Products
Manufacturer
RFQ
NEWS
ContactMOSFETs Transistors Arrays(4365)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | Number of Functions | Max Input Voltage | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Terminal Pitch | Base Part Number | Pin Count | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Supply Current-Max (Isup) | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Max Output Current | Max Output Voltage | Output Type | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Number of Outputs | Threshold Voltage | Power - Max | Input Voltage-Nom | Input Voltage (Max) | Efficiency | Control Technique | Switcher Configuration | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Switching Frequency-Max | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| CSD88537NDT | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 8-SOIC (0.154, 3.90mm Width) | 4.9mm | 1.75mm | 3.91mm | Lead Free | 8 | 6 Weeks | 540.001716mg | No SVHC | 8 | ACTIVE (Last Updated: 4 days ago) | yes | 1.58mm | EAR99 | AVALANCHE RATED | Gold | e4 | 2.1W | GULL WING | 260 | CSD88537 | 2 | Dual | NOT SPECIFIED | 2.1W | 2 | 150°C | 6 ns | 15ns | 19 ns | 5 ns | 8A | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 3V | 8A | 0.019Ohm | 60V | 2 N-Channel (Dual) | 1400pF @ 30V | 15m Ω @ 8A, 10V | 3.6V @ 250μA | 15A | 18nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||
| IRFHS9351TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-irfhs9351trpbf-datasheets-6693.pdf | 6-VQFN Exposed Pad | Lead Free | 6 | 12 Weeks | No SVHC | 6 | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | 1.4W | IRFHS9351PBF | Dual | 1.4W | 2 | Other Transistors | 8.3 ns | 30ns | 7.9 ns | 6.3 ns | 2.3A | 20V | SILICON | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | -1.8V | 5.1A | 0.17Ohm | -30V | 2 P-Channel (Dual) | 160pF @ 25V | -1.8 V | 170m Ω @ 3.1A, 10V | 2.4V @ 10μA | 3.7nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD87335Q3D | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 8-PowerLDFN | 3.3mm | 3.3mm | Contains Lead | 8 | 6 Weeks | 8 | ACTIVE (Last Updated: 6 days ago) | yes | 1.5mm | EAR99 | not_compliant | 1 | e3 | Matte Tin (Sn) | 6W | NO LEAD | 0.65mm | CSD87335 | SWITCHING CONTROLLER | 20mA | 30V | 12V | 27V | PULSE WIDTH MODULATION | BUCK | 1500kHz | 2 N-Channel (Dual) Asymmetrical | 1050pF @ 15V | 1.9V @ 250μA | 7.4nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7220DN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si7220dnt1ge3-datasheets-1978.pdf | PowerPAK® 1212-8 Dual | 3.05mm | 1.04mm | 3.05mm | Lead Free | 6 | 14 Weeks | 60mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.3W | C BEND | 260 | SI7220 | 8 | Dual | 40 | 1.3W | 2 | FET General Purpose Powers | S-XDSO-C6 | 10 ns | 10ns | 10 ns | 20 ns | 4.8A | 20V | SILICON | DRAIN | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 3.4A | 6.1 mJ | 60V | 2 N-Channel (Dual) | 60m Ω @ 4.8A, 10V | 3V @ 250μA | 3.4A | 20nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||
