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ContactMOSFETs Transistors Arrays(4365)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | Number of Functions | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Terminal Pitch | Base Part Number | Pin Count | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | Input Voltage-Nom | Input Voltage (Max) | JEDEC-95 Code | Switcher Configuration | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Switching Frequency-Max | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max |
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| SM6K2T110 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/rohmsemiconductor-sm6k2t110-datasheets-3520.pdf | 60V | 200mA | SC-74, SOT-457 | 2.9mm | 1.1mm | 1.6mm | Lead Free | 6 | 2.4Ohm | 6 | yes | EAR99 | No | e1 | TIN SILVER COPPER | 300mW | GULL WING | 260 | *K2 | 6 | Dual | 10 | 300mW | 2 | FET General Purpose Power | 6 ns | 5ns | 5 ns | 12 ns | 200mA | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 0.2A | 60V | 2 N-Channel (Dual) | 15pF @ 10V | 2.4 Ω @ 200mA, 10V | 2.5V @ 1mA | 4.4nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||
| SSM6N56FE,LM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2014 | SOT-563, SOT-666 | 12 Weeks | 150mW | ES6 | 55pF | 800mA | 20V | 150mW | 2 N-Channel (Dual) | 55pF @ 10V | 235mOhm @ 800mA, 4.5V | 1V @ 1mA | 800mA | 1nC @ 4.5V | Logic Level Gate, 1.5V Drive | 235 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4210DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2005 | /files/vishaysiliconix-si4210dyt1ge3-datasheets-3574.pdf | 8-SOIC (0.154, 3.90mm Width) | 506.605978mg | Unknown | 8 | 2.7W | SI4210 | 2 | Dual | 1.78W | 2 | 8-SO | 445pF | 12 ns | 55ns | 8 ns | 1 ns | 6.5A | 20V | 30V | 2.5V | 2.7W | 35.5mOhm | 2 N-Channel (Dual) | 445pF @ 15V | 35.5mOhm @ 5A, 10V | 2.5V @ 250μA | 6.5A | 12nC @ 10V | Logic Level Gate | 35.5 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN3032LFDBQ-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmn3032lfdbq7-datasheets-3621.pdf | 6-UDFN Exposed Pad | 6 | 23 Weeks | EAR99 | HIGH RELIABILITY | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | AEC-Q101 | 1W | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 2 | S-PDSO-N6 | 6.2A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 1W | 0.03Ohm | 2 N-Channel (Dual) | 500pF @ 15V | 30m Ω @ 5.8A, 10V | 2V @ 250μA | 10.6nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMG6898LSD-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/diodesincorporated-dmg6898lsdq13-datasheets-7254.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.95mm | 1.5mm | 3.95mm | Lead Free | 8 | 15 Weeks | 73.992255mg | No SVHC | 8 | yes | EAR99 | ESD PROTECTED, HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | 1.28W | GULL WING | 260 | DMG6898LSD | 8 | 40 | 1.28W | 2 | FET General Purpose Power | 11.67 ns | 12.49ns | 12.33 ns | 35.89 ns | 9.5A | 12V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 30A | 0.016Ohm | 2 N-Channel (Dual) | 1149pF @ 10V | 16m Ω @ 9.4A, 4.5V | 1.5V @ 250μA | 26nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||
| ALD310708SCL | Advanced Linear Devices Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | EPAD®, Zero Threshold™ | Surface Mount | 0°C~70°C | Tube | 1 (Unlimited) | ROHS3 Compliant | /files/advancedlineardevicesinc-ald310708scl-datasheets-3649.pdf | 16-SOIC (0.154, 3.90mm Width) | 8 Weeks | yes | unknown | 8V | 500mW | 4 P-Channel, Matched Pair | 2.5pF @ 5V | 780mV @ 1μA | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NDS8947 | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/rochesterelectronicsllc-nds8947-datasheets-3666.