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ContactMOSFETs Transistors Arrays(4365)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max |
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| SISB46DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | /files/vishaysiliconix-sisb46dnt1ge3-datasheets-4121.pdf | PowerPAK® 1212-8 Dual | 14 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 40V | 23W | 2 N-Channel (Dual) | 1100pF @ 20V | 11.71m Ω @ 5A, 10V | 2.2V @ 250μA | 34A Tc | 11nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI6562CDQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si6562cdqt1ge3-datasheets-4119.pdf | 8-TSSOP (0.173, 4.40mm Width) | 3mm | 1.2mm | 4.4mm | Lead Free | 8 | 14 Weeks | 157.991892mg | Unknown | 8 | yes | EAR99 | No | e3 | MATTE TIN | 1.7W | DUAL | GULL WING | 260 | SI6562 | 8 | 2 | 30 | 2 | Other Transistors | 150°C | 30 ns | 25ns | 25 ns | 45 ns | 6.1A | 12V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 600mV | 1.6W 1.7W | 6.7A | 20V | N and P-Channel | 850pF @ 10V | 22m Ω @ 5.7A, 4.5V | 1.5V @ 250μA | 6.7A 6.1A | 23nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||
| TSM9926DCS RLG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 3 (168 Hours) | ROHS3 Compliant | 2015 | /files/taiwansemiconductorcorporation-tsm9926dcsrlg-datasheets-3863.pdf | 8-SOIC (0.154, 3.90mm Width) | 20 Weeks | 8-SOP | 20V | 1.6W | 2 N-Channel (Dual) | 562pF @ 8V | 30mOhm @ 6A, 10V | 600mV @ 250μA | 6A Tc | 7.1nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SH8M2TB1 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | ROHS3 Compliant | 2009 | /files/rohmsemiconductor-sh8m2tb1-datasheets-3995.pdf | 8-SOIC (0.154, 3.90mm Width) | 20 Weeks | 8 | 2W | *M2 | 2W | 8-SOP | 140pF | 3.5A | 30V | 2W | 107mOhm | 30V | N and P-Channel | 140pF @ 10V | 83mOhm @ 3.5A, 10V | 2.5V @ 1mA | 3.5A | 3.5nC @ 5V | Standard | 83 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ZXMN3F31DN8TA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/diodesincorporated-zxmn3f31dn8ta-datasheets-3285.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 17 Weeks | 73.992255mg | No SVHC | 24mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.8W | GULL WING | 260 | 8 | 2 | Dual | 40 | 2 | FET General Purpose Power | 2.9 ns | 3.3ns | 8 ns | 16 ns | 7.3A | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 5.7A | 30V | 2 N-Channel (Dual) | 608pF @ 15V | 24m Ω @ 7A, 10V | 3V @ 250μA | 5.7A | 12.9nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||
| SI5922DU-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-si5922dut1ge3-datasheets-3546.pdf | PowerPAK® ChipFET™ Dual | 14 Weeks | No SVHC | 6 | EAR99 | 10.4W | NOT SPECIFIED | NOT SPECIFIED | 6A | 30V | 2.2V | 2 N-Channel (Dual) | 765pF @ 15V | 19.2m Ω @ 5A, 10V | 2.2V @ 250μA | 6A Tc | 7.1nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFD5877NLT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-nvmfd5877nlt1g-datasheets-4039.pdf | 8-PowerTDFN | 6.1mm | 1.05mm | 5.1mm | Lead Free | 6 | 13 Weeks | No SVHC | 39MOhm | 8 | ACTIVE, NOT REC (Last Updated: 1 day ago) | yes | EAR99 | No | e3 | Tin (Sn) | Halogen Free | YES | 3.2W | FLAT | 8 | Dual | 23W | 2 | FET General Purpose Power | R-PDSO-F6 | 8.1 ns | 14.5 ns | 17A | 20V | SILICON | DRAIN | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 3V | 6A | 74A | 10.5 mJ | 60V | 2 N-Channel (Dual) | 540pF @ 25V | 39m Ω @ 7.5A, 10V | 3V @ 250μA | 6A | 20nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||
