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ContactMOSFETs Transistors Arrays(4365)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max |
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| SQJB68EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | /files/vishaysiliconix-sqjb68ept1ge3-datasheets-4051.pdf | PowerPAK® SO-8 Dual | 1.267mm | 12 Weeks | 2 | 27W | 175°C | PowerPAK® SO-8 Dual | 9 ns | 15 ns | 11A | 20V | 100V | 27W | 76.5mOhm | 100V | 2 N-Channel (Dual) | 280pF @ 25V | 92mOhm @ 4A, 10V | 2.5V @ 250μA | 11A Tc | 8nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SP8K52FRATB | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | 8-SOIC (0.154, 3.90mm Width) | 8 | 20 Weeks | EAR99 | YES | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 100V | 100V | METAL-OXIDE SEMICONDUCTOR | 2W | 3A | 12A | 0.19Ohm | 2 N-Channel (Dual) | 610pF @ 25V | 170m Ω @ 3A, 10V | 2.5V @ 1mA | 3A Ta | 8.5nC @ 5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDS8858CZ | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-fds8858cz-datasheets-4053.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 18 Weeks | 187mg | No SVHC | 17mOhm | 8 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | 900mW | DUAL | GULL WING | 2W | 2 | Other Transistors | 10ns | 16 ns | 33 ns | 8.6A | 25V | 30V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 1.6V | -60V | N and P-Channel | 1205pF @ 15V | 1.6 V | 17m Ω @ 8.6A, 10V | 3V @ 250μA | 8.6A 7.3A | 24nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||
| NTMD3P03R2G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-nvmd3p03r2g-datasheets-6318.pdf | -30V | -3.05A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 6 Weeks | No SVHC | 85MOhm | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | AVALANCHE RATED | Tin | No | e3 | 2W | GULL WING | NTMD3P03 | 8 | 2W | 2 | Other Transistors | 16 ns | 16ns | 45 ns | 45 ns | -3.05A | 20V | SILICON | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 730mW | 135 pF | -30V | 2 P-Channel (Dual) | 750pF @ 24V | -1.7 V | 85m Ω @ 3.05A, 10V | 2.5V @ 250μA | 2.34A | 25nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||
| IPG20N04S4L11AATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount, Wettable Flank | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipg20n04s4l11aatma1-datasheets-2825.pdf | 8-PowerVDFN | Contains Lead | 6 | 12 Weeks | 8 | yes | LOGIC LEVEL COMPATIBLE | not_compliant | e3 | Tin (Sn) | Halogen Free | 41W | FLAT | NOT SPECIFIED | NOT SPECIFIED | 41W | 2 | R-PDSO-F6 | 20A | 16V | 40V | SILICON | METAL-OXIDE SEMICONDUCTOR | 0.0116Ohm | 2 N-Channel (Dual) | 1990pF @ 25V | 11.6m Ω @ 17A, 10V | 2.2V @ 15μA | 26nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ200EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sqj200ept1ge3-datasheets-4098.pdf | PowerPAK® SO-8 Dual | 12 Weeks | EAR99 | unknown | 48W | NOT SPECIFIED | NOT SPECIFIED | 60A | 20V | 27W 48W | 2 N-Channel (Dual) | 975pF @ 10V | 8.8m Ω @ 16A, 10V | 2V @ 250μA | 20A 60A | 18nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ9945BEY-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sq9945beyt1ge3-datasheets-4115.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 12 Weeks | 506.605978mg | Unknown | 64mOhm | 8 | No | 4W | 2 | Dual | 8-SO | 470pF | 6 ns | 2.8ns | 1.7 ns | 17 ns | 5.4A | 20V | 60V | 2V | 4W | 64mOhm | 60V | 2 N-Channel (Dual) | 470pF @ 25V | 64mOhm @ 3.4A, 10V | 2.5V @ 250μA | 5.4A | 12nC @ 10V | Logic Level Gate | 64 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||