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | yes | e3 | MATTE TIN | YES | GULL WING | 260 | 8 | 30 | 2 | COMMERCIAL | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 30V | 900mW | 2 P-Channel (Dual) | 690pF @ 15V | 65m Ω @ 4A, 10V | 2.8V @ 250μA | 4A | 30nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMC3028LSD-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/diodesincorporated-dmc3028lsd13-datasheets-3613.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 17 Weeks | 73.992255mg | No SVHC | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.8W | DUAL | GULL WING | 260 | DMC3028LSD | 8 | 40 | 2.1W | 2 | Other Transistors | 3.5 ns | 4.9ns | 28 ns | 44 ns | 7.4A | 20V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 5.5A | 30V | N and P-Channel | 472pF @ 15V | 28m Ω @ 6A, 10V | 3V @ 250μA | 6.6A 6.8A | 10.5nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||
| US6J11TR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/rohmsemiconductor-us6j11tr-datasheets-3674.pdf | 6-SMD, Flat Leads | Lead Free | 6 | 16 Weeks | 6 | yes | EAR99 | No | e2 | Tin/Copper (Sn/Cu) | 1W | 260 | *J11 | 6 | 10 | 2 | Other Transistors | 8 ns | 10ns | 9 ns | 30 ns | 1.3A | 10V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 12V | 12V | METAL-OXIDE SEMICONDUCTOR | 320mW | 0.0013A | 2 P-Channel (Dual) | 290pF @ 6V | 260m Ω @ 1.3A, 4.5V | 1V @ 1mA | 2.4nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||
| ALD1102SAL | Advanced Linear Devices Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 0°C~70°C TJ | Tube | 1 (Unlimited) | 70°C | 0°C | ROHS3 Compliant | 2003 | /files/advancedlineardevicesinc-ald1102sal-datasheets-3509.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 Weeks | 8 | 500mW | Dual | 500mW | 8-SOIC | 16mA | -13.2V | 10.6V | 500mW | 180Ohm | -12V | 2 P-Channel (Dual) Matched Pair | 10pF @ 5V | 270Ohm @ 5V | 1.2V @ 10μA | Standard | 270 Ω | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIB912DK-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sib912dkt1ge3-datasheets-3512.pdf | PowerPAK® SC-75-6L Dual | 1.6mm | 750μm | 1.6mm | 6 | 14 Weeks | 95.991485mg | Unknown | 6 | yes | EAR99 | No | 3.1W | 260 | SIB912 | 6 | 2 | Dual | 40 | 1.1W | 1 | FET General Purpose Power | 5 ns | 10ns | 10 ns | 24 ns | 1.5A | 8V | SILICON | DRAIN | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 400mV | 20V | 2 N-Channel (Dual) | 95pF @ 10V | 216m Ω @ 1.8A, 4.5V | 1V @ 250μA | 3nC @ 8V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||
| AON3611 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/alphaomegasemiconductor-aon3611-datasheets-0970.pdf | 8-SMD, Flat Lead | 18 Weeks | 8 | 2.5W | Other Transistors | 6A | N-CHANNEL AND P-CHANNEL | 30V | METAL-OXIDE SEMICONDUCTOR | 2.1W 2.5W | 6A | N and P-Channel, Common Drain | 170pF @ 15V | 50m Ω @ 5A, 10V | 2.5V @ 250μA | 5A 6A | 10nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TT8J11TCR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/rohmsemiconductor-tt8j11tcr-datasheets-3431.pdf | 8-SMD, Flat Lead | Lead Free | 8 | 10 Weeks | yes | EAR99 | 650mW | NOT SPECIFIED | 8 | NOT SPECIFIED | 2 | Other Transistors | R-PDSO-F8 | 3.5A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 12V | 12V | METAL-OXIDE SEMICONDUCTOR | 650mW | 12A | 0.043Ohm | 2 P-Channel (Dual) | 2600pF @ 6V | 43m Ω @ 3.5A, 4.5V | 1V @ 1mA | 22nC @ 4.5V | Logic Level Gate, 1.5V Drive | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1024X-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-si1024xt1ge3-datasheets-3402.pdf | SOT-563, SOT-666 | 1.7mm | 600μm | 1.2mm | Lead Free | 6 | 14 Weeks | 8.193012mg | Unknown | 700mOhm | 6 | yes | EAR99 | LOW THRESHOLD | Tin | No | e3 | 250mW | FLAT | 260 | SI1024 | 6 | 1 | Dual | 40 | 250mW | 2 | FET General Purpose Power | 600mA | 6V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 450mV | 0.485A | 20V | 2 N-Channel (Dual) | 700m Ω @ 600mA, 4.5V | 900mV @ 250μA | 485mA | 0.75nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||
