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ContactMOSFETs Transistors Arrays(4365)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | Drain Current-Max (Abs) (ID) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max |
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| PMGD175XNEX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | /files/nexperiausainc-pmgd175xnex-datasheets-8424.pdf | 6-TSSOP, SC-88, SOT-363 | 4 Weeks | 6-TSSOP | 30V | 260mW Ta | 2 N-Channel (Dual) | 81pF @ 15V | 252mOhm @ 900mA, 4.5V | 1.25V @ 250μA | 870mA Ta | 1.65nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMG1026UV-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/diodesincorporated-dmg1026uv7-datasheets-8427.pdf | SOT-563, SOT-666 | 1.7mm | 600μm | 1.25mm | Lead Free | 6 | 16 Weeks | No SVHC | 6 | yes | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | 580mW | FLAT | 260 | DMG1026 | 6 | Dual | 40 | 6.5W | 2 | FET General Purpose Power | 3.4 ns | 3.4ns | 16.3 ns | 26.4 ns | 410mA | 20V | SILICON | SWITCHING | 60V | METAL-OXIDE SEMICONDUCTOR | 0.38A | 2 N-Channel (Dual) | 32pF @ 25V | 1.8 Ω @ 500mA, 10V | 1.8V @ 250μA | 0.45nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||
| 2N7002VC-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/diodesincorporated-2n7002vc7-datasheets-8467.pdf | SOT-563, SOT-666 | 1.6mm | 600μm | 1.2mm | Lead Free | 6 | 16 Weeks | 3.005049mg | No SVHC | 6 | yes | EAR99 | HIGH RELIABILITY | Tin | No | e3 | 150mW | FLAT | 260 | 6 | Dual | 40 | 150mW | 2 | FET General Purpose Power | 50 ns | 50 ns | 280mA | 20V | SILICON | SWITCHING | 60V | METAL-OXIDE SEMICONDUCTOR | 5 pF | 60V | 2 N-Channel (Dual) | 50pF @ 25V | 7.5 Ω @ 50mA, 5V | 2.5V @ 250μA | Standard | ||||||||||||||||||||||||||||||||||||||||
| SIL2301-TP | Micro Commercial Co | $0.36 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/microcommercialco-sil2301tp-datasheets-8339.pdf | SOT-23-6 | 12 Weeks | 260 | 10 | 20V | 350mW | 2 P-Channel (Dual) | 405pF @ 10V | 90m Ω @ 2.5A, 4.5V | 1V @ 250μA | 2.3A | 10nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSS138DWQ-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2002 | /files/diodesincorporated-bss138dwq7-datasheets-8493.pdf | 6-TSSOP, SC-88, SOT-363 | 15 Weeks | 6 | EAR99 | e3 | Matte Tin (Sn) | 200mW | NOT SPECIFIED | NOT SPECIFIED | 200mA | 50V | 200mW | 2 N-Channel (Dual) | 50pF @ 10V | 3.5 Ω @ 220mA, 10V | 1.5V @ 250μA | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6N43FU,LF | Toshiba Semiconductor and Storage | $0.34 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2014 | 6-TSSOP, SC-88, SOT-363 | 12 Weeks | 6 | EAR99 | unknown | 200mW | 500mA | 20V | 200mW | 2 N-Channel (Dual) | 46pF @ 10V | 630m Ω @ 200mA, 5V | 1V @ 1mA | 1.23nC @ 4V | Logic Level Gate, 1.5V Drive | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NX138BKSX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/nexperiausainc-nx138bksx-datasheets-7925.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 4 Weeks | AEC-Q101; IEC-60134 | YES | GULL WING | 6 | 2 | R-PDSO-G6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 320mW | 0.21A | 2 N-Channel (Dual) | 20pF @ 30V | 3.5 Ω @ 200mA, 10V | 1.5V @ 250μA | 210mA Ta | 0.7nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVTJD4001NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/onsemiconductor-ntjd4001nt1g-datasheets-3034.pdf | 6-TSSOP, SC-88, SOT-363 | Lead Free | 6 | 10 Weeks | 6 | ACTIVE (Last Updated: 13 hours ago) | yes | EAR99 | No | e3 | Tin (Sn) | AEC-Q101 | YES | 272mW | GULL WING | 6 | Dual | 2 | FET General Purpose Power | 17 ns | 23ns | 82 ns | 94 ns | 250mA | 20V | SILICON | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 0.25A | 2.5Ohm | 12 pF | 2 N-Channel (Dual) | 33pF @ 5V | 1.5 Ω @ 10mA, 4V | 1.5V @ 100μA | 1.3nC @ 5V | Standard | ||||||||||||||||||||||||||||||||||||||||||
