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ContactMOSFETs Transistors Arrays(4365)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | JESD-609 Code | Terminal Finish | Voltage | Reference Standard | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Interface IC Type | Output Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max |
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| TPS1120D | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -40°C~150°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/texasinstruments-tps1120d-datasheets-4207.pdf | -15V | -1.7A | 8-SOIC (0.154, 3.90mm Width) | 4.9mm | 1.75mm | 3.91mm | Lead Free | 8 | 12 Weeks | No SVHC | 8 | ACTIVE (Last Updated: 5 days ago) | yes | 1.58mm | EAR99 | LOGIC LEVEL COMPATIBLE, ESD PROTECTED | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 840mW | GULL WING | 260 | TPS1120 | 8 | 840mW | 2 | Other Transistors | -15V | 4.5 ns | 10ns | 10 ns | 13 ns | 1.17A | 2V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | -1.25V | 0.4Ohm | 15V | 2 P-Channel (Dual) | 180m Ω @ 1.5A, 10V | 1.5V @ 250μA | 5.45nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||
| SP8J5TB | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/rohmsemiconductor-sp8j5tb-datasheets-5220.pdf | -30V | -7A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 8 | yes | EAR99 | No | e2 | TIN COPPER | 2W | GULL WING | 260 | *J5 | 8 | 10 | 2 | Other Transistors | 20 ns | 50ns | 70 ns | 110 ns | 7A | 20V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 7A | 2 P-Channel (Dual) | 2600pF @ 10V | 28m Ω @ 7A, 10V | 2.5V @ 1mA | 25nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||
| EPC2107 | EPC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eGaN® | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/epc-epc2107-datasheets-5106.pdf | 9-VFBGA | 14 Weeks | 9-BGA (1.35x1.35) | 100V | 3 N-Channel (Half Bridge + Synchronous Bootstrap) | 16pF @ 50V 7pF @ 50V | 320mOhm @ 2A, 5V, 3.3Ohm @ 2A, 5V | 2.5V @ 100μA, 2.5V @ 20μA | 1.7A 500mA | 0.16nC @ 5V, 0.044nC @ 5V | GaNFET (Gallium Nitride) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4204DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4204dyt1ge3-datasheets-5103.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 14 Weeks | 506.605978mg | Unknown | 8 | EAR99 | Tin | No | e3 | 3.25W | GULL WING | 260 | SI4204 | 8 | 2 | Dual | 30 | 2W | 2 | 18 ns | 24ns | 13 ns | 26 ns | 19.8A | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 1V | 3.25W | 0.0046Ohm | 20V | 2 N-Channel (Dual) | 2110pF @ 10V | 4.6m Ω @ 10A, 10V | 2.4V @ 250μA | 45nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||
| SISF20DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sisf20dnt1ge3-datasheets-5035.pdf | PowerPAK® 1212-8SCD | 14 Weeks | PowerPAK® 1212-8SCD | 60V | 5.2W Ta 69.4W Tc | 2 N-Channel (Dual) | 1290pF @ 30V | 13mOhm @ 7A, 10V | 3V @ 250μA | 14A Ta 52A Tc | 33nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5908DC-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si5908dct1e3-datasheets-5599.pdf | 8-SMD, Flat Lead | Lead Free | 8 | 14 Weeks | 84.99187mg | 8 | yes | EAR99 | ULTRA LOW RESISTANCE | No | Pure Matte Tin (Sn) | 1.1W | 260 | SI5908 | 8 | 2 | Dual | 30 | 2 | FET General Purpose Powers | 20 ns | 36ns | 12 ns | 30 ns | 4.4A | 8V | SILICON | DRAIN | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 0.04Ohm | 20V | 2 N-Channel (Dual) | 40m Ω @ 4.4A, 4.5V | 1V @ 250μA | 7.5nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||