| TC6320TG-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/microchiptechnology-tc6320k6g-datasheets-1076.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9mm | 1.65mm | 3.9mm | 8 | 6 Weeks | 84.99187mg | No SVHC | 8 | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | TC6320 | 2 | 40 | 2 | Other Transistors | 10 ns | 15ns | 15 ns | 20 ns | -2A | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 2V | 7Ohm | 200V | N and P-Channel | 110pF @ 25V | 7 Ω @ 1A, 10V | 2V @ 1mA | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7288DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si7288dpt1ge3-datasheets-6861.pdf | PowerPAK® SO-8 Dual | Lead Free | 6 | 14 Weeks | Unknown | 19mOhm | 8 | yes | EAR99 | Tin | No | PowerPAKSO-8 | e3 | 15.6W | C BEND | 260 | SI7288 | 8 | 2 | Dual | 40 | 3.6W | 2 | FET General Purpose Powers | R-XDSO-C6 | 12 ns | 14ns | 10 ns | 16 ns | 20A | 20V | SILICON | DRAIN | SWITCHING | 40V | METAL-OXIDE SEMICONDUCTOR | 2.8V | 10A | 50A | 5 mJ | 40V | 2 N-Channel (Dual) | 565pF @ 20V | 1.2 V | 19m Ω @ 10A, 10V | 2.8V @ 250μA | 15nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||
| CSD87330Q3D | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ROHS3 Compliant | 8-PowerLDFN | 3.3mm | 1.5mm | 3.3mm | Contains Lead | 8 | 12 Weeks | No SVHC | 8 | ACTIVE (Last Updated: 1 day ago) | yes | 1.5mm | EAR99 | Gold | No | 1 | 27V | e3 | Matte Tin (Sn) | 6W | 260 | 0.65mm | CSD87330 | 8 | SWITCHING CONTROLLER | Dual | 6W | 20mA | 15A | 1.2V | Adjustable | 7.5ns | 1.6 ns | 9.1 ns | 20A | 1.15V | 30V | 1 | 1V | 12V | 90 % | PUSH-PULL | 30V | 2 N-Channel (Half Bridge) | 900pF @ 15V | 2.1V @ 250μA | 5.8nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||
| IRF7351TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-irf7351trpbf-datasheets-6966.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Lead Free | 8 | 12 Weeks | 8 | EAR99 | No | e3 | Matte Tin (Sn) | 2W | GULL WING | IRF7351PBF | Dual | 2W | 2 | FET General Purpose Power | 5.1 ns | 5.9ns | 6.7 ns | 17 ns | 8A | 20V | SILICON | SWITCHING | 60V | METAL-OXIDE SEMICONDUCTOR | 8A | 64A | 60V | 2 N-Channel (Dual) | 1330pF @ 30V | 17.8m Ω @ 8A, 10V | 4V @ 50μA | 36nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMC3028LSDXQ-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/diodesincorporated-dmc3028lsdxq13-datasheets-6747.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 7 Weeks | 8 | EAR99 | HIGH RELIABILITY | e3 | Matte Tin (Sn) | AEC-Q101 | 1.2W | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | 5.8A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 5.5A | 0.027Ohm | N and P-Channel | 641pF @ 15V | 27m Ω @ 6A, 10V | 3V @ 250μA | 5.5A 5.8A | 13.2nC @ 5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTHD4502NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/onsemiconductor-nthd4502nt1g-datasheets-6759.pdf | 30V | 2.9A | 8-SMD, Flat Lead | 3.1mm | 1.1mm | 1.7mm | Lead Free | 8 | 2 Weeks | 4.535924g | 80MOhm | 8 | ACTIVE (Last Updated: 10 hours ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | 640mW | C BEND | 260 | NTHD4502N | 8 | Dual | 40 | 1.13W | 2 | FET General Purpose Power | 7.8 ns | 5.4ns | 5.4 ns | 14.9 ns | 3.9A | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | -20V | 2 N-Channel (Dual) | 140pF @ 15V | 85m Ω @ 2.9A, 10V | 3V @ 250μA | 2.2A | 7nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||
