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ContactMOSFETs Transistors Arrays(4365)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | Power Rating | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Row Spacing | Threshold Voltage | Power - Max | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Turn On Time-Max (ton) | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature |
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| FDS6975 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/onsemiconductor-fds6975-datasheets-5380.pdf | -30V | -6A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 10 Weeks | 187mg | No SVHC | 32mOhm | 8 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | LOGIC LEVEL COMPATIBLE | Tin | No | e3 | 2W | GULL WING | Dual | 2W | 2 | Other Transistors | 13 ns | 22ns | 18 ns | 47 ns | -6A | 20V | -30V | SILICON | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | -1.7V | 900mW | 6A | -30V | 2 P-Channel (Dual) | 1540pF @ 15V | -1.7 V | 32m Ω @ 6A, 10V | 3V @ 250μA | 6A | 20nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||
| AON6994 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2014 | 8-PowerWDFN | 18 Weeks | 8 | yes | 3.1W | NOT SPECIFIED | NOT SPECIFIED | 26A | 30V | 2 N-Channel (Dual) Asymmetrical | 820pF @ 15V | 5.2m Ω @ 20A, 10V | 2.2V @ 250μA | 19A 26A | 13nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ZXMN6A11DN8TA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/diodesincorporated-zxmn6a11dn8ta-datasheets-5424.pdf | 60V | 2.7A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 17 Weeks | 73.992255mg | No SVHC | 120mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 2.1W | GULL WING | 260 | 8 | 2 | 40 | 2.1W | 2 | FET General Purpose Powers | 1.95 ns | 3.5ns | 4.6 ns | 8.2 ns | 3.2A | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 1V | 1.8W | 60V | 2 N-Channel (Dual) | 330pF @ 40V | 120m Ω @ 2.5A, 10V | 1V @ 250μA (Min) | 2.5A | 5.7nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||
| CSD88539NDT | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 8-SOIC (0.154, 3.90mm Width) | 4.9mm | 1.75mm | 3.91mm | Lead Free | 8 | 6 Weeks | 540.001716mg | No SVHC | 8 | ACTIVE (Last Updated: 4 days ago) | yes | 1.58mm | EAR99 | AVALANCHE RATED | Gold | e4 | 2.1W | GULL WING | 260 | CSD88539 | 2 | Dual | NOT SPECIFIED | 2 | 5 ns | 9ns | 4 ns | 14 ns | 15A | 20V | SILICON | SWITCHING | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 3V | 6.3A | 46A | 0.034Ohm | 2 N-Channel (Dual) | 741pF @ 30V | 28m Ω @ 5A, 10V | 3.6V @ 250μA | 9.4nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||
| TSM680P06DPQ56 RLG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/taiwansemiconductorcorporation-tsm680p06dpq56rlg-datasheets-5415.pdf | 8-PowerTDFN | 6 | 20 Weeks | YES | FLAT | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-F6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 3.5W | 12A | 48A | 0.068Ohm | 7.2 mJ | 2 P-Channel (Dual) | 870pF @ 30V | 68m Ω @ 6A, 10V | 2.5V @ 250μA | 12A Tc | 16.4nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMC8200 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdmc8200-datasheets-5399.pdf | 8-PowerWDFN | 3mm | 750μm | 3mm | Lead Free | 8 | 23 Weeks | 186mg | No SVHC | 20MOhm | 8 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | Gold | 900mW | NO LEAD | NOT SPECIFIED | Dual | NOT SPECIFIED | 2.2W | 2 | FET General Purpose Power | Not Qualified | 4ns | 6 ns | 38 ns | 8A | 20V | SILICON | DRAIN-SOURCE | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 2.3V | 700mW 900mW | 8A | 40A | 30 pF | 30V | 2 N-Channel (Dual) | 660pF @ 15V | 30ns | 2.3 V | 20m Ω @ 6A, 10V | 3V @ 250μA | 8A 12A | 10nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||
