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ContactMOSFETs Transistors Arrays(4365)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | Min Breakdown Voltage | Drain Current-Max (Abs) (ID) | Drain-source On Resistance-Max | Feedback Cap-Max (Crss) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max |
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| DMN601DMK-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/diodesincorporated-dmn601dmk7-datasheets-8928.pdf | 60V | 305mA | SOT-23-6 | 3mm | 1.1mm | 1.6mm | Lead Free | 6 | 16 Weeks | No SVHC | 6 | yes | EAR99 | LOW CAPACITANCE | No | e3 | Matte Tin (Sn) | 700mW | GULL WING | 260 | DMN601DMK | 6 | Dual | 40 | 980mW | 2 | FET General Purpose Power | 3.9 ns | 3.4ns | 9.9 ns | 15.7 ns | 510mA | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 0.305A | 4Ohm | 5 pF | 60V | 2 N-Channel (Dual) | 50pF @ 25V | 2.4 Ω @ 200mA, 10V | 2.5V @ 1mA | 304nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||
| UM6J1NTN | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/rohmsemiconductor-um6j1ntn-datasheets-8965.pdf | 6-TSSOP, SC-88, SOT-363 | Lead Free | 6 | 16 Weeks | 6 | yes | EAR99 | No | e2 | TIN COPPER | 150mW | GULL WING | 260 | *J1 | 6 | 10 | 2 | Other Transistors | 8 ns | 5ns | 40 ns | 30 ns | 200mA | 20V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 0.2A | 2 P-Channel (Dual) | 30pF @ 10V | 1.4 Ω @ 200mA, 10V | 2.5V @ 1mA | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||
| DMN3032LFDB-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmn3032lfdb7-datasheets-8864.pdf | 6-UDFN Exposed Pad | 23 Weeks | 1W | U-DFN2020-6 (Type B) | 500pF | 6.2A | 30V | 1W | 2 N-Channel (Dual) | 500pF @ 15V | 30mOhm @ 5.8A, 10V | 2V @ 250μA | 6.2A | 10.6nC @ 10V | Standard | 30 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMDPB70XPE,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2012 | /files/nexperiausainc-pmdpb70xpe115-datasheets-8990.pdf | 6-UDFN Exposed Pad | 8 Weeks | 6 | No | e3 | Tin (Sn) | 515mW | 6 | 2 | Dual | 7 ns | 16ns | 15 ns | 33 ns | 3A | -1V | -20V | 20V | -20V | 2 P-Channel (Dual) | 600pF @ 10V | 79m Ω @ 2A, 4.5V | 1.25V @ 250μA | 7.5nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMG6968UDM-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/diodesincorporated-dmg6968udm7-datasheets-8999.pdf | SOT-23-6 | 3mm | 1.1mm | 1.6mm | Lead Free | 6 | 15 Weeks | No SVHC | 24mOhm | 6 | yes | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | 850mW | GULL WING | 260 | DMG6968UDM | 6 | Dual | 40 | 850mW | 2 | FET General Purpose Power | 53 ns | 78ns | 234 ns | 562 ns | 6.5A | 8V | SILICON | 20V | METAL-OXIDE SEMICONDUCTOR | 20V | 2 N-Channel (Dual) Common Drain | 143pF @ 10V | 24m Ω @ 6.5A, 4.5V | 900mV @ 250μA | 8.8nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||
| SSM6N815R,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVIII-H | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 6-SMD, Flat Leads | 12 Weeks | 100V | 1.8W Ta | 2 N-Channel (Dual) | 290pF @ 15V | 103m Ω @ 2A, 10V | 2.5V @ 100μA | 2A Ta | 3.1nC @ 4.5V | Logic Level Gate, 4V Drive | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MCH6660-TL-W | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-mch6660tlw-datasheets-8591.pdf | 6-SMD, Flat Leads | Lead Free | 6 | 7 Weeks | 6 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | e6 | Tin/Bismuth (Sn/Bi) | 800mW | DUAL | NOT SPECIFIED | NOT SPECIFIED | 2 | 1.5A | 10V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 2A | N and P-Channel | 128pF @ 10V | 136m Ω @ 1A, 4.5V | 1.3V @ 1mA | 2A 1.5A | 1.8nC @ 4.5V | Logic Level Gate, 1.8V Drive | |||||||||||||||||||||||||||||||||||||||||||||||||