| DMC1018UPD-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2013 | /files/diodesincorporated-dmc1018upd13-datasheets-3828.pdf | 8-PowerTDFN | 17 Weeks | 8 | yes | EAR99 | e3 | Matte Tin (Sn) | 2.3W | NOT SPECIFIED | NOT SPECIFIED | 6.9A | 12V 20V | N and P-Channel | 1525pF @ 6V | 17m Ω @ 11.8A, 4.5V | 1.5V @ 250μA | 9.5A 6.9A | 30.4nC @ 8V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTLUD4C26NTAG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | µCool™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | /files/onsemiconductor-ntlud4c26ntag-datasheets-3849.pdf | 6-UDFN Exposed Pad | Lead Free | 4 Weeks | ACTIVE (Last Updated: 23 hours ago) | yes | e3 | Tin (Sn) | 30V | 2.63W | 2 N-Channel (Dual) | 460pF @ 15V | 21m Ω @ 6A, 10V | 1.1V @ 250μA | 9.1A Ta | 9nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VMM650-01F | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/ixys-vmm65001f-datasheets-1016.pdf | Y3-Li | Lead Free | 9 | 6 | yes | EAR99 | UPPER | UNSPECIFIED | NOT SPECIFIED | VMM | NOT SPECIFIED | 2 | FET General Purpose Power | Not Qualified | R-PUFM-X9 | 250ns | 250 ns | 400 ns | 680A | 20V | SILICON | ISOLATED | SWITCHING | 100V | METAL-OXIDE SEMICONDUCTOR | 0.0018Ohm | 100V | 2 N-Channel (Dual) | 2.2m Ω @ 500A, 10V | 4V @ 30mA | 1440nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||
| FDMA3028N | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/onsemiconductor-fdma3028n-datasheets-3870.pdf | 6-VDFN Exposed Pad | 2mm | 800μm | 2mm | Lead Free | 6 | 16 Weeks | 40mg | 6 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 1.5W | Dual | 1.5W | 2 | FET General Purpose Power | 5.3 ns | 3ns | 2.5 ns | 15 ns | 3.8A | 12V | SILICON | DRAIN | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 700mW | 45 pF | 30V | 2 N-Channel (Dual) | 375pF @ 15V | 68m Ω @ 3.8A, 4.5V | 1.5V @ 250μA | 5.2nC @ 5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||
| SI6954ADQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si6954adqt1e3-datasheets-6320.pdf | 8-TSSOP (0.173, 4.40mm Width) | 3mm | 1mm | 4.4mm | Lead Free | 14 Weeks | 157.991892mg | Unknown | 8 | No | 830mW | SI6954 | 2 | Dual | 830mW | 2 | 8-TSSOP | 12 ns | 10ns | 10 ns | 23 ns | 3.4A | 20V | 30V | 1V | 830mW | 53mOhm | 2 N-Channel (Dual) | 53mOhm @ 3.4A, 10V | 1V @ 250μA (Min) | 3.1A | 16nC @ 10V | Logic Level Gate | 53 mΩ | |||||||||||||||||||||||||||||||||||||||||||||
| DMN6022SSD-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | /files/diodesincorporated-dmn6022ssd13-datasheets-3866.pdf | 8-SOIC (0.154, 3.90mm Width) | 19 Weeks | 60V | 1.2W Ta | 2 N-Channel (Dual) | 2110pF @ 30V | 29m Ω @ 5A, 10V | 3V @ 250μA | 6A Ta 14A Tc | 32nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMD4N03R2G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-ntmd4n03r2g-datasheets-3741.pdf | 30V | 4A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 36 Weeks | 48MOhm | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | Tin | No | e3 | YES | 2W | GULL WING | 260 | NTMD4N03 | 8 | Dual | 40 | 2W | 2 | FET General Purpose Powers | 7 ns | 14ns | 10 ns | 16 ns | 4A | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 4A | 30V | 2 N-Channel (Dual) | 400pF @ 20V | 60m Ω @ 4A, 10V | 3V @ 250μA | 16nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||
| AO4886 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2010 | /files/alphaomegasemiconductor-ao4886-datasheets-1032.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 13 Weeks | 8 | 2W | 2W | 2 | FET General Purpose Power | 3.3A | 20V | 100V | METAL-OXIDE SEMICONDUCTOR | 2 N-Channel (Dual) | 942pF @ 50V | 80m Ω @ 3A, 10V | 2.7V @ 250μA | 20nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDS4897AC | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2006 | /files/onsemiconductor-fds4897ac-datasheets-3927.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9mm | 1.575mm | 3.9mm | Lead Free | 8 | 12 Weeks | 187mg | No SVHC | 26MOhm | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | e3 | Tin (Sn) | 900mW | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2W | 2 | Other Transistors | Not Qualified | 8 ns | 3ns | 3 ns | 17 ns | 5.2A | 20V | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 2V | 6.1A | 40V | N and P-Channel | 1055pF @ 20V | 26m Ω @ 6.1A, 10V | 3V @ 250μA | 6.1A 5.2A | 21nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||