| NX7002AKS,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2012 | /files/nexperiausainc-nx7002aks115-datasheets-7861.pdf | 6-TSSOP, SC-88, SOT-363 | 4 Weeks | 6 | No | 220mW | 2 | Dual | 6-TSSOP | 17pF | 6 ns | 7ns | 14 ns | 20 ns | 170mA | 1.6V | 60V | 60V | 220mW | 3Ohm | 60V | 2 N-Channel (Dual) | 17pF @ 10V | 4.5Ohm @ 100mA, 10V | 2.1V @ 250μA | 170mA | 0.43nC @ 4.5V | Logic Level Gate | 4.5 Ω | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMGD290XN,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/nexperiausainc-pmgd290xn115-datasheets-8187.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 4 Weeks | 6 | EAR99 | 8541.29.00.75 | e3 | Tin (Sn) | YES | GULL WING | 260 | 6 | 30 | 410mW | 2 | 860mA | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 410mW | 0.35Ohm | 2 N-Channel (Dual) | 34pF @ 20V | 350m Ω @ 200mA, 4.5V | 1.5V @ 250μA | 0.72nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||
| PMDT290UNE,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/nexperiausainc-pmdt290une115-datasheets-8335.pdf | SOT-563, SOT-666 | Lead Free | 6 | 4 Weeks | 6 | No | e3 | Tin (Sn) | YES | 500mW | FLAT | 6 | Dual | 390mW | 2 | 6 ns | 4ns | 31 ns | 86 ns | 800mA | 8V | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 500mW | 0.8A | 0.38Ohm | 20V | 2 N-Channel (Dual) | 83pF @ 10V | 380m Ω @ 500mA, 4.5V | 950mV @ 250μA | 0.68nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||
| NTJD4105CT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-ntjd4105ct2g-datasheets-6244.pdf | 630mA | 6-TSSOP, SC-88, SOT-363 | 2.2mm | 1mm | 1.35mm | Lead Free | 6 | 19 Weeks | No SVHC | 220mOhm | 6 | ACTIVE (Last Updated: 20 hours ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | 270mW | GULL WING | 260 | NTJD4105C | 6 | Dual | 40 | 550mW | 2 | Other Transistors | 83 ns | 23ns | 36 ns | 50 ns | 775mA | 8V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | 20V 8V | METAL-OXIDE SEMICONDUCTOR | 920mV | 5 pF | -8V | N and P-Channel | 46pF @ 20V | 920 mV | 375m Ω @ 630mA, 4.5V | 1.5V @ 250μA | 630mA 775mA | 3nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||
| DMN32D2LDF-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/diodesincorporated-dmn32d2ldf7-datasheets-8160.pdf | 5-TSSOP, SC-70-5, SOT-353 | 2.2mm | 1mm | 1.35mm | 5 | 16 Weeks | No SVHC | 5 | yes | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | 280mW | GULL WING | 260 | 5 | 2 | 40 | 2 | FET General Purpose Power | 400mA | 10V | SILICON | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 0.4A | 30V | 2 N-Channel (Dual) Common Source | 39pF @ 3V | 1.2 Ω @ 100mA, 4V | 1.2V @ 250μA | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||
| 2N7002BKS,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/nexperiausainc-2n7002bks115-datasheets-8142.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 4 Weeks | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | Tin (Sn) | YES | GULL WING | NOT SPECIFIED | 6 | NOT SPECIFIED | 2 | R-PDSO-G6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 295mW | 0.3A | 2 N-Channel (Dual) | 50pF @ 10V | 1.6 Ω @ 500mA, 10V | 2.1V @ 250μA | 300mA | 0.6nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||
| NTZD5110NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/onsemiconductor-ntzd5110nt1g-datasheets-8130.pdf | SOT-563, SOT-666 | 1.7mm | 600μm | 1.3mm | Lead Free | 6 | 4 Weeks | 1.6Ohm | 6 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | Tin | No | e3 | YES | 900mW | FLAT | 260 | NTZD5110N | 6 | Dual | 40 | 250mW | 2 | FET General Purpose Power | 12 ns | 7.3ns | 7.3 ns | 63.7 ns | 294mA | 20V | SILICON | SWITCHING | 60V | METAL-OXIDE SEMICONDUCTOR | 60V | 2 N-Channel (Dual) | 24.5pF @ 20V | 1.6 Ω @ 500mA, 10V | 2.5V @ 250μA | 0.7nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||