| NDS9945 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/onsemiconductor-nds9945-datasheets-5496.pdf | 60V | 3.5A | 8-SOIC (0.154, 3.90mm Width) | 4.9mm | 1.57mm | 3.9mm | Lead Free | 8 | 11 Weeks | 230.4mg | No SVHC | 100mOhm | 8 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | 1.6W | GULL WING | Dual | 1.6W | 2 | FET General Purpose Power | 5 ns | 7.5ns | 7 ns | 20 ns | 3.5A | 20V | 60V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 1.7V | 900mW | 10A | 60V | 2 N-Channel (Dual) | 345pF @ 25V | 1.7 V | 100m Ω @ 3.5A, 10V | 3V @ 250μA | 30nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||
| FDS89161LZ | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-fds89161lz-datasheets-5440.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9mm | 1.575mm | 3.9mm | 8 | 13 Weeks | 187mg | 8 | ACTIVE (Last Updated: 6 days ago) | yes | EAR99 | ULTRA-LOW RESISTANCE | No | e3 | Tin (Sn) | 1.6W | GULL WING | Dual | 31W | 2 | FET General Purpose Power | 3.8 ns | 10ns | 10 ns | 9.5 ns | 2.7A | 20V | SILICON | SWITCHING | 100V | METAL-OXIDE SEMICONDUCTOR | 15A | 0.105Ohm | 13 mJ | 100V | 2 N-Channel (Dual) | 302pF @ 50V | 105m Ω @ 2.7A, 10V | 2.2V @ 250μA | 5.3nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||
| SI4900DY-T1-E3 | Vishay Siliconix | $0.98 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si4900dyt1e3-datasheets-5430.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | 58mOhm | 8 | EAR99 | Tin | No | e3 | 2W | GULL WING | 260 | SI4900 | 8 | 2 | Dual | 40 | 2W | 2 | 10 ns | 15ns | 10 ns | 20 ns | 5.3A | 20V | SILICON | SWITCHING | 60V | METAL-OXIDE SEMICONDUCTOR | 3.1W | 60V | 2 N-Channel (Dual) | 665pF @ 15V | 58m Ω @ 4.3A, 10V | 3V @ 250μA | 20nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||
| FDS89161 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fds89161-datasheets-5481.pdf | 8-SOIC (0.154, 3.90mm Width) | 4mm | 1.5mm | 5mm | Lead Free | 8 | 11 Weeks | 187mg | No SVHC | 8 | ACTIVE (Last Updated: 6 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | 31W | GULL WING | Dual | 3.1W | 2 | FET General Purpose Power | 4.2 ns | 1.3ns | 1.9 ns | 7.3 ns | 2.7A | 20V | SILICON | SWITCHING | 100V | METAL-OXIDE SEMICONDUCTOR | 3V | 1.6W | 0.105Ohm | 5 pF | 100V | 2 N-Channel (Dual) | 210pF @ 50V | 105m Ω @ 2.7A, 10V | 4V @ 250μA | 4.1nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||
| IRF7311TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf7311trpbf-datasheets-5406.pdf | 20V | 6.6A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Lead Free | 8 | 12 Weeks | No SVHC | 29mOhm | 8 | EAR99 | AVALANCHE RATED, ULTRA LOW RESISTANCE | No | e3 | Matte Tin (Sn) | 2W | GULL WING | IRF7311PBF | Dual | 2W | 2 | 8.1 ns | 17ns | 31 ns | 38 ns | 6.6A | 12V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 700mV | 77 ns | 100 mJ | 20V | 2 N-Channel (Dual) | 900pF @ 15V | 29m Ω @ 6A, 4.5V | 700mV @ 250μA | 27nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||
