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ContactMOSFETs Transistors Arrays(4365)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Row Spacing | Threshold Voltage | Power - Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max |
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| PMDPB56XNEAX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/nexperiausainc-pmdpb56xneax-datasheets-6003.pdf | 6-UDFN Exposed Pad | 6 | 8 Weeks | AEC-Q101; IEC-60134 | YES | NO LEAD | 2 | R-PDSO-N6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 485mW Ta | 3.1A | 0.072Ohm | 2 N-Channel (Dual) | 256pF @ 15V | 72m Ω @ 3.1A, 4.5V | 1.25V @ 250μA | 3.1A Ta | 5nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TT8M1TR | ROHM Semiconductor | $0.75 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-tt8m1tr-datasheets-6013.pdf | 8-SMD, Flat Lead | Lead Free | 8 | 10 Weeks | yes | EAR99 | e2 | TIN COPPER | 1W | DUAL | 260 | 8 | 10 | 2 | Other Transistors | Not Qualified | R-PDSO-F8 | 2.5A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 1W | 0.09Ohm | N and P-Channel | 260pF @ 10V | 72m Ω @ 2.5A, 4.5V | 1V @ 1mA | 3.6nC @ 4.5V | Logic Level Gate, 1.5V Drive | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| NDS8961 | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/rochesterelectronicsllc-nds8961-datasheets-6040.pdf | 8-SOIC (0.154, 3.90mm Width) | 8-SOIC | 30V | 900mW | 2 N-Channel (Dual) | 190pF @ 15V | 100mOhm @ 3.1A, 10V | 3V @ 250μA | 3.1A | 10nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7319TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/infineontechnologies-irf7319trpbf-datasheets-5882.pdf | 6.5A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Contains Lead, Lead Free | 8 | 12 Weeks | No SVHC | 29mOhm | 8 | EAR99 | AVALANCHE RATED, ULTRA LOW RESISTANCE | Tin | No | 2W | DUAL | GULL WING | IRF7319PBF | 2W | 2 | 13ns | 32 ns | 34 ns | 6.5A | 20V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 6.3 mm | 1V | 30A | 30V | N and P-Channel | 650pF @ 25V | 1 V | 29m Ω @ 5.8A, 10V | 1V @ 250μA | 33nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||
| NVMFD5C446NLT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2013 | /files/onsemiconductor-nvmfd5c446nlwft1g-datasheets-5767.pdf | 8-PowerTDFN | 1.1mm | 48 Weeks | ACTIVE (Last Updated: 3 days ago) | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | 2 | NOT SPECIFIED | 175°C | 14.8 ns | 34.9 ns | 20V | 3.5W Ta | 40V | 2 N-Channel (Dual) | 3170pF @ 25V | 2.65m Ω @ 20A, 10V | 2.2V @ 90μA | 25A Ta 145A Tc | 25nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMC4040SSD-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/diodesincorporated-dmc4040ssd13-datasheets-5835.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.95mm | 1.5mm | 3.95mm | Lead Free | 8 | 17 Weeks | 73.992255mg | No SVHC | 8 | yes | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) - annealed | AEC-Q101 | 1.8W | DUAL | GULL WING | 260 | DMC4040 | 8 | 40 | 2.14W | 2 | Other Transistors | 6.9 ns | 14.7ns | 30.9 ns | 53.7 ns | 7.5A | 20V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | 40V | METAL-OXIDE SEMICONDUCTOR | 5.7A | 0.04Ohm | -40V | N and P-Channel | 1790pF @ 20V | 25m Ω @ 3A, 10V | 1.8V @ 250μA | 6.8A | 37.6nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||
| SI9926CDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si9926cdyt1e3-datasheets-1229.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.75mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | No SVHC | 18mOhm | 8 | yes | EAR99 | Tin | No | e3 | 3.1W | GULL WING | 260 | SI9926 | 8 | Dual | 30 | 2W | 2 | FET General Purpose Powers | 150°C | 15 ns | 12ns | 10 ns | 35 ns | 8A | 12V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 1.5V | 8A | 20V | 2 N-Channel (Dual) | 1200pF @ 10V | 18m Ω @ 8.3A, 4.5V | 1.5V @ 250μA | 33nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||
