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ContactMOSFETs Transistors Arrays(4365)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | Number of Functions | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Terminal Pitch | Base Part Number | Pin Count | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | Input Voltage-Nom | Input Voltage (Max) | JEDEC-95 Code | Recovery Time | Control Technique | Switcher Configuration | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Switching Frequency-Max | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max |
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| ZXMN3G32DN8TA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/diodesincorporated-zxmn3g32dn8ta-datasheets-1155.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 17 Weeks | 73.992255mg | No SVHC | 45mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 2.1W | GULL WING | 260 | 8 | 2 | Dual | 40 | 2.1W | 2 | FET General Purpose Power | 2.5 ns | 3.1ns | 9.7 ns | 14 ns | 7.1A | 20V | 30V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 3V | 1.8W | 5.5A | 30V | 2 N-Channel (Dual) | 472pF @ 15V | 3 V | 28m Ω @ 6A, 10V | 3V @ 250μA | 5.5A | 10.5nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||
| ALD110814SCL | Advanced Linear Devices Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | EPAD® | Surface Mount | Surface Mount | 0°C~70°C TJ | Tube | 1 (Unlimited) | ROHS3 Compliant | 2005 | /files/advancedlineardevicesinc-ald110814scl-datasheets-3304.pdf | 16-SOIC (0.154, 3.90mm Width) | 8 Weeks | 16 | yes | unknown | 500mW | 500mW | 10 ns | 3mA | 10.6V | 10V | 4 N-Channel, Matched Pair | 2.5pF @ 5V | 500 Ω @ 5.4V | 1.42V @ 1μA | 12mA 3mA | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FF45MR12W1M1B11BOMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolSiC™+ | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | ROHS3 Compliant | /files/infineontechnologies-ff45mr12w1m1b11boma1-datasheets-3314.pdf | Module | 16 Weeks | 1200V | 20mW Tc | 2 N-Channel (Dual) | 1840pF @ 800V | 45m Ω @ 25A, 15V (Typ) | 5.55V @ 10mA | 25A Tj | 62nC @ 15V | Silicon Carbide (SiC) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CCS020M12CM2 | Cree/Wolfspeed |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Z-Rec® | Chassis Mount | -40°C~150°C TJ | Tray | 1 (Unlimited) | 150°C | RoHS Compliant | 2014 | Module | 19 Weeks | Unknown | 28 | 167W | Module | 20A | 1200V 1.2kV | 2.2V | 167W | 80mOhm | 6 N-Channel (3-Phase Bridge) | 900pF @ 800V | 98mOhm @ 20A, 20V | 2.2V @ 1mA (Typ) | 29.5A Tc | 61.5nC @ 20V | Silicon Carbide (SiC) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSM400D12P2G003 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | -40°C~150°C TJ | 1 (Unlimited) | ROHS3 Compliant | /files/rohmsemiconductor-bsm400d12p2g003-datasheets-3330.pdf | Module | 17 Weeks | NOT SPECIFIED | NOT SPECIFIED | 1200V 1.2kV | 2450W Tc | 2 N-Channel (Half Bridge) | 38000pF @ 10V | 4V @ 85mA | 400A Tc | Silicon Carbide (SiC) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDY2000PZ | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-fdy2000pz-datasheets-3249.pdf | SOT-563, SOT-666 | 1.7mm | 600μm | 1.2mm | Lead Free | 6 | 10 Weeks | 32mg | No SVHC | 6 | ACTIVE (Last Updated: 22 hours ago) | yes | EAR99 | No | e3 | Tin (Sn) | 625mW | FLAT | Dual | 630mW | 2 | Other Transistors | 6 ns | 13ns | 13 ns | 8 ns | 350mA | 8V | SILICON | 20V | METAL-OXIDE SEMICONDUCTOR | -1.03V | 446mW | 0.35A | -20V | 2 P-Channel (Dual) | 100pF @ 10V | 1.2 Ω @ 350mA, 4.5V | 1.5V @ 250μA | 1.4nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||