| FDS6990AS | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench®, SyncFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/onsemiconductor-fds6990as-datasheets-5222.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.75mm | 4mm | Lead Free | 8 | 10 Weeks | 187mg | No SVHC | 22mOhm | 8 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | e3 | Tin (Sn) | 900mW | GULL WING | 260 | 2 | Dual | 30 | 2W | 2 | FET General Purpose Power | Not Qualified | 150°C | 8 ns | 8ns | 8 ns | 24 ns | 7.5mA | 20V | 30V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 1.7V | 7.5A | 30V | 2 N-Channel (Dual) | 550pF @ 15V | 1.7 V | 22m Ω @ 7.5A, 10V | 3V @ 1mA | 7.5A | 14nC @ 5V | Logic Level Gate | ||||||||||||||||||||||||||||||||
| DMN4034SSD-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/diodesincorporated-dmn4034ssd13-datasheets-4863.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 17 Weeks | 73.992255mg | No SVHC | 8 | yes | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | 1.8W | GULL WING | 260 | DMN4034SSD | 8 | Dual | 40 | 2.14W | 2 | FET General Purpose Power | 2.7 ns | 2.7ns | 6 ns | 14 ns | 4.8A | 20V | SILICON | SWITCHING | 40V | 40V | METAL-OXIDE SEMICONDUCTOR | 6.3A | 0.034Ohm | 2 N-Channel (Dual) | 453pF @ 20V | 34m Ω @ 6A, 10V | 3V @ 250μA | 18nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||
| BUK9K52-60E,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/nexperiausainc-buk9k5260e115-datasheets-4894.pdf | SOT-1205, 8-LFPAK56 | 4 | 12 Weeks | 8 | EAR99 | AVALANCHE RATED | Tin | not_compliant | e3 | AEC-Q101; IEC-60134 | YES | 32W | SINGLE | GULL WING | 260 | 8 | 2 | Dual | 20 | 32W | 2 | R-PSSO-G4 | 6.2 ns | 10.1ns | 9 ns | 10.7 ns | 16A | 10V | 60V | SILICON | DRAIN | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 64A | 0.055Ohm | 11.9 mJ | 2 N-Channel (Dual) | 725pF @ 25V | 49m Ω @ 5A, 10V | 2.1V @ 1mA | 10nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||
| NVMFD5C680NLT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2013 | /files/onsemiconductor-nvmfd5c680nlt1g-datasheets-5075.pdf | 8-PowerTDFN | 48 Weeks | ACTIVE (Last Updated: 2 days ago) | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 60V | 3W Ta 19W Tc | 2 N-Channel (Dual) | 350pF @ 25V | 28m Ω @ 5A, 10V | 2.2V @ 13μA | 7.5A Ta 26A Tc | 2nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7101TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/infineontechnologies-irf7101trpbf-datasheets-5097.pdf | 20V | 3.5A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Lead Free | 8 | 12 Weeks | No SVHC | 100mOhm | 8 | EAR99 | No | 2W | e3 | Matte Tin (Sn) | 2W | GULL WING | IRF7101PBF | Dual | 2W | 2 | FET General Purpose Power | 7 ns | 10ns | 30 ns | 24 ns | 3.5A | 12V | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 6.3 mm | 3V | 14A | 20V | 2 N-Channel (Dual) | 320pF @ 15V | 3 V | 100m Ω @ 1.8A, 10V | 3V @ 250μA | 15nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||