| DMN2050LFDB-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/diodesincorporated-dmn2050lfdb7-datasheets-3412.pdf | 6-UDFN Exposed Pad | 6 | 20 Weeks | EAR99 | HIGH RELIABILITY | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | AEC-Q101 | 730mW | 260 | 30 | 2 | FET General Purpose Powers | S-PDSO-N6 | 5 ns | 8ns | 8 ns | 25 ns | 3.3A | 12V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 4.5A | 0.045Ohm | 2 N-Channel (Dual) | 389pF @ 10V | 45m Ω @ 5A, 4.5V | 1V @ 250μA | 12nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||
| CSD86336Q3DT | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | -55°C~125°C | Tape & Reel (TR) | 1 (Unlimited) | 1.05mm | ROHS3 Compliant | 8-PowerTDFN | 3.3mm | 3.3mm | 8 | 8 Weeks | yes | not_compliant | 1 | e3 | Matte Tin (Sn) | YES | DUAL | NO LEAD | 260 | 0.65mm | CSD86336 | SWITCHING REGULATOR | NOT SPECIFIED | S-PDSO-N8 | 25V | 6W | 12V | 22V | BUCK | 1500kHz | 2 N-Channel (Half Bridge) | 494pF @ 12.5V 970pF @ 12.5V | 9.1m Ω @ 20A, 5V, 3.4m Ω @ 20A, 5V | 1.9V @ 250μA, 1.6V @ 250μA | 20A Ta | 3.8nC @ 45V, 7.4nC @ 45V | Logic Level Gate, 5V Drive | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ1563AEH-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | /files/vishaysiliconix-sq1563aeht1ge3-datasheets-3427.pdf | PowerPAK® SC-70-6 Dual | 12 Weeks | PowerPAK® SC-70-6 Dual | 20V | 1.5W | N and P-Channel | 89pF @ 10V 84pF @ 10V | 280mOhm @ 850mA, 4.5V, 575mOhm @ 800mA, 4.5V | 1.5V @ 250μA | 850mA Tc | 1.25nC @ 4.5V, 1.33nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6N24TU,LF | Toshiba Semiconductor and Storage | $0.38 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIII | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | Non-RoHS Compliant | 6-SMD, Flat Leads | 12 Weeks | 30V | 500mW Ta | 2 N-Channel (Dual) | 245pF @ 10V | 145m Ω @ 500mA, 4.5V | 1.1V @ 100μA | 500mA Ta | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTM50AM38STG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | /files/microsemicorporation-aptm50am38stg-datasheets-3455.pdf | SP4 | 10 | 16 Weeks | 4 | yes | EAR99 | AVALANCHE ENERGY RATED | No | e1 | TIN SILVER COPPER | 694W | UPPER | UNSPECIFIED | 10 | 694W | 2 | R-XUFM-X10 | 18 ns | 35ns | 77 ns | 87 ns | 90A | 30V | SILICON | ISOLATED | SWITCHING | 500V | 500V | METAL-OXIDE SEMICONDUCTOR | 360A | 2 N-Channel (Half Bridge) | 11200pF @ 25V | 45m Ω @ 45A, 10V | 5V @ 5mA | 246nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||
| PMDXB550UNEZ | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/nexperiausainc-pmdxb550unez-datasheets-3360.pdf | 6-XFDFN Exposed Pad | 6 | 4 Weeks | IEC-60134 | 285mW | NO LEAD | 6 | 2 | R-PDSO-N6 | 590mA | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 285mW | 0.59A | 0.9Ohm | 2 N-Channel (Dual) | 30.3pF @ 15V | 670m Ω @ 590mA, 4.5V | 950mV @ 250μA | 1.05nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6P35FE(TE85L,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2009 | /files/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | SOT-563, SOT-666 | 12 Weeks | unknown | 150mW | SSM6P35 | 100mA | 20V | 150mW | 2 P-Channel (Dual) | 12.2pF @ 3V | 8 Ω @ 50mA, 4V | 1V @ 1mA | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1023X-T1-GE3 | Vishay Siliconix | $0.29 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishay-si1023xt1ge3-datasheets-0962.pdf | SOT-563, SOT-666 | 1.7mm | 600μm | 1.2mm | Lead Free | 6 | 14 Weeks | 8.193012mg | Unknown | 1.2Ohm | 3 | yes | EAR99 | LOW THRESHOLD | No | e3 | Matte Tin (Sn) | 250mW | FLAT | 260 | SI1023 | 6 | Dual | 40 | 250mW | 2 | Other Transistors | R-PDSO-F6 | -350mA | 6V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | -450mV | -20V | 2 P-Channel (Dual) | 1.2 Ω @ 350mA, 4.5V | 450mV @ 250μA (Min) | 370mA | 1.5nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||