| FDS4897AC | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2006 | /files/onsemiconductor-fds4897ac-datasheets-3927.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9mm | 1.575mm | 3.9mm | Lead Free | 8 | 12 Weeks | 187mg | No SVHC | 26MOhm | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | e3 | Tin (Sn) | 900mW | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2W | 2 | Other Transistors | Not Qualified | 8 ns | 3ns | 3 ns | 17 ns | 5.2A | 20V | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 2V | 6.1A | 40V | N and P-Channel | 1055pF @ 20V | 26m Ω @ 6.1A, 10V | 3V @ 250μA | 6.1A 5.2A | 21nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||
| MTM684110LBF | Panasonic Electronic Components |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/panasonicelectroniccomponents-mtm684110lbf-datasheets-3899.pdf | 8-SMD, Flat Lead | 2.9mm | 780μm | 2.4mm | 8 | 10 Weeks | No SVHC | 8 | EAR99 | unknown | 1W | NOT SPECIFIED | MTM68411 | Dual | NOT SPECIFIED | 1W | 2 | Other Transistors | 9 ns | 11ns | 160 ns | 270 ns | -4.8A | 8V | SILICON | SWITCHING | 12V | 12V | METAL-OXIDE SEMICONDUCTOR | 0.032Ohm | 2 P-Channel (Dual) | 1400pF @ 10V | -650 mV | 32m Ω @ 1A, 5V | 1V @ 1mA | 4.8A | Standard | |||||||||||||||||||||||||||||||||||||||||||||||
| NVMFD5C478NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | /files/onsemiconductor-nvmfd5c478nt1g-datasheets-3956.pdf | 8-PowerTDFN | 48 Weeks | ACTIVE (Last Updated: 1 day ago) | yes | e3 | Tin (Sn) | 40V | 3.1W Ta 23W Tc | 2 N-Channel (Dual) | 325pF @ 25V | 17m Ω @ 7.5A, 10V | 3.5V @ 20μA | 9.8A Ta 27A Tc | 6.3nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK7K89-100EX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/nexperiausainc-buk7k89100ex-datasheets-3973.pdf | SOT-1205, 8-LFPAK56 | 6 | 12 Weeks | 8 | AEC-Q101; IEC-60134 | 38W | GULL WING | NOT SPECIFIED | 8 | NOT SPECIFIED | 2 | R-PDSO-G6 | 13A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | METAL-OXIDE SEMICONDUCTOR | 38W | 51A | 19.5 mJ | 2 N-Channel (Dual) | 811pF @ 25V | 82.5m Ω @ 5A, 10V | 4V @ 1mA | 13.6nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ALD210800ASCL | Advanced Linear Devices Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | EPAD®, Zero Threshold™ | Surface Mount | Surface Mount | 0°C~70°C TJ | Tube | 1 (Unlimited) | 70°C | 0°C | ROHS3 Compliant | 2014 | /files/advancedlineardevicesinc-ald210800scl-datasheets-3202.pdf | 16-SOIC (0.154, 3.90mm Width) | 8 Weeks | 16 | 500mW | 500mW | 16-SOIC | 15pF | 10 ns | 80mA | 10.6V | 500mW | 25Ohm | 10V | 4 N-Channel, Matched Pair | 15pF @ 5V | 25Ohm | 10mV @ 10μA | 80mA | Logic Level Gate | 25 Ω | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4501BDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4501bdyt1ge3-datasheets-3768.pdf | 8-SOIC (0.154, 3.90mm Width) | 14 Weeks | 540.001716mg | No SVHC | 8 | Tin | 4.5W | 2 | Dual | 2 | 8-SOIC | 805pF | 6 ns | 12ns | 9 ns | 35 ns | 12A | 8V | 30V 8V | 800mV | 4.5W 3.1W | 21mOhm | N and P-Channel, Common Drain | 805pF @ 15V | 17mOhm @ 10A, 10V | 2V @ 250μA | 12A 8A | 25nC @ 10V | Logic Level Gate | 17 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| US6K4TR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2007 | /files/rohmsemiconductor-us6k4tr-datasheets-3651.pdf | 6-SMD, Flat Leads | Lead Free | 16 Weeks | 6 | No | 1W | *K4 | Dual | 1W | TUMT6 | 110pF | 5 ns | 5ns | 3 ns | 20 ns | 1.5A | 10V | 20V | 1W | 130mOhm | 20V | 2 N-Channel (Dual) | 110pF @ 10V | 180mOhm @ 1.5A, 4.5V | 1V @ 1mA | 1.5A | 2.5nC @ 4.5V | Logic Level Gate | 180 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CMLDM3757 TR PBFREE | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -65°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/centralsemiconductorcorp-cmldm3757trpbfree-datasheets-3705.pdf | SOT-563, SOT-666 | 42 Weeks | YES | Other Transistors | N-CHANNEL AND P-CHANNEL | 0.35W | 20V | METAL-OXIDE SEMICONDUCTOR | 350mW | 0.54A | N and P-Channel | 150pF @ 16V | 550m Ω @ 540mA, 4.5V | 1V @ 250μA | 540mA 