| SI4590DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4590dyt1ge3-datasheets-5123.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 14 Weeks | 183mOhm | EAR99 | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | 260 | 8 | 30 | 2 | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | 100V | 100V | METAL-OXIDE SEMICONDUCTOR | 2.4W 3.4W | 5.6A | N and P-Channel | 360pF @ 50V | 57m Ω @ 2A, 10V | 2.5V @ 250μA | 3.4A 2.8A | 11.5nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| FDS9934C | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/onsemiconductor-fds9934c-datasheets-5125.pdf | 6.5A | 8-SOIC (0.154, 3.90mm Width) | 4.9mm | 1.575mm | 3.9mm | Lead Free | 8 | 18 Weeks | 187mg | No SVHC | 30MOhm | 8 | ACTIVE (Last Updated: 5 hours ago) | yes | EAR99 | No | e3 | Tin (Sn) | 2W | DUAL | GULL WING | 2W | 2 | Other Transistors | 16 ns | 9ns | 9 ns | 25 ns | 6.5A | 12V | 20V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 1V | 900mW | 20V | N and P-Channel | 650pF @ 10V | 1 V | 30m Ω @ 6.5A, 4.5V | 1.5V @ 250μA | 6.5A 5A | 9nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||
| AOSD62666E | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | 8-SOIC (0.154, 3.90mm Width) | 18 Weeks | 60V | 2.5W Ta | 2 N-Channel (Dual) | 755pF @ 30V | 14.5m Ω @ 9.5A, 10V | 2.2V @ 250μA | 9.5A Ta | 10nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ZXMC3AMCTA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/diodesincorporated-zxmc3amcta-datasheets-5179.pdf | 8-WDFN Exposed Pad | 3.08mm | 780μm | 2.075mm | Lead Free | 8 | 17 Weeks | No SVHC | 210mOhm | 8 | yes | EAR99 | HIGH RELIABILITY | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 1.7W | DUAL | 260 | 8 | 40 | 2.45W | 2 | Other Transistors | 1.5 ns | 2.8ns | 7.5 ns | 11.3 ns | 2.1A | 20V | SILICON | DRAIN | SWITCHING | N-CHANNEL AND P-CHANNEL | 30V | METAL-OXIDE SEMICONDUCTOR | 3.7A | 13A | -30V | N and P-Channel | 190pF @ 25V | 120m Ω @ 2.5A, 10V | 3V @ 250μA | 2.9A 2.1A | 3.9nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||
| IRF7307TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/infineontechnologies-irf7307trpbf-datasheets-5044.pdf | 5.2A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Lead Free | 8 | 12 Weeks | No SVHC | 50mOhm | 8 | EAR99 | ULTRA LOW RESISTANCE | No | e3 | Matte Tin (Sn) | 2W | DUAL | GULL WING | IRF7307PBF | 2W | 2 | 26ns | 33 ns | 51 ns | 5.2A | 12V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 700mV | 20V | N and P-Channel | 660pF @ 15V | 700 mV | 50m Ω @ 2.6A, 4.5V | 700mV @ 250μA | 5.2A 4.3A | 20nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||
| TSM6866SDCA RVG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 3 (168 Hours) | ROHS3 Compliant | 2015 | /files/taiwansemiconductorcorporation-tsm6866sdcarvg-datasheets-5135.pdf | 8-TSSOP (0.173, 4.40mm Width) | 18 Weeks | 8-TSSOP | 20V | 1.6W | 2 N-Channel (Dual) | 565pF @ 8V | 30mOhm @ 6A, 4.5V | 600mV @ 250μA | 6A Ta | 5nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTLUD3A50PZTAG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2014 | /files/onsemiconductor-ntlud3a50pztag-datasheets-5173.pdf | 6-UDFN Exposed Pad | 2mm | 500μm | 2mm | Lead Free | 8 Weeks | 6 | ACTIVE (Last Updated: 6 days ago) | yes | EAR99 | e3 | Tin (Sn) | YES | 500mW | 6 | Dual | 1.4W | 2 | Other Transistors | 7 ns | 39 ns | 2.8A | 8V | 20V | METAL-OXIDE SEMICONDUCTOR | 4.4A | 2 P-Channel (Dual) | 920pF @ 15V | 50m Ω @ 4A, 4.5V | 1V @ 250μA | 10.4nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5504BDC-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | 8-SMD, Flat Lead | Lead Free | 8 | 14 Weeks | 84.99187mg | Unknown | 140mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 3.1W | DUAL | C BEND | 260 | SI5504 | 8 | 2 | 30 | 1.5W | 2 | Other Transistors | 3.7A | 20V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 3.12W 3.1W | 4A | 10A | 30V | N and P-Channel | 220pF @ 15V | 1.5 V | 65m Ω @ 3.1A, 10V | 3V @ 250μA | 4A 3.7A | 7nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||
