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ContactMOSFETs Transistors Arrays(4365)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max |
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| ALD110900ASAL | Advanced Linear Devices Inc. | $5.21 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | EPAD®, Zero Threshold™ | Surface Mount | Surface Mount | 0°C~70°C TJ | Tube | 1 (Unlimited) | 70°C | 0°C | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/advancedlineardevicesinc-ald110900apal-datasheets-3190.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 Weeks | 8 | 500mW | Dual | 500mW | 8-SOIC | 2.5pF | 10 ns | 12mA | 10.6V | 10.6V | 500mW | 500Ohm | 10V | 2 N-Channel (Dual) Matched Pair | 2.5pF @ 5V | 500Ohm @ 4V | 10mV @ 1μA | Standard | 500 Ω | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFD5C674NLT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-nvmfd5c674nlwft1g-datasheets-9508.pdf | 8-PowerTDFN | 6 | 48 Weeks | ACTIVE (Last Updated: 3 days ago) | yes | not_compliant | e3 | Tin (Sn) | YES | FLAT | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-F6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 3W Ta 37W Tc | 119A | 0.0204Ohm | 61 mJ | 2 N-Channel (Dual) | 640pF @ 25V | 14.4m Ω @ 10A, 10V | 2.2V @ 25μA | 11A Ta 42A Tc | 4.7nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||
| SIA918EDJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sia918edjt1ge3-datasheets-6820.pdf | PowerPAK® SC-70-6 Dual | 14 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 30V | 7.8W | 2 N-Channel (Dual) | 58m Ω @ 3A, 4.5V | 900mV @ 250μA | 4.5A Tc | 5.5nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK9K32-100EX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/nexperiausainc-buk9k32100ex-datasheets-6681.pdf | SOT-1205, 8-LFPAK56 | 4 | 12 Weeks | AVALANCHE RATED | AEC-Q101; IEC-60134 | 64W | SINGLE | GULL WING | 8 | 2 | Dual | 2 | R-PSSO-G4 | 12.6 ns | 22ns | 23.1 ns | 39.5 ns | 26A | 15V | SILICON | DRAIN | SWITCHING | 100V | METAL-OXIDE SEMICONDUCTOR | 106A | 0.033Ohm | 74 mJ | 100V | 2 N-Channel (Dual) | 3168pF @ 25V | 31m Ω @ 5A, 10V | 2.1V @ 1mA | 27.3nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||
| ALD212900APAL | Advanced Linear Devices Inc. | $6.16 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | EPAD®, Zero Threshold™ | Through Hole | Through Hole | 0°C~70°C TJ | Tube | 1 (Unlimited) | 70°C | 0°C | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/advancedlineardevicesinc-ald212900pal-datasheets-3035.pdf | 8-DIP (0.300, 7.62mm) | 8 Weeks | 500mW | 8-PDIP | 30pF | 80mA | 10.6V | 500mW | 2 N-Channel (Dual) Matched Pair | 30pF @ 5V | 14Ohm | 10mV @ 20μA | 80mA | Logic Level Gate | 14 Ω | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SH8J65TB1 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | ROHS3 Compliant | 2009 | 8-SOIC (0.154, 3.90mm Width) | 20 Weeks | 8 | 2W | *J65 | 2W | 8-SOP | 1.2nF | 7A | 30V | 2W | 31mOhm | -30V | 2 P-Channel (Dual) | 1200pF @ 10V | 29mOhm @ 7A, 10V | 2.5V @ 1mA | 7A | 18nC @ 5V | Logic Level Gate | 29 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTM50H14FT3G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/microsemicorporation-aptm50h14ft3g-datasheets-6866.pdf | SP3 | 73.4mm | 11.5mm | 40.8mm | 25 | 16 Weeks | 32 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 208W | UPPER | UNSPECIFIED | 25 | 1 | Single | 208W | 4 | R-XUFM-X25 | 10 ns | 17ns | 41 ns | 50 ns | 26A | 30V | SILICON | ISOLATED | SWITCHING | 500V | 500V | METAL-OXIDE SEMICONDUCTOR | 4 N-Channel (H-Bridge) | 3259pF @ 25V | 168m Ω @ 13A, 10V | 5V @ 1mA | 72nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||