430mA | 1.58nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMC1018UPD-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2013 | /files/diodesincorporated-dmc1018upd13-datasheets-3828.pdf | 8-PowerTDFN | 17 Weeks | 8 | yes | EAR99 | e3 | Matte Tin (Sn) | 2.3W | NOT SPECIFIED | NOT SPECIFIED | 6.9A | 12V 20V | N and P-Channel | 1525pF @ 6V | 17m Ω @ 11.8A, 4.5V | 1.5V @ 250μA | 9.5A 6.9A | 30.4nC @ 8V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTLUD4C26NTAG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | µCool™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | /files/onsemiconductor-ntlud4c26ntag-datasheets-3849.pdf | 6-UDFN Exposed Pad | Lead Free | 4 Weeks | ACTIVE (Last Updated: 23 hours ago) | yes | e3 | Tin (Sn) | 30V | 2.63W | 2 N-Channel (Dual) | 460pF @ 15V | 21m Ω @ 6A, 10V | 1.1V @ 250μA | 9.1A Ta | 9nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VMM650-01F | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/ixys-vmm65001f-datasheets-1016.pdf | Y3-Li | Lead Free | 9 | 6 | yes | EAR99 | UPPER | UNSPECIFIED | NOT SPECIFIED | VMM | NOT SPECIFIED | 2 | FET General Purpose Power | Not Qualified | R-PUFM-X9 | 250ns | 250 ns | 400 ns | 680A | 20V | SILICON | ISOLATED | SWITCHING | 100V | METAL-OXIDE SEMICONDUCTOR | 0.0018Ohm | 100V | 2 N-Channel (Dual) | 2.2m Ω @ 500A, 10V | 4V @ 30mA | 1440nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMA3028N | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/onsemiconductor-fdma3028n-datasheets-3870.pdf | 6-VDFN Exposed Pad | 2mm | 800μm | 2mm | Lead Free | 6 | 16 Weeks | 40mg | 6 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 1.5W | Dual | 1.5W | 2 | FET General Purpose Power | 5.3 ns | 3ns | 2.5 ns | 15 ns | 3.8A | 12V | SILICON | DRAIN | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 700mW | 45 pF | 30V | 2 N-Channel (Dual) | 375pF @ 15V | 68m Ω @ 3.8A, 4.5V | 1.5V @ 250μA | 5.2nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||
| SI6954ADQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si6954adqt1e3-datasheets-6320.pdf | 8-TSSOP (0.173, 4.40mm Width) | 3mm | 1mm | 4.4mm | Lead Free | 14 Weeks | 157.991892mg | Unknown | 8 | No | 830mW | SI6954 | 2 | Dual | 830mW | 2 | 8-TSSOP | 12 ns | 10ns | 10 ns | 23 ns | 3.4A | 20V | 30V | 1V | 830mW | 53mOhm | 2 N-Channel (Dual) | 53mOhm @ 3.4A, 10V | 1V @ 250μA (Min) | 3.1A | 16nC @ 10V | Logic Level Gate | 53 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||
| DMN6022SSD-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | /files/diodesincorporated-dmn6022ssd13-datasheets-3866.pdf | 8-SOIC (0.154, 3.90mm Width) | 19 Weeks | 60V | 1.2W Ta | 2 N-Channel (Dual) | 2110pF @ 30V | 29m Ω @ 5A, 10V | 3V @ 250μA | 6A Ta 14A Tc | 32nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMD4N03R2G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-ntmd4n03r2g-datasheets-3741.pdf | 30V | 4A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 36 Weeks | 48MOhm | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | Tin | No | e3 | YES | 2W | GULL WING | 260 | NTMD4N03 | 8 | Dual | 40 | 2W | 2 | FET General Purpose Powers | 7 ns | 14ns | 10 ns | 16 ns | 4A | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 4A | 30V | 2 N-Channel (Dual) | 400pF @ 20V | 60m Ω @ 4A, 10V | 3V @ 250μA | 16nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||
