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ContactMOSFETs Transistors Arrays(4365)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | JESD-609 Code | Terminal Finish | Voltage | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max |
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| DMP4047SSD-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2013 | /files/diodesincorporated-dmp4047ssd13-datasheets-4695.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.95mm | 1.5mm | 3.95mm | 18 Weeks | 8 | EAR99 | No | e3 | Matte Tin (Sn) | 1.3W | 260 | 30 | 1.8W | 2 | 8.7 ns | 19.6ns | 25.5 ns | 34.9 ns | 5.1A | 20V | 40V | 2 P-Channel (Dual) | 1154pF @ 20V | 45m Ω @ 4.4A, 10V | 3V @ 250μA | 21.5nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD88539ND | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 8-SOIC (0.154, 3.90mm Width) | 4.9mm | 1.75mm | 3.91mm | Lead Free | 8 | 6 Weeks | 540.001716mg | No SVHC | 8 | ACTIVE (Last Updated: 4 days ago) | yes | 1.58mm | EAR99 | AVALANCHE RATED | Gold | No | e4 | 2.1W | GULL WING | 260 | CSD88539 | Dual | 2.1W | 2 | 6 ns | 9ns | 4 ns | 5 ns | 15A | 20V | SILICON | SWITCHING | 60V | METAL-OXIDE SEMICONDUCTOR | 3V | 6.3A | 46A | 0.034Ohm | 60V | 2 N-Channel (Dual) | 741pF @ 30V | 28m Ω @ 5A, 10V | 3.6V @ 250μA | 9.4nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||
| SI5515CDC-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si5515cdct1e3-datasheets-6614.pdf | 8-SMD, Flat Lead | Lead Free | 8 | 14 Weeks | 84.99187mg | Unknown | 8 | EAR99 | No | e3 | PURE MATTE TIN | 3.1W | DUAL | C BEND | 260 | SI5515 | 8 | 30 | 1.3W | 2 | 4A | 8V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | 20V | METAL-OXIDE SEMICONDUCTOR | 400mV | 4A | 0.036Ohm | N and P-Channel | 632pF @ 10V | 36m Ω @ 6A, 4.5V | 800mV @ 250μA | 11.3nC @ 5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||
| CSD87502Q2T | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 6-WDFN Exposed Pad | 2mm | 2mm | Lead Free | 6 | 12 Weeks | No SVHC | 6 | ACTIVE (Last Updated: 6 days ago) | yes | 750μm | AVALANCHE RATED | e3 | Matte Tin (Sn) | 2.3W | NO LEAD | CSD87502 | Dual | 2 | 5A | SILICON | DRAIN | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 1.6V | 5A | 23A | 29 pF | 3.1 mJ | 2 N-Channel (Dual) | 353pF @ 15V | 32.4m Ω @ 4A, 10V | 2V @ 250μA | 6nC @ 10V | Logic Level Gate, 5V Drive | |||||||||||||||||||||||||||||||||||||||||||||||
| SI3552DV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si3552dvt1e3-datasheets-4526.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | 14 Weeks | 19.986414mg | Unknown | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.15W | DUAL | GULL WING | 260 | SI3552 | 6 | 2 | 30 | 1.15W | 1 | Other Transistors | 2.5A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | N-CHANNEL AND P-CHANNEL | 30V | METAL-OXIDE SEMICONDUCTOR | 1V | 0.105Ohm | 30V | N and P-Channel | 1 V | 105m Ω @ 2.5A, 10V | 1V @ 250μA (Min) | 3.2nC @ 5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||
| NDS9948 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/onsemiconductor-nds9948-datasheets-4787.pdf | -60V | -2.3A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 20 Weeks | 187mg | No SVHC | 8 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | 2W | GULL WING | Dual | 2W | 2 | Other Transistors | 6 ns | 9ns | 3 ns | 16 ns | 2.3A | 20V | SILICON | SWITCHING | 60V | METAL-OXIDE SEMICONDUCTOR | -1.5V | 900mW | 10A | 15 mJ | -60V | 2 P-Channel (Dual) | 394pF @ 30V | -1.5 V | 250m Ω @ 2.3A, 10V | 3V @ 250μA | 13nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||
| FDS8984 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/onsemiconductor-fds8984-datasheets-4474.pdf | 30V | 7A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 10 Weeks | 187mg | No SVHC | 23MOhm | 8 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | Tin | No | e3 | 1.6W | GULL WING | Dual | 1.6W | 2 | FET General Purpose Power | 5 ns | 9ns | 9 ns | 42 ns | 7mA | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 1.7V | 7A | 30A | 30V | 2 N-Channel (Dual) | 635pF @ 15V | 1.7 V | 23m Ω @ 7A, 10V | 2.5V @ 250μA | 13nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||
