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ContactMOSFETs Transistors Arrays(4365)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | JESD-609 Code | Terminal Finish | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Power - Max | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature |
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| APTMC60TLM55CT3AG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Through Hole | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | RoHS Compliant | 2013 | /files/microsemicorporation-aptmc60tlm55ct3ag-datasheets-9519.pdf | SP3 | Lead Free | 22 Weeks | 3 | IN PRODUCTION (Last Updated: 3 weeks ago) | EAR99 | 250W | NOT SPECIFIED | NOT SPECIFIED | 1 | Other Transistors | 12 ns | 14ns | 18 ns | 23 ns | 55A | 1200V 1.2kV | METAL-OXIDE SEMICONDUCTOR | 4 N-Channel (Three Level Inverter) | 1900pF @ 1000V | 49m Ω @ 40A, 20V | 2.2V @ 2mA (Typ) | 48A Tc | 98nC @ 20V | Silicon Carbide (SiC) | |||||||||||||||||||||||||||
| APTMC60TL11CT3AG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Through Hole | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | RoHS Compliant | 2015 | https://pdf.utmel.com/r/datasheets/microsemicorporation-aptmc60tl11ct3ag-datasheets-9520.pdf | SP3 | Lead Free | 22 Weeks | 3 | IN PRODUCTION (Last Updated: 3 weeks ago) | EAR99 | 125W | 1 | Other Transistors | 12 ns | 14ns | 18 ns | 23 ns | 28A | 1200V 1.2kV | METAL-OXIDE SEMICONDUCTOR | 4 N-Channel (Three Level Inverter) | 950pF @ 1000V | 98m Ω @ 20A, 20V | 2.2V @ 1mA | 28A Tc | 49nC @ 20V | Silicon Carbide (SiC) | |||||||||||||||||||||||||||||
| APTM100TA35SCTPG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Chassis Mount, Through Hole | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | RoHS Compliant | 2013 | /files/microsemicorporation-aptm100ta35sctpg-datasheets-9521.pdf | Module | Lead Free | 22 Weeks | EAR99 | 390W | 3 | FET General Purpose Power | 18 ns | 12ns | 40 ns | 155 ns | 22A | 30V | 1000V 1kV | METAL-OXIDE SEMICONDUCTOR | 6 N-Channel (3-Phase Bridge) | 5200pF @ 25V | 420m Ω @ 11A, 10V | 5V @ 2.5mA | 186nC @ 10V | Standard | ||||||||||||||||||||||||||||||
| APTC60TAM21SCTPAG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Chassis Mount | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | RoHS Compliant | 1997 | /files/microsemicorporation-aptc60tam21sctpag-datasheets-9522.pdf | Module | Lead Free | 36 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | 625W | 3 | FET General Purpose Power | 116A | 600V | METAL-OXIDE SEMICONDUCTOR | 625W | 6 N-Channel (3-Phase Bridge) | 13000pF @ 100V | 21m Ω @ 88A, 10V | 3.6V @ 6mA | 580nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||
| APTM20AM05FG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2004 | /files/microsemicorporation-aptm20am05fg-datasheets-9480.pdf | SP6 | 7 | 36 Weeks | 6 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 1.136kW | UPPER | UNSPECIFIED | 7 | 2 | FET General Purpose Power | R-XUFM-X7 | 28 ns | 56ns | 99 ns | 81 ns | 317A | 30V | SILICON | ISOLATED | SWITCHING | 200V | METAL-OXIDE SEMICONDUCTOR | 1136W | 0.005Ohm | 2 N-Channel (Half Bridge) | 27400pF @ 25V | 5m Ω @ 158.5A, 10V | 5V @ 10mA | 448nC @ 10V | Standard | |||||||||||||||
