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ContactMOSFETs Transistors Arrays(4365)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation Ambient-Max | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max |
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| SIA931DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sia931djt1ge3-datasheets-9285.pdf | PowerPAK® SC-70-6 Dual | 800μm | 14 Weeks | Unknown | 6 | EAR99 | No | C-07431-DUAL | 7.8W | 2 | Dual | 1.9W | 150°C | 8 ns | 18ns | 5 ns | 20 ns | -4.3A | 20V | 30V | -30V | 2 P-Channel (Dual) | 445pF @ 15V | 65m Ω @ 3A, 10V | 2.2V @ 250μA | 4.5A | 13nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDC6304P | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdc6304p-datasheets-9372.pdf | -25V | -460mA | SOT-23-6 Thin, TSOT-23-6 | Lead Free | 6 | 10 Weeks | 36mg | No SVHC | 1.1Ohm | 6 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e3 | Tin (Sn) | 700mW | GULL WING | Dual | 900mW | 2 | Other Transistors | 7 ns | 8ns | 8 ns | 55 ns | -460mA | 8V | SILICON | SWITCHING | 25V | METAL-OXIDE SEMICONDUCTOR | -860mV | -25V | 2 P-Channel (Dual) | 62pF @ 10V | 1.1 Ω @ 500mA, 4.5V | 1.5V @ 250μA | 460mA | 1.5nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||
| DMG9926UDM-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/diodesincorporated-dmg9926udm7-datasheets-9379.pdf | SOT-23-6 | 3.1mm | 1.3mm | 1.7mm | Lead Free | 6 | 15 Weeks | No SVHC | 6 | yes | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | 980mW | GULL WING | 260 | DMG9926UDM | 6 | 40 | 980mW | 2 | FET General Purpose Power | 8.4 ns | 8.2ns | 8.9 ns | 40.4 ns | 4.2A | 8V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 20V | 2 N-Channel (Dual) Common Drain | 856pF @ 10V | 28m Ω @ 8.2A, 4.5V | 900mV @ 250μA | 8.3nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||
| SI3993CDV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si3993cdvt1ge3-datasheets-9330.pdf | SOT-23-6 Thin, TSOT-23-6 | Lead Free | 6 | 14 Weeks | 19.986414mg | No SVHC | 6 | EAR99 | Tin | unknown | e3 | 1.4W | GULL WING | NOT SPECIFIED | 6 | 2 | Dual | NOT SPECIFIED | 1.14W | 2 | Other Transistors | Not Qualified | 10 ns | 16ns | 12 ns | 17 ns | -2.9A | 20V | SILICON | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | -1.2V | MO-193AA | 0.111Ohm | -30V | 2 P-Channel (Dual) | 210pF @ 15V | -1.2 V | 111m Ω @ 2.5A, 10V | 2.2V @ 250μA | 2.9A | 8nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||
| SI3585CDV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si3585cdvt1ge3-datasheets-9435.pdf | SOT-23-6 Thin, TSOT-23-6 | 1.1mm | Lead Free | 6 | 14 Weeks | 19.986414mg | No SVHC | 195mOhm | 6 | EAR99 | Tin | unknown | e3 | 1.3W | DUAL | GULL WING | 260 | 6 | 2 | 30 | 1.1W | 2 | Other Transistors | Not Qualified | 150°C | 3 ns | 10ns | 7 ns | 13 ns | 2.1A | 12V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | 20V | METAL-OXIDE SEMICONDUCTOR | 1.5V | 1.4W 1.3W | MO-193AA | 3.9A | N and P-Channel | 150pF @ 10V | 58m Ω @ 2.5A, 4.5V | 1.5V @ 250μA | 3.9A 2.1A | 4.8nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||