| DMC2020USD-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/diodesincorporated-dmc2020usd13-datasheets-4753.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 16 Weeks | 73.992255mg | No SVHC | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.8W | DUAL | GULL WING | 260 | 8 | 40 | 2 | Other Transistors | 94.1 ns | 6.3A | 10V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 6.5A | 33.6A | 20V | N and P-Channel | 1149pF @ 10V | 20m Ω @ 7A, 4.5V | 1.5V @ 250μA | 7.8A 6.3A | 11.6nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||
| DMP3036SSD-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/diodesincorporated-dmp3036ssd13-datasheets-4794.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 23 Weeks | 8 | EAR99 | e3 | Matte Tin (Sn) | 1.2W | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | 10.6A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 1.2W | 0.02Ohm | 2 P-Channel (Dual) | 1931pF @ 15V | 20m Ω @ 9A, 10V | 3V @ 250μA | 16.5nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN2008LFU-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/diodesincorporated-dmn2008lfu7-datasheets-4596.pdf | 6-UFDFN Exposed Pad | 6 | 17 Weeks | EAR99 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 1W | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-N6 | 14.5A | SILICON | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 1W | 0.0096Ohm | 2 N-Channel (Dual) Common Drain | 1418pF @ 10V | 5.4m Ω @ 5.5A, 4.5V | 1.5V @ 250A | 42.3nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA921EDJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sia921edjt1ge3-datasheets-4545.pdf | PowerPAK® SC-70-6 Dual | 2.05mm | 750μm | 2.05mm | Lead Free | 6 | 14 Weeks | 28.009329mg | 59MOhm | 6 | yes | EAR99 | No | e3 | MATTE TIN | 7.8W | 260 | 6 | Dual | 40 | 1.9W | 2 | Other Transistors | 5 ns | 12ns | 10 ns | 25 ns | -4.5A | 12V | SILICON | DRAIN | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 15A | -20V | 2 P-Channel (Dual) | 59m Ω @ 3.6A, 4.5V | 1.4V @ 250μA | 4.5A | 23nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||
| SI3552DV-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2007 | /files/vishaysiliconix-si3552dvt1e3-datasheets-4526.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 1mm | 1.65mm | 19.986414mg | Unknown | 200mOhm | 6 | No | 1.15W | SI3552 | 2 | Single | 1.15W | 2 | 6-TSOP | 8 ns | 12ns | 7 ns | 12 ns | 51A | 20V | 30V | 1V | 1.15W | 85mOhm | 30V | N and P-Channel | 1 V | 105mOhm @ 2.5A, 10V | 1V @ 250μA (Min) | 2.5A | 3.2nC @ 5V | Logic Level Gate | 105 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||
| FDS6961A | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/onsemiconductor-fds6961a-datasheets-4664.pdf | 30V | 3.5A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 10 Weeks | 230.4mg | No SVHC | 90mOhm | 8 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | 2W | GULL WING | Dual | 2W | 2 | FET General Purpose Power | 3 ns | 11ns | 3 ns | 7 ns | 3.5A | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 1.8V | 900mW | 30V | 2 N-Channel (Dual) | 220pF @ 15V | 1.8 V | 90m Ω @ 3.5A, 10V | 3V @ 250μA | 4nC @ 5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||
| SI4532CDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4532cdyt1ge3-datasheets-4680.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.75mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | Unknown | 89mOhm | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | 2.78W | DUAL | GULL WING | 260 | SI4532 | 8 | 2 | 30 | 2.78W | 2 | 150°C | 5.5 ns | 13ns | 7.7 ns | 17 ns | 6A | 20V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 1V | 6A | 30V | N and P-Channel | 305pF @ 15V | 1 V | 47m Ω @ 3.5A, 10V | 3V @ 250μA | 6A 4.3A | 9nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||
| CSD75207W15 | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | -0.8 | ROHS3 Compliant | 9-UFBGA, DSBGA | 1.75mm | 625μm | 1.75mm | Lead Free | 12 Weeks | 9 | ACTIVE (Last Updated: 5 days ago) | yes | Copper, Silver, Tin | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 700mW | BOTTOM | BALL | CSD75207 | Other Transistors | 12.8 ns | 8.6ns | 16 ns | 32.1 ns | 3.9A | -6V | METAL-OXIDE SEMICONDUCTOR | 2 P-Channel (Dual) Common Source | 595pF @ 10V | 162m Ω @ 1A, 1.8V | 1.1V @ 250μA | 3.7nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7507TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | /files/infineon-irf7507trpbf-datasheets-1231.pdf | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 3mm | 860μm | 3mm | Lead Free | 8 | 12 Weeks | No SVHC | 270mOhm | 8 | EAR99 | ULTRA LOW RESISTANCE | No | e3 | Matte Tin (Sn) | 1.25W | DUAL | GULL WING | 260 | IRF7507PBF | 40 | 1.25W | 2 | 38 ns | 2.4A | 12V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 700mV | 19A | 20V | N and P-Channel | 260pF @ 15V | 700 mV | 140m Ω @ 1.7A, 4.5V | 700mV @ 250μA | 2.4A 1.7A | 8nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||
