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ContactMOSFETs Transistors Arrays(4365)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | Number of Functions | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Base Part Number | Pin Count | Supply Voltage-Max (Vsup) | Supply Voltage-Min (Vsup) | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | Reverse Voltage | Output Current-Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max |
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| 2N7002VA | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/onsemiconductor-2n7002v-datasheets-1455.pdf | SOT-563, SOT-666 | 6 | 4 Weeks | 32mg | 6 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | Tin | No | e3 | 250mW | FLAT | Dual | 250mW | 2 | FET General Purpose Power | 5.85 ns | 12.5 ns | 280mA | 20V | SILICON | SWITCHING | 60V | METAL-OXIDE SEMICONDUCTOR | 7 pF | 60V | 2 N-Channel (Dual) | 50pF @ 25V | 7.5 Ω @ 50mA, 5V | 2.5V @ 250μA | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD88584Q5DCT | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 22-PowerTFDFN | 6mm | 5mm | 22 | 8 Weeks | 22 | ACTIVE (Last Updated: 2 days ago) | yes | 850μm | not_compliant | 1 | e3 | Matte Tin (Sn) | YES | DUAL | NO LEAD | 260 | 10V | CSD88584 | 16V | 4.5V | BRUSHLESS DC MOTOR CONTROLLER | NOT SPECIFIED | 40V | 12W | 50A | 2 N-Channel (Half Bridge) | 12400pF @ 20V | 0.95m Ω @ 30A, 10V | 2.3V @ 250μA | 88nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMDT670UPE,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/nexperiausainc-pmdt670upe115-datasheets-6056.pdf | SOT-563, SOT-666 | Lead Free | 6 | 4 Weeks | 6 | No | e3 | Tin (Sn) | YES | 330mW | FLAT | 6 | 390mW | 2 | 18 ns | 30ns | 72 ns | 80 ns | 550mA | 8V | -20V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 0.55A | 0.85Ohm | 2 P-Channel (Dual) | 87pF @ 10V | 850m Ω @ 400mA, 4.5V | 1.3V @ 250μA | 1.14nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTJD5121NT2G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/onsemiconductor-nvjd5121nt1g-datasheets-9702.pdf | 6-TSSOP, SC-88, SOT-363 | 2.2mm | 1mm | 1.35mm | Lead Free | 6 | 8 Weeks | No SVHC | 6 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | LOW THRESHOLD | No | e3 | Tin (Sn) | YES | 250mW | GULL WING | NTJD5121N | 6 | Dual | 250mW | 2 | FET General Purpose Power | 22 ns | 34ns | 32 ns | 34 ns | 295mA | 20V | SILICON | SWITCHING | 60V | METAL-OXIDE SEMICONDUCTOR | 1.7V | 60V | 2 N-Channel (Dual) | 26pF @ 20V | 1.6 Ω @ 500mA, 10V | 2.5V @ 250μA | 0.9nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||
| UM6K31NFHATCN | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ROHS3 Compliant | 2016 | 6-TSSOP, SC-88, SOT-363 | 16 Weeks | Unknown | 6 | EAR99 | not_compliant | 150mW | NOT SPECIFIED | NOT SPECIFIED | 250mA | 60V | 2.3V | 2 N-Channel (Dual) | 15pF @ 25V | 2.4 Ω @ 250mA, 10V | 2.3V @ 1mA | 250mA Ta | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN53D0LDW-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2014 | /files/diodesincorporated-dmn53d0ldw13-datasheets-5922.pdf | 6-TSSOP, SC-88, SOT-363 | 16 Weeks | 6.010099mg | EAR99 | e3 | Matte Tin (Sn) | 310mW | 260 | 2 | Dual | 30 | 2.7 ns | 2.5ns | 11 ns | 19 ns | 360mA | 20V | 50V | 50V | 2 N-Channel (Dual) | 46pF @ 25V | 1.6 Ω @ 500mA, 10V | 1.5V @ 250μA | 0.6nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6P15FE(TE85L,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2009 | /files/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | SOT-563, SOT-666 | 12 Weeks | 6 | unknown | 150mW | SSM6P15 | 150mW | 2 | 100mA | 20V | 30V | 2 P-Channel (Dual) | 9.1pF @ 3V | 12 Ω @ 10mA, 4V | 1.7V @ 100μA | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSS84V-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/diodesincorporated-bss84v7-datasheets-6166.pdf | SOT-563, SOT-666 | 1.6mm | 600μm | 1.2mm | Lead Free | 6 | 19 Weeks | 3.005049mg | No SVHC | 10Ohm | 6 | yes | EAR99 | Tin | No | e3 | 150mW | FLAT | 260 | 6 | Dual | 40 | 150mW | 2 | 10 ns | 18 ns | 130mA | 15V | SILICON | SWITCHING | 50V | METAL-OXIDE SEMICONDUCTOR | 0.13A | -50V | 2 P-Channel (Dual) | 45pF @ 25V | 10 Ω @ 100mA, 5V | 2V @ 1mA | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||