| SI7923DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si7923dnt1e3-datasheets-1593.pdf | PowerPAK® 1212-8 Dual | 6 | 14 Weeks | Unknown | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.3W | C BEND | 260 | SI7923 | 8 | 2 | Dual | 40 | 2 | Other Transistors | S-XDSO-C6 | 10 ns | 12ns | 28 ns | 38 ns | 6.4A | 20V | SILICON | DRAIN | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | -1V | 4.3A | 0.047Ohm | -30V | 2 P-Channel (Dual) | 47m Ω @ 6.4A, 10V | 3V @ 250μA | 4.3A | 21nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||
| SQ4946AEY-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sq4946aeyt1ge3-datasheets-4914.pdf | 8-SOIC (0.154, 3.90mm Width) | 12 Weeks | 8-SO | 60V | 4W | 33mOhm | 2 N-Channel (Dual) | 750pF @ 25V | 40mOhm @ 4.5A, 10V | 2.5V @ 250μA | 7A | 18nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4936ADY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2004 | /files/vishaysiliconix-si4936adyt1e3-datasheets-5150.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 14 Weeks | 506.605978mg | Unknown | 36mOhm | 8 | No | 3.12W | SI4936 | 2 | Dual | 1.1W | 2 | 8-SO | 220pF | 6 ns | 14ns | 14 ns | 30 ns | 5.9A | 20V | 30V | 1.1W | 36mOhm | 30V | 2 N-Channel (Dual) | 1 V | 36mOhm @ 5.9A, 10V | 3V @ 250μA | 4.4A | 20nC @ 10V | Logic Level Gate | 65 mΩ | |||||||||||||||||||||||||||||||||||||||||||||
| ZXMN2A04DN8TA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/diodesincorporated-zxmn2a04dn8ta-datasheets-5158.pdf | 20V | 6A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 17 Weeks | 73.992255mg | No SVHC | 25mOhm | 8 | yes | EAR99 | LOW THRESHOLD | No | e3 | Matte Tin (Sn) | 2.1W | GULL WING | 260 | 8 | 2 | 40 | 2.1W | 2 | FET General Purpose Powers | 7.9 ns | 14.8ns | 30.6 ns | 50.5 ns | 7.7A | 12V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 1.8W | 5.9A | 20V | 2 N-Channel (Dual) | 1880pF @ 10V | 25m Ω @ 5.9A, 4.5V | 700mV @ 250μA (Min) | 5.9A | 22.1nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||
| NVMFD5C446NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | /files/onsemiconductor-nvmfd5c446nt1g-datasheets-5140.pdf | 8-PowerTDFN | 48 Weeks | ACTIVE (Last Updated: 2 days ago) | yes | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 40V | 3.2W Ta 89W Tc | 2 N-Channel (Dual) | 2450pF @ 25V | 2.9m Ω @ 30A, 10V | 3.5V @ 250μA | 24A Ta 127A Tc | 38nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SH8M5TB1 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | ROHS3 Compliant | 2009 | /files/rohmsemiconductor-sh8m5tb1-datasheets-5057.pdf | 8-SOIC (0.154, 3.90mm Width) | 40 Weeks | 8 | 2W | *M5 | 2W | 8-SOP | 520pF | 7A | 30V | 2W | 33mOhm | 30V | N and P-Channel | 520pF @ 10V | 30mOhm @ 6A, 10V | 2.5V @ 1mA | 6A 7A | 7.2nC @ 5V | Logic Level Gate | 30 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD87351ZQ5D | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 8-PowerLDFN | 5mm | 1.5mm | 6mm | Contains Lead | 16 Weeks | 8 | ACTIVE (Last Updated: 2 days ago) | yes | 1.5mm | EAR99 | Gold | not_compliant | e3 | Matte Tin (Sn) | 12W | NO LEAD | 260 | CSD87351 | NOT SPECIFIED | HALF BRIDGE BASED MOSFET DRIVER | 10ns | 4.2 ns | 32A | 30V | 2 N-Channel (Dual) Asymmetrical | 1255pF @ 15V | 2.1V @ 250μA | 7.7nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK7K12-60EX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2013 | /files/nexperiausainc-buk7k1260ex-datasheets-4998.pdf | SOT-1205, 8-LFPAK56 | 12 Weeks | 8 | 68W | 2 | Dual | LFPAK56D | 617pF | 9.1 ns | 12.5ns | 15 ns | 23 ns | 40A | 20V | 60V | 68W | 9.3mOhm | 60V | 2 N-Channel (Dual) | 617pF @ 25V | 9.3mOhm @ 10A, 10V | 4V @ 1mA | 40A | 10.4nC @ 10V | Standard | 43 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJQ910EL-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2018 | /files/vishaysiliconix-sqjq910elt1ge3-datasheets-5218.pdf | PowerPAK® 8 x 8 Dual | 12 Weeks | 4 | PowerPAK® 8 x 8 Dual | 100V | 187W | 2 N-Channel (Dual) | 2832pF @ 50V | 8.6mOhm @ 10A, 10V | 2.5V @ 250μA | 70A Tc | 58nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SP8M24FRATB | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | 8-SOIC (0.154, 3.90mm Width) | 8 | 20 Weeks | EAR99 | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | 45V | 45V | METAL-OXIDE SEMICONDUCTOR | 2W | 4.5A | 18A | 0.064Ohm | N and P-Channel | 550pF @ 10V 1700pF @ 10V | 46m Ω @ 4.5A, 10V, 63m Ω @ 3.5A, 10V | 2.5V @ 1mA | 4.5A Ta 3.5A Ta | 9.6nC @ 5V, 18.2nC @ 5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIZF920DT-T1-GE3 | Vishay Siliconix | $1.25 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sizf920dtt1ge3-datasheets-5085.pdf | 8-PowerWDFN | 14 Weeks | 8-PowerPair® (6x5) | 30V | 3.9W Ta 28W Tc 4.5W Ta 74W Tc | 2 N-Channel (Dual), Schottky | 1300pF @ 15V 5230pF @ 15V | 3.07mOhm @ 10A, 10V, 1.05mOhm @ 10A, 10V | 2.4V @ 250μA, 2.2V @ 250μA | 28A Ta 76A Tc 49A Ta 197A Tc | 29nC @ 10V, 125nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STS4DPF20L | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | -20V | -4A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.25mm | 4mm | Lead Free | 8 | No SVHC | 80mOhm | 8 | EAR99 | LOW THRESHOLD | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 2W | GULL WING | 260 | STS4D | 8 | 30 | 2W | 2 | Other Transistors | 25 ns | 35ns | 35 ns | 125 ns | 4A | 16V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 1.6V | 1.6W | 4A | 16A | 20V | 2 P-Channel (Dual) | 1350pF @ 25V | 80m Ω @ 2A, 10V | 2.5V @ 250μA | 16nC @ 5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||
| STS8DN3LLH5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ V | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-sts8dn3llh5-datasheets-4935.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 14 Weeks | 19MOhm | 8 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 2.7W | GULL WING | 260 | STS8DN | 8 | Dual | 30 | 2.7W | 2 | FET General Purpose Power | 4 ns | 4.2ns | 3.5 ns | 21.1 ns | 10A | 22V | SILICON | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 40A | 30V | 2 N-Channel (Dual) | 724pF @ 25V | 19m Ω @ 5A, 10V | 1V @ 250μA | 5.4nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||
| STS4DNF60L | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-sts4dnf60l-datasheets-4947.pdf | 60V | 4A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.25mm | 4.05mm | Lead Free | 8 | 12 Weeks | 4.535924g | No SVHC | 55mOhm | 8 | ACTIVE (Last Updated: 8 months ago) | EAR99 | LOW THRESHOLD | e3 | Matte Tin (Sn) | 2W | GULL WING | 260 | STS4D | 8 | 30 | 2W | 2 | FET General Purpose Power | Not Qualified | 15 ns | 28ns | 10 ns | 45 ns | 4A | 15V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 1.7V | 4A | 16A | 60V | 2 N-Channel (Dual) | 1030pF @ 25V | 55m Ω @ 2A, 10V | 2.5V @ 250μA | 15nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||
| TC2320TG-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/microchiptechnology-tc2320tgg-datasheets-4940.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9mm | 1.65mm | 3.9mm | 8 | 3 Weeks | 84.99187mg | 8 | EAR99 | LOW THRESHOLD | Tin | No | e3 | DUAL | GULL WING | 260 | 2 | 40 | 2 | 10 ns | 15ns | 15 ns | 20 ns | 2A | 20V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 7Ohm | 200V | N and P-Channel | 110pF @ 25V | 7 Ω @ 1A, 10V | 2V @ 1mA | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||
| SQ4920EY-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sq4920eyt1ge3-datasheets-4927.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 12 Weeks | 506.605978mg | Unknown | 17.5mOhm | 8 | No | 4.4W | 2 | Dual | 4.4W | 2 | 8-SO | 1.465nF | 7 ns | 10ns | 8 ns | 25 ns | 8A | 20V | 30V | 2V | 4.4W | 14.5mOhm | 2 N-Channel (Dual) | 1465pF @ 15V | 14.5mOhm @ 6A, 10V | 2.5V @ 250μA | 8A | 30nC @ 10V | Logic Level Gate | 14.5 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||
