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ContactMOSFETs Transistors Arrays(4365)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max |
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| DMTH4007SPDQ-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmth4007spdq13-datasheets-4851.pdf | 8-PowerTDFN | 23 Weeks | 8 | yes | EAR99 | e3 | Matte Tin (Sn) | 2.6W | NOT SPECIFIED | NOT SPECIFIED | 14.2A | 40V | 2.6W | 2 N-Channel (Dual) | 2026pF @ 30V | 8.6m Ω @ 17A, 10V | 4V @ 250μA | 41.9nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4946BEY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4946beyt1e3-datasheets-5417.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 506.605978mg | No SVHC | 41MOhm | 8 | EAR99 | No | e3 | MATTE TIN | 3.7W | GULL WING | 260 | SI4946 | 8 | Dual | 30 | 2.4W | 2 | 10 ns | 12ns | 10 ns | 25 ns | 5.3A | 20V | SILICON | METAL-OXIDE SEMICONDUCTOR | 2.4V | 30A | 60V | 2 N-Channel (Dual) | 840pF @ 30V | 41m Ω @ 5.3A, 10V | 3V @ 250μA | 6.5A | 25nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||
| NVMFD5C462NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 2017 | /files/onsemiconductor-nvmfd5c462nt1g-datasheets-4877.pdf | 8-PowerTDFN | 48 Weeks | yes | EAR99 | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 40V | 3.2W Ta 50W Tc | 2 N-Channel (Dual) | 1020pF @ 25V | 5.4m Ω @ 25A, 10V | 3.5V @ 250μA | 17.6A Ta 70A Tc | 16nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ504EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sqj504ept1ge3-datasheets-4880.pdf | PowerPAK® SO-8 Dual | 12 Weeks | PowerPAK® SO-8 Dual | 40V | 34W Tc | N and P-Channel | 1900pF @ 25V 4600pF @ 25V | 7.5mOhm @ 8A, 10V, 17mOhm @ 8A, 10V | 2.5V @ 250μA | 30A Tc | 30nC @ 10V, 85nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIZ300DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-siz300dtt1ge3-datasheets-4806.pdf | 8-PowerWDFN | 3mm | 750μm | 3mm | Lead Free | 8 | 14 Weeks | 8 | yes | EAR99 | No | e3 | MATTE TIN | 31W | 260 | SIZ300 | 8 | 2 | Dual | 40 | 2 | FET General Purpose Power | 80ns | 40 ns | 28A | 20V | SILICON | DRAIN SOURCE | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 16.7W 31W | 11A | 30A | 7 mJ | 30V | 2 N-Channel (Half Bridge) | 400pF @ 15V | 24m Ω @ 9.8A, 10V | 2.4V @ 250μA | 11A 28A | 12nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||
| SI4340CDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4340cdyt1e3-datasheets-4887.pdf | 14-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | 186.993455mg | 14 | 5.4W | SI4340 | 2 | 14-SOIC | 1.3nF | 22 ns | 10ns | 10 ns | 32 ns | 11.5A | 16V | 20V | 3W 5.4W | 9.4mOhm | 2 N-Channel (Dual) | 1300pF @ 10V | 9.4mOhm @ 11.5A, 10V | 3V @ 250μA | 14.1A 20A | 32nC @ 10V | Logic Level Gate | 9.4 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ZXMC3A16DN8TA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/diodesincorporated-zxmc3a16dn8tc-datasheets-5510.pdf | 30V | 6.4A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 17 Weeks | 73.992255mg | No SVHC | 48mOhm | 8 | yes | EAR99 | LOW THRESHOLD | No | e3 | Matte Tin (Sn) | 2.1W | DUAL | GULL WING | 260 | 8 | 2 | 40 | 2.1W | 2 | Other Transistors | 3 ns | 6.4ns | 9.4 ns | 21.6 ns | 6.4A | 20V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 1V | 1.25W | 4.9A | 30V | N and P-Channel | 796pF @ 25V | 35m Ω @ 9A, 10V | 1V @ 250μA (Min) | 4.9A 4.1A | 17.5nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||