| NTMD5838NLR2G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-ntmd5838nlr2g-datasheets-5840.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 52 Weeks | No SVHC | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | Tin | No | e3 | YES | 2.1W | GULL WING | 8 | Dual | 2.1W | 2 | FET General Purpose Power | 11 ns | 23ns | 4 ns | 17 ns | 7.4A | 20V | SILICON | 40V | METAL-OXIDE SEMICONDUCTOR | 1.8V | 35A | 40V | 2 N-Channel (Dual) | 785pF @ 20V | 25m Ω @ 7A, 10V | 3V @ 250μA | 17nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||
| IRF7316TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf7316trpbf-datasheets-5874.pdf | -30V | -4.9A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.75mm | 3.9878mm | Contains Lead, Lead Free | 8 | 12 Weeks | No SVHC | 58mOhm | 8 | EAR99 | AVALANCHE RATED | Tin | No | 2W | GULL WING | IRF7316PBF | 2 | Dual | 2W | 2 | 150°C | 13 ns | 13ns | 32 ns | 34 ns | -4.9A | 20V | SILICON | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | -1V | 66 ns | 30A | 140 mJ | -30V | 2 P-Channel (Dual) | 710pF @ 25V | -1 V | 58m Ω @ 4.9A, 10V | 1V @ 250μA | 4.9A | 34nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||
| SI7997DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si7997dpt1ge3-datasheets-5919.pdf | PowerPAK® SO-8 Dual | 1.12mm | Lead Free | 5 | 14 Weeks | 506.605978mg | No SVHC | 5.5mOhm | 8 | yes | EAR99 | unknown | e3 | Matte Tin (Sn) | 46W | C BEND | 260 | SI7997 | 8 | Dual | 40 | 3.5W | 2 | Other Transistors | Not Qualified | 150°C | R-XDSO-C5 | 15 ns | 40 ns | 115 ns | -20.8A | 20V | SILICON | DRAIN | 30V | METAL-OXIDE SEMICONDUCTOR | -2.2V | 60A | 100A | 45 mJ | -30V | 2 P-Channel (Dual) | 6200pF @ 15V | 5.5m Ω @ 20A, 10V | 2.2V @ 250μA | 60A | 160nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||
| SMA5131 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2010 | /files/sanken-sma5131-datasheets-5922.pdf | 12-SIP | Lead Free | 12 | 12 Weeks | yes | EAR99 | unknown | SINGLE | NOT SPECIFIED | 12 | NOT SPECIFIED | 6 | Not Qualified | R-PSIP-T12 | 2A | SILICON | COMPLEX | N-CHANNEL | 250V | 250V | METAL-OXIDE SEMICONDUCTOR | 2A | 1.8Ohm | 3 N and 3 P-Channel (3-Phase Bridge) | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7328TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf7328trpbf-datasheets-5865.pdf | -30V | -8A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.75mm | 3.9878mm | Lead Free | 8 | 12 Weeks | No SVHC | 21MOhm | 8 | EAR99 | ULTRA LOW RESISTANCE | Tin | No | e3 | 2W | GULL WING | IRF7328PBF | 2 | Dual | 2W | 2 | Other Transistors | 150°C | 13 ns | 15ns | 98 ns | 198 ns | -8A | 20V | -30V | SILICON | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 6.3 mm | -1V | 56 ns | 8A | -30V | 2 P-Channel (Dual) | 2675pF @ 25V | -2.5 V | 21m Ω @ 8A, 10V | 2.5V @ 250μA | 8A | 78nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||
| SI9936DY | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rochesterelectronicsllc-si9936dy-datasheets-5721.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | yes | e3 | MATTE TIN | YES | GULL WING | 260 | 8 | NOT SPECIFIED | 2 | COMMERCIAL | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 900mW | 5A | 40A | 0.05Ohm | 2 N-Channel (Dual) | 525pF @ 15V | 50m Ω @ 5A, 10V | 1V @ 250μA | 5A | 35nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ960EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sqj960ept1ge3-datasheets-5136.pdf | PowerPAK® SO-8 Dual | Lead Free | 12 Weeks | 506.605978mg | Unknown | 40mOhm | 8 | No | 34W | 2 | Dual | 34W | 1 | PowerPAK® SO-8 Dual | 735pF | 6 ns | 8ns | 7 ns | 19 ns | 8A | 20V | 60V | 2V | 34W | 30mOhm | 2 N-Channel (Dual) | 735pF @ 25V | 36mOhm @ 5.3A, 10V | 2.5V @ 250μA | 8A | 20nC @ 10V | Logic Level Gate | 36 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||
