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ContactMOSFETs Transistors Arrays(4365)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | HTS Code | Number of Functions | Max Input Voltage | JESD-609 Code | Terminal Finish | Voltage | Reference Standard | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Terminal Pitch | Base Part Number | Pin Count | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Supply Current-Max (Isup) | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Max Output Current | Max Output Voltage | Min Input Voltage | Output Type | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Number of Outputs | Threshold Voltage | Power - Max | Input Voltage-Nom | Input Voltage (Max) | Recovery Time | Output Current-Max | Output Current per Channel | Control Technique | Switcher Configuration | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Switching Frequency-Max | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max |
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| DN2625DK6-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tray | 3 (168 Hours) | ROHS3 Compliant | 2013 | /files/microchiptechnology-dn2625dk6g-datasheets-5797.pdf | 8-VDFN Exposed Pad | 8 | 16 Weeks | 37.393021mg | 3.5Ohm | EAR99 | LOW THRESHOLD | 11A | e3 | MATTE TIN | 250V | NO LEAD | 260 | 2 | Dual | 40 | 1 | FET General Purpose Power | Not Qualified | R-PDSO-N8 | 10 ns | 20ns | 20 ns | 10 ns | 1.1A | 20V | SILICON | DRAIN | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 2 N-Channel (Dual) | 1000pF @ 25V | 3.5 Ω @ 1A, 0V | 7.04nC @ 1.5V | Depletion Mode | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFD5873NLT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-nvmfd5873nlt1g-datasheets-5808.pdf | 8-PowerTDFN | Lead Free | 6 | 13 Weeks | 8 | ACTIVE, NOT REC (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | AEC-Q101 | Halogen Free | YES | 3.1W | FLAT | 8 | Dual | 3.1W | 2 | FET General Purpose Power | R-PDSO-F6 | 10A | 20V | SILICON | DRAIN | 60V | METAL-OXIDE SEMICONDUCTOR | 190A | 0.013Ohm | 40 mJ | 60V | 2 N-Channel (Dual) | 1560pF @ 25V | 13m Ω @ 15A, 10V | 2.5V @ 250μA | 30.5nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SLA5085 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2001 | /files/sanken-sla5085-datasheets-5811.pdf | 12-SIP | 12 | 12 Weeks | yes | EAR99 | unknown | 8541.29.00.95 | 5W | SINGLE | NOT SPECIFIED | 12 | NOT SPECIFIED | 5 | Not Qualified | R-PSFM-T12 | 10A | SILICON | COMMON SOURCE, 5 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 5W | 0.22Ohm | 30 mJ | 5 N-Channel, Common Source | 320pF @ 10V | 220m Ω @ 3A, 4V | 2V @ 250μA | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ALD1105PBL | Advanced Linear Devices Inc. | $6.33 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 0°C~70°C TJ | Tube | 1 (Unlimited) | 70°C | 0°C | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/advancedlineardevicesinc-ald1105sbl-datasheets-9299.pdf | 14-DIP (0.300, 7.62mm) | 8 Weeks | 14 | 500mW | Dual | 500mW | 14-PDIP | 2mA | 13.2V | 10.6V | 500mW | 1.2kOhm | -12V | 2 N and 2 P-Channel Matched Pair | 3pF @ 5V | 500Ohm @ 5V | 1V @ 1μA | Standard | 500 Ω | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPG20N04S408AATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount, Wettable Flank | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipg20n04s408aatma1-datasheets-5581.pdf | 8-PowerVDFN | Contains Lead | 12 Weeks | 8 | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | 65W | NOT