| NTZD3152PT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/onsemiconductor-ntzd3152pt1g-datasheets-8241.pdf | -20V | -430mA | SOT-563, SOT-666 | 1.7mm | 600μm | 1.3mm | Lead Free | 6 | 10 Weeks | 500mOhm | 6 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | ESD PROTECTION, LOW THRESHOLD | No | e3 | Tin (Sn) | YES | 250mW | FLAT | 260 | NTZD3152P | 6 | Dual | 40 | 250mW | 2 | Other Transistors | 10 ns | 12ns | 12 ns | 35 ns | 430mA | 6V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 0.43A | -20V | 2 P-Channel (Dual) | 175pF @ 16V | 900m Ω @ 430mA, 4.5V | 1V @ 250μA | 2.5nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||
| SI1034X-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-si1034xt1ge3-datasheets-8955.pdf | SOT-563, SOT-666 | 1.7mm | 600μm | 1.2mm | Lead Free | 6 | 14 Weeks | 32.006612mg | 10Ohm | 3 | yes | EAR99 | LOW THRESHOLD | Tin | No | e3 | 250mW | FLAT | 260 | SI1034 | 6 | 2 | Dual | 40 | 250mW | 2 | FET General Purpose Powers | R-PDSO-F6 | 50 ns | 25ns | 25 ns | 50 ns | 200mA | 5V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 0.18A | 20V | 2 N-Channel (Dual) | 1.2 V | 5 Ω @ 200mA, 4.5V | 1.2V @ 250μA | 180mA | 0.75nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||
| CSD75208W1015 | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 6-UFBGA, DSBGA | 1.5mm | 1mm | 1.8mm | Lead Free | 6 | 6 Weeks | No SVHC | 6 | ACTIVE (Last Updated: 1 day ago) | yes | 2mm | EAR99 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 750mW | BOTTOM | BALL | 260 | CSD75208 | 2 | NOT SPECIFIED | 2 | 9 ns | 5ns | 11 ns | 29 ns | -1.6A | -6V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | -800mV | 0.15Ohm | 10 pF | 2 P-Channel (Dual) Common Source | 410pF @ 10V | 68m Ω @ 1A, 4.5V | 1.1V @ 250μA | 1.6A | 2.5nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||
| DMC1229UFDB-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/diodesincorporated-dmc1229ufdb7-datasheets-9217.pdf | 6-UDFN Exposed Pad | 2.08mm | 555μm | 2.075mm | Lead Free | 6 | 15 Weeks | 6 | EAR99 | HIGH RELIABILITY | Gold | No | e4 | 1.4W | DUAL | 260 | 2 | 30 | 2 | Other Transistors | 5.7 ns | 11.5ns | 26.4 ns | 27.8 ns | 3.8A | 8V | SILICON | DRAIN | SWITCHING | N-CHANNEL AND P-CHANNEL | 12V | METAL-OXIDE SEMICONDUCTOR | N and P-Channel | 914pF @ 6V | 29m Ω @ 5A, 4.5V | 1V @ 250μA | 5.6A 3.8A | 19.6nC @ 8V | ||||||||||||||||||||||||||||||||||||||||||||||
| DMC3025LSD-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/diodesincorporated-dmc3025lsd13-datasheets-9268.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.95mm | 1.5mm | 3.95mm | Lead Free | 8 | 17 Weeks | 73.992255mg | No SVHC | 8 | EAR99 | HIGH RELIABILITY | e3 | Matte Tin (Sn) | AEC-Q101 | 1.2W | DUAL | GULL WING | 260 | DMC3025 | 2 | 30 | 2 | Other Transistors | 6.8 ns | 4.9ns | 12.4 ns | 28.4 ns | 4.2A | 20V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | 30V | METAL-OXIDE SEMICONDUCTOR | 5.3A | -30V | N and P-Channel | 501pF @ 15V | 20m Ω @ 7.4A, 10V | 2V @ 250μA | 6.5A 4.2A | 9.8nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||
| DMC62D0SVQ-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/diodesincorporated-dmc62d0svq7-datasheets-9009.pdf | SOT-563, SOT-666 | 16 Weeks | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 60V 50V | 510mW Ta | N and P-Channel Complementary | 30pF @ 25V 26pF @ 25V | 1.7 Ω @ 500mA, 10V, 6 Ω @ 500mA, 10V | 2.5V @ 250μA | 571mA Ta 304mA Ta | 0.4nC @ 4.5V, 0.3nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN3135LVT-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/diodesincorporated-dmn3135lvt7-datasheets-9063.pdf | SOT-23-6 Thin, TSOT-23-6 | Lead Free | 6 | 15 Weeks | No SVHC | 6 | yes | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | 840mW | GULL WING | 260 | 6 | 2 | 40 | 1 | FET General Purpose Power | 2.6 ns | 4.6ns | 2.5 ns | 13.1 ns | 3.5A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 3.3A | 0.047Ohm | 30V | 2 N-Channel (Dual) | 305pF @ 15V | 60m Ω @ 3.1A, 10V | 2.2V @ 250μA | 4.1nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||
