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ContactMOSFETs Transistors Arrays(4365)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | Number of Functions | Max Input Voltage | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Supply Voltage-Max (Vsup) | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Supply Current-Max (Isup) | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Max Output Current | Max Output Voltage | Input Characteristics | Interface IC Type | Output Current | Output Type | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Number of Outputs | Threshold Voltage | Power - Max | Input Voltage-Nom | High Side Driver | Efficiency | Switcher Configuration | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Switching Frequency-Max | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Turn On Time-Max (ton) | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max |
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| NTJD5121NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/onsemiconductor-nvjd5121nt1g-datasheets-9702.pdf | 6-TSSOP, SC-88, SOT-363 | 2.2mm | 1mm | 1.35mm | Lead Free | 6 | 16 Weeks | No SVHC | 1.6Ohm | 6 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | LOW THRESHOLD | Tin | No | e3 | YES | 266mW | GULL WING | NTJD5121N | 6 | Dual | 250W | 2 | FET General Purpose Power | 22 ns | 34ns | 32 ns | 34 ns | 295mA | 20V | SILICON | SWITCHING | 60V | METAL-OXIDE SEMICONDUCTOR | 1.7V | 250mW | 60V | 2 N-Channel (Dual) | 26pF @ 20V | 1.7 V | 1.6 Ω @ 500mA, 10V | 2.5V @ 250μA | 0.9nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FF11MR12W1M1B11BOMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolSiC™+ | Chassis Mount | -40°C~150°C TJ | Tray | Not Applicable | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ff11mr12w1m1b11boma1-datasheets-7507.pdf | Module | 12.35mm | 18 | 16 Weeks | EAR99 | AG-EASY1BM-2 | NO | UPPER | UNSPECIFIED | NOT SPECIFIED | 2 | NOT SPECIFIED | 20mW | 2 | R-XUFM-X18 | 25.1 ns | 64.3 ns | 100A | 20V | ISOLATED | SWITCHING | 1200V 1.2kV | METAL-OXIDE SEMICONDUCTOR | 2 N-Channel (Dual) | 7950pF @ 800V | 11m Ω @ 100A, 15V | 5.55V @ 40mA | 250nC @ 15V | Silicon Carbide (SiC) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EPC2104 | EPC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eGaN® | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/epc-epc2104engrt-datasheets-2518.pdf | Die | 14 Weeks | Die | 100V | 2 N-Channel (Half Bridge) | 800pF @ 50V | 6.3mOhm @ 20A, 5V | 2.5V @ 5.5mA | 23A | 7nC @ 5V | GaNFET (Gallium Nitride) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ALD1106SBL | Advanced Linear Devices Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 0°C~70°C TJ | Tube | 1 (Unlimited) | 70°C | 0°C | ROHS3 Compliant | 2012 | /files/advancedlineardevicesinc-ald1106pbl-datasheets-7335.pdf | 14-SOIC (0.154, 3.90mm Width) | 8 Weeks | 14 | 500mW | 500mW | 14-SOIC | 4.8mA | 13.2V | 10.6V | 500mW | 350Ohm | 12V | 4 N-Channel, Matched Pair | 3pF @ 5V | 500Ohm @ 5V | 1V @ 1μA | Standard | 350 Ω | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMQ86530L | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GreenBridge™ PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/onsemiconductor-fdmq86530l-datasheets-7399.pdf | 12-WDFN Exposed Pad | 5mm | 800μm | 4.5mm | Lead Free | 12 | 8 Weeks | 242.3mg | 12 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | 511CR | e4 | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) | 