Products
Manufacturer
RFQ
NEWS
ContactMOSFETs Transistors Arrays(4365)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | Number of Functions | JESD-609 Code | Terminal Finish | Voltage | Reference Standard | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Terminal Pitch | Base Part Number | Pin Count | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Supply Current-Max (Isup) | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Output Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | Input Voltage-Nom | Input Voltage (Max) | Control Technique | Switcher Configuration | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Switching Frequency-Max | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| EPC2106 | EPC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eGaN® | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/epc-epc2106engrt-datasheets-9551.pdf | Die | 14 Weeks | Die | 100V | 2 N-Channel (Half Bridge) | 75pF @ 50V | 70mOhm @ 2A, 5V | 2.5V @ 600μA | 1.7A | 0.73nC @ 5V | GaNFET (Gallium Nitride) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STS8C5H30L | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ III | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-sts8c5h30l-datasheets-7026.pdf | 8A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.25mm | 4mm | Lead Free | 8 | No SVHC | 22MOhm | 8 | NRND (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) | 2W | DUAL | GULL WING | 260 | STS8C5 | 8 | 30 | 2W | 2 | Other Transistors | 35ns | 35 ns | 125 ns | 8A | 16V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 1.6V | 8A | 30V | N and P-Channel | 857pF @ 25V | 22m Ω @ 4A, 10V | 1V @ 250μA | 8A 5.4A | 10nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||
| FDMS3620S | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdms3620s-datasheets-7056.pdf | 8-PowerTDFN | 5.1mm | 1.05mm | 6.1mm | Lead Free | 6 | 18 Weeks | 90mg | 8 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | 1W | FDMS3620S | Dual | 2.5W | 2 | FET General Purpose Power | R-PDSO-N6 | 41 ns | 38A | 12V | SILICON | DRAIN SOURCE | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 17.5A | 0.0047Ohm | 25V | 2 N-Channel (Dual) Asymmetrical | 1570pF @ 13V | 4.7m Ω @ 17.5A, 10V | 2V @ 250μA | 17.5A 38A | 26nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD87352Q5D | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ROHS3 Compliant | 8-PowerLDFN | 5mm | 6mm | Contains Lead | 8 | 12 Weeks | No SVHC | 8 | ACTIVE (Last Updated: 1 week ago) | yes | 1.5mm | EAR99 | No | 1 | e3 | Matte Tin (Sn) | 8.5W | 260 | 1.27mm | CSD87352 | 8 | SWITCHING CONTROLLER | Dual | 8.5W | 1.3V | 7ns | 2.7 ns | 25A | 8V | 30V | 12V | 27V | BUCK | 30V | 2 N-Channel (Dual) | 1800pF @ 15V | 1.15V @ 250μA | 12.5nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDS3890 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/onsemiconductor-fds3890-datasheets-6919.pdf | 80V | 4.7A | 8-SOIC (0.154, 3.90mm Width) | 4.9mm | 1.575mm | 3.9mm | Lead Free | 8 | 21 Weeks | No SVHC | 44MOhm | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | 47A | e3 | TIN | 80V | 2W | GULL WING | 260 | 30 | 2W | 2 | FET General Purpose Power | 11 ns | 8ns | 12 ns | 26 ns | 4.7A | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 2.3V | 900mW | 175 mJ | 80V | 2 N-Channel (Dual) | 1180pF @ 40V | 44m Ω @ 4.7A, 10V | 4V @ 250μA | 35nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||
