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ContactMOSFETs Transistors Arrays(4365)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Power - Max | JEDEC-95 Code | Min Breakdown Voltage | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature |
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| IRF9952 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | 2001 | /files/infineontechnologies-irf9952tr-datasheets-9989.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | HIGH RELIABILITY | e0 | Tin/Lead (Sn/Pb) | YES | DUAL | GULL WING | 245 | 30 | 2 | Not Qualified | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 2W | MS-012AA | 3.5A | 16A | 0.1Ohm | 44 mJ | N and P-Channel | 190pF @ 15V | 100m Ω @ 2.2A, 10V | 1V @ 250μA | 3.5A 2.3A | 14nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||
| IRF9953TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | HIGH RELIABILITY | e3 | Matte Tin (Sn) | YES | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | Not Qualified | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 2W | 2.3A | 10A | 0.25Ohm | 57 mJ | 2 P-Channel (Dual) | 190pF @ 15V | 250m Ω @ 1A, 10V | 1V @ 250μA | 2.3A | 12nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||
| IRF7379TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | 1998 | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | Not Qualified | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 2.5W | MS-012AA | 5.8A | 46A | 0.045Ohm | N and P-Channel | 520pF @ 25V | 45m Ω @ 5.8A, 10V | 1V @ 250μA | 5.8A 4.3A | 25nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||
| IRF7750TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Non-RoHS Compliant | 2007 | 8-TSSOP (0.173, 4.40mm Width) | IRF7750 | 20V | 1W | 2 P-Channel (Dual) | 1700pF @ 15V | 30m Ω @ 4.7A, 4.5V | 1.2V @ 250μA | 4.7A | 39nC @ 5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NDS9936 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | /files/onsemiconductor-nds9936-datasheets-9815.pdf | 30V | 5A | 8-SOIC (0.154, 3.90mm Width) | Contains Lead | 8 | 900mW | 2W | 2 | 10ns | 10 ns | 25 ns | 5A | 20V | 30V | 2 N-Channel (Dual) | 525pF @ 15V | 50m Ω @ 5A, 10V | 3V @ 250μA | 35nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7901D1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FETKY™ | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | Non-RoHS Compliant | 2004 | 8-SOIC (0.154, 3.90mm Width) | 8-SO | 30V | 2W | 2 N-Channel (Dual) | 780pF @ 16V | 38mOhm @ 5A, 4.5V | 1V @ 250μA | 6.2A | 10.5nC @ 5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF9956TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | e3 | Matte Tin (Sn) | YES | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | Not Qualified | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 2W | MS-012AA | 3.5A | 16A | 0.1Ohm | 44 mJ | 2 N-Channel (Dual) | 190pF @ 15V | 100m Ω @ 2.2A, 10V | 1V @ 250μA | 3.5A | 14nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||
| IRF7331 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | 2007 | 8-SOIC (0.154, 3.90mm Width) | 8 | NOT SPECIFIED | YES | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 2W | MS-012AA | 2 N-Channel (Dual) | 1340pF @ 16V | 30m Ω @ 7A, 4.5V | 1.2V @ 250μA | 7A | 20nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7530TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | /files/infineontechnologies-irf7530tr-datasheets-9982.pdf | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 8 | EAR99 | HIGH RELIABILITY | e3 | Matte Tin (Sn) | YES | GULL WING | NOT SPECIFIED | IRF7530 | NOT SPECIFIED | 2 | Not Qualified | S-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 1.3W | 5.4A | 40A | 0.03Ohm | 33 mJ | 2 N-Channel (Dual) | 1310pF @ 15V | 30m Ω @ 5.4A, 4.5V | 1.2V @ 250μA | 5.4A | 26nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||
| ZXMD65N03N8TA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Digi-Reel® | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | /files/diodesincorporated-zxmd65n03n8ta-datasheets-0067.pdf | 30V | 5.7A | 8-SOIC (0.154, 3.90mm Width) | Contains Lead | 8 | EAR99 | unknown | 8541.21.00.95 | e3 | MATTE TIN | GULL WING | 260 | ZXMD65N03 | 8 | 40 | 2 | Not Qualified | R-PDSO-G8 | 6.5A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 0.029Ohm | 2 N-Channel (Dual) | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRF5850 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tube | 1 (Unlimited) | Non-RoHS Compliant | 2003 | /files/infineontechnologies-irf5850-datasheets-0069.pdf | SOT-23-6 Thin, TSOT-23-6 | 20V | 960mW | 2 P-Channel (Dual) | 320pF @ 15V | 135m Ω @ 2.2A, 4.5V | 1.2V @ 250μA | 2.2A | 5.4nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7324 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | /files/infineontechnologies-irf7324-datasheets-9908.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | HIGH RELIABILITY | NOT SPECIFIED | YES | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 2W | MS-012AA | 9A | 71A | 0.018Ohm | 2 P-Channel (Dual) | 2940pF @ 15V | 18m Ω @ 9A, 4.5V | 1V @ 250μA | 9A | 63nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||