| BUK9K17-60EX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/nexperiausainc-buk9k1760ex-datasheets-6870.pdf | SOT-1205, 8-LFPAK56 | 6 | 12 Weeks | 8 | AEC-Q101; IEC-60134 | 53W | GULL WING | 8 | 2 | R-PDSO-G6 | 26A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 53W | 0.017Ohm | 64 mJ | 2 N-Channel (Dual) | 2223pF @ 25V | 15.6m Ω @ 10A, 10V | 2.1V @ 1mA | 16.5nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4214DDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4214ddyt1ge3-datasheets-6200.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.75mm | 4mm | Lead Free | 8 | 14 Weeks | 506.605978mg | Unknown | 19.5mOhm | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | 3.1W | GULL WING | 260 | 8 | Dual | 30 | 2W | 2 | 150°C | 7 ns | 45ns | 12 ns | 15 ns | 8.5A | 20V | SILICON | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 2.5V | 7.5A | 30V | 2 N-Channel (Dual) | 660pF @ 15V | 19.5m Ω @ 8A, 10V | 2.5V @ 250μA | 22nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||
| BUK7K6R2-40EX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/nexperiausainc-buk7k6r240ex-datasheets-6701.pdf | SOT-1205, 8-LFPAK56 | Lead Free | 6 | 12 Weeks | 8 | AEC-Q101; IEC-60134 | 68W | GULL WING | NOT SPECIFIED | 8 | 2 | Dual | NOT SPECIFIED | 2 | R-PDSO-G6 | 9.5 ns | 16ns | 17 ns | 21 ns | 40A | 20V | SILICON | DRAIN | SWITCHING | 40V | METAL-OXIDE SEMICONDUCTOR | 157 mJ | 40V | 2 N-Channel (Dual) | 2210pF @ 25V | 5.8m Ω @ 20A, 10V | 4V @ 1mA | 32.3nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||
| FDMA1027P | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdma1027p-datasheets-6557.pdf | 6-VDFN Exposed Pad | 2mm | 750μm | 2mm | 6 | 16 Weeks | 40mg | 6 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 800mW | NO LEAD | NOT SPECIFIED | Dual | NOT SPECIFIED | 1.4W | 2 | Other Transistors | Not Qualified | 9 ns | 11ns | 11 ns | 15 ns | 2.2A | 8V | SILICON | DRAIN | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | -20V | 2 P-Channel (Dual) | 435pF @ 10V | 120m Ω @ 3A, 4.5V | 1.3V @ 250μA | 3A | 6nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||
| ALD110900SAL | Advanced Linear Devices Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | EPAD®, Zero Threshold™ | Surface Mount | Surface Mount | 0°C~70°C TJ | Tube | 1 (Unlimited) | 70°C | 0°C | ROHS3 Compliant | 2005 | /files/advancedlineardevicesinc-ald110900apal-datasheets-3190.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 Weeks | 8 | 500mW | Dual | 500mW | 8-SOIC | 2.5pF | 10 ns | 12mA | 10.6V | 10.6V | 500mW | 500Ohm | 10V | 2 N-Channel (Dual) Matched Pair | 2.5pF @ 5V | 500Ohm @ 4V | 20mV @ 1μA | Standard | 500 Ω | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM6502CR RLG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | ROHS3 Compliant | 2017 | /files/taiwansemiconductorcorporation-tsm6502crrlg-datasheets-6720.pdf | 8-PowerTDFN | 18 Weeks | NOT SPECIFIED | NOT SPECIFIED | 60V | 40W | N and P-Channel | 1159pF @ 30V 930pF @ 30V | 34m Ω @ 5.4A, 10V, 68m Ω @ 4A, 10V | 2.5V @ 250μA | 24A Tc 18A Tc | 10.3nC @ 4.5V, 9.5nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJQ900E-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sqjq900et1ge3-datasheets-6735.pdf | PowerPAK® 8 x 8 Dual | Lead Free | 4 | 12 Weeks | unknown | YES | SINGLE | GULL WING | 2 | R-PSSO-G4 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | 40V | 40V | METAL-OXIDE SEMICONDUCTOR | 75W | 60A | 400A | 0.0039Ohm | 125 mJ | 2 N-Channel (Dual) | 5900pF @ 20V | 3.9m Ω @ 20A, 10V | 2.5V @ 250μA | 100A Tc | 120nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK7K5R1-30E,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/nexperiausainc-buk7k5r130e115-datasheets-6723.pdf | SOT-1205, 8-LFPAK56 | 6 | 12 Weeks | 8 | AVALANCHE RATED | Tin | not_compliant | e3 | AEC-Q101; IEC-60134 | YES | 68W | GULL WING | 8 | 2 | Dual | 2 | R-PDSO-G6 | 9.5 ns | 12.5ns | 13 ns | 19.5 ns | 40A | 20V | 30V | SILICON | DRAIN | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 68W | 0.0051Ohm | 30V | 2 N-Channel (Dual) | 2352pF @ 25V | 5.1m Ω @ 10A, 10V | 4V @ 1mA | 31.1nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||