| DMN61D9UDW-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmn61d9udw7-datasheets-8247.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 16 Weeks | EAR99 | e3 | Matte Tin (Sn) | 320mW | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-G6 | 350mA | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 320mW | 0.35A | 3.5Ohm | 2 N-Channel (Dual) | 28.5pF @ 30V | 2 Ω @ 50mA, 5V | 1V @ 250μA | 0.4nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6L09FUTE85LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2014 | 6-TSSOP, SC-88, SOT-363 | 12 Weeks | 300mW | 2 | Dual | Other Transistors | 85 ns | 85 ns | 200mA | -1.8V | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 0.4A | 30V | N and P-Channel | 20pF @ 5V | 700m Ω @ 200MA, 10V | 1.8V @ 100μA | 400mA 200mA | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMC2450UV-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmc2450uv7-datasheets-8253.pdf | SOT-563, SOT-666 | 6 | 16 Weeks | EAR99 | HIGH RELIABILITY | e3 | Matte Tin (Sn) | AEC-Q101 | 450mW | DUAL | FLAT | 260 | 30 | 2 | R-PDSO-F6 | 1.03A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 0.74A | 0.7Ohm | N and P-Channel | 37.1pF @ 10V | 480m Ω @ 200mA, 5V | 900mV @ 250μA | 1.03A 700mA | 0.5nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||
| PMGD280UN,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/nexperiausainc-pmgd280un115-datasheets-8262.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 4 Weeks | 6 | EAR99 | 8541.29.00.75 | e3 | Tin (Sn) | YES | GULL WING | 6 | 400mW | 2 | 870mA | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 400mW | 0.87A | 0.34Ohm | 2 N-Channel (Dual) | 45pF @ 20V | 340m Ω @ 200mA, 4.5V | 1V @ 250μA | 0.89nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||
| UM6K31NTN | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/rohmsemiconductor-2sa1774ebtlr-datasheets-4143.pdf | 6-TSSOP, SC-88, SOT-363 | Lead Free | 6 | 16 Weeks | 6 | yes | EAR99 | No | 150mW | GULL WING | 260 | 6 | 2 | 10 | 2 | FET General Purpose Power | 3.5 ns | 5ns | 28 ns | 18 ns | 250mA | 20V | SILICON | SWITCHING | 60V | METAL-OXIDE SEMICONDUCTOR | 60V | 2 N-Channel (Dual) | 15pF @ 25V | 2.4 Ω @ 250mA, 10V | 2.3V @ 1mA | Logic Level Gate, 2.5V Drive | ||||||||||||||||||||||||||||||||||||||||||||||||
| NTND31015NZTAG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/onsemiconductor-ntnd31015nztag-datasheets-8281.pdf | 6-XFLGA | Lead Free | 6 | 5 Weeks | 6 | ACTIVE (Last Updated: 1 day ago) | yes | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 125mW | BOTTOM | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 2 | 200mA | SILICON | SEPERATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | SWITCHING | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 125mW | 0.2A | 2 N-Channel (Dual) | 12.3pF @ 15V | 1.5 Ω @ 100mA, 4.5V | 1V @ 250μA | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||
| BSD223PH6327XTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/infineontechnologies-bsd223ph6327xtsa1-datasheets-8135.pdf | -20V | -350mA | 6-VSSOP, SC-88, SOT-363 | 2mm | 800μm | 1.25mm | Contains Lead | 6 | 10 Weeks | 6 | yes | EAR99 | AVALANCHE RATED | 8541.21.00.95 | AEC-Q101 | Halogen Free | 250mW | GULL WING | NOT SPECIFIED | BSD223 | NOT SPECIFIED | 2 | 3.8 ns | 5ns | 5.1 ns | 390mA | 12V | -20V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 20V | METAL-OXIDE SEMICONDUCTOR | 0.39A | 22 pF | 2 P-Channel (Dual) | 56pF @ 15V | 1.2 Ω @ 390mA, 4.5V | 1.2V @ 1.5μA | 0.62nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||