| DMN5L06DMK-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -65°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/diodesincorporated-dmn5l06dmk7-datasheets-8842.pdf | 50V | 305mA | SOT-23-6 | 3mm | 1.1mm | 1.6mm | Lead Free | 6 | 15 Weeks | No SVHC | 2.5Ohm | 6 | yes | EAR99 | HIGH RELIABILITY | e3 | Matte Tin (Sn) | 400mW | GULL WING | 260 | DMN5L06DMK | 6 | Dual | 40 | 400mW | 2 | FET General Purpose Power | Not Qualified | 305mA | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 0.305A | 5 pF | 2 N-Channel (Dual) | 50pF @ 25V | 2 Ω @ 50mA, 5V | 1V @ 250μA | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||
| FDC6306P | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 1999 | /files/onsemiconductor-fdc6306p-datasheets-8848.pdf | -20V | -1.9A | SOT-23-6 Thin, TSOT-23-6 | 3mm | 1mm | 1.7mm | Lead Free | 6 | 10 Weeks | 36mg | No SVHC | 170mOhm | 6 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | Tin | No | e3 | 960mW | GULL WING | Dual | 960mW | 2 | Other Transistors | 6 ns | 9ns | 9 ns | 14 ns | 1.9A | 8V | -20V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | -900mV | 700mW | -20V | 2 P-Channel (Dual) | 441pF @ 10V | -900 mV | 170m Ω @ 1.9A, 4.5V | 1.5V @ 250μA | 4.2nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||
| SI1902CDL-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si1902cdlt1ge3-datasheets-8642.pdf | 6-TSSOP, SC-88, SOT-363 | 1.1mm | Lead Free | 6 | 14 Weeks | 28.009329mg | No SVHC | 235mOhm | 6 | EAR99 | No | e3 | Matte Tin (Sn) | 420mW | GULL WING | 260 | Dual | 30 | 300mW | 2 | FET General Purpose Powers | 150°C | 4 ns | 13ns | 9 ns | 11 ns | 1A | 12V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 1.5V | 20V | 2 N-Channel (Dual) | 62pF @ 10V | 235m Ω @ 1A, 4.5V | 1.5V @ 250μA | 1.1A | 3nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||
| DMN1029UFDB-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmn1029ufdb7-datasheets-8654.pdf | 6-UDFN Exposed Pad | 6 | 15 Weeks | EAR99 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 1.4W | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 2 | S-PDSO-N6 | 5.6A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | SWITCHING | 12V | 12V | METAL-OXIDE SEMICONDUCTOR | 1.4W | 0.029Ohm | 2 N-Channel (Dual) | 914pF @ 6V | 29m Ω @ 5A, 4.5V | 1V @ 250μA | 19.6nC @ 8V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMC2990UDJ-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 1999 | /files/diodesincorporated-dmc2990udj7-datasheets-8285.pdf | SOT-963 | 1.05mm | 450μm | 850μm | Lead Free | 6 | 16 Weeks | No SVHC | 6 | yes | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | AEC-Q101 | 350mW | DUAL | FLAT | DMC2990 | 2 | 2 | 5.8 ns | 5.7ns | 16.4 ns | 31.1 ns | 310mA | 8V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 0.31A | 0.99Ohm | 20V | N and P-Channel | 27.6pF @ 15V | 990m Ω @ 100mA, 4.5V | 1V @ 250μA | 450mA 310mA | 0.5nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||