| SI7223DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen III | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-si7223dnt1ge3-datasheets-5177.pdf | PowerPAK® 1212-8 Dual | 14 Weeks | PowerPAK® 1212-8 Dual | 30V | 2.6W Ta 23W Tc | 2 P-Channel (Dual) | 1425pF @ 15V | 26.4mOhm @ 8A, 10V | 2.5V @ 250μA | 6A Tc | 40nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5515CDC-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si5515cdct1e3-datasheets-6614.pdf | 8-SMD, Flat Lead | Lead Free | 8 | 14 Weeks | 84.99187mg | Unknown | 8 | EAR99 | No | e3 | PURE MATTE TIN | 3.1W | DUAL | C BEND | 260 | SI5515 | 8 | 30 | 1.3W | 2 | 4A | 8V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | 20V | METAL-OXIDE SEMICONDUCTOR | 400mV | 4A | 0.036Ohm | N and P-Channel | 632pF @ 10V | 36m Ω @ 6A, 4.5V | 800mV @ 250μA | 11.3nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||
| CSD87502Q2T | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 6-WDFN Exposed Pad | 2mm | 2mm | Lead Free | 6 | 12 Weeks | No SVHC | 6 | ACTIVE (Last Updated: 6 days ago) | yes | 750μm | AVALANCHE RATED | e3 | Matte Tin (Sn) | 2.3W | NO LEAD | CSD87502 | Dual | 2 | 5A | SILICON | DRAIN | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 1.6V | 5A | 23A | 29 pF | 3.1 mJ | 2 N-Channel (Dual) | 353pF @ 15V | 32.4m Ω @ 4A, 10V | 2V @ 250μA | 6nC @ 10V | Logic Level Gate, 5V Drive | ||||||||||||||||||||||||||||||||||||||||||||||
| SI3552DV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si3552dvt1e3-datasheets-4526.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | 14 Weeks | 19.986414mg | Unknown | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.15W | DUAL | GULL WING | 260 | SI3552 | 6 | 2 | 30 | 1.15W | 1 | Other Transistors | 2.5A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | N-CHANNEL AND P-CHANNEL | 30V | METAL-OXIDE SEMICONDUCTOR | 1V | 0.105Ohm | 30V | N and P-Channel | 1 V | 105m Ω @ 2.5A, 10V | 1V @ 250μA (Min) | 3.2nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||
| NDS9948 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/onsemiconductor-nds9948-datasheets-4787.pdf | -60V | -2.3A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 20 Weeks | 187mg | No SVHC | 8 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | 2W | GULL WING | Dual | 2W | 2 | Other Transistors | 6 ns | 9ns | 3 ns | 16 ns | 2.3A | 20V | SILICON | SWITCHING | 60V | METAL-OXIDE SEMICONDUCTOR | -1.5V | 900mW | 10A | 15 mJ | -60V | 2 P-Channel (Dual) | 394pF @ 30V | -1.5 V | 250m Ω @ 2.3A, 10V | 3V @ 250μA | 13nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||
| FDS8984 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/onsemiconductor-fds8984-datasheets-4474.pdf | 30V | 7A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 10 Weeks | 187mg | No SVHC | 23MOhm | 8 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | Tin | No | e3 | 1.6W | GULL WING | Dual | 1.6W | 2 | FET General Purpose Power | 5 ns | 9ns | 9 ns | 42 ns | 7mA | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 1.7V | 7A | 30A | 30V | 2 N-Channel (Dual) | 635pF @ 15V | 1.7 V | 23m Ω @ 7A, 10V | 2.5V @ 250μA | 13nC @ 10V | Logic Level Gate |