| MTM684110LBF | Panasonic Electronic Components |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/panasonicelectroniccomponents-mtm684110lbf-datasheets-3899.pdf | 8-SMD, Flat Lead | 2.9mm | 780μm | 2.4mm | 8 | 10 Weeks | No SVHC | 8 | EAR99 | unknown | 1W | NOT SPECIFIED | MTM68411 | Dual | NOT SPECIFIED | 1W | 2 | Other Transistors | 9 ns | 11ns | 160 ns | 270 ns | -4.8A | 8V | SILICON | SWITCHING | 12V | 12V | METAL-OXIDE SEMICONDUCTOR | 0.032Ohm | 2 P-Channel (Dual) | 1400pF @ 10V | -650 mV | 32m Ω @ 1A, 5V | 1V @ 1mA | 4.8A | Standard | ||||||||||||||||||||||||||||||||||||||||||||
| NVMFD5C478NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | /files/onsemiconductor-nvmfd5c478nt1g-datasheets-3956.pdf | 8-PowerTDFN | 48 Weeks | ACTIVE (Last Updated: 1 day ago) | yes | e3 | Tin (Sn) | 40V | 3.1W Ta 23W Tc | 2 N-Channel (Dual) | 325pF @ 25V | 17m Ω @ 7.5A, 10V | 3.5V @ 20μA | 9.8A Ta 27A Tc | 6.3nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK7K89-100EX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/nexperiausainc-buk7k89100ex-datasheets-3973.pdf | SOT-1205, 8-LFPAK56 | 6 | 12 Weeks | 8 | AEC-Q101; IEC-60134 | 38W | GULL WING | NOT SPECIFIED | 8 | NOT SPECIFIED | 2 | R-PDSO-G6 | 13A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | METAL-OXIDE SEMICONDUCTOR | 38W | 51A | 19.5 mJ | 2 N-Channel (Dual) | 811pF @ 25V | 82.5m Ω @ 5A, 10V | 4V @ 1mA | 13.6nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| ALD210800ASCL | Advanced Linear Devices Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | EPAD®, Zero Threshold™ | Surface Mount | Surface Mount | 0°C~70°C TJ | Tube | 1 (Unlimited) | 70°C | 0°C | ROHS3 Compliant | 2014 | /files/advancedlineardevicesinc-ald210800scl-datasheets-3202.pdf | 16-SOIC (0.154, 3.90mm Width) | 8 Weeks | 16 | 500mW | 500mW | 16-SOIC | 15pF | 10 ns | 80mA | 10.6V | 500mW | 25Ohm | 10V | 4 N-Channel, Matched Pair | 15pF @ 5V | 25Ohm | 10mV @ 10μA | 80mA | Logic Level Gate | 25 Ω | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4501BDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4501bdyt1ge3-datasheets-3768.pdf | 8-SOIC (0.154, 3.90mm Width) | 14 Weeks | 540.001716mg | No SVHC | 8 | Tin | 4.5W | 2 | Dual | 2 | 8-SOIC | 805pF | 6 ns | 12ns | 9 ns | 35 ns | 12A | 8V | 30V 8V | 800mV | 4.5W 3.1W | 21mOhm | N and P-Channel, Common Drain | 805pF @ 15V | 17mOhm @ 10A, 10V | 2V @ 250μA | 12A 8A | 25nC @ 10V | Logic Level Gate | 17 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||
| US6K4TR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2007 | /files/rohmsemiconductor-us6k4tr-datasheets-3651.pdf | 6-SMD, Flat Leads | Lead Free | 16 Weeks | 6 | No | 1W | *K4 | Dual | 1W | TUMT6 | 110pF | 5 ns | 5ns | 3 ns | 20 ns | 1.5A | 10V | 20V | 1W | 130mOhm | 20V | 2 N-Channel (Dual) | 110pF @ 10V | 180mOhm @ 1.5A, 4.5V | 1V @ 1mA | 1.5A | 2.5nC @ 4.5V | Logic Level Gate | 180 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||