| DMC2038LVTQ-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/diodesincorporated-dmc2038lvt7-datasheets-3225.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | 14 Weeks | No SVHC | yes | EAR99 | HIGH RELIABILITY | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | 260 | 40 | 2 | R-PDSO-G6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 800mW Ta | 3.7A | 0.035Ohm | 100 pF | N and P-Channel Complementary | 530pF @ 10V 705pF @ 10V | 35m Ω @ 4A, 4.5V, 74m Ω @ 3A, 4.5V | 1V @ 250μA | 3.7A Ta 2.6A Ta | 5.7nC @ 4.5V, 10nC @ 4.5V | Logic Level Gate, 1.8V Drive | ||||||||||||||||||||||||||||||||||||||||||||||
| FDG6320C | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/onsemiconductor-fdg6320c-datasheets-8663.pdf | 220mA | 6-TSSOP, SC-88, SOT-363 | 2mm | 1.1mm | 1.25mm | Lead Free | 6 | 10 Weeks | 28mg | No SVHC | 4Ohm | 6 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | LOGIC LEVEL COMPATIBLE | Tin | No | e3 | 300mW | GULL WING | Dual | 300mW | 2 | Other Transistors | 150°C | 5 ns | 8ns | 8 ns | 9 ns | 220mA | 8V | 25V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 850mV | 25V | N and P-Channel | 9.5pF @ 10V | 4 Ω @ 220mA, 4.5V | 1.5V @ 250μA | 220mA 140mA | 0.4nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||
| DMP2004VK-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -65°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/diodesincorporated-dmp2004vk7-datasheets-8508.pdf | SOT-563, SOT-666 | 1.6mm | 600μm | 1.2mm | Lead Free | 6 | 16 Weeks | 3.005049mg | No SVHC | 900mOhm | 6 | yes | EAR99 | ESD PROTECTION, LOW THRESHOLD | No | e3 | Matte Tin (Sn) | 400mW | FLAT | 260 | DMP2004VK | 6 | Dual | 40 | 400mW | 2 | Other Transistors | 530mA | 8V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 0.53A | -20V | 2 P-Channel (Dual) | 175pF @ 16V | 900m Ω @ 430mA, 4.5V | 1V @ 250μA | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||
| NDC7003P | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/onsemiconductor-ndc7003p-datasheets-8727.pdf | -50V | -220mA | SOT-23-6 Thin, TSOT-23-6 | 3mm | 1.1mm | 1.7mm | Lead Free | 6 | 23 Weeks | 36mg | No SVHC | 5Ohm | 6 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | Tin | No | e3 | 960mW | GULL WING | 2 | Dual | 960mW | 2 | Other Transistors | 150°C | 3.2 ns | 10ns | 10 ns | 8 ns | -340mA | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | -1V | 700mW | 60V | 0.34A | -60V | 2 P-Channel (Dual) | 66pF @ 25V | -1.9 V | 5 Ω @ 340mA, 10V | 3.5V @ 250μA | 340mA | 2.2nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||
| DMN2004DMK-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -65°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/diodesincorporated-dmn2004dmk7-datasheets-8756.pdf | 20V | 540mA | SOT-23-6 | 3mm | 1.1mm | 1.6mm | Lead Free | 6 | 16 Weeks | No SVHC | 6 | yes | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | 225mW | GULL WING | 260 | DMN2004DMK | 6 | Dual | 40 | 225mW | 2 | FET General Purpose Power | 540mA | 8V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 0.54A | 0.55Ohm | 20V | 2 N-Channel (Dual) | 150pF @ 16V | 550m Ω @ 540mA, 4.5V | 1V @ 250μA | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||
| DMG1024UV-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/diodesincorporated-dmg1024uv7-datasheets-8456.pdf | SOT-563, SOT-666 | 1.7mm | 600μm | 1.25mm | Lead Free | 6 | 15 Weeks | 3.005049mg | No SVHC | 10Ohm | 6 | yes | EAR99 | LOW THRESHOLD | No | e3 | Matte Tin (Sn) | 530mW | FLAT | 260 | DMG1024UV | 6 | Dual | 40 | 530mW | 2 | FET General Purpose Power | 5.1 ns | 7.4ns | 12.3 ns | 26.7 ns | 1.38A | 6V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 1.39A | 20V | 2 N-Channel (Dual) | 60.67pF @ 16V | 450m Ω @ 600mA, 4.5V | 1V @ 250μA | 0.74nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||