| APTM20HM10FG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2012 | /files/microsemicorporation-aptm20hm10fg-datasheets-9482.pdf | SP6 | 12 | 36 Weeks | 6 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 694W | UPPER | UNSPECIFIED | 12 | 694W | 4 | R-XUFM-X12 | 28 ns | 56ns | 99 ns | 81 ns | 175A | 30V | SILICON | ISOLATED | SWITCHING | 200V | 200V | METAL-OXIDE SEMICONDUCTOR | 700A | 0.012Ohm | 2500 mJ | 4 N-Channel (H-Bridge) | 13700pF @ 25V | 12m Ω @ 87.5A, 10V | 5V @ 5mA | 224nC @ 10V | Standard | |||||||||||||
| APTM50AM24SCG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | /files/microsemicorporation-aptm50am24scg-datasheets-9491.pdf | SP6 | 7 | 36 Weeks | 6 | IN PRODUCTION (Last Updated: 1 month ago) | yes | EAR99 | No | e1 | TIN SILVER COPPER | 1.25kW | UPPER | UNSPECIFIED | 1.25kW | 2 | R-XUFM-X7 | 10 ns | 17ns | 41 ns | 50 ns | 150A | 30V | ISOLATED | SWITCHING | 500V | 500V | METAL-OXIDE SEMICONDUCTOR | 1250W | 1300 mJ | 2 N-Channel (Half Bridge) | 19600pF @ 25V | 28m Ω @ 75A, 10V | 5V @ 6mA | 434nC @ 10V | Silicon Carbide (SiC) | |||||||||||||||||
| VMM90-09P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTMC120AM55CT1AG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 1997 | /files/microsemicorporation-aptmc120am55ct1ag-datasheets-9454.pdf | SP1 | Lead Free | 12 | 22 Weeks | 1 | IN PRODUCTION (Last Updated: 1 month ago) | EAR99 | 250W | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 2 | FET General Purpose Power | 55A | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR | ISOLATED | SWITCHING | 1200V 1.2kV | METAL-OXIDE SEMICONDUCTOR | 0.049Ohm | 2 N-Channel (Half Bridge) | 1900pF @ 1000V | 49m Ω @ 40A, 20V | 2.2V @ 2mA (Typ) | 55A Tc | 98nC @ 20V | Silicon Carbide (SiC) | |||||||||||||||||||||||
| APTM100A13DG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 1999 | /files/microsemicorporation-aptm100a13dg-datasheets-9455.pdf | SP6 | 4 | 36 Weeks | 6 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 1.25kW | UPPER | UNSPECIFIED | 4 | 1.25kW | 2 | R-XUFM-X4 | 9 ns | 9ns | 24 ns | 50 ns | 65A | 30V | SILICON | ISOLATED | SWITCHING | 1000V 1kV | 1000V | METAL-OXIDE SEMICONDUCTOR | 1250W | 1300 mJ | 2 N-Channel (Half Bridge) | 15200pF @ 25V | 156m Ω @ 32.5A, 10V | 5V @ 6mA | 562nC @ 10V | Standard | ||||||||||||||
| MCB60P1200TLB-TUB | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 9-PowerSMD | 28 Weeks | 1200V | 4 N-Channel (Half Bridge) | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTM20TAM16FPG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2012 | /files/microsemicorporation-aptm20tam16fpg-datasheets-9461.pdf | SP6 | 21 | 36 Weeks | 6 | yes | EAR99 | AVALANCHE RATED | No | 390W | UPPER | UNSPECIFIED | 21 | 390W | 6 | FET General Purpose Power | R-XUFM-X21 | 32 ns | 64ns | 116 ns | 88 ns | 104A | 30V | SILICON | 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 200V | 200V | METAL-OXIDE SEMICONDUCTOR | 0.019Ohm | 3000 mJ | 6 N-Channel (3-Phase Bridge) | 7220pF @ 25V | 19m Ω @ 52A, 10V | 5V @ 2.5mA | 140nC @ 10V | Standard | ||||||||||||||
