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ContactMOSFETs Transistors Arrays(4365)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | Number of Functions | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Base Part Number | Pin Count | Supply Voltage-Max (Vsup) | Supply Voltage-Min (Vsup) | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | Reverse Voltage | Output Current-Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max |
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| DMC2004LPK-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -65°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/diodesincorporated-dmc2004lpk7-datasheets-6208.pdf | 6-SMD, No Lead | 1.6mm | 480μm | 1.2mm | 6 | 16 Weeks | 21.092045mg | No SVHC | 6 | yes | EAR99 | HIGH RELIABILITY | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 500mW | BOTTOM | 260 | 6 | 40 | 500mW | 2 | Other Transistors | 600mA | 8V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 0.75A | 0.55Ohm | 20V | N and P-Channel | 150pF @ 16V | 550m Ω @ 540mA, 4.5V | 1V @ 250μA | 750mA 600mA | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4816BDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si4816bdyt1e3-datasheets-1915.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.75mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | No SVHC | 18.5mOhm | 8 | EAR99 | Tin | No | e3 | 1.25W | DUAL | GULL WING | 260 | SI4816 | 8 | 2 | 30 | 2 | 150°C | 13 ns | 9ns | 9 ns | 31 ns | 5.8A | 20V | SILICON | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 3V | 1W 1.25W | 2 N-Channel (Half Bridge) | 18.5m Ω @ 6.8A, 10V | 3V @ 250μA | 5.8A 8.2A | 10nC @ 5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||
| DMP58D0SV-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/diodesincorporated-dmp58d0sv7-datasheets-6215.pdf | SOT-563, SOT-666 | 1.6mm | 600μm | 1.2mm | Lead Free | 6 | 19 Weeks | 3.005049mg | No SVHC | 8Ohm | 6 | yes | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | 400mW | FLAT | 260 | 6 | Dual | 40 | 400mW | 2 | Other Transistors | 160mA | 20V | SILICON | SWITCHING | 50V | 50V | METAL-OXIDE SEMICONDUCTOR | 2 P-Channel (Dual) | 27pF @ 25V | 8 Ω @ 100mA, 5V | 2.1V @ 250μA | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ963EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TA | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | /files/vishaysiliconix-sqj963ept1ge3-datasheets-5777.pdf | PowerPAK® SO-8 Dual | 12 Weeks | 8 | No | 27W | 2 | Dual | 27W | 2 | PowerPAK® SO-8 Dual | 11 ns | 13ns | 8 ns | 36 ns | 8A | 20V | 60V | 27W Tc | 115mOhm | 2 P-Channel (Dual) | 1140pF @ 30V | 85mOhm @ 3.5A, 10V | 2.5V @ 250μA | 8A Tc | 40nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FC6546010R | Panasonic Electronic Components |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/panasonicelectroniccomponents-fc6546010r-datasheets-6053.pdf | 6-SMD, Flat Leads | 2mm | 600μm | 1.25mm | 6 | 10 Weeks | No SVHC | 6 | EAR99 | unknown | 8541.21.00.95 | 150mW | NOT SPECIFIED | FC654601 | Dual | NOT SPECIFIED | 2 | FET General Purpose Power | 100 ns | 100 ns | 100mA | 12V | SILICON | SWITCHING | 60V | METAL-OXIDE SEMICONDUCTOR | 1.2V | 0.1A | 15Ohm | 60V | 2 N-Channel (Dual) | 12pF @ 3V | 1.2 V | 12 Ω @ 10mA, 4V | 1.5V @ 1μA | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N7002VA | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/onsemiconductor-2n7002v-datasheets-1455.pdf | SOT-563, SOT-666 | 6 | 4 Weeks | 32mg | 6 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | Tin | No | e3 | 250mW | FLAT | Dual | 250mW | 2 | FET General Purpose Power | 5.85 ns | 12.5 ns | 280mA | 20V | SILICON | SWITCHING | 60V | METAL-OXIDE SEMICONDUCTOR | 7 pF | 60V | 2 N-Channel (Dual) | 50pF @ 25V | 7.5 Ω @ 50mA, 5V | 2.5V @ 250μA | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD88584Q5DCT | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 22-PowerTFDFN | 6mm | 5mm | 22 | 8 Weeks | 22 | ACTIVE (Last Updated: 2 days ago) | yes | 850μm | not_compliant | 1 | e3 | Matte Tin (Sn) | YES | DUAL | NO LEAD | 260 | 10V | CSD88584 | 16V | 4.5V | BRUSHLESS DC MOTOR CONTROLLER | NOT SPECIFIED | 40V | 12W | 50A | 2 N-Channel (Half Bridge) | 12400pF @ 20V | 0.95m Ω @ 30A, 10V | 2.3V @ 250μA | 88nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMDT670UPE,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/nexperiausainc-pmdt670upe115-datasheets-6056.pdf | SOT-563, SOT-666 | Lead Free | 6 | 4 Weeks | 6 | No | e3 | Tin (Sn) | YES | 330mW | FLAT | 6 | 390mW | 2 | 18 ns | 30ns | 72 ns | 80 ns | 550mA | 8V | -20V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 0.55A | 0.85Ohm | 2 P-Channel (Dual) | 87pF @ 10V | 850m Ω @ 400mA, 4.5V | 1.3V @ 250μA | 1.14nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN32D4SDW-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmn32d4sdw7-datasheets-5926.pdf | 6-TSSOP, SC-88, SOT-363 | 16 Weeks | EAR99 | e3 | Matte Tin (Sn) | 290mW | 260 | 30 | 650mA | 30V | 290mW | 2 N-Channel (Dual) | 50pF @ 15V | 400m Ω @ 250mA, 10V | 1.6V @ 250μA | 1.3nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CAS325M12HM2 | Cree/Wolfspeed |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Z-REC™ | 175°C TJ | Bulk | Not Applicable | RoHS Compliant | 2016 | Module | 19 Weeks | Module | 1200V 1.2kV | 3000W | 3.7mOhm | 2 N-Channel (Half Bridge) | 4.3mOhm @ 400A, 20V | 4V @ 105mA | 444A Tc | 1127nC @ 20V | Silicon Carbide (SiC) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CAB450M12XM3 | Cree/Wolfspeed | $690.31 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | -40°C~175°C TJ | Box | 1 (Unlimited) | Module | 8 Weeks | Module | 1200V | 850W | 2 N-Channel (Half Bridge) | 38000pF @ 800V | 3.7mOhm @ 450A, 15V | 3.6V @ 132mA | 450A | 1330nC @ 15V | Silicon Carbide (SiC) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMG6301UDW-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2013 | /files/diodesincorporated-dmg6301udw7-datasheets-5939.pdf | 6-TSSOP, SC-88, SOT-363 | 15 Weeks | 6.010099mg | EAR99 | e3 | Matte Tin (Sn) | 300mW | 260 | DMG6301 | 2 | Dual | 30 | 2.9 ns | 1.8ns | 2.3 ns | 6.6 ns | 240mA | 8V | 25V | 2 N-Channel (Dual) | 27.9pF @ 10V | 4 Ω @ 400mA, 4.5V | 1.5V @ 250μA | 0.36nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ALD1116SAL | Advanced Linear Devices Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 0°C~70°C TJ | Tube | 1 (Unlimited) | 70°C | 0°C | ROHS3 Compliant | 2012 | /files/advancedlineardevicesinc-ald1116pal-datasheets-3009.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 Weeks | 8 | 500mW | 500mW | 8-SOIC | 4.8mA | 13.2V | 10.6V | 500mW | 350Ohm | 12V | 2 N-Channel (Dual) Matched Pair | 3pF @ 5V | 500Ohm @ 5V | 1V @ 1μA | Standard | 500 Ω | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VT6J1T2CR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/rohmsemiconductor-vt6j1t2cr-datasheets-5909.pdf | 6-SMD, Flat Leads | Lead Free | 6 | 16 Weeks | EAR99 | e1 | TIN SILVER COPPER | 120mW | 260 | 6 | 10 | 2 | R-PDSO-F6 | 100mA | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | SWITCHING | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 120mW | 0.1A | 2 P-Channel (Dual) | 15pF @ 10V | 3.8 Ω @ 100mA, 4.5V | 1V @ 100μA | Logic Level Gate, 1.2V Drive | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ALD1115PAL | Advanced Linear Devices Inc. | $4.73 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 0°C~70°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/advancedlineardevicesinc-ald1115pal-datasheets-5981.pdf | 8-DIP (0.300, 7.62mm) | 8 | 8 Weeks | 8 | yes | EAR99 | unknown | 500mW | Dual | 500mW | 2 | 2mA | 13.2V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | 10.6V | METAL-OXIDE SEMICONDUCTOR | 500Ohm | -12V | N and P-Channel Complementary | 3pF @ 5V | 1800 Ω @ 5V | 1V @ 1μA | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ALD1103PBL | Advanced Linear Devices Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 0°C~70°C TJ | Tube | 1 (Unlimited) | 70°C | 0°C | ROHS3 Compliant | 2005 | /files/advancedlineardevicesinc-ald1103sbl-datasheets-3485.pdf | 14-DIP (0.300, 7.62mm) | 8 Weeks | 14 | 500mW | 500mW | 14-PDIP | 10pF | 16mA | 13.2V | 10.6V | 500mW | 270Ohm | -12V | 2 N and 2 P-Channel Matched Pair | 10pF @ 5V | 75Ohm @ 5V | 1V @ 10μA | 40mA 16mA | Standard | 75 Ω | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NX3008PBKV,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/nexperiausainc-nx3008pbkv115-datasheets-5992.pdf | SOT-563, SOT-666 | Lead Free | 6 | 4 Weeks | 6 | No | e3 | Tin (Sn) | YES | 500mW | FLAT | 6 | 390mW | 2 | R-PDSO-G3 | 19 ns | 30ns | 38 ns | 65 ns | 220mA | 8V | -30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 2 P-Channel (Dual) | 46pF @ 15V | 4.1 Ω @ 200mA, 4.5V | 1.1V @ 250μA | 0.72nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMQ8203 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GreenBridge™ PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdmq8203-datasheets-5984.pdf | 12-WDFN Exposed Pad | 5mm | 750μm | 4.5mm | Lead Free | 12 | 9 Weeks | 210mg | No SVHC | 12 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e4 | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) | 2.5W | FDMQ8203 | Dual | 2.5W | 4 | Other Transistors | 2.8ns | 2.7 ns | 2.6A | 20V | SILICON | DRAIN | SWITCHING | N-CHANNEL AND P-CHANNEL | 100V 80V | METAL-OXIDE SEMICONDUCTOR | 3V | 6A | 0.11Ohm | -80V | 2 N and 2 P-Channel (H-Bridge) | 210pF @ 50V | 3 V | 110m Ω @ 3A, 10V | 4V @ 250μA | 3.4A 2.6A | 5nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||
| DF11MR12W1M1B11BPSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolSiC™+ | Chassis Mount | -40°C~150°C TJ | Not Applicable | ROHS3 Compliant | /files/infineontechnologies-df11mr12w1m1b11bpsa1-datasheets-6016.pdf | Module | 16 Weeks | 1200V | 20mW | 2 N-Channel (Dual) | 3680pF @ 800V | 22.5m Ω @ 50A, 15V | 5.55V @ 20mA | 50A Tj | 124nC @ 15V | Silicon Carbide (SiC) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6N35FE,LM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2009 | /files/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | SOT-563, SOT-666 | 12 Weeks | unknown | 150mW | SSM6N35 | 180mA | 20V | 150mW | 2 N-Channel (Dual) | 9.5pF @ 3V | 3 Ω @ 50mA, 4V | 1V @ 1mA | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SLA5073 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2001 | /files/sanken-sla5073-datasheets-5888.pdf | 15-SIP Exposed Tab, Formed Leads | 15 | 12 Weeks | yes | EAR99 | 8541.29.00.95 | 5W | SINGLE | NOT SPECIFIED | 15 | NOT SPECIFIED | 6 | Not Qualified | R-PSFM-T15 | 5A | SILICON | 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | SWITCHING | P-CHANNEL | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 5W | 5A | 8A | 0.3Ohm | 6 N-Channel (3-Phase Bridge) | 320pF @ 10V | 300m Ω @ 3A, 4V | 2V @ 250μA | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CAS300M17BM2 | Cree/Wolfspeed |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Z-Rec® | Chassis Mount | -40°C~150°C TJ | Tray | 1 (Unlimited) | 150°C | RoHS Compliant | 2014 | Module | 106.4mm | 30mm | 61.4mm | 19 Weeks | Unknown | 7 | 1.76kW | Module | 300A | 1700V 1.7kV | 2.3V | 1760W | 8mOhm | 2 N-Channel (Half Bridge) | 20000pF @ 1000V | 10mOhm @ 225A, 20V | 2.3V @ 15mA (Typ) | 325A Tc | 1076nC @ 20V | Silicon Carbide (SiC) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CCS050M12CM2 | Cree/Wolfspeed |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Z-FET™ Z-Rec™ | Chassis Mount, Screw | Chassis Mount | 150°C TJ | Bulk | 1 (Unlimited) | 150°C | -40°C | RoHS Compliant | 2013 | Module | 17.5mm | 19 Weeks | Unknown | 28 | No | 337W | 6 | 312W | 6 | 150°C | Module | 2.81nF | 21 ns | 19ns | 30 ns | 50 ns | 87A | 25V | 1200V 1.2kV | 2.3V | 337W | 1.2kV | 25mOhm | 1.2kV | 6 N-Channel (3-Phase Bridge) | 2.810nF @ 800V | 34mOhm @ 50A, 20V | 2.3V @ 2.5mA | 87A Tc | 180nC @ 20V | Silicon Carbide (SiC) | 34 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6N35AFE,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | SOT-563, SOT-666 | 6 | 12 Weeks | YES | FLAT | 2 | R-PDSO-F6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | SWITCHING | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 250mW | 0.25A | 2.4Ohm | 10 pF | 2 N-Channel (Dual) | 36pF @ 10V | 1.1 Ω @ 150mA, 4.5V | 1V @ 100μA | 250mA Ta | 0.34nC @ 4.5V | Logic Level Gate, 1.2V Drive | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN33D8LDW-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/diodesincorporated-dmn33d8ldw7-datasheets-5901.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 16 Weeks | EAR99 | HIGH RELIABILITY | e3 | Matte Tin (Sn) | AEC-Q101 | 350mW | GULL WING | 260 | 30 | 2 | R-PDSO-G6 | 250mA | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 350mW | 0.25A | 3Ohm | 2 N-Channel (Dual) | 48pF @ 5V | 2.4 Ω @ 250mA, 10V | 1.5V @ 100μA | 1.23nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CAS120M12BM2 | Cree/Wolfspeed |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Z-Rec® | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | RoHS Compliant | 2014 | Module | 106.4mm | 30mm | 61.4mm | 19 Weeks | No SVHC | 925W | 193A | 1200V 1.2kV | 2.6V | 2 N-Channel (Half Bridge) | 6300pF @ 1000V | 16m Ω @ 120A, 20V | 2.6V @ 6mA (Typ) | 193A Tc | 378nC @ 20V | Silicon Carbide (SiC) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SLA5085 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2001 | /files/sanken-sla5085-datasheets-5811.pdf | 12-SIP | 12 | 12 Weeks | yes | EAR99 | unknown | 8541.29.00.95 | 5W | SINGLE | NOT SPECIFIED | 12 | NOT SPECIFIED | 5 | Not Qualified | R-PSFM-T12 | 10A | SILICON | COMMON SOURCE, 5 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 5W | 0.22Ohm | 30 mJ | 5 N-Channel, Common Source | 320pF @ 10V | 220m Ω @ 3A, 4V | 2V @ 250μA | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ALD1105PBL | Advanced Linear Devices Inc. | $6.33 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 0°C~70°C TJ | Tube | 1 (Unlimited) | 70°C | 0°C | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/advancedlineardevicesinc-ald1105sbl-datasheets-9299.pdf | 14-DIP (0.300, 7.62mm) | 8 Weeks | 14 | 500mW | Dual | 500mW | 14-PDIP | 2mA | 13.2V | 10.6V | 500mW | 1.2kOhm | -12V | 2 N and 2 P-Channel Matched Pair | 3pF @ 5V | 500Ohm @ 5V | 1V @ 1μA | Standard | 500 Ω | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPG20N04S408AATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount, Wettable Flank | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipg20n04s408aatma1-datasheets-5581.pdf | 8-PowerVDFN | Contains Lead | 12 Weeks | 8 | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | 65W | NOT SPECIFIED | NOT SPECIFIED | 20A | 40V | 40V | 2 N-Channel (Dual) | 2940pF @ 25V | 7.6m Ω @ 17A, 10V | 4V @ 30μA | 36nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STS2DNF30L | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-sts2dnf30l-datasheets-5256.pdf | 30V | 3A | 8-SOIC (0.154, 3.90mm Width) | 50.8mm | 6.35mm | 6.35mm | Lead Free | 8 | 4.535924g | No SVHC | 8 | NRND (Last Updated: 7 months ago) | EAR99 | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 2W | GULL WING | 260 | STS2D | 8 | 30 | 2W | 2 | FET General Purpose Power | 19 ns | 20ns | 8 ns | 12 ns | 3A | 18V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 1.7V | 3A | 9A | 0.15Ohm | 30V | 2 N-Channel (Dual) | 121pF @ 25V | 110m Ω @ 1A, 10V | 2.5V @ 250μA | 4.5nC @ 10V | Logic Level Gate |