| CMLDM3757 TR PBFREE | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -65°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/centralsemiconductorcorp-cmldm3757trpbfree-datasheets-3705.pdf | SOT-563, SOT-666 | 42 Weeks | YES | Other Transistors | N-CHANNEL AND P-CHANNEL | 0.35W | 20V | METAL-OXIDE SEMICONDUCTOR | 350mW | 0.54A | N and P-Channel | 150pF @ 16V | 550m Ω @ 540mA, 4.5V | 1V @ 250μA | 540mA 430mA | 1.58nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4210DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2005 | /files/vishaysiliconix-si4210dyt1ge3-datasheets-3574.pdf | 8-SOIC (0.154, 3.90mm Width) | 506.605978mg | Unknown | 8 | 2.7W | SI4210 | 2 | Dual | 1.78W | 2 | 8-SO | 445pF | 12 ns | 55ns | 8 ns | 1 ns | 6.5A | 20V | 30V | 2.5V | 2.7W | 35.5mOhm | 2 N-Channel (Dual) | 445pF @ 15V | 35.5mOhm @ 5A, 10V | 2.5V @ 250μA | 6.5A | 12nC @ 10V | Logic Level Gate | 35.5 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||
| DMN3032LFDBQ-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmn3032lfdbq7-datasheets-3621.pdf | 6-UDFN Exposed Pad | 6 | 23 Weeks | EAR99 | HIGH RELIABILITY | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | AEC-Q101 | 1W | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 2 | S-PDSO-N6 | 6.2A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 1W | 0.03Ohm | 2 N-Channel (Dual) | 500pF @ 15V | 30m Ω @ 5.8A, 10V | 2V @ 250μA | 10.6nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||
| DMG6898LSD-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/diodesincorporated-dmg6898lsdq13-datasheets-7254.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.95mm | 1.5mm | 3.95mm | Lead Free | 8 | 15 Weeks | 73.992255mg | No SVHC | 8 | yes | EAR99 | ESD PROTECTED, HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | 1.28W | GULL WING | 260 | DMG6898LSD | 8 | 40 | 1.28W | 2 | FET General Purpose Power | 11.67 ns | 12.49ns | 12.33 ns | 35.89 ns | 9.5A | 12V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 30A | 0.016Ohm | 2 N-Channel (Dual) | 1149pF @ 10V | 16m Ω @ 9.4A, 4.5V | 1.5V @ 250μA | 26nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||
| ALD310708SCL | Advanced Linear Devices Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | EPAD®, Zero Threshold™ | Surface Mount | 0°C~70°C | Tube | 1 (Unlimited) | ROHS3 Compliant | /files/advancedlineardevicesinc-ald310708scl-datasheets-3649.pdf | 16-SOIC (0.154, 3.90mm Width) | 8 Weeks | yes | unknown | 8V | 500mW | 4 P-Channel, Matched Pair | 2.5pF @ 5V | 780mV @ 1μA | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NDS8947 | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/rochesterelectronicsllc-nds8947-datasheets-3666.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | yes | e3 | MATTE TIN | YES | GULL WING | 260 | 8 | 30 | 2 | COMMERCIAL | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 30V | 900mW | 2 P-Channel (Dual) | 690pF @ 15V | 65m Ω @ 4A, 10V | 2.8V @ 250μA | 4A | 30nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMC3028LSD-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/diodesincorporated-dmc3028lsd13-datasheets-3613.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 17 Weeks | 73.992255mg | No SVHC | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.8W | DUAL | GULL WING | 260 | DMC3028LSD | 8 | 40 | 2.1W | 2 | Other Transistors | 3.5 ns | 4.9ns | 28 ns | 44 ns | 7.4A | 20V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 5.5A | 30V | N and P-Channel | 472pF @ 15V | 28m Ω @ 6A, 10V | 3V @ 250μA | 6.6A 6.8A | 10.5nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||
| US6J11TR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/rohmsemiconductor-us6j11tr-datasheets-3674.pdf | 6-SMD, Flat Leads | Lead Free | 6 | 16 Weeks | 6 | yes | EAR99 | No | e2 | Tin/Copper (Sn/Cu) | 1W | 260 | *J11 | 6 | 10 | 2 | Other Transistors | 8 ns | 10ns | 9 ns | 30 ns | 1.3A | 10V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 12V | 12V | METAL-OXIDE SEMICONDUCTOR | 320mW | 0.0013A | 2 P-Channel (Dual) | 290pF @ 6V | 260m Ω @ 1.3A, 4.5V | 1V @ 1mA | 2.4nC @ 4.5V | Logic Level Gate |