SPECIFIED | NOT SPECIFIED | 20A | 40V | 40V | 2 N-Channel (Dual) | 2940pF @ 25V | 7.6m Ω @ 17A, 10V | 4V @ 30μA | 36nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STS2DNF30L | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-sts2dnf30l-datasheets-5256.pdf | 30V | 3A | 8-SOIC (0.154, 3.90mm Width) | 50.8mm | 6.35mm | 6.35mm | Lead Free | 8 | 4.535924g | No SVHC | 8 | NRND (Last Updated: 7 months ago) | EAR99 | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 2W | GULL WING | 260 | STS2D | 8 | 30 | 2W | 2 | FET General Purpose Power | 19 ns | 20ns | 8 ns | 12 ns | 3A | 18V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 1.7V | 3A | 9A | 0.15Ohm | 30V | 2 N-Channel (Dual) | 121pF @ 25V | 110m Ω @ 1A, 10V | 2.5V @ 250μA | 4.5nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTM50AM24SG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 1999 | /files/microsemicorporation-aptm50am24sg-datasheets-5847.pdf | SP6 | Lead Free | 7 | 16 Weeks | 7 | yes | EAR99 | No | e1 | TIN SILVER COPPER | 1.25kW | UPPER | UNSPECIFIED | 1.25kW | 2 | 10 ns | 17ns | 41 ns | 50 ns | 150A | 30V | SILICON | ISOLATED | SWITCHING | 500V | 500V | METAL-OXIDE SEMICONDUCTOR | 1250W | 600A | 1300 mJ | 2 N-Channel (Half Bridge) | 19600pF @ 25V | 28m Ω @ 75A, 10V | 5V @ 6mA | 434nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ALD1107PBL | Advanced Linear Devices Inc. | $5.14 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 0°C~70°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/advancedlineardevicesinc-ald1107sbl-datasheets-9190.pdf | 14-DIP (0.300, 7.62mm) | 14 | 8 Weeks | 14 | yes | EAR99 | unknown | 500mW | DUAL | 500mW | 4 | 2mA | -13.2V | SILICON | COMMON SUBSTRATE, 4 ELEMENTS | SWITCHING | 10.6V | METAL-OXIDE SEMICONDUCTOR | -12V | 4 P-Channel, Matched Pair | 3pF @ 5V | 1800 Ω @ 5V | 1V @ 1μA | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ALD1117SAL | Advanced Linear Devices Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 0°C~70°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/advancedlineardevicesinc-ald1107sbl-datasheets-9190.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 8 Weeks | 8 | yes | EAR99 | unknown | 500mW | GULL WING | 500mW | 2 | 2mA | -13.2V | SILICON | COMMON SUBSTRATE, 2 ELEMENTS | SWITCHING | 10.6V | METAL-OXIDE SEMICONDUCTOR | -12V | 2 P-Channel (Dual) Matched Pair | 3pF @ 5V | 1800 Ω @ 5V | 1V @ 1μA | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJQ960EL-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | /files/vishaysiliconix-sqjq960elt1ge3-datasheets-5714.pdf | PowerPAK® 8 x 8 Dual | 2.03mm | 14 Weeks | 2 | 71W | 175°C | PowerPAK® 8 x 8 Dual | 10 ns | 22 ns | 63A | 20V | 60V | 71W | 7mOhm | 60V | 2 N-Channel (Dual) | 1950pF @ 25V | 9mOhm @ 10A, 10V | 2.5V @ 250μA | 63A Tc | 24nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ALD1101PAL | Advanced Linear Devices Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 0°C~70°C TJ | Tube | 1 (Unlimited) | 70°C | 0°C | ROHS3 Compliant | 2003 | /files/advancedlineardevicesinc-ald1101asal-datasheets-9948.pdf | 8-DIP (0.300, 7.62mm) | 8 Weeks | 8 | 500mW | Dual | 500mW | 8-PDIP | 40mA | 10.6V | 10.6V | 500mW | 75Ohm | 10.6V | 2 N-Channel (Dual) Matched Pair | 75Ohm @ 5V | 1V @ 10μA | Standard | 75 Ω | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPG20N10S4L22AATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount, Wettable Flank | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipg20n10s4l22aatma1-datasheets-5735.pdf | 8-PowerVDFN | Contains Lead | 6 | 12 Weeks | 8 | yes | EAR99 | not_compliant | AEC-Q101 | Halogen Free | 60W | FLAT | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-F6 | 5 ns | 3ns | 18 ns | 30 ns | 20A | 16V | 100V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | METAL-OXIDE SEMICONDUCTOR | 60W | 0.022Ohm | 130 mJ | 2 N-Channel (Dual) | 1755pF @ 25V | 22m Ω @ 17A, 10V | 2.1V @ 25μA | 27nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFD5C446NLWFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2013 | /files/onsemiconductor-nvmfd5c446nlwft1g-datasheets-5767.pdf | 8-PowerTDFN | 48 Weeks | ACTIVE (Last Updated: 3 days ago) | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 40V | 3.5W Ta | 2 N-Channel (Dual) | 3170pF @ 25V | 2.65m Ω @ 20A, 10V | 2.2V @ 90μA | 25A Ta 145A Tc | 25nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD87334Q3DT | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 1.05mm | ROHS3 Compliant | /files/texasinstruments-csd87334q3dt-datasheets-1496.pdf | 8-PowerTDFN | 3.3mm | 3.3mm | Contains Lead | 8 | 8 Weeks | 8 | ACTIVE (Last Updated: 5 days ago) | yes | 900μm | Gold | not_compliant | 1 | e3 | Matte Tin (Sn) | 6W | NO LEAD | 260 | 0.65mm | CSD87334 | SWITCHING CONTROLLER | NOT SPECIFIED | 20mA | 30V | 12V | 24V | PULSE WIDTH MODULATION | BUCK | 1500kHz | 2 N-Channel (Dual) Asymmetrical | 1260pF @ 15V | 6m Ω @ 12A, 8V | 1.2V @ 250μA | 8.3nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPG20N04S4L08ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-ipg20n04s4l08atma1-datasheets-5551.pdf | 8-PowerVDFN | Contains Lead | 8 | 12 Weeks | 8 | EAR99 | LOGIC LEVEL COMPATIBLE | not_compliant | e3 | Tin (Sn) | Halogen Free | 54W | FLAT | NOT SPECIFIED | NOT SPECIFIED | 2 | 7 ns | 3ns | 20 ns | 40 ns | 20A | 16V | 40V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | METAL-OXIDE SEMICONDUCTOR | 54W | 145 mJ | 2 N-Channel (Dual) | 3050pF @ 25V | 8.2m Ω @ 17A, 10V | 2.2V @ 22μA | 39nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPG20N10S4L35ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2012 | /files/infineontechnologies-ipg20n10s4l35atma1-datasheets-5294.pdf | 8-PowerVDFN | Contains Lead | 12 Weeks | 8 | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | 43W | NOT SPECIFIED | NOT SPECIFIED | 43W | 2 | 3 ns | 2ns | 13 ns | 18 ns | 20A | 16V | 100V | 2 N-Channel (Dual) | 1105pF @ 25V | 35m Ω @ 17A, 10V | 2.1V @ 16μA | 17.4nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI6968BEDQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si6968bedqt1e3-datasheets-5597.pdf | 8-TSSOP (0.173, 4.40mm Width) | 3mm | 1mm | 4.4mm | Lead Free | 8 | 14 Weeks | 157.991892mg | Unknown | 22mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1W | GULL WING | 260 | SI6968 | 8 | 2 | Dual | 40 | 1W | 2 | FET General Purpose Power | 245 ns | 330ns | 510 ns | 860 ns | 5.2A | 12V | SILICON | 20V | METAL-OXIDE SEMICONDUCTOR | 600mV | 20V | 2 N-Channel (Dual) Common Drain | 600 mV | 22m Ω @ 6.5A, 4.5V | 1.6V @ 250μA | 18nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5908DC-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si5908dct1e3-datasheets-5599.pdf | 8-SMD, Flat Lead | 3.05mm | 1.1mm | 1.65mm | 8 | 14 Weeks | 84.99187mg | Unknown | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.1W | C BEND | 260 | SI5908 | 8 | Dual | 40 | 1.1W | 2 | FET General Purpose Powers | 20 ns | 36ns | 36 ns | 30 ns | 5.9A | 8V | SILICON | DRAIN | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 1V | 4.4A | 0.04Ohm | 20V | 2 N-Channel (Dual) | 40m Ω @ 4.4A, 4.5V | 1V @ 250μA | 4.4A | 7.5nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD87381PT | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 5-LGA | 3mm | 480μm | 2.5mm | Lead Free | 5 | 6 Weeks | 5 | ACTIVE (Last Updated: 3 days ago) | yes | 400μm | EAR99 | Gold | 1 | 24V | e4 | 4W | UNSPECIFIED | UNSPECIFIED | 260 | CSD87381 | 2 | SWITCHING REGULATOR | Dual | NOT SPECIFIED | 15A | 1.3V | -800mV | Adjustable | 7.9 ns | 16.3ns | 2.9 ns | 16.8 ns | 15A | 10V | 30V | 1 | 12V | PULSE WIDTH MODULATION | BUCK | 2 N-Channel (Half Bridge) | 564pF @ 15V | 16.3m Ω @ 8A, 8V | 1.9V @ 250μA | 5nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4564DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/vishaysiliconix-si4564dyt1ge3-datasheets-5645.pdf | 8-SOIC (0.154, 3.90mm Width) | 1.75mm | Lead Free | 8 | 14 Weeks | 506.605978mg | Unknown | 21mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 3.2W | DUAL | GULL WING | 260 | SI4564 | 8 | 2 | 40 | 2W | 2 | Other Transistors | 150°C | 42 ns | 40ns | 15 ns | 40 ns | 10A | 20V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | 40V | 40V | METAL-OXIDE SEMICONDUCTOR | 800mV | 3.1W 3.2W | 8A | N and P-Channel | 855pF @ 20V | 800 mV | 17.5m Ω @ 8A, 10V | 2V @ 250μA | 10A 9.2A | 31nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD87381P | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 5-LGA | 3mm | 480μm | 2.5mm | Lead Free | 5 | 6 Weeks | 5 | ACTIVE (Last Updated: 3 days ago) | yes | 400μm | EAR99 | Gold | 1 | e4 | 4W | UNSPECIFIED | UNSPECIFIED | 260 | CSD87381 | SWITCHING REGULATOR | Single | NOT SPECIFIED | 4W | 40A | 16.3ns | 2.9 ns | 16.8 ns | 15A | 8V | 30V | 1 | 12V | 24V | 15A | PULSE WIDTH MODULATION | BUCK | 30V | 2 N-Channel (Half Bridge) | 564pF @ 15V | 16.3m Ω @ 8A, 8V | 1.9V @ 250μA | 5nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4599DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si4599dyt1ge3-datasheets-5317.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 540.001716mg | Unknown | 45mOhm | 8 | EAR99 | Tin | No | e3 | 3.1W | DUAL | GULL WING | 260 | SI4599 | 8 | 2 | 40 | 3W | 2 | 44 ns | 33ns | 13 ns | 30 ns | 6.8A | 20V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 1.4V | 3W 3.1W | 5.6A | 40V | N and P-Channel | 640pF @ 20V | 35.5m Ω @ 5A, 10V | 3V @ 250μA | 6.8A 5.8A | 20nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF9362TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf9362trpbf-datasheets-5058.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Lead Free | 8 | 12 Weeks | No SVHC | 21MOhm | 8 | EAR99 | No | e3 | Matte Tin (Sn) | 2W | GULL WING | IRF9362PBF | Dual | 2W | 2 | Other Transistors | 5.2 ns | 5.9ns | 53 ns | 115 ns | -8A | 20V | SILICON | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | -1.8V | 8A | 64A | 94 mJ | -30V | 2 P-Channel (Dual) | 1300pF @ 25V | -1.8 V | 21m Ω @ 8A, 10V | 2.4V @ 25μA | 8A | 39nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD87333Q3D | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | 125°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 1.05mm | ROHS3 Compliant | 8-PowerTDFN | 3.3mm | 3.3mm | Contains Lead | 8 | 12 Weeks | No SVHC | 8 | ACTIVE (Last Updated: 5 days ago) | yes | 900μm | EAR99 | Gold | not_compliant | 1 | e3 | Matte Tin (Sn) | 6W | NO LEAD | 260 | 0.65mm | CSD87333 | 2 | SWITCHING CONTROLLER | NOT SPECIFIED | 3.9ns | 2.2 ns | 15A | 10V | 30V | 950mV | 12V | 40A | PWM | BUCK-BOOST | 1500kHz | 2 N-Channel (Dual) Asymmetrical | 662pF @ 15V | 14.3m Ω @ 4A, 8V | 1.2V @ 250μA | 4.6nC @ 4.5V | Logic Level Gate, 5V Drive | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDS8958A-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/onsemiconductor-fds8958af085-datasheets-5686.