| APTM100TA35FPG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/microsemicorporation-aptm100ta35fpg-datasheets-9463.pdf | SP6 | 21 | 36 Weeks | 6 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 390W | UPPER | UNSPECIFIED | 21 | 390W | 6 | R-XUFM-X21 | 18 ns | 12ns | 40 ns | 155 ns | 22A | 30V | SILICON | 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 1000V 1kV | 1000V | METAL-OXIDE SEMICONDUCTOR | 88A | 0.42Ohm | 3000 mJ | 6 N-Channel (3-Phase Bridge) | 5200pF @ 25V | 420m Ω @ 11A, 10V | 5V @ 2.5mA | 186nC @ 10V | Standard | ||||||||||||
| APTM20HM08FG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/microsemicorporation-aptm20hm08fg-datasheets-9465.pdf | SP6 | 12 | 36 Weeks | 6 | yes | EAR99 | AVALANCHE RATED | e1 | TIN SILVER COPPER | 781W | UPPER | UNSPECIFIED | NOT SPECIFIED | 12 | NOT SPECIFIED | 781W | 4 | Not Qualified | R-XUFM-X12 | 32 ns | 64ns | 116 ns | 88 ns | 208A | 30V | SILICON | ISOLATED | SWITCHING | 200V | 200V | METAL-OXIDE SEMICONDUCTOR | 832A | 0.01Ohm | 3000 mJ | 4 N-Channel (H-Bridge) | 14400pF @ 25V | 10m Ω @ 104A, 10V | 5V @ 5mA | 280nC @ 10V | Standard | |||||||||||
| APTM10DUM02G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2012 | /files/microsemicorporation-aptm10dum02g-datasheets-9467.pdf | SP6 | 7 | 36 Weeks | 6 | IN PRODUCTION (Last Updated: 3 weeks ago) | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 1.25kW | UPPER | UNSPECIFIED | 7 | 1.25kW | 2 | R-XUFM-X7 | 160 ns | 240ns | 160 ns | 500 ns | 495A | 30V | SILICON | ISOLATED | SWITCHING | 100V | 100V | METAL-OXIDE SEMICONDUCTOR | 1250W | 1900A | 3000 mJ | 2 N-Channel (Dual) | 40000pF @ 25V | 2.5m Ω @ 200A, 10V | 4V @ 10mA | 1360nC @ 10V | Standard | ||||||||||||
| APTML602U12R020T3AG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2012 | /files/microsemicorporation-aptml602u12r020t3ag-datasheets-9469.pdf | SP3 | 32 | 36 Weeks | 3 | IN PRODUCTION (Last Updated: 1 month ago) | EAR99 | No | 568W | UPPER | UNSPECIFIED | 32 | 568W | 2 | 45A | 20V | SILICON | ISOLATED | SWITCHING | 600V | 600V | METAL-OXIDE SEMICONDUCTOR | 0.15Ohm | 2 N-Channel (Dual) | 7600pF @ 25V | 150m Ω @ 22.5A, 10V | 4V @ 2.5mA | Standard | ||||||||||||||||||||||||
| APTM50HM38FG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | /files/microsemicorporation-aptm50hm38fg-datasheets-9475.pdf | SP6 | 12 | 36 Weeks | 6 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 694W | UPPER | UNSPECIFIED | 12 | 694W | 4 | R-XUFM-X12 | 18 ns | 35ns | 77 ns | 87 ns | 90A | 30V | SILICON | ISOLATED | SWITCHING | 500V | 500V | METAL-OXIDE SEMICONDUCTOR | 2500 mJ | 4 N-Channel (H-Bridge) | 11200pF @ 25V | 45m Ω @ 45A, 10V | 5V @ 5mA | 246nC @ 10V | Standard | ||||||||||||||||