| FDMA1029PZ | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdma1029pz-datasheets-4699.pdf | -20V | -3.1A | 6-VDFN Exposed Pad | 2mm | 750μm | 2mm | Lead Free | 6 | 16 Weeks | 40mg | No SVHC | 6 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | Gold | No | e4 | 1.4W | Dual | 1.4W | 2 | Other Transistors | 13 ns | 11ns | 11 ns | 37 ns | 3.1A | 12V | -20V | SILICON | DRAIN | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 1V | 700mW | 0.095Ohm | -20V | 2 P-Channel (Dual) | 540pF @ 10V | -1 V | 95m Ω @ 3.1A, 4.5V | 1.5V @ 250μA | 10nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||
| FDMB2307NZ | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/onsemiconductor-fdmb2307nz-datasheets-4741.pdf | 6-WDFN Exposed Pad | 2mm | 750μm | 3mm | Lead Free | 6 | 16 Weeks | 12.0024mg | No SVHC | 6 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | Gold | No | e4 | 800mW | FDMB2307 | 2.2W | 2 | FET General Purpose Power | 1.76nF | 12 ns | 34ns | 17 ns | 32 ns | 8A | 12V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 1V | 9.7A | 2 N-Channel (Dual) Common Drain | 28nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||
| FDS6930B | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/onsemiconductor-fds6930b-datasheets-4682.pdf | 30V | 5.5A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 10 Weeks | No SVHC | 38MOhm | 8 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | 55A | e3 | Tin (Sn) | 30V | 2W | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2W | 2 | FET General Purpose Power | Not Qualified | 6 ns | 6ns | 2 ns | 16 ns | 5.5A | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 1.9V | 900mW | 60 pF | 30V | 2 N-Channel (Dual) | 412pF @ 15V | 1.9 V | 38m Ω @ 5.5A, 10V | 3V @ 250μA | 3.8nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||
| DMC1028UFDB-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmc1028ufdb7-datasheets-4767.pdf | 6-UDFN Exposed Pad | 6 | 15 Weeks | EAR99 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 1.36W | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 2 | S-PDSO-N6 | 3.4A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL AND P-CHANNEL | 12V 20V | 12V | METAL-OXIDE SEMICONDUCTOR | 6A | 0.025Ohm | N and P-Channel | 787pF @ 6V | 25m Ω @ 5.2A, 4.5V | 1V @ 250μA | 6A 3.4A | 18.5nC @ 8V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMG4822SSD-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/diodesincorporated-dmg4822ssd13-datasheets-4717.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.95mm | 1.5mm | 3.95mm | Lead Free | 8 | 15 Weeks | 73.992255mg | No SVHC | 8 | yes | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | 1.42W | GULL WING | 260 | DMG4822 | 8 | Dual | 40 | 1.42W | 2 | FET General Purpose Power | 2.9 ns | 7.9ns | 3.1 ns | 14.6 ns | 10A | 25V | SILICON | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 60A | 30V | 2 N-Channel (Dual) | 478.9pF @ 16V | 20m Ω @ 8.5A, 10V | 3V @ 250μA | 10.5nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||
| FDME1034CZT | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | 6-UFDFN Exposed Pad | 1.6mm | 500μm | 1.6mm | 6 | 16 Weeks | 25.2mg | No SVHC | 6 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | ESD PROTECTION | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 1.4W | Dual | 1.3W | 2 | Other Transistors | 4.8ns | 16 ns | 33 ns | 3.8A | 8V | SILICON | DRAIN | SWITCHING | N-CHANNEL AND P-CHANNEL | 20V | METAL-OXIDE SEMICONDUCTOR | 700mV | 600mW | 3.4A | 40 pF | -20V | N and P-Channel | 300pF @ 10V | 700 mV | 66m Ω @ 3.4A, 4.5V | 1V @ 250μA | 3.8A 2.6A | 4.2nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||