| NX3008NBKV,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/nexperiausainc-nx3008nbkv115-datasheets-7953.pdf | SOT-563, SOT-666 | 6 | 4 Weeks | e3 | Tin (Sn) | AEC-Q101; IEC-60134 | YES | FLAT | 6 | 2 | R-PDSO-F6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 0.39W | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 500mW | 0.4A | 2 N-Channel (Dual) | 50pF @ 15V | 1.4 Ω @ 350mA, 4.5V | 1.1V @ 250μA | 400mA | 0.68nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMG1016V-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/diodesincorporated-dmg1016v7-datasheets-8316.pdf | SOT-563, SOT-666 | 1.7mm | 600μm | 1.25mm | Lead Free | 6 | 15 Weeks | 3.005049mg | No SVHC | 700mOhm | 6 | yes | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | AEC-Q101 | 530mW | DUAL | FLAT | DMG1016V | 6 | 530mW | 2 | 5.1 ns | 8.1ns | 20.7 ns | 28.4 ns | 640mA | 6V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | 20V | METAL-OXIDE SEMICONDUCTOR | 1V | 0.87A | N and P-Channel | 60.67pF @ 16V | 400m Ω @ 600mA, 4.5V | 1V @ 250μA | 870mA 640mA | 0.74nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||
| 2N7002PS,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/nexperiausainc-2n7002ps125-datasheets-7999.pdf | 6-TSSOP, SC-88, SOT-363 | Lead Free | 6 | 4 Weeks | 1.6Ohm | 6 | LOGIC LEVEL COMPATIBLE | Tin | No | e3 | YES | 420mW | GULL WING | 6 | Dual | 320mW | 2 | 3 ns | 4ns | 4 ns | 10 ns | 320mA | 20V | 60V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 420mW | 60V | 2 N-Channel (Dual) | 50pF @ 10V | 1.6 Ω @ 500mA, 10V | 2.4V @ 250μA | 0.8nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||
| DMN62D0UDW-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmn62d0udw7-datasheets-8038.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 16 Weeks | EAR99 | HIGH RELIABILITY | e3 | Matte Tin (Sn) | AEC-Q101 | 320mW | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-G6 | 350mA | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 320mW | 0.35A | 2Ohm | 2 N-Channel (Dual) | 32pF @ 30V | 2 Ω @ 100mA, 4.5V | 1V @ 250μA | 0.5nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFH4253DTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2013 | /files/infineontechnologies-irfh4253dtrpbf-datasheets-7189.pdf | 8-PowerVDFN | 6mm | 900μm | 5mm | Lead Free | 14 Weeks | No SVHC | 8 | EAR99 | No | 50W | Dual | 2 | FET General Purpose Power | 145A | 20V | 25V | METAL-OXIDE SEMICONDUCTOR | 1.6V | 31W 50W | 35A | 2 N-Channel (Dual) | 1314pF @ 13V | 3.2m Ω @ 30A, 10V | 2.1V @ 35μA | 64A 145A | 15nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6N44FE,LM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2009 | /files/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | SOT-563, SOT-666 | 600μm | 6 | 16 Weeks | 6 | No | SON6-P-0.50 | 150mW | FLAT | SSM6N44 | 2 | Dual | 150mW | 2 | 150°C | 50 ns | 200 ns | 100mA | 20V | SILICON | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 0.1A | 7Ohm | 30V | 2 N-Channel (Dual) | 8.5pF @ 3V | 4 Ω @ 10mA, 4V | 1.5V @ 100μA | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||
| DMC3400SDW-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmc3400sdw13-datasheets-7674.pdf | 6-TSSOP, SC-88, SOT-363 | 1.1mm | 6 | 15 Weeks | EAR99 | e3 | Matte Tin (Sn) | 310mW | DUAL | GULL WING | 260 | 2 | 30 | 310mW | 2 | 150°C | R-PDSO-G6 | 450mA | 20V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 0.65A | 0.4Ohm | N and P-Channel | 55pF @ 15V | 400m Ω @ 590mA, 10V | 1.6V @ 250μA | 650mA 450mA | 1.4nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||
| DMN53D0LDW-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmn53d0ldw13-datasheets-5922.pdf | 6-TSSOP, SC-88, SOT-363 | 16 Weeks | 6.010099mg | EAR99 | e3 | Matte Tin (Sn) | 310mW | 260 | 2 | Dual | 30 | 2.7 ns | 2.5ns | 11 ns | 19 ns | 360mA | 20V | 50V | 50V | 2 N-Channel (Dual) | 46pF @ 25V | 1.6 Ω @ 500mA, 10V | 1.5V @ 250μA | 0.6nC @ 4.5V | Logic Level Gate |