| AO4886 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2010 | /files/alphaomegasemiconductor-ao4886-datasheets-1032.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 13 Weeks | 8 | 2W | 2W | 2 | FET General Purpose Power | 3.3A | 20V | 100V | METAL-OXIDE SEMICONDUCTOR | 2 N-Channel (Dual) | 942pF @ 50V | 80m Ω @ 3A, 10V | 2.7V @ 250μA | 20nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMC3021LSD-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/diodesincorporated-dmc3021lsd13-datasheets-3634.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.95mm | 1.5mm | 3.95mm | 8 | 16 Weeks | 73.992255mg | No SVHC | 8 | yes | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | 2.5W | DUAL | GULL WING | 260 | DMC3021 | 8 | 40 | 2.5W | 2 | Other Transistors | 50.1 ns | 8.5A | 20V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | N and P-Channel | 767pF @ 10V | 21m Ω @ 7A, 10V | 2.1V @ 250μA | 8.5A 7A | 16.1nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||
| ALD110900PAL | Advanced Linear Devices Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | EPAD®, Zero Threshold™ | Through Hole | Through Hole | 0°C~70°C TJ | Tube | 1 (Unlimited) | 70°C | 0°C | ROHS3 Compliant | 2005 | /files/advancedlineardevicesinc-ald110900apal-datasheets-3190.pdf | 8-DIP (0.300, 7.62mm) | 8 Weeks | 8 | 500mW | Dual | 500mW | 8-PDIP | 2.5pF | 10 ns | 12mA | 10.6V | 10.6V | 500mW | 500Ohm | 10V | 2 N-Channel (Dual) Matched Pair | 2.5pF @ 5V | 500Ohm @ 4V | 20mV @ 1μA | Standard | 500 Ω | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIB900EDK-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sib900edkt1ge3-datasheets-3733.pdf | PowerPAK® SC-75-6L Dual | 6 | 6 | yes | EAR99 | ESD PROTECTION | No | 3.1W | 260 | SIB900 | 6 | 40 | 2 | FET General Purpose Powers | 20 ns | 12ns | 12 ns | 70 ns | 1.5A | 6V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | DRAIN | SWITCHING | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 0.225Ohm | 2 N-Channel (Dual) | 225m Ω @ 1.6A, 4.5V | 1V @ 250μA | 1.7nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA913ADJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sia913adjt1ge3-datasheets-3734.pdf | PowerPAK® SC-70-6 Dual | 2.05mm | 750μm | 2.05mm | 6 | 14 Weeks | 28.009329mg | yes | EAR99 | Tin | No | 6.5W | 260 | SIA913 | 3 | 2 | Dual | 40 | 2 | Other Transistors | S-XDSO-N6 | 20 ns | 25ns | 25 ns | 30 ns | 4.3A | 8V | SILICON | SWITCHING | 12V | METAL-OXIDE SEMICONDUCTOR | 4.5A | 0.061Ohm | -12V | 2 P-Channel (Dual) | 590pF @ 6V | 61m Ω @ 3.6A, 4.5V | 1V @ 250μA | 4.5A | 20nC @ 8V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||
| DMN61D8LVT-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmn61d8lvt7-datasheets-1664.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | 17 Weeks | EAR99 | e3 | Matte Tin (Sn) | 820mW | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-G6 | 630mA | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 820mW | 0.63A | 2.4Ohm | 2 N-Channel (Dual) | 12.9pF @ 12V | 1.8 Ω @ 150mA, 5V | 2V @ 1mA | 0.74nC @ 5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMG8822UTS-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/diodesincorporated-dmg8822uts13-datasheets-3570.pdf | 8-TSSOP (0.173, 4.40mm Width) | Lead Free | 8 | 20 Weeks | No SVHC | 8 | yes | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | 870mW | GULL WING | 260 | 8 | 2 | 40 | 2 | FET General Purpose Power | 7.8 ns | 21.1ns | 10.1 ns | 38.6 ns | 4.9A | 8V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 20V | 2 N-Channel (Dual) Common Drain | 841pF @ 10V | 25m Ω @ 8.2A, 4.5V | 900mV @ 250μA | 4.9A Ta | 9.6nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||
| SM6K2T110 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/rohmsemiconductor-sm6k2t110-datasheets-3520.pdf | 60V | 200mA | SC-74, SOT-457 | 2.9mm | 1.1mm | 1.6mm | Lead Free | 6 | 2.4Ohm | 6 | yes | EAR99 | No | e1 | TIN SILVER COPPER | 300mW | GULL WING | 260 | *K2 | 6 | Dual | 10 | 300mW | 2 | FET General Purpose Power | 6 ns | 5ns | 5 ns | 12 ns | 200mA | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 0.2A | 60V | 2 N-Channel (Dual) | 15pF @ 10V | 2.4 Ω @ 200mA, 10V | 2.5V @ 1mA | 4.4nC @ 10V | Logic Level Gate |