| CSD88537NDT | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 8-SOIC (0.154, 3.90mm Width) | 4.9mm | 1.75mm | 3.91mm | Lead Free | 8 | 6 Weeks | 540.001716mg | No SVHC | 8 | ACTIVE (Last Updated: 4 days ago) | yes | 1.58mm | EAR99 | AVALANCHE RATED | Gold | e4 | 2.1W | GULL WING | 260 | CSD88537 | 2 | Dual | NOT SPECIFIED | 2.1W | 2 | 150°C | 6 ns | 15ns | 19 ns | 5 ns | 8A | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 3V | 8A | 0.019Ohm | 60V | 2 N-Channel (Dual) | 1400pF @ 30V | 15m Ω @ 8A, 10V | 3.6V @ 250μA | 15A | 18nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||
| IRFHS9351TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-irfhs9351trpbf-datasheets-6693.pdf | 6-VQFN Exposed Pad | Lead Free | 6 | 12 Weeks | No SVHC | 6 | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | 1.4W | IRFHS9351PBF | Dual | 1.4W | 2 | Other Transistors | 8.3 ns | 30ns | 7.9 ns | 6.3 ns | 2.3A | 20V | SILICON | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | -1.8V | 5.1A | 0.17Ohm | -30V | 2 P-Channel (Dual) | 160pF @ 25V | -1.8 V | 170m Ω @ 3.1A, 10V | 2.4V @ 10μA | 3.7nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD87335Q3D | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 8-PowerLDFN | 3.3mm | 3.3mm | Contains Lead | 8 | 6 Weeks | 8 | ACTIVE (Last Updated: 6 days ago) | yes | 1.5mm | EAR99 | not_compliant | 1 | e3 | Matte Tin (Sn) | 6W | NO LEAD | 0.65mm | CSD87335 | SWITCHING CONTROLLER | 20mA | 30V | 12V | 27V | PULSE WIDTH MODULATION | BUCK | 1500kHz | 2 N-Channel (Dual) Asymmetrical | 1050pF @ 15V | 1.9V @ 250μA | 7.4nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDS89141 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/onsemiconductor-fds89141-datasheets-6832.pdf | 8-SOIC (0.154, 3.90mm Width) | 4mm | 1.5mm | 5mm | Lead Free | 8 | 11 Weeks | 187mg | No SVHC | 62MOhm | 8 | ACTIVE (Last Updated: 6 days ago) | yes | EAR99 | ULTRA-LOW RESISTANCE | No | e3 | Tin (Sn) | 31W | GULL WING | Dual | 31W | 2 | FET General Purpose Power | 5 ns | 1.4ns | 2.2 ns | 9.8 ns | 3.5A | 20V | SILICON | SWITCHING | 100V | METAL-OXIDE SEMICONDUCTOR | 3.1V | 1.6W | 37 mJ | 100V | 2 N-Channel (Dual) | 398pF @ 50V | 62m Ω @ 3.5A, 10V | 4V @ 250μA | 7.1nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||
| TSM4936DCS RLG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 3 (168 Hours) | ROHS3 Compliant | 2015 | /files/taiwansemiconductorcorporation-tsm4936dcsrlg-datasheets-6851.pdf | 8-SOIC (0.154, 3.90mm Width) | 20 Weeks | 8-SOP | 30V | 3W | 2 N-Channel (Dual) | 610pF @ 15V | 36mOhm @ 5.9A, 10V | 3V @ 250μA | 5.9A Ta | 13nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ECH8690-TL-H | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-ech8690tlh-datasheets-6740.pdf | 8-SMD, Flat Lead | Lead Free | 21 Weeks | 8 | ACTIVE (Last Updated: 6 days ago) | yes | EAR99 | No | e6 | Tin/Bismuth (Sn/Bi) | YES | 1.5W | 8 | Dual | 1.8W | 2 | Other Transistors | 3.5A | 20V | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 4.7A | 60V | N and P-Channel | 955pF @ 20V | 55m Ω @ 2A, 10V | 4.7A 3.5A | 18nC @ 10V | Logic Level Gate, 4V Drive | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM6968SDCA RVG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 3 (168 Hours) | ROHS3 Compliant | 2015 | /files/taiwansemiconductorcorporation-tsm6968sdcarvg-datasheets-6871.pdf | 8-TSSOP (0.173, 4.40mm Width) | 20 Weeks | 