1.9W | DUAL | 1.9W | 4 | 150°C | 8.8 ns | 3.8ns | 2.8 ns | 22 ns | 8A | 20V | SILICON | COMPLEX | DRAIN SOURCE | SWITCHING | 60V | METAL-OXIDE SEMICONDUCTOR | 1.8V | 8A | 50A | 0.0175Ohm | 15 pF | 60V | 4 N-Channel (H-Bridge) | 2295pF @ 30V | 28ns | 17.5m Ω @ 8A, 10V | 3V @ 250μA | 33nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMC2400UV-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/diodesincorporated-dmc2400uv7-datasheets-3020.pdf | SOT-563, SOT-666 | 6 | 16 Weeks | yes | EAR99 | HIGH RELIABILITY | e3 | Matte Tin (Sn) | AEC-Q101 | 450mW | DUAL | FLAT | 6 | 2 | R-PDSO-F6 | 1.03A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | 20V | METAL-OXIDE SEMICONDUCTOR | 20Ohm | N and P-Channel | 37.1pF @ 10V | 480m Ω @ 200mA, 5V | 900mV @ 250μA | 1.03A 700mA | 0.5nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ZXMHC6A07T8TA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/diodesincorporated-zxmhc6a07t8ta-datasheets-7355.pdf | 60V | 1.8A | 8-SMD, Gull Wing | 6.7mm | 1.6mm | 3.7mm | Lead Free | 8 | 17 Weeks | No SVHC | 425mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.7W | DUAL | 260 | ZXMHC6A07T8 | 8 | 4 | 40 | 1.7W | 4 | 2.2A | 1.6 ns | 2.3ns | 5.8 ns | 13 ns | 1.8A | 20V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 3V | 1.3W | 60V | 2 N and 2 P-Channel (H-Bridge) | 166pF @ 40V | 300m Ω @ 1.8A, 10V | 3V @ 250μA | 1.6A 1.3A | 3.2nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NX3020NAKS,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/nexperiausainc-nx3020naks115-datasheets-7656.pdf | 6-TSSOP, SC-88, SOT-363 | Lead Free | 6 | 4 Weeks | 6 | No | e3 | Tin (Sn) | YES | 375mW | GULL WING | 6 | 2 | Dual | 375mW | 2 | 5 ns | 5ns | 17 ns | 34 ns | 180mA | 20V | 30V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 0.18A | 2 N-Channel (Dual) | 13pF @ 10V | 4.5 Ω @ 100mA, 10V | 1.5V @ 250μA | 0.44nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN63D8LV-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/diodesincorporated-dmn63d8lv7-datasheets-7666.pdf | SOT-563, SOT-666 | 1.7mm | 600μm | 1.25mm | Lead Free | 6 | 16 Weeks | No SVHC | 6 | EAR99 | HIGH RELIABILITY | e3 | Matte Tin (Sn) | AEC-Q101 | 450mW | FLAT | 260 | DMN63D8L | Dual | 30 | 450mW | 2 | FET General Purpose Power | 3.3 ns | 3.2ns | 6.3 ns | 12 ns | 260mA | 20V | SILICON | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 1.5V | 4.5Ohm | 30V | 2 N-Channel (Dual) | 22pF @ 25V | 2.8 Ω @ 250mA, 10V | 1.5V @ 250μA | 0.87nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMC3400SDW-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmc3400sdw13-datasheets-7674.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 15 Weeks | 6 | EAR99 | e3 | Matte Tin (Sn) | 310mW | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | 450mA | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 0.4Ohm | N and P-Channel | 55pF @ 15V | 400m Ω @ 590mA, 10V | 1.6V @ 250μA | 650mA 450mA | 1.4nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5948DU-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-si5948dut1ge3-datasheets-6607.pdf | PowerPAK® ChipFET™ Dual | 14 Weeks | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 40V | 7W | 2 N-Channel (Dual) | 165pF @ 20V | 82m Ω @ 5A, 10V | 2.5V @ 250μA | 6A Tc | 2.6nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7942DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si7942dpt1e3-datasheets-7171.pdf | PowerPAK® SO-8 Dual | 4.9mm | 1.04mm | 5.89mm | 6 | 14 Weeks | 506.605978mg | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.4W | C BEND | 260 | SI7942 | 8 | Dual | 40 | 1.4W | 2 | FET General Purpose Powers | R-XDSO-C6 | 15 ns | 15ns | 15 ns | 35 ns | 3.8A | 20V | SILICON | DRAIN | SWITCHING | 100V | 100V | METAL-OXIDE SEMICONDUCTOR | 0.049Ohm | 2 N-Channel (Dual) | 49m Ω @ 5.9A, 10V | 4V @ 250μA | 24nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMC89521L | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/onsemiconductor-fdmc89521l-datasheets-7121.pdf | 8-PowerWDFN | 3mm | 800μm | 3mm | Lead Free | 8 | 6 Weeks | 196mg | 17MOhm | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | AVALANCHE ENERGY RATED | No | e4 | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) | 800mW | 2 | Dual | 1.9W | 2 | 150°C | S-PDSO-N4 | 7.9 ns | 2.1ns | 1.7 ns | 18 ns | 8.2A | 20V | SILICON | DRAIN | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 1.9W Ta 16W Tc | 15 pF | 60V | 2 N-Channel (Dual) | 1635pF @ 30V | 17m Ω @ 8.2A, 10V | 3V @ 250μA | 8.2A Ta | 24nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6P49NU,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2014 | 6-WDFN Exposed Pad | 16 Weeks | 6 | unknown | 1W | 1W | 2 | 4A | 12V | 20V | -20V | 2 P-Channel (Dual) | 480pF @ 10V | 45m Ω @ 3.5A, 10V | 1.2V @ 1mA | 6.74nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD87353Q5D | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ROHS3 Compliant | /files/texasinstruments-csd87353q5d-datasheets-1781.pdf | 8-PowerLDFN | 5mm | 1.5mm | 6mm | Contains Lead | 8 | 12 Weeks | 8 | ACTIVE (Last Updated: 1 day ago) | yes | 1.5mm | EAR99 | No | 1 | 27V | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 12W | 260 | CSD87353 | 8 | SWITCHING CONTROLLER | Dual | 12W | 25A | 1V | Adjustable | 10ns | 4.6 ns | 23 ns | 40A | 1.15V | 30V | 1 | 12V | 95 % | PUSH-PULL | 30V | 2 N-Channel (Half Bridge) | 3190pF @ 15V | 2.1V @ 250μA | 19nC @ 4.5V | Logic Level Gate | 3.4 Ω | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7938DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si7938dpt1ge3-datasheets-6952.pdf | PowerPAK® SO-8 Dual | 1.17mm | Lead Free | 6 | 14 Weeks | 506.605978mg | No SVHC | 8 | yes | EAR99 | S17-0173-DUAL | unknown | e3 | Matte Tin (Sn) | 46W | C BEND | 260 | SI7938 | 8 | 2 | Dual | 40 | 3.5W | 2 | FET General Purpose Power | Not Qualified | 150°C | R-XDSO-C6 | 11 ns | 19ns | 15 ns | 33 ns | 60A | 20V | SILICON | DRAIN | SWITCHING | 40V | METAL-OXIDE SEMICONDUCTOR | 2.5V | 40V | 2 N-Channel (Dual) | 2300pF @ 20V | 2.5 V | 5.8m Ω @ 18.5A, 10V | 2.5V @ 250μA | 65nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD86330Q3D | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 8-PowerLDFN | 3.3mm | 1.5mm | 3.3mm | Contains Lead | 8 | 6 Weeks | No SVHC | 8 | ACTIVE (Last Updated: 4 days ago) | yes | 1.5mm | EAR99 | Tin | No | 1 | e3 | 6W | 260 | 12V | 0.65mm | CSD86330 | 8 | 22V | Dual | 6W | STANDARD | BUFFER OR INVERTER BASED MOSFET DRIVER | 5.3 ns | 15.8 ns | 20A | 8V | 25V | 1.4V | NO | 25V | 2 N-Channel (Half Bridge) | 920pF @ 12.5V | 1.4 V | 9.6m Ω @ 14A, 8V | 2.1V @ 250μA | 6.2nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD86360Q5D | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/texasinstruments-csd86360q5d-datasheets-1796.pdf | 8-PowerLDFN | 5mm | 1.5mm | 6mm | Contains Lead | 8 | 6 Weeks | No SVHC | 8 | ACTIVE (Last Updated: 2 days ago) | yes | 1.5mm | EAR99 | Gold | not_compliant | 1 | e3 | Matte Tin (Sn) | 13W | DUAL | NO LEAD | 260 | CSD86360 | 2 | SWITCHING REGULATOR | NOT SPECIFIED | 50mA | 9.5 ns | 14.8ns | 6.6 ns | 29.3 ns | 50A | 10V | 25V | 12V | BUCK | 3.7mOhm | 1500kHz | 25V | 2 N-Channel (Half Bridge) | 2060pF @ 12.5 | 2.1V @ 250μA | 12.6nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TC8220K6-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 2 (1 Year) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/microchiptechnology-tc8220k6g-datasheets-7288.pdf | 12-VFDFN Exposed Pad | 12 | 3 Weeks | 12 | EAR99 | LOGIC LEVEL COMPATIBLE, LOW THRESHOLD | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | NO LEAD | 260 | 40 | 4 | Not Qualified | SILICON | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | SWITCHING | N-CHANNEL AND P-CHANNEL | 200V | 200V | METAL-OXIDE SEMICONDUCTOR | 7Ohm | 2 N and 2 P-Channel | 56pF @ 25V | 6 Ω @ 1A, 10V | 2.4V @ 1mA | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ALD1106PBL | Advanced Linear Devices Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 0°C~70°C TJ | Tube | 1 (Unlimited) | 70°C | 0°C | ROHS3 Compliant | 2012 | /files/advancedlineardevicesinc-ald1106pbl-datasheets-7335.pdf | 14-DIP (0.300, 7.62mm) | 8 Weeks | 14 | 500mW | 500mW | 14-PDIP | 4.8mA | 13.2V | 10.6V | 500mW | 350Ohm | 12V | 4 N-Channel, Matched Pair | 3pF @ 5V | 500Ohm @ 5V | 1V @ 1μA | Standard | 350 Ω | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ZXMP6A18DN8TA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/diodesincorporated-zxmp6a18dn8ta-datasheets-7046.pdf | -60V | -4.6A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.7mm | 4mm | Lead Free | 8 | 17 Weeks | 73.992255mg | No SVHC | 55mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 2.1W | GULL WING | 260 | 8 | 2 | Dual | 40 | 2.1W | 2 | Other Transistors | 150°C | 4.6 ns | 5.8ns | 23 ns | 55 ns | -4.8A | 20V | SILICON | SWITCHING | 60V | METAL-OXIDE SEMICONDUCTOR | -1V | 1.8W | 3.7A | -60V | 2 P-Channel (Dual) | 1580pF @ 30V | 55m Ω @ 3.5A, 10V | 1V @ 250μA (Min) | 3.7A | 44nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7252DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/vishaysiliconix-si7252dpt1ge3-datasheets-7360.pdf | PowerPAK® SO-8 Dual | 1.12mm | 6 | 14 Weeks | 506.605978mg | No SVHC | 8 | EAR99 | No | e3 | Matte Tin (Sn) | 46W | C BEND | SI7252 | Dual | 3.5W | 2 | 150°C | R-PDSO-C6 | 12 ns | 12ns | 7 ns | 18 ns | 36.7A | 20V | SILICON | DRAIN | SWITCHING | 100V | METAL-OXIDE SEMICONDUCTOR | 1.5V | 0.017Ohm | 100V | 2 N-Channel (Dual) | 1170pF @ 50V | 18m Ω @ 15A, 10V | 3.5V @ 250μA | 27nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMS3602S | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-fdms3602s-datasheets-7375.pdf | 8-PowerTDFN | 5mm | 1.05mm | 6mm | Lead Free | 6 | 13 Weeks | 90mg | No SVHC | 5.6MOhm | 8 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | 1W | 2.5W | 2 | FET General Purpose Power | R-PDSO-N6 | 4.2ns | 3.2 ns | 31 ns | 26A | 20V | SILICON | DRAIN SOURCE | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 15A | 40A | 50 mJ | 25V | 2 N-Channel (Dual) | 1680pF @ 13V | 1.8 V | 5.6m Ω @ 15A, 10V | 3V @ 250μA | 15A 26A | 27nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7942DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si7942dpt1e3-datasheets-7171.pdf | PowerPAK® SO-8 Dual | 4.9mm | 1.04mm | 5.89mm | Lead Free | 6 | 14 Weeks | 506.605978mg | Unknown | 49mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.4W | C