| AO4805 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2002 | 8-SOIC (0.154, 3.90mm Width) | 18 Weeks | 8 | 2W | 9A | 30V | 2W | 2 P-Channel (Dual) | 2600pF @ 15V | 19m Ω @ 8A, 10V | 2.8V @ 250μA | 39nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AO4882 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2011 | 8-SOIC (0.154, 3.90mm Width) | 1.75mm | Lead Free | 18 Weeks | 8 | 2W | 2W | 2 | 150°C | 4 ns | 15 ns | 8A | 20V | 40V | 40V | 2 N-Channel (Dual) | 415pF @ 20V | 19m Ω @ 8A, 10V | 2.4V @ 250μA | 12nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDS4559 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/onsemiconductor-fds4559-datasheets-5774.pdf | 4.5A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.75mm | 4mm | Lead Free | 8 | 8 Weeks | 187mg | No SVHC | 55MOhm | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | Tin | No | e3 | 2W | GULL WING | 2 | Dual | 2W | 2 | Other Transistors | 175°C | 10ns | 12 ns | 19 ns | 4.5A | 20V | 60V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 2.2V | 1W | 90 mJ | 60V | N and P-Channel | 650pF @ 25V | 2.2 V | 55m Ω @ 4.5A, 10V | 3V @ 250μA | 4.5A 3.5A | 18nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||
| NVMFD5C650NLWFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2013 | /files/onsemiconductor-nvmfd5c650nlwft1g-datasheets-5813.pdf | 8-PowerTDFN | 48 Weeks | ACTIVE (Last Updated: 3 days ago) | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 60V | 3.5W Ta 125W Tc | 2 N-Channel (Dual) | 2546pF @ 25V | 4.2m Ω @ 20A, 10V | 2.2V @ 98μA | 21A Ta 111A Tc | 16nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ECH8601M-TL-H | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ech8601mtlh-datasheets-5830.pdf | 8-SMD, Flat Lead | 8-ECH | 24V | 2 N-Channel (Dual) Common Drain | 23mOhm @ 4A, 4.5V | 1.3V @ 1mA | 8A Ta | 7.5nC @ 4.5V | Logic Level Gate, 2.5V Drive | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STL20DN10F7 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DeepGATE™, STripFET™ VII | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stl20dn10f7-datasheets-5098.pdf | 8-PowerVDFN | Lead Free | 6 | 65mOhm | 8 | ACTIVE (Last Updated: 8 months ago) | EAR99 | 62.5W | FLAT | NOT SPECIFIED | STL20 | 2 | Dual | NOT SPECIFIED | 2 | FET General Purpose Powers | R-PDSO-F6 | 6.3 ns | 3ns | 4 ns | 11 ns | 20A | 20V | SILICON | DRAIN | SWITCHING | 100V | METAL-OXIDE SEMICONDUCTOR | 100V | 2 N-Channel (Dual) | 408pF @ 50V | 67m Ω @ 2.5A, 10V | 4.5V @ 250μA | 7.8nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||
| ZXMC6A09DN8TA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/diodesincorporated-zxmc6a09dn8ta-datasheets-5072.pdf | 5.1A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 17 Weeks | 73.992255mg | No SVHC | 55mOhm | 8 | yes | EAR99 | LOW THRESHOLD | No | e3 | Matte Tin (Sn) | 2.1W | DUAL | GULL WING | 260 | 8 | 2 | 40 | 2.1W | 2 | 4.6 ns | 5.8ns | 23 ns | 55 ns | 5.1A | 20V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 1.8W | 3.9A | 60V | N and P-Channel | 1407pF @ 40V | 45m Ω @ 8.2A, 10V | 1V @ 250μA (Min) | 3.9A 3.7A | 24.2nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||
| FDW2521C | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdz2554pz-datasheets-2350.pdf | 8-TSSOP (0.173, 4.40mm Width) | 8 | yes | EAR99 | unknown | e3 | TIN | YES | DUAL | GULL WING | 260 | 8 | NOT SPECIFIED | 2 | Not Qualified | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 600mW | MO-153AA | 5.5A | 0.021Ohm | N and P-Channel | 1082pF @ 10V | 21m Ω @ 5.5A, 4.5V | 1.5V @ 250μA | 5.5A 3.8A | 17nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI6968BEDQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si6968bedqt1e3-datasheets-5597.pdf | 8-TSSOP (0.173, 4.40mm Width) | 3mm | 1.2mm | 4.4mm | Lead Free | 8 | 14 Weeks | 157.991892mg | 22MOhm | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | 1W | GULL WING | 260 | SI6968 | 8 | Dual | 30 | 1W | 2 | FET General Purpose Powers | 150°C | 245 ns | 330ns | 330 ns | 860 ns | 5.2A | 12V | SILICON | 20V | METAL-OXIDE SEMICONDUCTOR | 20V | 2 N-Channel (Dual) Common Drain | 22m Ω @ 6.5A, 4.5V | 1.6V @ 250μA | 18nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||