| VT6J1T2CR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/rohmsemiconductor-vt6j1t2cr-datasheets-5909.pdf | 6-SMD, Flat Leads | Lead Free | 6 | 16 Weeks | EAR99 | e1 | TIN SILVER COPPER | 120mW | 260 | 6 | 10 | 2 | R-PDSO-F6 | 100mA | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | SWITCHING | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 120mW | 0.1A | 2 P-Channel (Dual) | 15pF @ 10V | 3.8 Ω @ 100mA, 4.5V | 1V @ 100μA | Logic Level Gate, 1.2V Drive | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ALD1115PAL | Advanced Linear Devices Inc. | $4.73 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 0°C~70°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/advancedlineardevicesinc-ald1115pal-datasheets-5981.pdf | 8-DIP (0.300, 7.62mm) | 8 | 8 Weeks | 8 | yes | EAR99 | unknown | 500mW | Dual | 500mW | 2 | 2mA | 13.2V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | 10.6V | METAL-OXIDE SEMICONDUCTOR | 500Ohm | -12V | N and P-Channel Complementary | 3pF @ 5V | 1800 Ω @ 5V | 1V @ 1μA | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ALD1103PBL | Advanced Linear Devices Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 0°C~70°C TJ | Tube | 1 (Unlimited) | 70°C | 0°C | ROHS3 Compliant | 2005 | /files/advancedlineardevicesinc-ald1103sbl-datasheets-3485.pdf | 14-DIP (0.300, 7.62mm) | 8 Weeks | 14 | 500mW | 500mW | 14-PDIP | 10pF | 16mA | 13.2V | 10.6V | 500mW | 270Ohm | -12V | 2 N and 2 P-Channel Matched Pair | 10pF @ 5V | 75Ohm @ 5V | 1V @ 10μA | 40mA 16mA | Standard | 75 Ω | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NX3008PBKV,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/nexperiausainc-nx3008pbkv115-datasheets-5992.pdf | SOT-563, SOT-666 | Lead Free | 6 | 4 Weeks | 6 | No | e3 | Tin (Sn) | YES | 500mW | FLAT | 6 | 390mW | 2 | R-PDSO-G3 | 19 ns | 30ns | 38 ns | 65 ns | 220mA | 8V | -30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 2 P-Channel (Dual) | 46pF @ 15V | 4.1 Ω @ 200mA, 4.5V | 1.1V @ 250μA | 0.72nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMQ8203 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GreenBridge™ PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdmq8203-datasheets-5984.pdf | 12-WDFN Exposed Pad | 5mm | 750μm | 4.5mm | Lead Free | 12 | 9 Weeks | 210mg | No SVHC | 12 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e4 | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) | 2.5W | FDMQ8203 | Dual | 2.5W | 4 | Other Transistors | 2.8ns | 2.7 ns | 2.6A | 20V | SILICON | DRAIN | SWITCHING | N-CHANNEL AND P-CHANNEL | 100V 80V | METAL-OXIDE SEMICONDUCTOR | 3V | 6A | 0.11Ohm | -80V | 2 N and 2 P-Channel (H-Bridge) | 210pF @ 50V | 3 V | 110m Ω @ 3A, 10V | 4V @ 250μA | 3.4A 2.6A | 5nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||