| FDS4935 | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rochesterelectronicsllc-fds4935-datasheets-3468.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | yes | e3 | MATTE TIN | YES | GULL WING | 260 | 8 | NOT SPECIFIED | 2 | COMMERCIAL | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 2W | 7A | 30A | 0.023Ohm | 2 P-Channel (Dual) | 1233pF @ 15V | 23m Ω @ 7A, 10V | 3V @ 250μA | 7A | 21nC @ 5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| UPA2562T1H-T1-AT | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | Non-RoHS Compliant | /files/rochesterelectronicsllc-uda1341tsn1512-datasheets-4273.pdf | 8-SMD, Flat Lead | 8-VSOF | 30V | 2.2W | 2 N-Channel (Dual) | 475pF @ 10V | 55mOhm @ 2A, 4.5V | 1.5V @ 1mA | 4.5A | 5.4nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ALD1103SBL | Advanced Linear Devices Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 0°C~70°C TJ | Tube | 1 (Unlimited) | 70°C | 0°C | ROHS3 Compliant | 2005 | /files/advancedlineardevicesinc-ald1103sbl-datasheets-3485.pdf | 14-SOIC (0.154, 3.90mm Width) | 8 Weeks | 14 | 500mW | 500mW | 14-SOIC | 10pF | 16mA | 13.2V | 10.6V | 500mW | 270Ohm | -12V | 2 N and 2 P-Channel Matched Pair | 10pF @ 5V | 75Ohm @ 5V | 1V @ 10μA | 40mA 16mA | Standard | 75 Ω | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TT8K1TR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/rohmsemiconductor-tt8k1tr-datasheets-3219.pdf | 8-SMD, Flat Lead | Lead Free | 8 | 10 Weeks | yes | EAR99 | e2 | TIN COPPER | 1W | 260 | 8 | 10 | 2 | FET General Purpose Power | Not Qualified | R-PDSO-F8 | 2.5A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 1W | 0.09Ohm | 2 N-Channel (Dual) | 260pF @ 10V | 72m Ω @ 2.5A, 4.5V | 1V @ 1mA | 3.6nC @ 4.5V | Logic Level Gate, 1.5V Drive | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| MCCD2004-TP | Micro Commercial Components (MCC) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2008 | /files/microcommercialco-mccd2004tp-datasheets-3506.pdf | 6-WFDFN Exposed Pad | 12 Weeks | yes | 260 | 10 | 20V | 2 N-Channel (Dual) Common Drain | 1955pF @ 10V | 10m Ω @ 8A, 10V | 1V @ 250μA | 10A | 18.5nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7910TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/infineontechnologies-irf7910trpbf-datasheets-2765.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Lead Free | 8 | 12 Weeks | 15MOhm | 8 | yes | Tin | No | e3 | 2W | GULL WING | 260 | IRF7910PBF | Single | 30 | 2W | 2 | 9.4 ns | 22ns | 6.3 ns | 16 ns | 10A | 12V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | MS-012AA | 12V | 2 N-Channel (Dual) | 1730pF @ 6V | 15m Ω @ 8A, 4.5V | 2V @ 250μA | 26nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||
| DMG9933USD-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/diodesincorporated-dmg9933usd13-datasheets-3310.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 15 Weeks | 73.992255mg | No SVHC | 8 | yes | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | 1.15W | GULL WING | 260 | 8 | 2 | 40 | 2 | Other Transistors | 12.45 ns | 10.29ns | 22.19 ns | 46.52 ns | 4.6A | 12V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 0.075Ohm | -20V | 2 P-Channel (Dual) | 608.4pF @ 6V | 75m Ω @ 4.8A, 4.5V | 1.1V @ 250μA | 6.5nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||
| DMN2028UFDH-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/diodesincorporated-dmn2028ufdh7-datasheets-3275.pdf | 8-PowerVDFN | 3.05mm | 800μm | 3.05mm | 8 | 16 Weeks | No SVHC | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.1W | 260 | 2 | 40 | 2 | FET General Purpose Power | 53 ns | 77ns | 234 ns | 561 ns | 6.8A | 12V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 40A | 0.036Ohm | 20V | 2 N-Channel (Dual) Common Drain | 151pF @ 10V | 20m Ω @ 4A, 10V | 1V @ 250μA | 8.5nC @ 4.5V | Logic Level Gate |