| APTC60DSKM24T3G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Tray | 1 (Unlimited) | RoHS Compliant | 2012 | /files/microsemicorporation-aptc60dskm24t3g-datasheets-3339.pdf | SP3 | Lead Free | 16 Weeks | 3 | EAR99 | 462W | NOT SPECIFIED | NOT SPECIFIED | 2 | FET General Purpose Power | 95A | 20V | 600V | METAL-OXIDE SEMICONDUCTOR | 2 N Channel (Dual Buck Chopper) | 14400pF @ 25V | 24m Ω @ 47.5A, 10V | 3.9V @ 5mA | 300nC @ 10V | Super Junction | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTM50HM75STG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 1999 | /files/microsemicorporation-aptm50hm75stg-datasheets-3342.pdf | SP4 | 14 | 36 Weeks | 4 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 357W | UPPER | UNSPECIFIED | 14 | 357W | 4 | 18 ns | 35ns | 77 ns | 87 ns | 46A | 30V | SILICON | ISOLATED | SWITCHING | 500V | 500V | METAL-OXIDE SEMICONDUCTOR | 0.09Ohm | 2500 mJ | 4 N-Channel (H-Bridge) | 5600pF @ 25V | 90m Ω @ 23A, 10V | 5V @ 2.5mA | 123nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD86356Q5DT | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 1.05mm | ROHS3 Compliant | 8-PowerTDFN | 6mm | 5mm | 8 | 6 Weeks | yes | not_compliant | 1 | e3 | Matte Tin (Sn) | YES | DUAL | NO LEAD | 260 | 1.27mm | CSD86356 | SWITCHING REGULATOR | NOT SPECIFIED | R-PDSO-N8 | 25V | 12W Ta | 12V | 22V | PULSE WIDTH MODULATION | BUCK | 1500kHz | 2 N-Channel (Half Bridge) | 1.04nF @ 12.5V 2.51nF @ 12.5V | 4.5m Ω @ 20A, 5V, 0.8m Ω @ 20A, 5V | 1.85V @ 250μA, 1.5V @ 250μA | 40A Ta | 7.9nC @ 4.5V, 19.3nC @ 4.5V | Logic Level Gate, 5V Drive | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ1539EH-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sq1539eht1ge3-datasheets-3295.pdf | PowerPAK® SC-70-6 Dual | 6 | 12 Weeks | EAR99 | unknown | AEC-Q101 | YES | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-G6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | N-CHANNEL AND P-CHANNEL | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 1.5W | 0.85A | 0.28Ohm | 10 pF | N and P-Channel | 48pF @ 15V 50pF @ 15V | 280m Ω @ 1A, 10V, 940m Ω @ 500mA, 10V | 2.6V @ 250μA | 850mA Tc | 1.4nC @ 4.5V, 1.6nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRF7103QTR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-auirf7103qtr-datasheets-2890.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 26 Weeks | No SVHC | 8 | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | 2.4W | GULL WING | Dual | 2.4W | 2 | FET General Purpose Power | 5.1 ns | 1.7ns | 2.3 ns | 15 ns | 3A | 20V | SILICON | SWITCHING | 50V | METAL-OXIDE SEMICONDUCTOR | 1V | 3A | 0.13Ohm | 50V | 2 N-Channel (Dual) | 255pF @ 25V | 130m Ω @ 3A, 10V | 3V @ 250μA | 15nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||