| SI5902BDC-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2010 | /files/vishaysiliconix-si5902bdct1e3-datasheets-1153.pdf | 8-SMD, Flat Lead | 1.1mm | Lead Free | 14 Weeks | 84.99187mg | No SVHC | 65mOhm | 8 | No | 3.12W | SI5902 | 2 | Dual | 1.5W | 2 | 150°C | 1206-8 ChipFET™ | 220pF | 4 ns | 10 ns | 3.7A | 20V | 30V | 1.5V | 3.12W | 53mOhm | 30V | 2 N-Channel (Dual) | 220pF @ 15V | 1.5 V | 65mOhm @ 3.1A, 10V | 3V @ 250μA | 4A | 7nC @ 10V | Logic Level Gate | 65 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||
| SQJB40EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sqjb40ept1ge3-datasheets-4689.pdf | PowerPAK® SO-8 Dual | 14 Weeks | PowerPAK® SO-8 Dual | 40V | 34W | 2 N-Channel (Dual) | 1900pF @ 25V | 8mOhm @ 8A, 10V | 2.5V @ 250μA | 30A Tc | 35nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK9K8R7-40EX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/nexperiausainc-buk9k8r740ex-datasheets-4725.pdf | SOT-1205, 8-LFPAK56 | Lead Free | 6 | 12 Weeks | 8 | AEC-Q101; IEC-60134 | 53W | GULL WING | 8 | Dual | 53W | 2 | R-PDSO-G6 | 10.8 ns | 19.8ns | 18.2 ns | 20.5 ns | 30A | 15V | SILICON | DRAIN | SWITCHING | 40V | METAL-OXIDE SEMICONDUCTOR | 0.0094Ohm | 40V | 2 N-Channel (Dual) | 2110pF @ 25V | 8m Ω @ 10A, 10V | 2.1V @ 1mA | 15.7nC @ 5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD87501LT | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 10-XFLGA | 3.37mm | 1.47mm | Lead Free | 10 | 6 Weeks | No SVHC | 10 | ACTIVE (Last Updated: 4 days ago) | yes | 200μm | 2.5W | BOTTOM | NO LEAD | 260 | CSD87501 | NOT SPECIFIED | 2 | 164 ns | 260ns | 712 ns | 709 ns | 14A | 20V | SILICON | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 1.8V | 6.6mOhm | 198 pF | 2 N-Channel (Dual) Common Drain | 2.3V @ 250μA | 40nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||
| QS8K13TCR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/rohmsemiconductor-qs8k13tcr-datasheets-4730.pdf | 8-SMD, Flat Lead | 8 | 20 Weeks | yes | EAR99 | e2 | Tin/Copper (Sn/Cu) | 550mW | 260 | 8 | 10 | 2 | FET General Purpose Power | Not Qualified | R-PDSO-F8 | 6A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 550mW | 6A | 18A | 0.039Ohm | 2 N-Channel (Dual) | 390pF @ 10V | 28m Ω @ 6A, 10V | 2.5V @ 1mA | 20nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ940EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sqj940ept1ge3-datasheets-4787.pdf | PowerPAK® SO-8 Dual | Lead Free | 4 | 12 Weeks | Unknown | 8 | EAR99 | No | PowerPAK SO-8L Dual Asymmetric | 43W | SINGLE | GULL WING | 2 | Dual | 2 | R-PSSO-G4 | 7.7 ns | 9.5ns | 13.5 ns | 47 ns | 18A | 20V | SILICON | DRAIN | 40V | 40V | METAL-OXIDE SEMICONDUCTOR | 2V | 48W 43W | 15A | 60A | 0.016Ohm | 2 N-Channel (Dual) | 896pF @ 20V | 16m Ω @ 15A, 10V | 2.5V @ 250μA | 15A Ta 18A Tc | 20nC @ 20V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||