| FDZ1416NZ | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdz1416nz-datasheets-6750.pdf | 4-XFBGA, WLCSP | 1.6mm | 150μm | 1.4mm | 4 | 10 Weeks | 22.24mg | 4 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 1.7W | BOTTOM | BALL | NOT SPECIFIED | 1 | NOT SPECIFIED | 1.7W | 2 | FET General Purpose Power | 1.14nF | 9.5 ns | 12ns | 16 ns | 37 ns | 7A | 12V | SILICON | SWITCHING | 24V | METAL-OXIDE SEMICONDUCTOR | 500mW | 7A | 23mOhm | 2 N-Channel (Dual) Common Drain | 1.3V @ 250μA | 17nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| UT6K3TCR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | 6-PowerUDFN | 6 | 20 Weeks | EAR99 | not_compliant | YES | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 2 | S-PDSO-N6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 2W | 5.5A | 12A | 0.042Ohm | 2.4 mJ | 2 N-Channel (Dual) | 450pF @ 15V | 42m Ω @ 5A, 4.5V | 1.5V @ 1mA | 5.5A | 4nC @ 4.5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLHS6276TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-irlhs6276trpbf-datasheets-6645.pdf | 6-VQFN | Lead Free | 6 | 12 Weeks | No SVHC | 45MOhm | 6 | EAR99 | No | e3 | Matte Tin (Sn) | 1.5W | 260 | IRLHS6276PBF | Dual | 30 | 1.5W | 2 | FET General Purpose Power | 4.4 ns | 9.3ns | 4.9 ns | 10 ns | 4.5A | 12V | SILICON | DRAIN | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 3.4A | 20V | 2 N-Channel (Dual) | 310pF @ 10V | 800 mV | 45m Ω @ 3.4A, 4.5V | 1.1V @ 10μA | 3.1nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7998DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7998dpt1ge3-datasheets-6807.pdf | PowerPAK® SO-8 Dual | 4.9mm | 1.04mm | 5.89mm | Lead Free | 6 | 14 Weeks | 506.605978mg | 9.3mOhm | 8 | yes | EAR99 | No | e3 | MATTE TIN | 40W | C BEND | 260 | 8 | 2 | 30 | 2 | FET General Purpose Power | R-XDSO-C6 | 26 ns | 17ns | 10 ns | 35 ns | 30A | 20V | SILICON | DRAIN | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 22W 40W | 15A | 60A | 30V | 2 N-Channel (Dual) | 1100pF @ 15V | 9.3m Ω @ 15A, 10V | 2.5V @ 250μA | 25A 30A | 26nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||
| MTM78E2B0LBF | Panasonic Electronic Components |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2011 | /files/panasonicelectroniccomponents-mtm78e2b0lbf-datasheets-6743.pdf | 8-SMD, Flat Lead | 2mm | 600μm | 1.7mm | 8 | 10 Weeks | No SVHC | 8 | EAR99 | unknown | 700mW | NOT SPECIFIED | MTM78E2B | Single | NOT SPECIFIED | 700mW | 2 | FET General Purpose Power | 200 ns | 500ns | 1.5 μs | 2 μs | 4A | 12V | SILICON | SWITCHING | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 150mW | 4A | 0.025Ohm | 2 N-Channel (Dual) | 1100pF @ 10V | 850 mV | 25m Ω @ 2A, 4V | 1.3V @ 1mA | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ZXMN6A25DN8TA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/diodesincorporated-zxmn6a25dn8ta-datasheets-6142.pdf | 60V | 4.7A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 17 Weeks | 73.992255mg | No SVHC | 500mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 2.1W | GULL WING | 260 | 8 | 2 | 40 | 2.1W | 2 | 3.8 ns | 4ns | 10.6 ns | 26.2 ns | 5A | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 1.8W | 3.6A | 60V | 2 N-Channel (Dual) | 1063pF @ 30V | 50m Ω @ 3.6A, 10V | 1V @ 250μA (Min) | 3.8A | 20.4nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||