| AO6608 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2011 | SC-74, SOT-457 | 18 Weeks | 6-TSOP | 30V 20V | 1.25W Ta | N and P-Channel Complementary | 235pF @ 15V 510pF @ 10V | 60mOhm @ 3.4A, 10V, 75mOhm @ 3.3A, 4.5V | 1.5V @ 250μA, 1V @ 250μA | 3.4A Ta 3.3A Ta | 3nC @ 4.5V, 10nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMDPB58UPE,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/nexperiausainc-pmdpb58upe115-datasheets-9106.pdf | 6-UDFN Exposed Pad | 6 | 8 Weeks | 6 | No | e3 | Tin (Sn) | YES | 515mW | 6 | 2 | 7 ns | 15ns | 14 ns | 41 ns | 3.6A | 8V | -20V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 14.4A | 2 P-Channel (Dual) | 804pF @ 10V | 67m Ω @ 2A, 4.5V | 950mV @ 250μA | 9.5nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ECH8697R-TL-W | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2013 | /files/onsemiconductor-ech8697rtlw-datasheets-8979.pdf | 8-SMD, Flat Lead | Lead Free | 20 Weeks | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | not_compliant | e6 | Tin/Bismuth (Sn/Bi) | 1.5W | 2 | Dual | 160 ns | 230ns | 23.6 μs | 19.7 μs | 10A | 12.5V | 24V | 24V | 2 N-Channel (Dual) Common Drain | 11.6m Ω @ 5A, 4.5V | 6nC @ 4.5V | Logic Level Gate, 2.5V Drive | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN2019UTS-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2009 | /files/diodesincorporated-dmn2019uts13-datasheets-8805.pdf | 8-TSSOP (0.173, 4.40mm Width) | Lead Free | 16 Weeks | 157.991892mg | No SVHC | 18.5mOhm | 8 | EAR99 | e3 | Matte Tin (Sn) | 780mW | DMN2019 | 2 | Dual | FET General Purpose Powers | 53 ns | 78ns | 234 ns | 562 ns | 5.4A | 12V | 20V | METAL-OXIDE SEMICONDUCTOR | 20V | 2 N-Channel (Dual) Common Drain | 143pF @ 10V | 18.5m Ω @ 7A, 10V | 950mV @ 250μA | 8.8nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AON7810 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2010 | /files/alphaomegasemiconductor-aon7810-datasheets-2170.pdf | 8-PowerSMD, Flat Leads | 18 Weeks | 8 | 3.1W | 2 | 6A | 20V | 30V | 2 N-Channel (Dual) | 542pF @ 15V | 14m Ω @ 6A, 10V | 2.3V @ 250μA | 12.2nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDC6305N | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 1999 | 20V | 2.7A | SOT-23-6 Thin, TSOT-23-6 | 3mm | 1.1mm | 1.7mm | Lead Free | 6 | 10 Weeks | 36mg | No SVHC | 80mOhm | 6 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | Tin | No | e3 | 960mW | GULL WING | 2 | Dual | 900mW | 2 | FET General Purpose Power | 150°C | 5 ns | 8.5ns | 8.5 ns | 11 ns | 2.7A | 8V | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 900mV | 700mW | 20V | 2 N-Channel (Dual) | 310pF @ 10V | 80m Ω @ 2.7A, 4.5V | 1.5V @ 250μA | 5nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||