| ALD1117PAL | Advanced Linear Devices Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 0°C~70°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/advancedlineardevicesinc-ald1107sbl-datasheets-9190.pdf | 8-DIP (0.300, 7.62mm) | 8 | 8 Weeks | 8 | yes | EAR99 | unknown | 500mW | 500mW | 2 | 2mA | -13.2V | SILICON | COMMON SUBSTRATE, 2 ELEMENTS | SWITCHING | 10.6V | METAL-OXIDE SEMICONDUCTOR | -12V | 2 P-Channel (Dual) Matched Pair | 3pF @ 5V | 1800 Ω @ 5V | 1V @ 1μA | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7910TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/infineontechnologies-irf7910trpbf-datasheets-2765.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Lead Free | 8 | 12 Weeks | 15MOhm | 8 | yes | Tin | No | e3 | 2W | GULL WING | 260 | IRF7910PBF | Single | 30 | 2W | 2 | 9.4 ns | 22ns | 6.3 ns | 16 ns | 10A | 12V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | MS-012AA | 12V | 2 N-Channel (Dual) | 1730pF @ 6V | 15m Ω @ 8A, 4.5V | 2V @ 250μA | 26nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||
| APTM50HM65FT3G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/microsemicorporation-aptm50hm65ft3g-datasheets-3258.pdf | SP3 | Lead Free | 25 | 16 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 390W | UPPER | UNSPECIFIED | 25 | 390W | 4 | R-XUFM-X25 | 21 ns | 38ns | 93 ns | 75 ns | 51A | 30V | SILICON | COMPLEX | ISOLATED | SWITCHING | 500V | 500V | METAL-OXIDE SEMICONDUCTOR | 0.078Ohm | 4 N-Channel (H-Bridge) | 7000pF @ 25V | 78m Ω @ 25.5A, 10V | 5V @ 2.5mA | 140nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD87503Q3ET | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerVDFN | 3.3mm | 3.3mm | 6 | 12 Weeks | 8 | ACTIVE (Last Updated: 4 days ago) | yes | 1mm | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | YES | NO LEAD | 260 | CSD87503 | NOT SPECIFIED | 2 | SILICON | COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 15.6W | 10A | 13.5mOhm | 194 pF | 2 N-Channel (Dual) Common Source | 1020pF @ 15V | 2.1V @ 250μA | 10A Ta | 17.4nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTM100H45STG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 1999 | /files/microsemicorporation-aptm100h45stg-datasheets-3269.pdf | SP4 | 14 | 36 Weeks | 4 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 357W | UPPER | UNSPECIFIED | 14 | 357W | 4 | 10 ns | 12ns | 35 ns | 121 ns | 18A | 30V | SILICON | ISOLATED | SWITCHING | 1000V 1kV | 1000V | METAL-OXIDE SEMICONDUCTOR | 72A | 2500 mJ | 4 N-Channel (H-Bridge) | 4350pF @ 25V | 540m Ω @ 9A, 10V | 5V @ 2.5mA | 154nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ALD310700APCL | Advanced Linear Devices Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | EPAD®, Zero Threshold™ | Through Hole | 0°C~70°C | Tube | 1 (Unlimited) | ROHS3 Compliant | /files/advancedlineardevicesinc-ald310700apcl-datasheets-3176.pdf | 16-DIP (0.300, 7.62mm) | 8 Weeks | 16-PDIP | 8V | 500mW | 4 P-Channel, Matched Pair | 2.5pF @ 5V | 20mV @ 1μA | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF3546MTRPBF | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | Non-RoHS Compliant | 41-PowerVFQFN | 41-PQFN (6x8) | 25V | 4 N-Channel | 1310pF @ 13V | 3.9mOhm @ 27A, 10V | 2.1V @ 35μA | 16A Tc 20A Tc | 15nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ALD114835SCL | Advanced Linear