| APTM120A20DG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 1999 | /files/microsemicorporation-aptm120a20dg-datasheets-9477.pdf | SP6 | 7 | 36 Weeks | 6 | yes | EAR99 | AVALANCHE RATED | e1 | TIN SILVER COPPER | 1.25kW | UPPER | UNSPECIFIED | NOT SPECIFIED | 7 | NOT SPECIFIED | 1.25kW | 2 | Not Qualified | R-XUFM-X7 | 10 ns | 36 ns | 68 ns | 50A | 30V | SILICON | ISOLATED | SWITCHING | 1200V 1.2kV | METAL-OXIDE SEMICONDUCTOR | 1250W | 1300 mJ | 2 N-Channel (Half Bridge) | 15200pF @ 25V | 240m Ω @ 25A, 10V | 5V @ 6mA | 600nC @ 10V | Standard | ||||||||||||||
| MMPA60P1000TLA | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MMPA60P1000TLA | Chassis Mount | Y3-Li | 28 Weeks | 1000V | 2 N Channel (Phase Leg) | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTM10HM05FG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2012 | /files/microsemicorporation-aptm10hm05fg-datasheets-9478.pdf | SP6 | 12 | 36 Weeks | 12 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 780W | UPPER | UNSPECIFIED | 12 | 780W | 4 | 80 ns | 165ns | 135 ns | 280 ns | 278A | 30V | SILICON | ISOLATED | SWITCHING | 100V | 100V | METAL-OXIDE SEMICONDUCTOR | 1100A | 0.005Ohm | 3000 mJ | 4 N-Channel (H-Bridge) | 20000pF @ 25V | 5m Ω @ 125A, 10V | 4V @ 5mA | 700nC @ 10V | Standard | ||||||||||||||
| APTM20AM06SG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | /files/microsemicorporation-aptm20am06sg-datasheets-9451.pdf | SP6 | 7 | 36 Weeks | 6 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 1.25kW | UPPER | UNSPECIFIED | 7 | 1.25kW | 2 | R-XUFM-X7 | 28 ns | 56ns | 99 ns | 81 ns | 300A | 30V | SILICON | ISOLATED | SWITCHING | 200V | METAL-OXIDE SEMICONDUCTOR | 1250W | 1300 mJ | 2 N-Channel (Half Bridge) | 18500pF @ 25V | 7.2m Ω @ 150A, 10V | 5V @ 6mA | 325nC @ 10V | Standard | ||||||||||||||||
| APTM50AM38SCTG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 1997 | /files/microsemicorporation-aptm50am38sctg-datasheets-9453.pdf | SP4 | 10 | 36 Weeks | 4 | IN PRODUCTION (Last Updated: 1 month ago) | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 694W | UPPER | UNSPECIFIED | 10 | 694W | 2 | R-XUFM-X10 | 18 ns | 35ns | 77 ns | 87 ns | 90A | 30V | ISOLATED | SWITCHING | 500V | 500V | METAL-OXIDE SEMICONDUCTOR | 360A | 0.038Ohm | 2 N-Channel (Half Bridge) | 11200pF @ 25V | 45m Ω @ 45A, 10V | 5V @ 5mA | 246nC @ 10V | Silicon Carbide (SiC) | ||||||||||||||
| APTM10DHM05G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2012 | /files/microsemicorporation-aptm10dhm05g-datasheets-9391.pdf | SP6 | 8 | 36 Weeks | 6 | IN PRODUCTION (Last Updated: 3 weeks ago) | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 780W | UPPER | UNSPECIFIED | 8 | 780W | 2 | R-XUFM-X8 | 80 ns | 165ns | 135 ns | 280 ns | 278A | 30V | SILICON | ISOLATED | SWITCHING | 100V | 100V | METAL-OXIDE SEMICONDUCTOR | 1100A | 0.005Ohm | 3000 mJ | 2 N-Channel (Dual) Asymmetrical | 20000pF @ 25V | 5m Ω @ 125A, 10V | 4V @ 5mA | 700nC @ 10V | Standard | ||||||||||||