| NTJD4158CT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/onsemiconductor-ntjd4158ct1g-datasheets-8583.pdf | 250mA | 6-TSSOP, SC-88, SOT-363 | 2.2mm | 1mm | 1.35mm | Lead Free | 6 | 10 Weeks | No SVHC | 1.5Ohm | 6 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | 270mW | GULL WING | 260 | NTJD4158C | 6 | Dual | 40 | 270mW | 2 | Other Transistors | 15 ns | 6.5ns | 3.5 ns | 13.5 ns | 880mA | 12V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | 30V 20V | METAL-OXIDE SEMICONDUCTOR | 1.2V | -20V | N and P-Channel | 33pF @ 5V | 1.5 Ω @ 10mA, 4.5V | 1.5V @ 100μA | 250mA 880mA | 1.5nC @ 5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||
| NTHD4102PT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/onsemiconductor-nthd4102pt1g-datasheets-9202.pdf | -20V | -7.3A | 8-SMD, Flat Lead | 3.1mm | 1.1mm | 1.7mm | Lead Free | 8 | 7 Weeks | 4.535924g | No SVHC | 64MOhm | 8 | ACTIVE (Last Updated: 8 hours ago) | yes | EAR99 | LOGIC LEVEL COMPATIBLE | No | e3 | Tin (Sn) | YES | 1.1W | C BEND | 260 | NTHD4102P | 8 | Dual | 40 | 1.1W | 2 | Other Transistors | 5.5 ns | 12ns | 12 ns | 32 ns | 4.1A | 8V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | -1.5V | -20V | 2 P-Channel (Dual) | 750pF @ 16V | -1.5 V | 80m Ω @ 2.9A, 4.5V | 1.5V @ 250μA | 2.9A | 8.6nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||
| FDC3601N | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdc3601n-datasheets-9221.pdf | 100V | 1A | SOT-23-6 Thin, TSOT-23-6 | 3mm | 1mm | 1.7mm | Lead Free | 6 | 5 Weeks | 36mg | No SVHC | 500MOhm | 6 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e3 | Tin (Sn) | 960mW | GULL WING | Dual | 960mW | 2 | FET General Purpose Power | 8 ns | 4ns | 4 ns | 11 ns | 1A | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 2.6V | 700mW | 1A | 100V | 2 N-Channel (Dual) | 153pF @ 50V | 500m Ω @ 1A, 10V | 4V @ 250μA | 5nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||
| PMCPB5530X,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/nexperiausainc-pmcpb5530x115-datasheets-9212.pdf | 6-UDFN Exposed Pad | Lead Free | 6 | 8 Weeks | 6 | No | e3 | Tin (Sn) | YES | 490mW | 6 | 2 | Dual | 2 | 4 ns | 15ns | 16 ns | 40 ns | 3.4A | -650mV | SILICON | DRAIN | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 4A | 0.034Ohm | 20V | N and P-Channel | 660pF @ 10V | 34m Ω @ 3A, 4.5V | 900mV @ 250μA | 4A Ta 3.4A Ta | 21.7nC @ 4.5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ1922EEH-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2018 | /files/vishaysiliconix-sq1922eeht1ge3-datasheets-9023.pdf | 6-TSSOP, SC-88, SOT-363 | 1.1mm | 6 | 12 Weeks | EAR99 | unknown | YES | GULL WING | 2 | 1.5W | 2 | 175°C | R-PDSO-G6 | 10 ns | 15 ns | 840mA | 12V | SILICON | METAL-OXIDE SEMICONDUCTOR | 0.84A | 0.6Ohm | 20V | 2 N-Channel (Dual) | 50pF @ 10V | 350m Ω @ 400mA, 4.5V | 1.5V @ 250μA | 840mA Tc | 1.2nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMDPB30XN,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2012 | /files/nexperiausainc-pmdpb30xn115-datasheets-9038.pdf | 6-UDFN Exposed Pad | 8 Weeks | 8 | No | 490mW | 2 | Dual | 6-HUSON-EP (2x2) | 660pF | 40 ns | 15ns | 16 ns | 4 ns | 4A | 650mV | 20V | 490mW | 32mOhm | 2 N-Channel (Dual) | 660pF @ 10V | 40mOhm @ 3A, 4.5V | 900mV @ 250μA | 4A | 21.7nC @ 4.5V | Logic Level Gate | 40 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDC6321C | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/onsemiconductor-fdc6321c-datasheets-9030.pdf | 680mA | SOT-23-6 Thin, TSOT-23-6 | 3mm | 1.1mm | 1.7mm | Lead Free | 6 | 10 Weeks | 36mg | No SVHC | 450mOhm | 6 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | Tin | No | e3 | 900mW | GULL WING | 2 | Dual | 900mW | 2 | Other Transistors | 3 ns | 9ns | 9 ns | 55 ns | 460mA | 8V | 25V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 800mV | 700mW | 9 pF | 25V | N and P-Channel | 50pF @ 10V | 800 mV | 450m Ω @ 500mA, 4.5V | 1.5V @ 250μA | 680mA 460mA | 2.3nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||