BEND | 260 | SI7942 | 8 | 2 | Dual | 40 | 1.4W | 2 | FET General Purpose Powers | R-XDSO-C6 | 15 ns | 15ns | 20 ns | 35 ns | 5.9A | 20V | 100V | SILICON | DRAIN | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 100V | 2 N-Channel (Dual) | 4 V | 49m Ω @ 5.9A, 10V | 4V @ 250μA | 3.8A | 24nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7234DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si7234dpt1ge3-datasheets-7285.pdf | PowerPAK® SO-8 Dual | 4.9mm | 1.04mm | 5.89mm | Lead Free | 6 | 14 Weeks | 506.605978mg | 3.4mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 46W | C BEND | 260 | SI7234 | 8 | 2 | 30 | 3.5W | 2 | FET General Purpose Powers | R-XDSO-C6 | 30 ns | 15ns | 25 ns | 90 ns | 60A | 12V | SILICON | DRAIN | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 46W | 2 N-Channel (Dual) | 5000pF @ 6V | 3.4m Ω @ 20A, 4.5V | 1.5V @ 250μA | 120nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TC6320TG-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/microchiptechnology-tc6320k6g-datasheets-1076.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9mm | 1.65mm | 3.9mm | 8 | 6 Weeks | 84.99187mg | No SVHC | 8 | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | TC6320 | 2 | 40 | 2 | Other Transistors | 10 ns | 15ns | 15 ns | 20 ns | -2A | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 2V | 7Ohm | 200V | N and P-Channel | 110pF @ 25V | 7 Ω @ 1A, 10V | 2V @ 1mA | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7288DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si7288dpt1ge3-datasheets-6861.pdf | PowerPAK® SO-8 Dual | Lead Free | 6 | 14 Weeks | Unknown | 19mOhm | 8 | yes | EAR99 | Tin | No | PowerPAKSO-8 | e3 | 15.6W | C BEND | 260 | SI7288 | 8 | 2 | Dual | 40 | 3.6W | 2 | FET General Purpose Powers | R-XDSO-C6 | 12 ns | 14ns | 10 ns | 16 ns | 20A | 20V | SILICON | DRAIN | SWITCHING | 40V | METAL-OXIDE SEMICONDUCTOR | 2.8V | 10A | 50A | 5 mJ | 40V | 2 N-Channel (Dual) | 565pF @ 20V | 1.2 V | 19m Ω @ 10A, 10V | 2.8V @ 250μA | 15nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD87330Q3D | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ROHS3 Compliant | 8-PowerLDFN | 3.3mm | 1.5mm | 3.3mm | Contains Lead | 8 | 12 Weeks | No SVHC | 8 | ACTIVE (Last Updated: 1 day ago) | yes | 1.5mm | EAR99 | Gold | No | 1 | 27V | e3 | Matte Tin (Sn) | 6W | 260 | 0.65mm | CSD87330 | 8 | SWITCHING CONTROLLER | Dual | 6W | 20mA | 15A | 1.2V | Adjustable | 7.5ns | 1.6 ns | 9.1 ns | 20A | 1.15V | 30V | 1 | 1V | 12V | 90 % | PUSH-PULL | 30V | 2 N-Channel (Half Bridge) | 900pF @ 15V | 2.1V @ 250μA | 5.8nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7351TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-irf7351trpbf-datasheets-6966.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Lead Free | 8 | 12 Weeks | 8 | EAR99 | No | e3 | Matte Tin (Sn) | 2W | GULL WING | IRF7351PBF | Dual | 2W | 2 | FET General Purpose Power | 5.1 ns | 5.9ns | 6.7 ns | 17 ns | 8A | 20V | SILICON | SWITCHING | 60V | METAL-OXIDE SEMICONDUCTOR | 8A | 64A | 60V | 2 N-Channel (Dual) | 1330pF @ 30V | 17.8m Ω @ 8A, 10V | 4V @ 50μA | 36nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EPC2106 | EPC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eGaN® | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/epc-epc2106engrt-datasheets-9551.pdf | Die | 14 Weeks | Die | 100V | 2 N-Channel (Half Bridge) | 75pF @ 50V | 70mOhm @ 2A, 5V | 2.5V @ 600μA | 1.7A | 0.73nC @ 5V | GaNFET (Gallium Nitride) |