| DF11MR12W1M1B11BPSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolSiC™+ | Chassis Mount | -40°C~150°C TJ | Not Applicable | ROHS3 Compliant | /files/infineontechnologies-df11mr12w1m1b11bpsa1-datasheets-6016.pdf | Module | 16 Weeks | 1200V | 20mW | 2 N-Channel (Dual) | 3680pF @ 800V | 22.5m Ω @ 50A, 15V | 5.55V @ 20mA | 50A Tj | 124nC @ 15V | Silicon Carbide (SiC) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6N35FE,LM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2009 | /files/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | SOT-563, SOT-666 | 12 Weeks | unknown | 150mW | SSM6N35 | 180mA | 20V | 150mW | 2 N-Channel (Dual) | 9.5pF @ 3V | 3 Ω @ 50mA, 4V | 1V @ 1mA | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SLA5073 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2001 | /files/sanken-sla5073-datasheets-5888.pdf | 15-SIP Exposed Tab, Formed Leads | 15 | 12 Weeks | yes | EAR99 | 8541.29.00.95 | 5W | SINGLE | NOT SPECIFIED | 15 | NOT SPECIFIED | 6 | Not Qualified | R-PSFM-T15 | 5A | SILICON | 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | SWITCHING | P-CHANNEL | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 5W | 5A | 8A | 0.3Ohm | 6 N-Channel (3-Phase Bridge) | 320pF @ 10V | 300m Ω @ 3A, 4V | 2V @ 250μA | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CAS300M17BM2 | Cree/Wolfspeed |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Z-Rec® | Chassis Mount | -40°C~150°C TJ | Tray | 1 (Unlimited) | 150°C | RoHS Compliant | 2014 | Module | 106.4mm | 30mm | 61.4mm | 19 Weeks | Unknown | 7 | 1.76kW | Module | 300A | 1700V 1.7kV | 2.3V | 1760W | 8mOhm | 2 N-Channel (Half Bridge) | 20000pF @ 1000V | 10mOhm @ 225A, 20V | 2.3V @ 15mA (Typ) | 325A Tc | 1076nC @ 20V | Silicon Carbide (SiC) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CCS050M12CM2 | Cree/Wolfspeed |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Z-FET™ Z-Rec™ | Chassis Mount, Screw | Chassis Mount | 150°C TJ | Bulk | 1 (Unlimited) | 150°C | -40°C | RoHS Compliant | 2013 | Module | 17.5mm | 19 Weeks | Unknown | 28 | No | 337W | 6 | 312W | 6 | 150°C | Module | 2.81nF | 21 ns | 19ns | 30 ns | 50 ns | 87A | 25V | 1200V 1.2kV | 2.3V | 337W | 1.2kV | 25mOhm | 1.2kV | 6 N-Channel (3-Phase Bridge) | 2.810nF @ 800V | 34mOhm @ 50A, 20V | 2.3V @ 2.5mA | 87A Tc | 180nC @ 20V | Silicon Carbide (SiC) | 34 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6N35AFE,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | SOT-563, SOT-666 | 6 | 12 Weeks | YES | FLAT | 2 | R-PDSO-F6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | SWITCHING | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 250mW | 0.25A | 2.4Ohm | 10 pF | 2 N-Channel (Dual) | 36pF @ 10V | 1.1 Ω @ 150mA, 4.5V | 1V @ 100μA | 250mA Ta | 0.34nC @ 4.5V | Logic Level Gate, 1.2V Drive | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN33D8LDW-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/diodesincorporated-dmn33d8ldw7-datasheets-5901.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 16 Weeks | EAR99 | HIGH RELIABILITY | e3 | Matte Tin (Sn) | AEC-Q101 | 350mW | GULL WING | 260 | 30 | 2 | R-PDSO-G6 | 250mA | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 350mW | 0.25A | 3Ohm | 2 N-Channel (Dual) | 48pF @ 5V | 2.4 Ω @ 250mA, 10V | 1.5V @ 100μA | 1.23nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CAS120M12BM2 | Cree/Wolfspeed |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Z-Rec® | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | RoHS Compliant | 2014 | Module | 106.4mm | 30mm | 61.4mm | 19 Weeks | No SVHC | 925W | 193A | 1200V 1.2kV | 2.6V | 2 N-Channel (Half Bridge) | 6300pF @ 1000V | 16m Ω @ 120A, 20V | 2.6V @ 6mA (Typ) | 193A Tc | 378nC @ 20V | Silicon Carbide (SiC) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN32D4SDW-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmn32d4sdw7-datasheets-5926.pdf | 6-TSSOP, SC-88, SOT-363 | 16 Weeks | EAR99 | e3 | Matte Tin (Sn) | 290mW | 260 | 30 | 650mA | 30V | 290mW | 2 N-Channel (Dual) | 50pF @ 15V | 400m