| BUK9K5R6-30EX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/nexperiausainc-buk9k5r630ex-datasheets-4814.pdf | SOT-1205, 8-LFPAK56 | 6 | 12 Weeks | 4 | 64W | GULL WING | 8 | 2 | R-PDSO-G6 | 40A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 64W | 305A | 0.0058Ohm | 169 mJ | 2 N-Channel (Dual) | 2480pF @ 25V | 5.8m Ω @ 10A, 5V | 2.1V @ 1mA | 22.6nC @ 5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJB60EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sqjb60ept1ge3-datasheets-4698.pdf | PowerPAK® SO-8 Dual | 4 | 14 Weeks | No SVHC | 6 | EAR99 | unknown | YES | 48W | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PSSO-G4 | 30A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | 60V | METAL-OXIDE SEMICONDUCTOR | 2V | 84A | 0.012Ohm | 2 N-Channel (Dual) | 1600pF @ 25V | 12m Ω @ 10A, 10V | 2.5V @ 250μA | 30A Tc | 30nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN2029USD-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/diodesincorporated-dmn2029usd13-datasheets-8935.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.95mm | 1.5mm | 3.95mm | 8 | 23 Weeks | No SVHC | 8 | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | AEC-Q101 | 1.2W | GULL WING | 260 | 30 | 2 | 16.5 ns | 33.3ns | 53.5 ns | 119.3 ns | 5.8A | 8V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 0.025Ohm | 2 N-Channel (Dual) | 1171pF @ 10V | 25m Ω @ 6.5A, 4.5V | 1.5V @ 250μA | 18.6nC @ 8V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||
| NTHD4508NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/onsemiconductor-nthd4508nt1g-datasheets-9437.pdf | 20V | 3.1A | 8-SMD, Flat Lead | 3.1mm | 1.1mm | 1.7mm | Lead Free | 8 | 6 Weeks | No SVHC | 8 | ACTIVE (Last Updated: 11 hours ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | 2.1W | C BEND | 260 | NTHD4508N | 8 | Dual | 40 | 1.13W | 2 | FET General Purpose Power | 5 ns | 15ns | 15 ns | 10 ns | 4.1A | 12V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 1.2V | 10A | 0.075Ohm | 20V | 2 N-Channel (Dual) | 180pF @ 10V | 75m Ω @ 3.1A, 4.5V | 1.2V @ 250μA | 3A | 4nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||
| DMP2035UTS-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/diodesincorporated-dmp2035uts13-datasheets-9502.pdf | 8-TSSOP (0.173, 4.40mm Width) | 8 | 15 Weeks | 157.991892mg | No SVHC | 8 | yes | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | 890mW | GULL WING | 260 | DMP2035UTS | 8 | 40 | 890mW | 2 | Other Transistors | 16.8 ns | 12.4ns | 42.4 ns | 94.1 ns | 6.04A | 8V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 0.045Ohm | -20V | 2 P-Channel (Dual) Common Drain | 1610pF @ 10V | 35m Ω @ 4A, 4.5V | 1V @ 250μA | 15.4nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||
| DMC3016LSD-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmc3016lsd13-datasheets-9403.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 23 Weeks | 73.992255mg | 8 | EAR99 | HIGH RELIABILITY | e3 | Matte Tin (Sn) | AEC-Q101 | 1.2W | DUAL | GULL WING | 260 | 2 | 30 | 2 | 9.7 ns | 17.1ns | 40.4 ns | 60.5 ns | 6.2A | 20V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 0.016Ohm | 30V | N and P-Channel | 1415pF @ 15V | 16m Ω @ 12A, 10V | 2.3V @ 250μA | 8.2A 6.2A | 25.1nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||