| SH8J31GZETB | ROHM Semiconductor | $4.12 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 8-SOIC (0.154, 3.90mm Width) | 8 | 20 Weeks | EAR99 | YES | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 2W | 4.5A | 18A | 0.085Ohm | 14 mJ | 2 P-Channel (Dual) | 2500pF @ 10V | 70m Ω @ 4.5A, 10V | 3V @ 1mA | 4.5A | 40nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFD5853NLT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-nvmfd5853nlt1g-datasheets-4982.pdf | 8-PowerTDFN | 6.1mm | 1.05mm | 5.1mm | Lead Free | 6 | 13 Weeks | 8 | ACTIVE, NOT REC (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | AEC-Q101 | Halogen Free | YES | 3W | FLAT | 8 | Dual | 2 | FET General Purpose Power | R-PDSO-F6 | 10 ns | 22 ns | 12A | 20V | SILICON | DRAIN | 40V | METAL-OXIDE SEMICONDUCTOR | 34A | 165A | 0.015Ohm | 40 mJ | 40V | 2 N-Channel (Dual) | 1100pF @ 25V | 10m Ω @ 15A, 10V | 2.4V @ 250μA | 23nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||
| SI4202DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2017 | /files/vishaysiliconix-si4202dyt1ge3-datasheets-4992.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 14 Weeks | 506.605978mg | No SVHC | 14MOhm | 8 | No | 75A | 30V | 3.7W | 2 | Dual | 2.4W | 2 | 8-SO | 710pF | 8 ns | 12.1A | 20V | 30V | 1V | 3.7W | 17mOhm | 30V | 2 N-Channel (Dual) | 710pF @ 15V | 14mOhm @ 8A, 10V | 2.5V @ 250μA | 12.1A | 17nC @ 10V | Logic Level Gate | 14 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFD5C462NLWFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-nvmfd5c462nlt1g-datasheets-5481.pdf | 8-PowerTDFN | 6 | 48 Weeks | ACTIVE (Last Updated: 3 days ago) | yes | not_compliant | e3 | Tin (Sn) | YES | FLAT | 2 | R-PDSO-F6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | 50W | 40V | 40V | METAL-OXIDE SEMICONDUCTOR | 3W Ta 50W Tc | 311A | 0.0077Ohm | 174 mJ | 2 N-Channel (Dual) | 1300pF @ 25V | 4.7m Ω @ 10A, 10V | 2.2V @ 40μA | 18A Ta 84A Tc | 11nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFD5C668NLT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 2018 | /files/onsemiconductor-nvmfd5c668nlt1g-datasheets-5009.pdf | 8-PowerTDFN | 48 Weeks | yes | not_compliant | e3 | Tin (Sn) | 60V | 3W Ta 57.5W Tc | 2 N-Channel (Dual) | 1440pF @ 25V | 6.5m Ω @ 20A, 10V | 2V @ 50μA | 15.5A Ta 68A Tc | 21.3nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ504EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sqj504ept1ge3-datasheets-4880.pdf | PowerPAK® SO-8 Dual | 12 Weeks | PowerPAK® SO-8 Dual | 40V | 34W Tc | N and P-Channel | 1900pF @ 25V 4600pF @ 25V | 7.5mOhm @ 8A, 10V, 17mOhm @ 8A, 10V | 2.5V @ 250μA | 30A Tc | 30nC @ 10V, 85nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIZ300DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-siz300dtt1ge3-datasheets-4806.pdf | 8-PowerWDFN | 3mm | 750μm | 3mm | Lead Free | 8 | 14 Weeks | 8 | yes | EAR99 | No | e3 | MATTE TIN | 31W | 260 | SIZ300 | 8 | 2 | Dual | 40 | 2 | FET General Purpose Power | 80ns | 40 ns | 28A | 20V | SILICON | DRAIN SOURCE | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 16.7W 31W | 11A | 30A | 7 mJ | 30V | 2 N-Channel (Half Bridge) | 400pF @ 15V | 24m Ω @ 9.8A, 10V | 2.4V @ 250μA | 11A 28A | 12nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||
| SI4340CDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4340cdyt1e3-datasheets-4887.pdf | 14-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | 186.993455mg | 14 | 5.4W | SI4340 | 2 | 14-SOIC | 1.3nF | 22 ns | 10ns | 10 ns | 32 ns | 11.5A | 16V | 20V | 3W 5.4W | 9.4mOhm | 2 N-Channel (Dual) | 1300pF @ 10V | 9.4mOhm @ 11.5A, 10V | 3V @ 250μA | 14.1A 20A | 32nC @ 10V | Logic Level Gate | 9.4 mΩ |