| IPG20N04S4L07ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-ipg20n04s4l07atma1-datasheets-5559.pdf | 8-PowerVDFN | Contains Lead | 8 | 12 Weeks | 8 | EAR99 | LOGIC LEVEL COMPATIBLE | not_compliant | e3 | Tin (Sn) | Halogen Free | 65W | FLAT | NOT SPECIFIED | NOT SPECIFIED | 2 | 9 ns | 4ns | 25 ns | 50 ns | 20A | 16V | 40V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | METAL-OXIDE SEMICONDUCTOR | 65W | 0.0072Ohm | 230 mJ | 2 N-Channel (Dual) | 3980pF @ 25V | 7.2m Ω @ 17A, 10V | 2.2V @ 30μA | 50nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||
| DMG6602SVT-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/diodesincorporated-dmg6602svt7-datasheets-5649.pdf | SOT-23-6 Thin, TSOT-23-6 | 2.9mm | 1mm | 1.6mm | Lead Free | 6 | No SVHC | 95mOhm | 6 | yes | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | 840mW | DUAL | GULL WING | 260 | DMG6602 | 6 | 40 | 840mW | 2 | Other Transistors | 150°C | 3 ns | 5ns | 3 ns | 13 ns | 2.8A | 20V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 3.4A | 13A | 30V | N and P-Channel | 400pF @ 15V | 60m Ω @ 3.1A, 10V | 2.3V @ 250μA | 3.4A 2.8A | 13nC @ 10V | Logic Level Gate, 4.5V Drive | ||||||||||||||||||||||||||||||||||||||||
| SLA5075 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2001 | /files/sanken-sla5075-datasheets-5663.pdf | 15-SIP Exposed Tab, Formed Leads | 15 | 12 Weeks | yes | 8541.29.00.95 | 5W | SINGLE | NOT SPECIFIED | 15 | NOT SPECIFIED | 6 | Not Qualified | R-PSFM-T15 | 5A | SILICON | COMPLEX | SWITCHING | 500V | 500V | METAL-OXIDE SEMICONDUCTOR | 5W | 5A | 10A | 45 mJ | 6 N-Channel (3-Phase Bridge) | 770pF @ 10V | 1.4 Ω @ 2.5A, 10V | 4V @ 1mA | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AO4840 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2011 | 8-SOIC (0.154, 3.90mm Width) | 8 | No | 2W | 2W | 2 | 6A | 20V | 40V | 2 N-Channel (Dual) | 650pF @ 20V | 30m Ω @ 6A, 10V | 3V @ 250μA | 10.8nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDG8842CZ | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/onsemiconductor-fdg8842cz-datasheets-5670.pdf | 6-TSSOP, SC-88, SOT-363 | 2mm | 1mm | 1.25mm | Lead Free | 6 | 10 Weeks | 28mg | No SVHC | 400MOhm | 6 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | Tin | e3 | 300mW | GULL WING | NOT SPECIFIED | Dual | NOT SPECIFIED | 360mW | 2 | Other Transistors | Not Qualified | 16ns | 16 ns | 35 ns | 750mA | -8V | 30V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | 30V 25V | METAL-OXIDE SEMICONDUCTOR | 1V | 0.75A | 25V | N and P-Channel | 120pF @ 10V | 1 V | 400m Ω @ 750mA, 4.5V | 1.5V @ 250μA | 750mA 410mA | 1.44nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||
| IRF7501TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/infineontechnologies-irf7501trpbf-datasheets-5385.pdf | 20V | 2.4A | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 3mm | 860μm | 3mm | Lead Free | 8 | 12 Weeks | No SVHC | 135mOhm | 8 | EAR99 | ULTRA LOW RESISTANCE | No | e3 | Matte Tin (Sn) | 1.25W | GULL WING | IRF7501PBF | Dual | 1.25W | 2 | 5.7 ns | 24ns | 16 ns | 15 ns | 2.4A | 12V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 700mV | 19A | 20V | 2 N-Channel (Dual) | 260pF @ 15V | 700 mV | 135m Ω @ 1.7A, 4.5V | 700mV @ 250μA | 8nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||
| IRF7301TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/infineontechnologies-irf7301trpbf-datasheets-5527.pdf | 20V | 5.2A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Contains Lead, Lead Free | 8 | 12 Weeks | No SVHC | 50mOhm | 8 | EAR99 | ULTRA LOW RESISTANCE | No | 2W | GULL WING | IRF7301PBF | Dual | 2W | 2 | 9 ns | 42ns | 51 ns | 32 ns | 5.2A | 12V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 6.3 mm | 700mV | 44 ns | 20V | 2 N-Channel (Dual) | 660pF @ 15V | 700 mV | 50m Ω @ 2.6A, 4.5V | 700mV @ 250μA | 20nC @ 4.5V | Logic Level Gate |