Ω @ 250mA, 10V | 1.6V @ 250μA | 1.3nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CAS325M12HM2 | Cree/Wolfspeed |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Z-REC™ | 175°C TJ | Bulk | Not Applicable | RoHS Compliant | 2016 | Module | 19 Weeks | Module | 1200V 1.2kV | 3000W | 3.7mOhm | 2 N-Channel (Half Bridge) | 4.3mOhm @ 400A, 20V | 4V @ 105mA | 444A Tc | 1127nC @ 20V | Silicon Carbide (SiC) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CAB450M12XM3 | Cree/Wolfspeed | $690.31 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | -40°C~175°C TJ | Box | 1 (Unlimited) | Module | 8 Weeks | Module | 1200V | 850W | 2 N-Channel (Half Bridge) | 38000pF @ 800V | 3.7mOhm @ 450A, 15V | 3.6V @ 132mA | 450A | 1330nC @ 15V | Silicon Carbide (SiC) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMG6301UDW-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2013 | /files/diodesincorporated-dmg6301udw7-datasheets-5939.pdf | 6-TSSOP, SC-88, SOT-363 | 15 Weeks | 6.010099mg | EAR99 | e3 | Matte Tin (Sn) | 300mW | 260 | DMG6301 | 2 | Dual | 30 | 2.9 ns | 1.8ns | 2.3 ns | 6.6 ns | 240mA | 8V | 25V | 2 N-Channel (Dual) | 27.9pF @ 10V | 4 Ω @ 400mA, 4.5V | 1.5V @ 250μA | 0.36nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ALD1116SAL | Advanced Linear Devices Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 0°C~70°C TJ | Tube | 1 (Unlimited) | 70°C | 0°C | ROHS3 Compliant | 2012 | /files/advancedlineardevicesinc-ald1116pal-datasheets-3009.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 Weeks | 8 | 500mW | 500mW | 8-SOIC | 4.8mA | 13.2V | 10.6V | 500mW | 350Ohm | 12V | 2 N-Channel (Dual) Matched Pair | 3pF @ 5V | 500Ohm @ 5V | 1V @ 1μA | Standard | 500 Ω | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ALD1107PBL | Advanced Linear Devices Inc. | $5.14 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 0°C~70°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/advancedlineardevicesinc-ald1107sbl-datasheets-9190.pdf | 14-DIP (0.300, 7.62mm) | 14 | 8 Weeks | 14 | yes | EAR99 | unknown | 500mW | DUAL | 500mW | 4 | 2mA | -13.2V | SILICON | COMMON SUBSTRATE, 4 ELEMENTS | SWITCHING | 10.6V | METAL-OXIDE SEMICONDUCTOR | -12V | 4 P-Channel, Matched Pair | 3pF @ 5V | 1800 Ω @ 5V | 1V @ 1μA | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ALD1117SAL | Advanced Linear Devices Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 0°C~70°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/advancedlineardevicesinc-ald1107sbl-datasheets-9190.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 8 Weeks | 8 | yes | EAR99 | unknown | 500mW | GULL WING | 500mW | 2 | 2mA | -13.2V | SILICON | COMMON SUBSTRATE, 2 ELEMENTS | SWITCHING | 10.6V | METAL-OXIDE SEMICONDUCTOR | -12V | 2 P-Channel (Dual) Matched Pair | 3pF @ 5V | 1800 Ω @ 5V | 1V @ 1μA | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJQ960EL-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | /files/vishaysiliconix-sqjq960elt1ge3-datasheets-5714.pdf | PowerPAK® 8 x 8 Dual | 2.03mm | 14 Weeks | 2 | 71W | 175°C | PowerPAK® 8 x 8 Dual | 10 ns | 22 ns | 63A | 20V | 60V | 71W | 7mOhm | 60V | 2 N-Channel (Dual) | 1950pF @ 25V | 9mOhm @ 10A, 10V | 2.5V @ 250μA | 63A Tc | 24nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ALD1101PAL | Advanced Linear Devices Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 0°C~70°C TJ | Tube | 1 (Unlimited) | 70°C | 0°C | ROHS3 Compliant | 2003 | /files/advancedlineardevicesinc-ald1101asal-datasheets-9948.pdf | 8-DIP (0.300, 7.62mm) | 8 Weeks | 8 | 500mW | Dual | 500mW | 8-PDIP | 40mA | 10.6V | 10.6V | 500mW | 75Ohm | 10.6V | 2 N-Channel (Dual) Matched Pair | 75Ohm @ 5V | 1V @ 10μA | Standard | 75 Ω |