| IRF7304TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | /files/infineontechnologies-irf7304-datasheets-2919.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | Matte Tin (Sn) | YES | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | Not Qualified | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 2W | 3.6A | 0.09Ohm | 2 P-Channel (Dual) | 610pF @ 15V | 90m Ω @ 2.2A, 4.5V | 700mV @ 250μA | 4.3A | 22nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||
| ZXMD63C03XTA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/diodesincorporated-zxmd63c03xta-datasheets-9919.pdf | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 3.1mm | 950μm | 3.1mm | Lead Free | 8 | 139.989945mg | No SVHC | 185mOhm | 8 | yes | EAR99 | LOW THRESHOLD | No | e3 | Matte Tin (Sn) | 1.04W | DUAL | GULL WING | 260 | 8 | 40 | 1.25W | 2 | Other Transistors | 2.6 ns | 4.8ns | 4.8 ns | 13.1 ns | -2A | 20V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 30V | N and P-Channel | 290pF @ 25V | 135m Ω @ 1.7A, 10V | 1V @ 250μA (Min) | 8nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||
| IRF7316TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | /files/infineontechnologies-irf7316tr-datasheets-9924.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | YES | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | Not Qualified | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 2W | MS-012AA | 4.9A | 30A | 0.058Ohm | 140 mJ | 2 P-Channel (Dual) | 710pF @ 25V | 58m Ω @ 4.9A, 10V | 1V @ 250μA | 4.9A | 34nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||
| PMGD370XN,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | 1997 | https://pdf.utmel.com/r/datasheets/nexperiausainc-pmgd370xn115-datasheets-9775.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | EAR99 | compliant | 8541.29.00.75 | e3 | Tin (Sn) | YES | GULL WING | 6 | 2 | R-PDSO-G6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 410mW | 0.74A | 0.44Ohm | 2 N-Channel (Dual) | 37pF @ 25V | 440m Ω @ 200mA, 4.5V | 1.5V @ 250μA | 740mA | 0.65nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||
| IRF7379 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | 1998 | 8-SOIC (0.154, 3.90mm Width) | 8 | AVALANCHE RATED, ULTRA LOW RESISTANCE | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-G8 | SILICON | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 2.5W | MS-012AA | 5.8A | 46A | 0.045Ohm | N and P-Channel | 520pF @ 25V | 45m Ω @ 5.8A, 10V | 1V @ 250μA | 5.8A 4.3A | 25nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||
| NDS9958 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | https://pdf.utmel.com/r/datasheets/onsemiconductor-nds9958-datasheets-9914.pdf | 8-SOIC (0.154, 3.90mm Width) | 8-SOIC | 20V | 900mW | N and P-Channel | 525pF @ 10V | 100mOhm @ 3.5A, 10V | 3V @ 250μA | 3.5A | 30nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N7002DW-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | 2000 | /files/diodesincorporated-2n7002dwq7f-datasheets-7748.pdf | 60V | 115mA | 6-TSSOP, SC-88, SOT-363 | 2.2mm | 1mm | 1.35mm | Contains Lead | 6 | 7.512624mg | No SVHC | 7.5Ohm | 6 | yes | EAR99 | HIGH RELIABILITY | e3 | Matte Tin (Sn) | 310mW | GULL WING | 260 | 6 | 2 | Dual | 40 | 200mW | 2 | FET General Purpose Power | Not Qualified | 7 ns | 11 ns | 230mA | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 60V | 0.115A | 5 pF | 2 N-Channel (Dual) | 50pF @ 25V | 7.5 Ω @ 50mA, 5V | 2V @ 250μA | Standard | ||||||||||||||||||||||||||||||