| FDC6320C | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/onsemiconductor-fdc6320c-datasheets-9317.pdf | 220mA | SOT-23-6 Thin, TSOT-23-6 | Lead Free | 6 | 10 Weeks | 36mg | No SVHC | 4Ohm | 6 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | LOGIC LEVEL COMPATIBLE | No | e3 | Tin (Sn) | 700mW | GULL WING | Dual | 900mW | 2 | Other Transistors | 6ns | 6 ns | 7.4 ns | 220mA | 8V | 25V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 850mV | 25V | N and P-Channel | 9.5pF @ 10V | 850 mV | 4 Ω @ 400mA, 4.5V | 1.5V @ 250μA | 220mA 120mA | 0.4nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||
| DMC1030UFDBQ-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/diodesincorporated-dmc1030ufdbq7-datasheets-9390.pdf | 6-UDFN Exposed Pad | 6 | 15 Weeks | EAR99 | HIGH RELIABILITY | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 1.36W | DUAL | NO LEAD | 2 | S-PDSO-N6 | 5.1A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL AND P-CHANNEL | 12V | 12V | METAL-OXIDE SEMICONDUCTOR | 1.36W | 0.034Ohm | N and P-Channel Complementary | 1003pF @ 6V | 34m Ω @ 4.6A, 4.5V | 1V @ 250μA | 23.1nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMC3032LSD-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/diodesincorporated-dmc3032lsd13-datasheets-9196.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 15 Weeks | 73.992255mg | No SVHC | 8 | yes | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | 2.5W | DUAL | GULL WING | 260 | 8 | 2 | 40 | 2 | Other Transistors | 10.1 ns | 6.5ns | 22.2 ns | 50.1 ns | 7A | 20V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | 30V | METAL-OXIDE SEMICONDUCTOR | -30V | N and P-Channel | 404.5pF @ 15V | 32m Ω @ 7A, 10V | 2.1V @ 250μA | 8.1A 7A | 9.2nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||
| BSL215CH6327XTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-bsl215ch6327xtsa1-datasheets-4311.pdf | SOT-23-6 Thin, TSOT-23-6 | 1.1mm | Lead Free | 6 | 10 Weeks | No SVHC | 6 | yes | EAR99 | AVALANCHE RATED | e3 | Tin (Sn) | Halogen Free | 500mW | DUAL | GULL WING | 2 | 500mW | 2 | 1.5A | 12V | -20V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | 20V | METAL-OXIDE SEMICONDUCTOR | -900μV | 0.14Ohm | 9 pF | N and P-Channel Complementary | 143pF @ 10V | 140m Ω @ 1.5A, 4.5V | 1.2V @ 3.7μA | 0.73nC @ 4.5V | Logic Level Gate, 2.5V Drive | ||||||||||||||||||||||||||||||||||||||||||||||||
| FDC6310P | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/onsemiconductor-fdc6310p-datasheets-9460.pdf | -20V | -2.2A | SOT-23-6 Thin, TSOT-23-6 | 3mm | 1mm | 1.7mm | Lead Free | 6 | 10 Weeks | 36mg | No SVHC | 125MOhm | 6 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | 960mW | GULL WING | Dual | 960mW | 2 | Other Transistors | 9 ns | 12ns | 12 ns | 10 ns | 2.2A | 12V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | -1V | 700mW | -20V | 2 P-Channel (Dual) | 337pF @ 10V | 125m Ω @ 2.2A, 4.5V | 1.5V @ 250μA | 5.2nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||
| QS6M3TR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | 1.5A | SOT-23-6 Thin, TSOT-23-6 | Lead Free | 6 | 25 Weeks | No SVHC | 360MOhm | 6 | yes | EAR99 | No | e1 | 900mW | GULL WING | 260 | *M3 | 6 | Dual | 10 | 1.25W | 2 | Other Transistors | 12ns | 12 ns | 45 ns | 1.5A | 12V | 30V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | 30V 20V | METAL-OXIDE SEMICONDUCTOR | 1.5V | -20V | N and P-Channel | 80pF @ 10V | 1.5 V | 230m Ω @ 1.5A, 4.5V | 1.5V @ 1mA | 1.6nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||