| DMTH6010LPDQ-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/diodesincorporated-dmth6010lpdq13-datasheets-6741.pdf | 8-PowerTDFN | 6 | 23 Weeks | 8 | EAR99 | HIGH RELIABILITY | e3 | Matte Tin (Sn) | 2.8W | FLAT | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-F6 | 47.6A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 13.1A | 90A | 0.016Ohm | 20 mJ | 2 N-Channel (Dual) | 2615pF @ 30V | 11m Ω @ 20A, 10V | 3V @ 250μA | 13.1A Ta 47.6A Tc | 40.2nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||
| ZXMD63N03XTA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/diodesincorporated-zxmd63n03xta-datasheets-6758.pdf | 30V | 2.4A | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 3.1mm | 950μm | 3.1mm | Lead Free | 8 | 17 Weeks | 139.989945mg | No SVHC | 135mOhm | 8 | yes | EAR99 | LOW THRESHOLD | No | e3 | Matte Tin (Sn) | 1.04W | GULL WING | 260 | 8 | 40 | 1.25W | 2 | 2.5 ns | 4.1ns | 4.1 ns | 9.6 ns | 2.3A | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 30V | 2 N-Channel (Dual) | 290pF @ 25V | 135m Ω @ 1.7A, 10V | 1V @ 250μA (Min) | 8nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||
| ECH8695R-TL-W | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2013 | /files/onsemiconductor-ech8695rtlw-datasheets-6520.pdf | 8-SMD, Flat Lead | 2.9mm | 900μm | 2.3mm | Lead Free | 6 Weeks | 8 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | Tin | not_compliant | e6 | 1.4W | NOT SPECIFIED | 2 | Dual | NOT SPECIFIED | FET General Purpose Power | 300 ns | 320ns | 22.3 μs | 19.7 μs | 11A | 12.5V | 24V | METAL-OXIDE SEMICONDUCTOR | 24V | 2 N-Channel (Dual) Common Drain | 9.1m Ω @ 5A, 4.5V | 1.3V @ 1mA | 10nC @ 4.5V | Logic Level Gate, 2.5V Drive | ||||||||||||||||||||||||||||||||||||||||||||||||
| DMN4026SSD-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | /files/diodesincorporated-dmn4026ssd13-datasheets-6578.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.95mm | 1.5mm | 3.95mm | Lead Free | 18 Weeks | 73.992255mg | 8 | No | 1.8W | 2 | Dual | 1.8W | 2 | 8-SO | 1.06nF | 5.3 ns | 7.1ns | 4.8 ns | 15.1 ns | 7A | 20V | 40V | 1.3W | 20mOhm | 2 N-Channel (Dual) | 1060pF @ 20V | 24mOhm @ 6A, 10V | 3V @ 250μA | 7A | 19.1nC @ 10V | Logic Level Gate | 24 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||
| AO4807 | Alpha & Omega Semiconductor Inc. | $0.11 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductor-ao4807-datasheets-4477.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 2W | 2W | 2 | 6A | 20V | 30V | 2 P-Channel (Dual) | 760pF @ 15V | 35m Ω @ 6A, 10V | 2.4V @ 250μA | 16nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK7K52-60EX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/nexperiausainc-buk7k5260ex-datasheets-6624.pdf | SOT-1205, 8-LFPAK56 | 6 | 12 Weeks | AEC-Q101; IEC-60134 | 32W | GULL WING | NOT SPECIFIED | 8 | 2 | Dual | NOT SPECIFIED | 2 | R-PDSO-G6 | 4.3 ns | 5.1ns | 5.4 ns | 8.4 ns | 15.4A | 20V | SILICON | DRAIN | SWITCHING | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 71A | 0.045Ohm | 11.6 mJ | 2 N-Channel (Dual) | 535pF @ 25V | 45m Ω @ 5A, 10V | 4V @ 1mA | 9.2nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||
| UM6K33NTN | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/rohmsemiconductor-um6k33ntn-datasheets-5987.pdf | 6-TSSOP, SC-88, SOT-363 | Lead Free | 6 | 16 Weeks | 6 | yes | EAR99 | No | 120mW | GULL WING | 260 | 6 | 10 | 2 | FET General Purpose Power | 4 ns | 6ns | 55 ns | 15 ns | 200mA | 8V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 50V | 50V | METAL-OXIDE SEMICONDUCTOR | 0.2A | 2.4Ohm | 2 N-Channel (Dual) | 25pF @ 10V | 2.2 Ω @ 200mA, 4.5V | 1V @ 1mA | Logic Level Gate, 1.2V Drive | ||||||||||||||||||||||||||||||||||||||||||||||