| APTC60AM24SCTG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 1997 | /files/microsemicorporation-aptc60am24sctg-datasheets-9393.pdf | SP4 | 9 | 36 Weeks | 4 | IN PRODUCTION (Last Updated: 2 weeks ago) | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE | No | 462W | UPPER | UNSPECIFIED | 10 | 2 | R-XUFM-X9 | 21 ns | 30ns | 45 ns | 100 ns | 95A | 20V | SILICON | ISOLATED | SWITCHING | 600V | 600V | METAL-OXIDE SEMICONDUCTOR | 1900 mJ | 2 N Channel (Phase Leg) | 14400pF @ 25V | 24m Ω @ 47.5A, 10V | 3.9V @ 5mA | 300nC @ 10V | Super Junction | |||||||||||||||||
| APTM20DUM05G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | /files/microsemicorporation-aptm20dum05g-datasheets-9394.pdf | SP6 | 7 | 36 Weeks | 6 | IN PRODUCTION (Last Updated: 1 month ago) | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 1.136kW | UPPER | UNSPECIFIED | 7 | 2 | R-XUFM-X7 | 28 ns | 56ns | 99 ns | 81 ns | 317A | 30V | SILICON | ISOLATED | SWITCHING | 200V | METAL-OXIDE SEMICONDUCTOR | 1136W | 2 N-Channel (Dual) | 27400pF @ 25V | 6m Ω @ 158.5A, 10V | 5V @ 10mA | 448nC @ 10V | Standard | |||||||||||||||||
| MCB40P1200LB-TRR | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MCB40P1200LB | Surface Mount | 9-PowerSMD | 28 Weeks | 1200V | 2 N-Channel (Dual) Common Source | 58A | Silicon Carbide (SiC) | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| MCB40P1200LB-TUB | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | Tube | /files/ixys-mcb40p1200lbtub-datasheets-9397.pdf | 9-SMD Power Module | 28 Weeks | 1200V 1.2kV | 2 N-Channel (Dual) Common Source | 58A | Silicon Carbide (SiC) | ||||||||||||||||||||||||||||||||||||||||||||||||||
| APTC60TAM35PG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/microsemicorporation-aptc60tam35pg-datasheets-9411.pdf | SP6 | 21 | 36 Weeks | 6 | yes | EAR99 | AVALANCHE RATED | e1 | TIN SILVER COPPER | 416W | UPPER | UNSPECIFIED | NOT SPECIFIED | 21 | NOT SPECIFIED | 416W | 6 | FET General Purpose Power | Not Qualified | R-XUFM-X21 | 21 ns | 30ns | 84 ns | 283 ns | 72A | 20V | SILICON | 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | METAL-OXIDE SEMICONDUCTOR | 200A | 0.035Ohm | 1800 mJ | 6 N-Channel (3-Phase Bridge) | 14000pF @ 25V | 35m Ω @ 72A, 10V | 3.9V @ 5.4mA | 518nC @ 10V | Standard | ||||||||||
| MCB60P1200TLB-TRR | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 9-PowerSMD | 28 Weeks | 1200V | 4 N-Channel (Half Bridge) | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTC60TDUM35PG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/microsemicorporation-aptc60tdum35pg-datasheets-9413.pdf | SP6 | 21 | 36 Weeks | 6 | IN PRODUCTION (Last Updated: 1 month ago) | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | 416W | UPPER | UNSPECIFIED | 21 | 416W | 6 | FET General Purpose Power | R-XUFM-X21 | 21 ns | 30ns | 84 ns | 283 ns | 72A | 20V | SILICON | 3 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | METAL-OXIDE SEMICONDUCTOR | 200A | 0.035Ohm | 1800 mJ | 6 N-Channel (3-Phase Bridge) | 14000pF @ 25V | 35m Ω @ 72A, 10V | 3.9V @ 5.4mA | 518nC @ 10V | Standard |