| DMN2016UTS-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/diodesincorporated-dmn2016uts13-datasheets-9473.pdf | 8-TSSOP (0.173, 4.40mm Width) | 4.5mm | 1.025mm | 3.1mm | Lead Free | 8 | 16 Weeks | 157.991892mg | No SVHC | 14.5mOhm | 8 | EAR99 | No | e3 | Matte Tin (Sn) | 880mW | GULL WING | DMN2016U | 8 | Dual | 880mW | 2 | FET General Purpose Power | 10.39 ns | 11.66ns | 16.27 ns | 59.38 ns | 8.58A | 8V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 20V | 2 N-Channel (Dual) Common Drain | 1495pF @ 10V | 14.5m Ω @ 9.4A, 4.5V | 1V @ 250μA | 16.5nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||
| ECH8693R-TL-W | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/onsemiconductor-ech8693rtlw-datasheets-9482.pdf | 8-SMD, Flat Lead | Lead Free | 8 | 17 Weeks | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | Tin | No | e6 | 1.4W | 8 | 2 | 2 | 545 ns | 525ns | 22.2 μs | 18.65 μs | 14A | 12.5V | SILICON | SWITCHING | 24V | METAL-OXIDE SEMICONDUCTOR | 60A | 0.0091Ohm | 24V | 2 N-Channel (Dual) Common Drain | 7m Ω @ 5A, 4.5V | 13nC @ 4.5V | Logic Level Gate, 2.5V Drive | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD75208W1015 | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 6-UFBGA, DSBGA | 1.5mm | 1mm | 1.8mm | Lead Free | 6 | 6 Weeks | No SVHC | 6 | ACTIVE (Last Updated: 1 day ago) | yes | 2mm | EAR99 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 750mW | BOTTOM | BALL | 260 | CSD75208 | 2 | NOT SPECIFIED | 2 | 9 ns | 5ns | 11 ns | 29 ns | -1.6A | -6V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | -800mV | 0.15Ohm | 10 pF | 2 P-Channel (Dual) Common Source | 410pF @ 10V | 68m Ω @ 1A, 4.5V | 1.1V @ 250μA | 1.6A | 2.5nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||
| DMC1229UFDB-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/diodesincorporated-dmc1229ufdb7-datasheets-9217.pdf | 6-UDFN Exposed Pad | 2.08mm | 555μm | 2.075mm | Lead Free | 6 | 15 Weeks | 6 | EAR99 | HIGH RELIABILITY | Gold | No | e4 | 1.4W | DUAL | 260 | 2 | 30 | 2 | Other Transistors | 5.7 ns | 11.5ns | 26.4 ns | 27.8 ns | 3.8A | 8V | SILICON | DRAIN | SWITCHING | N-CHANNEL AND P-CHANNEL | 12V | METAL-OXIDE SEMICONDUCTOR | N and P-Channel | 914pF @ 6V | 29m Ω @ 5A, 4.5V | 1V @ 250μA | 5.6A 3.8A | 19.6nC @ 8V | ||||||||||||||||||||||||||||||||||||||||||||||
| DMC3025LSD-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/diodesincorporated-dmc3025lsd13-datasheets-9268.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.95mm | 1.5mm | 3.95mm | Lead Free | 8 | 17 Weeks | 73.992255mg | No SVHC | 8 | EAR99 | HIGH RELIABILITY | e3 | Matte Tin (Sn) | AEC-Q101 | 1.2W | DUAL | GULL WING | 260 | DMC3025 | 2 | 30 | 2 | Other Transistors | 6.8 ns | 4.9ns | 12.4 ns | 28.4 ns | 4.2A | 20V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | 30V | METAL-OXIDE SEMICONDUCTOR | 5.3A | -30V | N and P-Channel | 501pF @ 15V | 20m Ω @ 7.4A, 10V | 2V @ 250μA | 6.5A 4.2A | 9.8nC @ 10V | Logic Level Gate |