8-TSSOP | 20V | 1.04W | 2 N-Channel (Dual) | 950pF @ 10V | 22mOhm @ 6.5A, 4.5V | 1V @ 250μA | 6.5A Ta | 15nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTHD3102CT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/onsemiconductor-nthd3102ct1g-datasheets-6603.pdf | 20V | 5.5A | 8-SMD, Flat Lead | 3.1mm | 1.1mm | 1.7mm | Lead Free | 8 | 7 Weeks | 4.535924g | No SVHC | 8 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | 600mW | C BEND | 260 | NTHD3102C | 8 | Dual | 40 | 600mW | 2 | 7.2 ns | 16.9ns | 16.9 ns | 15.7 ns | 5.5A | 8V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 400mV | 1.1W | 4A | 16A | 0.045Ohm | -20V | N and P-Channel | 510pF @ 10V | 45m Ω @ 4.4A, 4.5V | 1.2V @ 250μA | 4A 3.1A | 7.9nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||
| SI5936DU-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si5936dut1ge3-datasheets-6643.pdf | PowerPAK® ChipFET™ Dual | 3.08mm | 850μm | 1.98mm | 6 | 14 Weeks | 8 | EAR99 | Tin | 2.3W | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 2.3W | 2 | R-PDSO-N6 | 15 ns | 65ns | 10 ns | 15 ns | 6A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 10.4W | 6A | 0.03Ohm | 2 N-Channel (Dual) | 320pF @ 15V | 30m Ω @ 5A, 10V | 2.2V @ 250μA | 11nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||
| UT6JA2TCR | ROHM Semiconductor | $3.07 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 6-PowerUDFN | 6 | 20 Weeks | EAR99 | not_compliant | YES | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 2 | S-PDSO-N6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 2W | 4A | 12A | 0.103Ohm | 6.5 mJ | 2 P-Channel (Dual) | 305pF @ 15V | 70m Ω @ 4A, 10V | 2.5V @ 1mA | 4A | 6.7nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMC3028LSDXQ-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/diodesincorporated-dmc3028lsdxq13-datasheets-6747.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 7 Weeks | 8 | EAR99 | HIGH RELIABILITY | e3 | Matte Tin (Sn) | AEC-Q101 | 1.2W | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | 5.8A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 5.5A | 0.027Ohm | N and P-Channel | 641pF @ 15V | 27m Ω @ 6A, 10V | 3V @ 250μA | 5.5A 5.8A | 13.2nC @ 5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTHD4502NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/onsemiconductor-nthd4502nt1g-datasheets-6759.pdf | 30V | 2.9A | 8-SMD, Flat Lead | 3.1mm | 1.1mm | 1.7mm | Lead Free | 8 | 2 Weeks | 4.535924g | 80MOhm | 8 | ACTIVE (Last Updated: 10 hours ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | 640mW | C BEND | 260 | NTHD4502N | 8 | Dual | 40 | 1.13W | 2 | FET General Purpose Power | 7.8 ns | 5.4ns | 5.4 ns | 14.9 ns | 3.9A | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | -20V | 2 N-Channel (Dual) | 140pF @ 15V | 85m Ω @ 2.9A, 10V | 3V @ 250μA | 2.2A | 7nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||
| FDZ1416NZ | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdz1416nz-datasheets-6750.pdf | 4-XFBGA, WLCSP | 1.6mm | 150μm | 1.4mm | 4 | 10 Weeks | 22.24mg | 4 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 1.7W | BOTTOM | BALL | NOT SPECIFIED | 1 | NOT SPECIFIED | 1.7W | 2 | FET General Purpose Power | 1.14nF | 9.5 ns | 12ns | 16 ns | 37 ns | 7A | 12V | SILICON | SWITCHING | 24V | METAL-OXIDE SEMICONDUCTOR | 500mW | 7A | 23mOhm | 2 N-Channel (Dual) Common Drain | 1.3V @ 250μA | 17nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||
