e3 | MATTE TIN | 1.7W | DUAL | GULL WING | 260 | SI6562 | 8 | 2 | 30 | 2 | Other Transistors | 150°C | 30 ns | 25ns | 25 ns | 45 ns | 6.1A | 12V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 600mV | 1.6W 1.7W | 6.7A | 20V | N and P-Channel | 850pF @ 10V | 22m Ω @ 5.7A, 4.5V | 1.5V @ 250μA | 6.7A 6.1A | 23nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||
| TSM9926DCS RLG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 3 (168 Hours) | ROHS3 Compliant | 2015 | /files/taiwansemiconductorcorporation-tsm9926dcsrlg-datasheets-3863.pdf | 8-SOIC (0.154, 3.90mm Width) | 20 Weeks | 8-SOP | 20V | 1.6W | 2 N-Channel (Dual) | 562pF @ 8V | 30mOhm @ 6A, 10V | 600mV @ 250μA | 6A Tc | 7.1nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SH8M2TB1 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | ROHS3 Compliant | 2009 | /files/rohmsemiconductor-sh8m2tb1-datasheets-3995.pdf | 8-SOIC (0.154, 3.90mm Width) | 20 Weeks | 8 | 2W | *M2 | 2W | 8-SOP | 140pF | 3.5A | 30V | 2W | 107mOhm | 30V | N and P-Channel | 140pF @ 10V | 83mOhm @ 3.5A, 10V | 2.5V @ 1mA | 3.5A | 3.5nC @ 5V | Standard | 83 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ZXMN3F31DN8TA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/diodesincorporated-zxmn3f31dn8ta-datasheets-3285.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 17 Weeks | 73.992255mg | No SVHC | 24mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.8W | GULL WING | 260 | 8 | 2 | Dual | 40 | 2 | FET General Purpose Power | 2.9 ns | 3.3ns | 8 ns | 16 ns | 7.3A | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 5.7A | 30V | 2 N-Channel (Dual) | 608pF @ 15V | 24m Ω @ 7A, 10V | 3V @ 250μA | 5.7A | 12.9nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||
| SI5922DU-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-si5922dut1ge3-datasheets-3546.pdf | PowerPAK® ChipFET™ Dual | 14 Weeks | No SVHC | 6 | EAR99 | 10.4W | NOT SPECIFIED | NOT SPECIFIED | 6A | 30V | 2.2V | 2 N-Channel (Dual) | 765pF @ 15V | 19.2m Ω @ 5A, 10V | 2.2V @ 250μA | 6A Tc | 7.1nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFD5877NLT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-nvmfd5877nlt1g-datasheets-4039.pdf | 8-PowerTDFN | 6.1mm | 1.05mm | 5.1mm | Lead Free | 6 | 13 Weeks | No SVHC | 39MOhm | 8 | ACTIVE, NOT REC (Last Updated: 1 day ago) | yes | EAR99 | No | e3 | Tin (Sn) | Halogen Free | YES | 3.2W | FLAT | 8 | Dual | 23W | 2 | FET General Purpose Power | R-PDSO-F6 | 8.1 ns | 14.5 ns | 17A | 20V | SILICON | DRAIN | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 3V | 6A | 74A | 10.5 mJ | 60V | 2 N-Channel (Dual) | 540pF @ 25V | 39m Ω @ 7.5A, 10V | 3V @ 250μA | 6A | 20nC @ 10V | Logic Level Gate |