Devices Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | EPAD® | Surface Mount | Surface Mount | 0°C~70°C TJ | Tube | 1 (Unlimited) | 70°C | 0°C | ROHS3 Compliant | 2012 | /files/advancedlineardevicesinc-ald114835scl-datasheets-3184.pdf | 16-SOIC (0.154, 3.90mm Width) | 8 Weeks | 16 | 500mW | 500mW | 16-SOIC | 2.5pF | 10 ns | 3mA | 10.6V | 10.6V | 500mW | 540Ohm | 10V | 4 N-Channel, Matched Pair | 2.5pF @ 5V | 540Ohm @ 0V | 3.45V @ 1μA | 12mA 3mA | Depletion Mode | 540 Ω | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ALD110902SAL | Advanced Linear Devices Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | EPAD® | Surface Mount | Surface Mount | 0°C~70°C TJ | Tube | 1 (Unlimited) | 70°C | 0°C | ROHS3 Compliant | 2005 | /files/advancedlineardevicesinc-ald110902sal-datasheets-3187.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 Weeks | 8 | 500mW | Dual | 500mW | 8-SOIC | 2.5pF | 10 ns | 12mA | 10.6V | 10.6V | 500mW | 500Ohm | 10V | 2 N-Channel (Dual) Matched Pair | 2.5pF @ 5V | 500Ohm @ 4.2V | 220mV @ 1μA | Standard | 500 Ω | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ALD110900APAL | Advanced Linear Devices Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | EPAD®, Zero Threshold™ | Through Hole | Through Hole | 0°C~70°C TJ | Tube | 1 (Unlimited) | 70°C | 0°C | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/advancedlineardevicesinc-ald110900apal-datasheets-3190.pdf | 8-DIP (0.300, 7.62mm) | 8 Weeks | 8 | 500mW | Dual | 500mW | 8-PDIP | 2.5pF | 10 ns | 12mA | 10.6V | 10.6V | 500mW | 500Ohm | 10V | 2 N-Channel (Dual) Matched Pair | 2.5pF @ 5V | 500Ohm @ 4V | 10mV @ 1μA | Standard | 500 Ω | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FD6M033N06 | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Power-SPM™ | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rochesterelectronicsllc-fd6m033n06-datasheets-3193.pdf | EPM15 | 15 | unknown | NO | ZIG-ZAG | 15 | 2 | COMMERCIAL | R-PZIP-T15 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 73A | 0.0033Ohm | 924 mJ | 2 N-Channel (Dual) | 6010pF @ 25V | 3.3m Ω @ 40A, 10V | 4V @ 250μA | 73A | 129nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ALD110800ASCL | Advanced Linear Devices Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | EPAD®, Zero Threshold™ | Surface Mount | Surface Mount | 0°C~70°C TJ | Tube | 1 (Unlimited) | 70°C | 0°C | ROHS3 Compliant | 2005 | /files/advancedlineardevicesinc-ald110900apal-datasheets-3190.pdf | 16-SOIC (0.154, 3.90mm Width) | 8 Weeks | 16 | 500mW | 500mW | 16-SOIC | 2.5pF | 10 ns | 12mA | 10.6V | 10.6V | 500mW | 500Ohm | 10V | 4 N-Channel, Matched Pair | 2.5pF @ 5V | 500Ohm @ 4V | 10mV @ 1μA | Standard | 500 Ω | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ALD210800SCL | Advanced Linear Devices Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | EPAD®, Zero Threshold™ | Surface Mount | Surface Mount | 0°C~70°C TJ | Tube | 1 (Unlimited) | 70°C | 0°C | ROHS3 Compliant | 2014 | /files/advancedlineardevicesinc-ald210800scl-datasheets-3202.pdf | 16-SOIC (0.154, 3.90mm Width) | 8 Weeks | 16 | 500mW | 500mW | 16-SOIC | 15pF | 10 ns | 80mA | 10.6V | 500mW | 25Ohm | 10V | 4 N-Channel, Matched Pair | 15pF @ 5V | 25Ohm | 20mV @ 10μA | 80mA | Logic Level Gate | 25 Ω | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFI4019H-117P | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-irfi4019h117p-datasheets-3206.pdf | TO-220-5 Full Pack | 10.6172mm | 9.02mm | 4.826mm | Lead Free | 5 | 12 Weeks | No SVHC | 95MOhm | 5 | EAR99 | No | 18W | SINGLE | Dual | 18W | 2 | FET General Purpose Power | 7 ns | 6.6ns | 3.1 ns | 13 ns | 8.7A | 20V | SILICON | AMPLIFIER | 150V | METAL-OXIDE SEMICONDUCTOR | 4.9V | 86 ns | 34A | 77 mJ | 150V | 2 N-Channel (Dual) | 810pF @ 25V | 4.9 V | 95m Ω @ 5.2A, 10V | 4.9V @ 50μA | 20nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||
| NTL4502NT1 | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | /files/rochesterelectronicsllc-ntmc1300r2-datasheets-3420.pdf | 16-PowerQFN | 16 | yes | e0 | TIN LEAD | YES | QUAD | NO LEAD | 240 | 16 | 30 | 4 | COMMERCIAL | S-XQCC-N16 | SILICON | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE | DRAIN | SWITCHING | 24V | 24V | METAL-OXIDE SEMICONDUCTOR | 1.7W | 11.4A | 32A | 0.013Ohm | 80 mJ | 4 N-Channel (H-Bridge) | 1605pF @ 20V | 11m Ω @ 15A, 10V | 2V @ 250μA | 11.4A | 13nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ALD110800APCL | Advanced Linear Devices Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | EPAD®, Zero Threshold™ | Through Hole | Through Hole | 0°C~70°C TJ | Tube | 1 (Unlimited) | 70°C | 0°C | ROHS3 Compliant | 2005 | /files/advancedlineardevicesinc-ald110900apal-datasheets-3190.pdf | 16-DIP (0.300, 7.62mm) | 8 Weeks | 16 | 500mW | 500mW | 16-PDIP | 2.5pF | 10 ns | 12mA | 10.6V | 10.6V | 500mW | 500Ohm | 10V | 4 N-Channel, Matched Pair | 2.5pF @ 5V | 500Ohm @ 4V | 10mV @ 1μA | Standard | 500 Ω | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ALD210800APCL | Advanced Linear Devices Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | EPAD®, Zero Threshold™ | Through Hole | Through Hole | 0°C~70°C TJ | Tube | 1 (Unlimited) | 70°C | 0°C | ROHS3 Compliant | 2014 | /files/advancedlineardevicesinc-ald210800scl-datasheets-3202.pdf | 16-DIP (0.300, 7.62mm) | 8 Weeks | 16 | 500mW | 500mW | 16-PDIP | 15pF | 10 ns | 80mA | 10.6V | 500mW | 25Ohm | 10V | 4 N-Channel, Matched Pair | 15pF @ 5V | 25Ohm | 10mV @ 10μA | 80mA | Logic Level Gate | 25 Ω | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA778DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/vishaysiliconix-sia778djt1ge3-datasheets-3238.pdf | PowerPAK® SC-70-6 Dual | 6 | 18 Weeks | 6 | yes | EAR99 | No | 5W | 260 | SIA778 | 6 | 2 | 40 | 1.9W | 2 | FET General Purpose Powers | 1.5A | SILICON | DRAIN | SWITCHING | 12V 20V | METAL-OXIDE SEMICONDUCTOR | 6.5W 5W | 4.5A | 2 N-Channel (Dual) | 500pF @ 6V | 29m Ω @ 5A, 4.5V | 1V @ 250μA | 4.5A 1.5A | 15nC @ 8V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FD6M043N08 | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Power-SPM™ | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rochesterelectronicsllc-fd6m043n08-datasheets-3256.pdf | EPM15 | 15 | unknown | NO | ZIG-ZAG | 15 | 2 | COMMERCIAL | R-PZIP-T15 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 75V | 75V | METAL-OXIDE SEMICONDUCTOR | 65A | 0.0043Ohm | 681 mJ | 2 N-Channel (Dual) | 6180pF @ 25V | 4.3m Ω @ 40A, 10V | 4V @ 250μA | 65A | 148nC @ 10V | Standard |