| UT6K3TCR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | 6-PowerUDFN | 6 | 20 Weeks | EAR99 | not_compliant | YES | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 2 | S-PDSO-N6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 2W | 5.5A | 12A | 0.042Ohm | 2.4 mJ | 2 N-Channel (Dual) | 450pF @ 15V | 42m Ω @ 5A, 4.5V | 1.5V @ 1mA | 5.5A | 4nC @ 4.5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLHS6276TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-irlhs6276trpbf-datasheets-6645.pdf | 6-VQFN | Lead Free | 6 | 12 Weeks | No SVHC | 45MOhm | 6 | EAR99 | No | e3 | Matte Tin (Sn) | 1.5W | 260 | IRLHS6276PBF | Dual | 30 | 1.5W | 2 | FET General Purpose Power | 4.4 ns | 9.3ns | 4.9 ns | 10 ns | 4.5A | 12V | SILICON | DRAIN | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 3.4A | 20V | 2 N-Channel (Dual) | 310pF @ 10V | 800 mV | 45m Ω @ 3.4A, 4.5V | 1.1V @ 10μA | 3.1nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||
| SI7998DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7998dpt1ge3-datasheets-6807.pdf | PowerPAK® SO-8 Dual | 4.9mm | 1.04mm | 5.89mm | Lead Free | 6 | 14 Weeks | 506.605978mg | 9.3mOhm | 8 | yes | EAR99 | No | e3 | MATTE TIN | 40W | C BEND | 260 | 8 | 2 | 30 | 2 | FET General Purpose Power | R-XDSO-C6 | 26 ns | 17ns | 10 ns | 35 ns | 30A | 20V | SILICON | DRAIN | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 22W 40W | 15A | 60A | 30V | 2 N-Channel (Dual) | 1100pF @ 15V | 9.3m Ω @ 15A, 10V | 2.5V @ 250μA | 25A 30A | 26nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||
| MTM78E2B0LBF | Panasonic Electronic Components |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2011 | /files/panasonicelectroniccomponents-mtm78e2b0lbf-datasheets-6743.pdf | 8-SMD, Flat Lead | 2mm | 600μm | 1.7mm | 8 | 10 Weeks | No SVHC | 8 | EAR99 | unknown | 700mW | NOT SPECIFIED | MTM78E2B | Single | NOT SPECIFIED | 700mW | 2 | FET General Purpose Power | 200 ns | 500ns | 1.5 μs | 2 μs | 4A | 12V | SILICON | SWITCHING | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 150mW | 4A | 0.025Ohm | 2 N-Channel (Dual) | 1100pF @ 10V | 850 mV | 25m Ω @ 2A, 4V | 1.3V @ 1mA | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||
| ZXMN6A25DN8TA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/diodesincorporated-zxmn6a25dn8ta-datasheets-6142.pdf | 60V | 4.7A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 17 Weeks | 73.992255mg | No SVHC | 500mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 2.1W | GULL WING | 260 | 8 | 2 | 40 | 2.1W | 2 | 3.8 ns | 4ns | 10.6 ns | 26.2 ns | 5A | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 1.8W | 3.6A | 60V | 2 N-Channel (Dual) | 1063pF @ 30V | 50m Ω @ 3.6A, 10V | 1V @ 250μA (Min) | 3.8A | 20.4nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||
| DMN2016LFG-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/diodesincorporated-dmn2016lfg7-datasheets-6549.pdf | 8-PowerUDFN | Lead Free | 5 | 16 Weeks | No SVHC | 18mOhm | 8 | yes | EAR99 | HIGH RELIABILITY | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | AEC-Q101 | 770mW | 260 | DMN2016L | 2 | Dual | 40 | 2 | FET General Purpose Power | S-PDSO-N5 | 2.6 ns | 13.2ns | 46.8 ns | 84.5 ns | 5.2A | 8V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 2 N-Channel (Dual) Common Drain | 1472pF @ 10V | 18m Ω @ 6A, 4.5V | 1.1V @ 250μA | 16nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||