| SQ3987EV-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2018 | /files/vishaysiliconix-sq3987evt1ge3-datasheets-4406.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | 12 Weeks | unknown | YES | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-G6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 1.67W | 3A | 0.185Ohm | 74 pF | 2 P-Channel (Dual) | 570pF @ 15V | 133m Ω @ 1.5A, 10V | 2.5V @ 250μA | 3A Tc | 12.2nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ZXMC10A816N8TC | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/diodesincorporated-zxmc10a816n8tc-datasheets-4076.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.95mm | 1.5mm | 3.95mm | 8 | 17 Weeks | 73.992255mg | No SVHC | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.8W | DUAL | GULL WING | 260 | 8 | 40 | 2.1W | 2 | Other Transistors | 4.3 ns | 5.2ns | 12 ns | 20 ns | 2A | 20V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | 100V | METAL-OXIDE SEMICONDUCTOR | 1.7A | 9.4A | 100V | N and P-Channel | 497pF @ 50V | 230m Ω @ 1A, 10V | 2.4V @ 250μA | 9.2nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||
| NTMFD4902NFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/onsemiconductor-ntmfd4902nft1g-datasheets-4144.pdf | 8-PowerTDFN | Lead Free | 8 | 17 Weeks | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | Tin | No | e3 | YES | 1.16W | FLAT | 8 | Dual | 2 | FET General Purpose Power | 13.3A | 20V | SILICON | DRAIN SOURCE | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 1.1W 1.16W | 13.5A | 60A | 0.01Ohm | 2 N-Channel (Dual), Schottky | 1150pF @ 15V | 6.5m Ω @ 10A, 10V | 2.2V @ 250μA | 10.3A 13.3A | 9.7nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||
| SQJ968EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TA | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sqj968ept1ge3-datasheets-4319.pdf | PowerPAK® SO-8 Dual | 4 | 12 Weeks | Unknown | 8 | EAR99 | 25W | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 25W | 2 | R-PSSO-G4 | 18A | 20V | SILICON | DRAIN | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 2V | 42W Tc | 0.0336Ohm | 4 mJ | 2 N-Channel (Dual) | 714pF @ 30V | 33.6m Ω @ 4.8A, 10V | 2.5V @ 250μA | 23.5A Tc | 18.5nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ4940AEY-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sq4940aeyt1ge3-datasheets-4275.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 12 Weeks | 506.605978mg | EAR99 | unknown | 4W | GULL WING | NOT SPECIFIED | 2 | Dual | NOT SPECIFIED | 2 | R-PDSO-G8 | 8 ns | 13ns | 9 ns | 20 ns | 8A | 20V | SILICON | 40V | 40V | METAL-OXIDE SEMICONDUCTOR | 8A | 55 pF | 2 N-Channel (Dual) | 741pF @ 20V | 24m Ω @ 5.3A, 10V | 2.5V @ 250μA | 43nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7980DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si7980dpt1ge3-datasheets-4445.pdf | PowerPAK® SO-8 Dual | 4.9mm | 1.04mm | 5.89mm | 6 | 12 Weeks | 506.605978mg | 8 | yes | EAR99 | Tin | No | e3 | 21.9W | C BEND | 260 | SI7980 | 8 | 2 | Dual | 30 | 3.4W | 2 | FET General Purpose Powers | R-XDSO-C6 | 18 ns | 18ns | 10 ns | 25 ns | 8A | 16V | SILICON | DRAIN | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 19.8W 21.9W | 8A | 30A | 20V | 2 N-Channel (Half Bridge) | 1010pF @ 10V | 22m Ω @ 5A, 10V | 2.5V @ 250μA | 27nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||
| SIA910EDJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sia910edjt1ge3-datasheets-4467.pdf | PowerPAK® SC-70-6 Dual | Lead Free | 6 | 14 Weeks | 28.009329mg | Unknown | 28MOhm | 6 | yes | EAR99 | No | e3 | MATTE TIN | 7.8W | 260 | SIA910E | 6 | 2 | Dual | 40 | 1.9W | 2 | FET General Purpose Powers | 10 ns | 12ns | 12 ns | 25 ns | 4.5A | 8V | SILICON | DRAIN | SWITCHING | 12V | METAL-OXIDE SEMICONDUCTOR | 400mV | 12V | 2 N-Channel (Dual) | 455pF @ 6V | 400 mV | 28m Ω @ 5.2A, 4.5V | 1V @ 250μA | 16nC @ 8V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||
| SIA517DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-sia517djt1ge3-datasheets-4425.pdf | PowerPAK® SC-70-6 Dual | 2.05mm | 800μm | 2.05mm | Lead Free | 6 | 14 Weeks | 28.009329mg | Unknown | 6 | yes | EAR99 | e3 | Matte Tin (Sn) | 6.5W | NO LEAD | 260 | SIA517 | 6 | 2 | 40 | 1.9W | 2 | Other Transistors | Not Qualified | 150°C | 30 ns | 25ns | 25 ns | 30 ns | 4.5A | 8V | SILICON | DRAIN | SWITCHING | N-CHANNEL AND P-CHANNEL | 12V | METAL-OXIDE SEMICONDUCTOR | 12V | N and P-Channel | 500pF @ 6V | 400 mV | 29m Ω @ 5A, 4.5V | 1V @ 250μA | 15nC @ 8V | Logic Level Gate |