| FDS89141 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/onsemiconductor-fds89141-datasheets-6832.pdf | 8-SOIC (0.154, 3.90mm Width) | 4mm | 1.5mm | 5mm | Lead Free | 8 | 11 Weeks | 187mg | No SVHC | 62MOhm | 8 | ACTIVE (Last Updated: 6 days ago) | yes | EAR99 | ULTRA-LOW RESISTANCE | No | e3 | Tin (Sn) | 31W | GULL WING | Dual | 31W | 2 | FET General Purpose Power | 5 ns | 1.4ns | 2.2 ns | 9.8 ns | 3.5A | 20V | SILICON | SWITCHING | 100V | METAL-OXIDE SEMICONDUCTOR | 3.1V | 1.6W | 37 mJ | 100V | 2 N-Channel (Dual) | 398pF @ 50V | 62m Ω @ 3.5A, 10V | 4V @ 250μA | 7.1nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||
| TSM4936DCS RLG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 3 (168 Hours) | ROHS3 Compliant | 2015 | /files/taiwansemiconductorcorporation-tsm4936dcsrlg-datasheets-6851.pdf | 8-SOIC (0.154, 3.90mm Width) | 20 Weeks | 8-SOP | 30V | 3W | 2 N-Channel (Dual) | 610pF @ 15V | 36mOhm @ 5.9A, 10V | 3V @ 250μA | 5.9A Ta | 13nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ECH8690-TL-H | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-ech8690tlh-datasheets-6740.pdf | 8-SMD, Flat Lead | Lead Free | 21 Weeks | 8 | ACTIVE (Last Updated: 6 days ago) | yes | EAR99 | No | e6 | Tin/Bismuth (Sn/Bi) | YES | 1.5W | 8 | Dual | 1.8W | 2 | Other Transistors | 3.5A | 20V | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 4.7A | 60V | N and P-Channel | 955pF @ 20V | 55m Ω @ 2A, 10V | 4.7A 3.5A | 18nC @ 10V | Logic Level Gate, 4V Drive | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM6968SDCA RVG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 3 (168 Hours) | ROHS3 Compliant | 2015 | /files/taiwansemiconductorcorporation-tsm6968sdcarvg-datasheets-6871.pdf | 8-TSSOP (0.173, 4.40mm Width) | 20 Weeks | 8-TSSOP | 20V | 1.04W | 2 N-Channel (Dual) | 950pF @ 10V | 22mOhm @ 6.5A, 4.5V | 1V @ 250μA | 6.5A Ta | 15nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTHD3102CT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/onsemiconductor-nthd3102ct1g-datasheets-6603.pdf | 20V | 5.5A | 8-SMD, Flat Lead | 3.1mm | 1.1mm | 1.7mm | Lead Free | 8 | 7 Weeks | 4.535924g | No SVHC | 8 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | 600mW | C BEND | 260 | NTHD3102C | 8 | Dual | 40 | 600mW | 2 | 7.2 ns | 16.9ns | 16.9 ns | 15.7 ns | 5.5A | 8V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 400mV | 1.1W | 4A | 16A | 0.045Ohm | -20V | N and P-Channel | 510pF @ 10V | 45m Ω @ 4.4A, 4.5V | 1.2V @ 250μA | 4A 3.1A | 7.9nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||
| SI5936DU-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si5936dut1ge3-datasheets-6643.pdf | PowerPAK® ChipFET™ Dual | 3.08mm | 850μm | 1.98mm | 6 | 14 Weeks | 8 | EAR99 | Tin | 2.3W | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 2.3W | 2 | R-PDSO-N6 | 15 ns | 65ns | 10 ns | 15 ns | 6A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 10.4W | 6A | 0.03Ohm | 2 N-Channel (Dual) | 320pF @ 15V | 30m Ω @ 5A, 10V | 2.2V @ 250μA | 11nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| UT6JA2TCR | ROHM Semiconductor | $3.07 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 6-PowerUDFN | 6 | 20 Weeks | EAR99 | not_compliant | YES | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 2 | S-PDSO-N6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 2W | 4A | 12A | 0.103Ohm | 6.5 mJ | 2 P-Channel (Dual) | 305pF @ 15V | 70m Ω @ 4A, 10V | 2.5V @ 1mA | 4A | 6.7nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CJ3139KDW-G | Comchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/comchiptechnology-cj3139kdwg-datasheets-6143.pdf | 6-TSSOP, SC-88, SOT-363 | 12 Weeks | yes | 150mW | NOT SPECIFIED | NOT SPECIFIED | 660mA | 20V | 2 P-Channel (Dual) | 170pF @ 16V | 520m Ω @ 1A, 4.5V | 1.1V @ 250μA | 660mA Ta | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6L61NU,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Base | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2015 | 6-WDFN Exposed Pad | 6 | 12 Weeks | unknown | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 2 | S-PDSO-N6 | 4A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 4A | 0.033Ohm | N and P-Channel | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CMLDM7484 TR PBFREE | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -65°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/centralsemiconductorcorp-cmldm7484trpbfree-datasheets-6432.pdf | SOT-563, SOT-666 | 24 Weeks | YES | Other Transistors | N-CHANNEL AND P-CHANNEL | 0.35W | 30V | METAL-OXIDE SEMICONDUCTOR | 150mW | 0.45A | N and P-Channel Complementary | 45pF @ 25V | 460m Ω @ 200mA, 4.5V | 1V @ 250μA | 450mA | 0.79nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTZD3154NT5G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-ntzd3154nt1g-datasheets-3038.pdf | 20V | 540mA | SOT-563, SOT-666 | Lead Free | 6 | 10 Weeks | 400MOhm | 6 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | 250mW | FLAT | 260 | NTZD3154N | 6 | Dual | 40 | 250mW | 2 | FET General Purpose Power | 6 ns | 4ns | 4 ns | 16 ns | 540mA | 6V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 0.54A | 20 pF | 20V | 2 N-Channel (Dual) | 150pF @ 16V | 550m Ω @ 540mA, 4.5V | 1V @ 250μA | 2.5nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||
| QS6J11TR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/rohmsemiconductor-qs6j11tr-datasheets-6460.pdf | SOT-23-6 Thin, TSOT-23-6 | Lead Free | 8 | 20 Weeks | 6 | yes | EAR99 | No | e1 | 600mW | GULL WING | 260 | *J11 | 6 | 2 | Dual | 10 | 1 | Other Transistors | R-PDSO-G8 | 10 ns | 17ns | 35 ns | 65 ns | 2A | 10V | SILICON | SWITCHING | 12V | METAL-OXIDE SEMICONDUCTOR | 2A | 8A | 0.105Ohm | 2 P-Channel (Dual) | 770pF @ 6V | 105m Ω @ 2A, 4.5V | 1V @ 1mA | 6.5nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5513CDC-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si5513cdct1ge3-datasheets-6399.pdf | 8-SMD, Flat Lead | Lead Free | 8 | 14 Weeks | 84.99187mg | Unknown | 150mOhm | 8 | EAR99 | Tin | No | e3 | 3.1W | DUAL | C BEND | 260 | SI5513 | 8 | 2 | 30 | 1.7W | 2 | 4A | 12V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 4A | 20V | N and P-Channel | 285pF @ 10V | 600 mV | 55m Ω @ 4.4A, 4.5V | 1.5V @ 250μA | 4A 3.7A | 4.2nC @ 5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTHC5513T1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/onsemiconductor-nthc5513t1g-datasheets-6522.pdf | 20V | 3.1A | 8-SMD, Flat Lead | 3.1mm | 1.1mm | 1.7mm | Lead Free | 8 | 2 Weeks | 4.535924g | No SVHC | 8 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | 1.1W | C BEND | 260 | NTHC5513 | 8 | Dual | 40 | 1.1W | 2 | Other Transistors | 7 ns | 13ns | 33 ns | 3.9A | 12V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 600mV | 10A | -20V | N and P-Channel | 180pF @ 10V | 600 mV | 80m Ω @ 2.9A, 4.5V | 1.2V @ 250μA | 2.9A 2.2A | 4nC @ 4.5V | Logic Level Gate |