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 5 Weeks | ACTIVE (Last Updated: 4 days ago) | yes | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | Other Transistors | Not Qualified | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | 2W | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 900mW | 7A | 20A | 0.028Ohm | 54 mJ | N and P-Channel | 575pF @ 15V | 28m Ω @ 7A, 10V | 3V @ 250μA | 7A 5A | 16nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDS6990A | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/onsemiconductor-fds6990a-datasheets-5488.pdf | 30V | 7.5A | 8-SOIC (0.154, 3.90mm Width) | 4.9mm | 1.57mm | 3.9mm | Lead Free | 8 | 10 Weeks | 187mg | No SVHC | 18MOhm | 8 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | LOGIC LEVEL COMPATIBLE | Tin | No | e3 | 900mW | GULL WING | Dual | 1.6W | 2 | FET General Purpose Power | 10 ns | 5ns | 5 ns | 28 ns | 7.5A | 20V | 30V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 1.9V | 30V | 2 N-Channel (Dual) | 1235pF @ 15V | 1.9 V | 18m Ω @ 7.5A, 10V | 3V @ 250μA | 17nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ912AEP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-sqj912aept1ge3-datasheets-5421.pdf | PowerPAK® SO-8 Dual | 4 | 12 Weeks | EAR99 | unknown | 48W | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PSSO-G4 | 30A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | 40V | 40V | METAL-OXIDE SEMICONDUCTOR | 48W | 120A | 0.0093Ohm | 34 mJ | 2 N-Channel (Dual) | 1835pF @ 20V | 9.3m Ω @ 9.7A, 10V | 2.5V @ 250μA | 38nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4900DY-T1-E3 | Vishay Siliconix | $0.98 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si4900dyt1e3-datasheets-5430.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | 58mOhm | 8 | EAR99 | Tin | No | e3 | 2W | GULL WING | 260 | SI4900 | 8 | 2 | Dual | 40 | 2W | 2 | 10 ns | 15ns | 10 ns | 20 ns | 5.3A | 20V | SILICON | SWITCHING | 60V | METAL-OXIDE SEMICONDUCTOR | 3.1W | 60V | 2 N-Channel (Dual) | 665pF @ 15V | 58m Ω @ 4.3A, 10V | 3V @ 250μA | 20nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDS89161 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fds89161-datasheets-5481.pdf | 8-SOIC (0.154, 3.90mm Width) | 4mm | 1.5mm | 5mm | Lead Free | 8 | 11 Weeks | 187mg | No SVHC | 8 | ACTIVE (Last Updated: 6 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | 31W | GULL WING | Dual | 3.1W | 2 | FET General Purpose Power | 4.2 ns | 1.3ns | 1.9 ns | 7.3 ns | 2.7A | 20V | SILICON | SWITCHING | 100V | METAL-OXIDE SEMICONDUCTOR | 3V | 1.6W | 0.105Ohm | 5 pF | 100V | 2 N-Channel (Dual) | 210pF @ 50V | 105m Ω @ 2.7A, 10V | 4V @ 250μA | 4.1nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7311TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf7311trpbf-datasheets-5406.pdf | 20V | 6.6A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Lead Free | 8 | 12 Weeks | No SVHC | 29mOhm | 8 | EAR99 | AVALANCHE RATED, ULTRA LOW RESISTANCE | No | e3 | Matte Tin (Sn) | 2W | GULL WING | IRF7311PBF | Dual | 2W | 2 | 8.1 ns | 17ns | 31 ns | 38 ns | 6.6A | 12V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 700mV | 77 ns | 100 mJ | 20V | 2 N-Channel (Dual) | 900pF @ 15V | 29m Ω @ 6A, 4.5V | 700mV @ 250μA | 27nC @ 4.5V | Logic Level Gate |