| US6J2TR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/rohmsemiconductor-us6j2tr-datasheets-6579.pdf | -20V | -1A | 6-SMD, Flat Leads | Lead Free | 6 | 10 Weeks | 390MOhm | 6 | yes | EAR99 | No | e2 | TIN COPPER | 1W | 260 | *J2 | 6 | Dual | 10 | 1W | 2 | Other Transistors | 9 ns | 8ns | 10 ns | 25 ns | 1A | 12V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 1A | -20V | 2 P-Channel (Dual) | 150pF @ 10V | 390m Ω @ 1A, 4.5V | 2V @ 1mA | 2.1nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||
| CMLDM7585 TR PBFREE | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -65°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/centralsemiconductorcorp-cmldm7585trpbfree-datasheets-6447.pdf | SOT-563, SOT-666 | 24 Weeks | YES | Other Transistors | N-CHANNEL AND P-CHANNEL | 0.35W | 20V | METAL-OXIDE SEMICONDUCTOR | 350mW | 0.65A | N and P-Channel | 100pF @ 16V | 230m Ω @ 600mA, 4.5V | 1.1V @ 250μA | 650mA | 1.58nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMC6040SSD-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/diodesincorporated-dmc6040ssd13-datasheets-6618.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 23 Weeks | 73.992255mg | 8 | EAR99 | HIGH RELIABILITY | e3 | Matte Tin (Sn) | AEC-Q101 | 1.24W | DUAL | GULL WING | 260 | 2 | 30 | 2 | 3.7 ns | 6.3ns | 26.1 ns | 58.7 ns | 3.1A | 20V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | 60V | METAL-OXIDE SEMICONDUCTOR | 5.1A | 0.04Ohm | -60V | N and P-Channel | 1130pF @ 15V | 40m Ω @ 8A, 10V | 3V @ 250μA | 5.1A 3.1A | 20.8nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||
| FDME1023PZT | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/onsemiconductor-fdme1023pzt-datasheets-6593.pdf | 6-UFDFN Exposed Pad | 1.6mm | 500μm | 1.6mm | 6 | 16 Weeks | 25.2mg | No SVHC | 6 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | ESD PROTECTION | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 1.4W | Dual | 1.3W | 2 | Other Transistors | 4.7 ns | 4.8ns | 16 ns | 33 ns | 2.6A | 8V | SILICON | DRAIN | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | -600mV | 600mW | 75 pF | -20V | 2 P-Channel (Dual) | 405pF @ 10V | -600 mV | 142m Ω @ 2.3A, 4.5V | 1V @ 250μA | 7.7nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||
| DMC3021LK4-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/diodesincorporated-dmc3021lk413-datasheets-6518.pdf | TO-252-5, DPak (4 Leads + Tab), TO-252AD | 4 | 15 Weeks | 3.949996g | No SVHC | 5 | yes | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | 2.7W | SINGLE | GULL WING | 260 | DMC3021 | 4 | 2 | 40 | 2 | Other Transistors | R-PSSO-G4 | 2.5 ns | 6.6ns | 6.3 ns | 19 ns | 6.8A | 20V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 6.7A | 40A | 30V | N and P-Channel, Common Drain | 751pF @ 10V | 21m Ω @ 7A, 10V | 2.1V @ 250μA | 9.4A 6.8A | 17.4nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||
| DMN2050LFDB-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/diodesincorporated-dmn2050lfdb7-datasheets-3412.pdf | 6-UDFN Exposed Pad | 6 | 15 Weeks | EAR99 | HIGH RELIABILITY | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | AEC-Q101 | 730mW | 260 | 30 | 2 | FET General Purpose Powers | S-PDSO-N6 | 5 ns | 8ns | 8 ns | 25 ns | 3.3A | 12V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 4.5A | 0.045Ohm | 2 N-Channel (Dual) | 389pF @ 10V | 45m Ω @ 5A, 4.5V | 1V @ 250μA | 12nC @ 10V | Logic Level Gate |