| FDC6306P | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 1999 | /files/onsemiconductor-fdc6306p-datasheets-8848.pdf | -20V | -1.9A | SOT-23-6 Thin, TSOT-23-6 | 3mm | 1mm | 1.7mm | Lead Free | 6 | 10 Weeks | 36mg | No SVHC | 170mOhm | 6 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | Tin | No | e3 | 960mW | GULL WING | Dual | 960mW | 2 | Other Transistors | 6 ns | 9ns | 9 ns | 14 ns | 1.9A | 8V | -20V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | -900mV | 700mW | -20V | 2 P-Channel (Dual) | 441pF @ 10V | -900 mV | 170m Ω @ 1.9A, 4.5V | 1.5V @ 250μA | 4.2nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||
| SI1902CDL-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si1902cdlt1ge3-datasheets-8642.pdf | 6-TSSOP, SC-88, SOT-363 | 1.1mm | Lead Free | 6 | 14 Weeks | 28.009329mg | No SVHC | 235mOhm | 6 | EAR99 | No | e3 | Matte Tin (Sn) | 420mW | GULL WING | 260 | Dual | 30 | 300mW | 2 | FET General Purpose Powers | 150°C | 4 ns | 13ns | 9 ns | 11 ns | 1A | 12V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 1.5V | 20V | 2 N-Channel (Dual) | 62pF @ 10V | 235m Ω @ 1A, 4.5V | 1.5V @ 250μA | 1.1A | 3nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||
| MCH6661-TL-W | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/onsemiconductor-mch6661tlw-datasheets-8752.pdf | 6-SMD, Flat Leads | 2mm | 850μm | 1.6mm | Lead Free | 7 Weeks | 7.512624mg | No SVHC | 6 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | e6 | Tin/Bismuth (Sn/Bi) | 800mW | NOT SPECIFIED | Dual | NOT SPECIFIED | 800mW | 2 | 3.4 ns | 3.6ns | 4 ns | 10.5 ns | 1.8A | 20V | 30V | 2.6V | 30V | 2 N-Channel (Dual) | 88pF @ 10V | 188m Ω @ 900mA, 10V | 2.6V @ 1mA | 2nC @ 10V | Logic Level Gate, 4V Drive | |||||||||||||||||||||||||||||||||||||||||||||||||||
| FDG6301N-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdg6301nf085-datasheets-8717.pdf | 6-TSSOP, SC-88, SOT-363 | 1.1mm | 6 | 42 Weeks | 28mg | 6 | ACTIVE (Last Updated: 6 days ago) | yes | LOGIC LEVEL COMPATIBLE | No | 300mW | GULL WING | Dual | 300mW | 2 | FET General Purpose Power | 150°C | 5 ns | 4.5ns | 3.2 ns | 4 ns | 220mA | 8V | SILICON | SWITCHING | 25V | METAL-OXIDE SEMICONDUCTOR | 850mV | 4Ohm | 25V | 2 N-Channel (Dual) | 9.5pF @ 10V | 4 Ω @ 220mA, 4.5V | 1.5V @ 250μA | 0.4nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||
| SI1553CDL-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si1553cdlt1ge3-datasheets-8652.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 14 Weeks | EAR99 | unknown | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | 6 | 2 | Not Qualified | R-PDSO-G6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | 0.34W | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 340mW | 0.7A | 0.39Ohm | N and P-Channel | 38pF @ 10V | 0.29W | 390m Ω @ 700mA, 4.5V | 1.5V @ 250μA | 700mA 500mA | 1.8nC @ 10V | Logic Level Gate |