| APTMC120AM20CT1AG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | RoHS Compliant | 1997 | /files/microsemicorporation-aptmc120am20ct1ag-datasheets-9945.pdf | SP1 | Lead Free | 36 Weeks | 1 | IN PRODUCTION (Last Updated: 1 month ago) | EAR99 | 600W | 1 | FET General Purpose Power | 143A | 1200V 1.2kV | METAL-OXIDE SEMICONDUCTOR | 2 N Channel (Phase Leg) | 5960pF @ 1000V | 17m Ω @ 100A, 20V | 2.3V @ 2mA (Typ) | 143A Tc | 360nC @ 20V | Silicon Carbide (SiC) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ZXMD63N02XTA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/diodesincorporated-zxmd63n02xta-datasheets-9900.pdf | 20V | 2.4A | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 3.1mm | 950μm | 3.1mm | Lead Free | 8 | 139.989945mg | No SVHC | 130mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.04W | GULL WING | 260 | 8 | 40 | 1.25W | 2 | FET General Purpose Power | 3.4 ns | 8.1ns | 8.1 ns | 13.5 ns | 2.4A | 12V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 20V | 2 N-Channel (Dual) | 700pF @ 15V | 130m Ω @ 1.7A, 4.5V | 3V @ 250μA | 2.5A | 6nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||
| NDS8852H | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Non-RoHS Compliant | 1998 | /files/onsemiconductor-nds8852h-datasheets-9923.pdf | 8-SOIC (0.154, 3.90mm Width) | 8-SOIC | 30V | 1W | N and P-Channel | 300pF @ 15V | 80mOhm @ 3.4A, 10V | 2.8V @ 250μA | 4.3A 3.4A | 25nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7389PBF | Rochester Electronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | ROHS3 Compliant | /files/rochesterelectronicsllc-irf7389pbf-datasheets-9951.pdf | 8-SOIC (0.154, 3.90mm Width) | 8-SO | 30V | 2.5W | N and P-Channel | 650pF @ 25V | 29mOhm @ 5.8A, 10V | 1V @ 250μA | 33nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ZXMD63C02XTA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | ENHANCEMENT MODE | ROHS3 Compliant | /files/diodesincorporated-zxmd63c02xta-datasheets-9916.pdf | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 3.1mm | 950μm | 3.1mm | Lead Free | 8 | 139.989945mg | 270mOhm | 8 | yes | EAR99 | LOW THRESHOLD | No | e3 | Matte Tin (Sn) | 1.04W | DUAL | GULL WING | 260 | 8 | 2 | 40 | 1.25W | 2 | 3.4 ns | 9.6ns | 9.6 ns | 16.4 ns | 1.7A | 12V | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 20V | N and P-Channel | 350pF @ 15V | 130m Ω @ 1.7A, 4.5V | 700mV @ 250μA | 2.4A 1.7A | 6nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||
| IRF7506TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 8 | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | Matte Tin (Sn) | YES | GULL WING | NOT SPECIFIED | IRF7506 | NOT SPECIFIED | 2 | Not Qualified | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 1.25W | 1.7A | 9.6A | 0.27Ohm | 2 P-Channel (Dual) | 180pF @ 25V | 270m Ω @ 1.2A, 10V | 1V @ 250μA | 1.7A | 11nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||
| IRF7509TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | 1998 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 8 | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | IRF7509 | NOT SPECIFIED | 2 | Not Qualified | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 1.25W | 2.7A | 21A | 0.11Ohm | N and P-Channel | 210pF @ 25V | 110m Ω @ 1.4A, 10V | 1V @ 250μA | 2.7A 2A | 12nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||
| IRF7501TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | 1998 | /files/infineontechnologies-irf7501tr-datasheets-9971.pdf | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 8 | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | Matte Tin (Sn) | YES | GULL WING | NOT SPECIFIED | IRF7501 | NOT SPECIFIED | 2 | Not Qualified | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 1.25W | 2.4A | 14A | 0.135Ohm | 2 N-Channel (Dual) | 260pF @ 15V | 135m Ω @ 1.7A, 4.5V | 700mV @ 250μA | 2.4A | 8nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||
| IRF7389TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | HIGH RELIABILITY, AVALANCHE RATED | e3 | MATTE TIN | YES | DUAL | GULL WING | 260 | 30 | 2 | Not Qualified | R-PDSO-G8 | SILICON | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 2.5W | MS-012AA | 7.3A | 30A | 0.029Ohm | 82 mJ | N and P-Channel | 650pF @ 25V | 29m Ω @ 5.8A, 10V | 1V @ 250μA | 33nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||
| NDM3000 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | /files/onsemiconductor-ndm3000-datasheets-9804.pdf | 16-SOIC (0.154, 3.90mm Width) | 16-SOIC | 30V | 1.4W | 3 N and 3 P-Channel (3-Phase Bridge) | 360pF @ 10V | 90mOhm @ 3A, 10V | 3V @ 250μA | 3A | 25nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7102 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Tube | 1 (Unlimited) | Non-RoHS Compliant | 2000 | /files/infineontechnologies-irf7102-datasheets-9820.pdf | 8-SOIC (0.154, 3.90mm Width) | 8-SO | 50V | 2W | 2 N-Channel (Dual) | 120pF @ 25V | 300mOhm @ 1.5A, 10V | 3V @ 250μA | 2A | 6.6nC @ 10V | Standard |