| SI1967DH-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/vishaysiliconix-si1967dht1e3-datasheets-1153.pdf | 6-TSSOP, SC-88, SOT-363 | 1.1mm | Lead Free | 6 | 14 Weeks | 28.009329mg | Unknown | 490MOhm | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.25W | GULL WING | 260 | SI1967 | 6 | Dual | 30 | 740mW | 2 | Other Transistors | 150°C | 2 ns | 27ns | 10 ns | 12 ns | -1A | 8V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | -1V | 1A | -20V | 2 P-Channel (Dual) | 110pF @ 10V | 490m Ω @ 910mA, 4.5V | 1V @ 250μA | 1.3A | 4nC @ 8V | Logic Level Gate | ||||||||||||||||||||||||||||||||||
| SI1926DL-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si1926dlt1ge3-datasheets-1035.pdf | 6-TSSOP, SC-88, SOT-363 | 2mm | 1mm | 1.25mm | Lead Free | 6 | 14 Weeks | 28.009329mg | No SVHC | 1.4Ohm | 6 | yes | EAR99 | Tin | No | e3 | 510mW | GULL WING | 260 | SI1926 | 6 | Dual | 40 | 300mW | 2 | FET General Purpose Power | 6.5 ns | 12ns | 12 ns | 13 ns | 370mA | 20V | SILICON | SWITCHING | 60V | METAL-OXIDE SEMICONDUCTOR | 2.5V | 0.34A | 60V | 2 N-Channel (Dual) | 18.5pF @ 30V | 1.4 Ω @ 340mA, 10V | 2.5V @ 250μA | 1.4nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||
| BSD235NH6327XTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-bsd235nh6327xtsa1-datasheets-8196.pdf | 6-VSSOP, SC-88, SOT-363 | 2mm | 1mm | 1.25mm | Lead Free | 6 | 10 Weeks | 6 | yes | EAR99 | AVALANCHE RATED | No | e3 | Tin (Sn) | AEC-Q101 | Halogen Free | 500mW | GULL WING | BSD235 | 500mW | 2 | 150°C | 3.8 ns | 3.6ns | 4.5 ns | 950mA | 12V | 20V | SILICON | METAL-OXIDE SEMICONDUCTOR | 700mV | 0.95A | 0.35Ohm | 20V | 2 N-Channel (Dual) | 63pF @ 10V | 350m Ω @ 950mA, 4.5V | 1.2V @ 1.6μA | 0.32nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||
| FDY4000CZ | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-fdy4000cz-datasheets-8562.pdf | 600V | 600mA | SOT-563, SOT-666 | 1.6mm | 500μm | 1.2mm | Lead Free | 6 | 10 Weeks | 32mg | No SVHC | 700MOhm | 6 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | ESD PROTECTED | Tin | No | e3 | 625mW | FLAT | Dual | 625mW | 2 | Other Transistors | 13ns | 13 ns | 8 ns | 600mA | 8V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | 20V | METAL-OXIDE SEMICONDUCTOR | 600mV | 446mW | -20V | N and P-Channel | 60pF @ 10V | 700m Ω @ 600mA, 4.5V | 1.5V @ 250μA | 600mA 350mA | 1.1nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||
| DMP1046UFDB-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmp1046ufdb7-datasheets-8579.pdf | 6-UDFN Exposed Pad | 6 | 15 Weeks | EAR99 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 1.4W | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 2 | S-PDSO-N6 | 3.8A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | SWITCHING | 12V | 12V | METAL-OXIDE SEMICONDUCTOR | 1.4W | 0.061Ohm | 2 P-Channel (Dual) | 915pF @ 6V | 61m Ω @ 3.6A, 4.5V | 1V @ 250μA | 17.9nC @ 8V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDC6303N | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/onsemiconductor-fdc6303n-datasheets-8572.pdf | 25V | 680mA | SOT-23-6 Thin, TSOT-23-6 | 3mm | 1.1mm | 1.7mm | Lead Free | 6 | 10 Weeks | 36mg | No SVHC | 450mOhm | 6 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | LOGIC LEVEL COMPATIBLE | No | e3 | Tin (Sn) | 900mW | GULL WING | 2 | Dual | 900mW | 2 | FET General Purpose Power | 150°C | 3 ns | 8.5ns | 13 ns | 17 ns | 680mA | 8V | 25V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 800mV | 700mW | 25V | 2 N-Channel (Dual) | 50pF @ 10V | 800 mV | 450m Ω @ 500mA, 4.5V | 1.5V @ 250μA | 2.3nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||