| STL36DN6F7 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stl36dn6f7-datasheets-6664.pdf | 8-PowerVDFN | 1mm | 6 | 38 Weeks | ACTIVE (Last Updated: 8 months ago) | PowerFLATTM_8256945_DI_typeC | not_compliant | e3 | Matte Tin (Sn) | YES | 260 | STL36 | 2 | NOT SPECIFIED | 58W | 2 | 175°C | R-PDSO-F6 | 7.85 ns | 12.1 ns | 33A | 20V | SILICON | DRAIN | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 36A | 144A | 60V | 2 N-Channel (Dual) | 420pF @ 30V | 27m Ω @ 4.5A, 10V | 4V @ 250μA | 33A Tc | 8nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||
| ZXMN10A08DN8TA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/diodesincorporated-zxmn10a08dn8ta-datasheets-6694.pdf | 100V | 2.1A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 17 Weeks | 73.992255mg | No SVHC | 250mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.8W | GULL WING | 260 | 8 | 2 | 40 | 1.8W | 1 | FET General Purpose Power | 3.4 ns | 2.2ns | 2.2 ns | 8 ns | 2.1A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 1.25W | 9A | 100V | 2 N-Channel (Dual) | 405pF @ 50V | 250m Ω @ 3.2A, 10V | 2V @ 250μA (Min) | 1.6A | 7.7nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||
| FDMS9600S | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/onsemiconductor-fdms9600s-datasheets-6370.pdf | 8-PowerWDFN | 5mm | 825μm | 6mm | Lead Free | 8 | 16 Weeks | 9mg | 13MOhm | 8 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | Gold | No | e4 | 1W | Dual | 2.5W | 2 | FET General Purpose Power | 11ns | 32 ns | 54 ns | 16A | 20V | SILICON | DRAIN | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 375 pF | 30V | 2 N-Channel (Dual) | 1705pF @ 15V | 8.5m Ω @ 12A, 10V | 3V @ 250μA | 12A 16A | 13nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||
| SI5513CDC-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si5513cdct1ge3-datasheets-6399.pdf | 8-SMD, Flat Lead | 3.05mm | 1.1mm | 1.65mm | Lead Free | 8 | 14 Weeks | 84.99187mg | 8 | EAR99 | Tin | No | e3 | 3.1W | DUAL | C BEND | 260 | SI5513 | 8 | 30 | 1.7W | 2 | 19 ns | 40ns | 40 ns | 15 ns | 3.7A | 12V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | 20V | METAL-OXIDE SEMICONDUCTOR | 4A | 0.055Ohm | N and P-Channel | 285pF @ 10V | 55m Ω @ 4.3A, 4.5V | 1.5V @ 250μA | 4A 3.7A | 4.2nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||
| BSM080D12P2C008 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | 175°C TJ | Tray | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | Module | 8 | 25 Weeks | 10 | EAR99 | not_compliant | NO | 600W | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 2 | R-XUFM-X8 | 80A | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 1200V 1.2kV | 1200V | METAL-OXIDE SEMICONDUCTOR | 160A | 2 N-Channel (Dual) | 800pF @ 10V | 4V @ 13.2mA | 80A Tc | Silicon Carbide (SiC) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM500P02DCQ RFG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -50°C~150°C TJ | Digi-Reel® | 3 (168 Hours) | ROHS3 Compliant | 2015 | /files/taiwansemiconductorcorporation-tsm500p02dcqrfg-datasheets-6487.pdf | 6-VDFN Exposed Pad | 18 Weeks | 6-TDFN (2x2) | 20V | 620mW | 2 P-Channel (Dual) | 1230pF @ 10V | 50mOhm @ 3A, 4.5V | 800mV @ 250μA | 4.7A Tc | 9.6nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| QH8MA2TCR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/rohmsemiconductor-qh8ma2tcr-datasheets-6430.pdf | 8-SMD, Flat Lead | 8 | 20 Weeks | yes | 1.25W | DUAL | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-F8 | 3A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 4.5A | 12A | 0.0056Ohm | 1.5 mJ | N and P-Channel | 365pF @ 10V | 35m Ω @ 4.5A, 10V | 2.5V @ 1mA | 4.5A 3A | 8.4nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||
| DMG4511SK4-13 | Diodes Incorporated | $1.59 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmg4511sk413-datasheets-6541.pdf | TO-252-5, DPak (4 Leads + Tab), TO-252AD | 6.7mm | 2.39mm | 6.2mm | Lead Free | 15 Weeks | No SVHC | 3 | 1.54W | DMG4511 | 2 | 4.1W | 2 | TO-252-4L | 850pF | 5.4 ns | 2.8ns | 35.6 ns | 33.2 ns | 5A | 20V | 35V | 1.54W | 65mOhm | N and P-Channel, Common Drain | 850pF @ 25V | 35mOhm @ 8A, 10V | 3V @ 250μA | 5.3A 5A | 18.7nC @ 10V | Logic Level Gate | 35 mΩ |