| PMCXB900UEZ | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/nexperiausainc-pmcxb900uez-datasheets-8216.pdf | 6-XFDFN Exposed Pad | 6 | 4 Weeks | 6 | No | YES | 265mW | DUAL | 6 | 2 | 500mA | 8V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL AND P-CHANNEL | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | N and P-Channel Complementary | 21.3pF @ 10V | 620m Ω @ 600mA, 4.5V | 950mV @ 250μA | 600mA 500mA | 0.7nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMG1023UV-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/diodesincorporated-dmg1023uv7-datasheets-8380.pdf | SOT-563, SOT-666 | 1.7mm | 600μm | 1.25mm | Lead Free | 6 | 15 Weeks | 3.005049mg | No SVHC | 750mOhm | 6 | yes | EAR99 | ESD PROTECTION, HIGH RELIABILITY, LOW THRESHOLD | No | e3 | Matte Tin (Sn) | 530mW | FLAT | 260 | DMG1023UV | 6 | Dual | 530mW | 2 | Other Transistors | 5.1 ns | 8.1ns | 20.7 ns | 28.4 ns | 1.03A | 6V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | -1V | -20V | 2 P-Channel (Dual) | 59.76pF @ 16V | 750m Ω @ 430mA, 4.5V | 1V @ 250μA | 0.62nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||
| PMDT290UCE,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/nexperiausainc-pmdt290uce115-datasheets-8183.pdf | SOT-563, SOT-666 | Lead Free | 6 | 4 Weeks | 6 | No | e3 | Tin (Sn) | YES | 500mW | FLAT | 6 | Dual | 330mW | 2 | 30ns | 72 ns | 550mA | 8V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | 20V | METAL-OXIDE SEMICONDUCTOR | 0.8A | 0.38Ohm | -20V | N and P-Channel | 83pF @ 10V | 380m Ω @ 500mA, 4.5V | 950mV @ 250μA | 800mA 550mA | 0.68nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||
| PMGD175XNEX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | /files/nexperiausainc-pmgd175xnex-datasheets-8424.pdf | 6-TSSOP, SC-88, SOT-363 | 4 Weeks | 6-TSSOP | 30V | 260mW Ta | 2 N-Channel (Dual) | 81pF @ 15V | 252mOhm @ 900mA, 4.5V | 1.25V @ 250μA | 870mA Ta | 1.65nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMG1026UV-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/diodesincorporated-dmg1026uv7-datasheets-8427.pdf | SOT-563, SOT-666 | 1.7mm | 600μm | 1.25mm | Lead Free | 6 | 16 Weeks | No SVHC | 6 | yes | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | 580mW | FLAT | 260 | DMG1026 | 6 | Dual | 40 | 6.5W | 2 | FET General Purpose Power | 3.4 ns | 3.4ns | 16.3 ns | 26.4 ns | 410mA | 20V | SILICON | SWITCHING | 60V | METAL-OXIDE SEMICONDUCTOR | 0.38A | 2 N-Channel (Dual) | 32pF @ 25V | 1.8 Ω @ 500mA, 10V | 1.8V @ 250μA | 0.45nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||
| 2N7002VC-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/diodesincorporated-2n7002vc7-datasheets-8467.pdf | SOT-563, SOT-666 | 1.6mm | 600μm | 1.2mm | Lead Free | 6 | 16 Weeks | 3.005049mg | No SVHC | 6 | yes | EAR99 | HIGH RELIABILITY | Tin | No | e3 | 150mW | FLAT | 260 | 6 | Dual | 40 | 150mW | 2 | FET General Purpose Power | 50 ns | 50 ns | 280mA | 20V | SILICON | SWITCHING | 60V | METAL-OXIDE SEMICONDUCTOR | 5 pF | 60V | 2 N-Channel (Dual) | 50pF @ 25V | 7.5 Ω @ 50mA, 5V | 2.5V @ 250μA | Standard |
