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ContactMOSFETs Transistors Arrays(4365)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Output Current | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Power - Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max |
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| NTJD4401NT1 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | 2009 | /files/onsemiconductor-ntjd4401nt1g-datasheets-3295.pdf | 20V | 630mA | 6-TSSOP, SC-88, SOT-363 | Contains Lead | 6 | 6 | OBSOLETE (Last Updated: 1 day ago) | no | EAR99 | not_compliant | 8541.21.00.95 | e0 | Tin/Lead (Sn80Pb20) | YES | 270mW | GULL WING | 240 | NTJD4401N | 6 | Dual | 30 | 270mW | 2 | FET General Purpose Power | Not Qualified | 227ns | 227 ns | 786 ns | 630mA | 12V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 0.375Ohm | 5 pF | 20V | 2 N-Channel (Dual) | 46pF @ 20V | 375m Ω @ 630mA, 4.5V | 1.5V @ 250μA | 3nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||
| IRF9910TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | 8541.29.00.95 | e3 | Matte Tin (Sn) | YES | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | FET General Purpose Power | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 2W | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 2W | MS-012AA | 10A | 83A | 0.0134Ohm | 33 mJ | 2 N-Channel (Dual) | 900pF @ 10V | 13.4m Ω @ 10A, 10V | 2.55V @ 250μA | 10A 12A | 11nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||
| NTQD6866R2 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntqd6866r2-datasheets-0357.pdf | 20V | 6.9A | 8-TSSOP (0.173, 4.40mm Width) | Contains Lead | 8 | 8 | EAR99 | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | not_compliant | e0 | Tin/Lead (Sn/Pb) | 940mW | GULL WING | 240 | 8 | 30 | 2W | 2 | FET General Purpose Power | Not Qualified | 45ns | 90 ns | 40 ns | 4.7A | 12V | SILICON | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 0.032Ohm | 175 pF | 20V | 2 N-Channel (Dual) | 1400pF @ 16V | 32m Ω @ 6.9A, 4.5V | 1.2V @ 250μA | 22nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||
| NTMC1300R2 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -65°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | /files/onsemiconductor-ntmc1300r2-datasheets-0305.pdf | 30V | 3A | 8-SOIC (0.154, 3.90mm Width) | Contains Lead | 8 | EAR99 | not_compliant | e0 | Tin/Lead (Sn/Pb) | 2W | DUAL | GULL WING | 8 | 2 | Other Transistors | Not Qualified | R-PDSO-G8 | 11ns | 1.8A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 2.2A | 8.5A | 0.09Ohm | 75 mJ | N and P-Channel | 300pF @ 20V | 90m Ω @ 3A, 10V | 2.2V @ 250μA | 2.2A 1.8A | 5nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||
| TPIC1502DW | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -40°C~150°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/texasinstruments-tpic1502dw-datasheets-0260.pdf | 24-SOIC (0.295, 7.50mm Width) | Lead Free | 24 | EAR99 | unknown | 2.86W | DUAL | GULL WING | TPIC1502 | 11 | FET General Purpose Power | Not Qualified | R-PDSO-G24 | 1.5A | 1.5A | SILICON | COMPLEX | AMPLIFIER | N-CHANNEL | 20V | METAL-OXIDE SEMICONDUCTOR | 2.86W | 0.005A | 0.3Ohm | 98pF @ 14V | 300m Ω @ 1.5A, 10V | 2.2V @ 1mA | 2.1nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||
| NTL4502NT1 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | 2006 | /files/onsemiconductor-ntl4502nt1-datasheets-0262.pdf | 24V | 15A | 16-PowerQFN | Contains Lead | 16 | 16 | EAR99 | not_compliant | e0 | Tin/Lead (Sn90Pb10) | 1.7W | QUAD | NO LEAD | 240 | 16 | 30 | 2.9W | 4 | FET General Purpose Powers | Not Qualified | 28ns | 6 ns | 22 ns | 11.4A | 20V | SILICON | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE | DRAIN | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 32A | 0.013Ohm | 80 mJ | 24V | 4 N-Channel (H-Bridge) | 1605pF @ 20V | 11m Ω @ 15A, 10V | 2V @ 250μA | 13nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||
| IRF6156 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | 2006 | 6-FlipFet™ | 6 | EAR99 | YES | BOTTOM | BALL | 260 | 40 | 2 | FET General Purpose Power | Not Qualified | R-PBGA-B6 | SILICON | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 2.5W | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 2.5W | 0.04Ohm | 2 N-Channel (Dual) | 950pF @ 15V | 40m Ω @ 6.5A, 4.5V | 1.2V @ 250μA | 6.5A | 18nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSO612CV | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | 1999 | /files/infineontechnologies-bso612cv-datasheets-0145.pdf | 3A | 8-SOIC (0.154, 3.90mm Width) | Contains Lead | 8 | 8 | EAR99 | AVALANCHE RATED | No | e0 | Tin/Lead (Sn/Pb) | 2W | DUAL | GULL WING | 235 | BSO612 | 8 | 2W | 2 | Other Transistors | 60ns | 95 ns | 145 ns | 2A | 20V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | N-CHANNEL AND P-CHANNEL | 60V | METAL-OXIDE SEMICONDUCTOR | 3A | 0.12Ohm | 47 mJ | -60V | N and P-Channel | 340pF @ 25V | 120m Ω @ 3A, 10V | 4V @ 20μA | 3A 2A | 15.5nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||
| IRF7754TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Non-RoHS Compliant | 2001 | 8-TSSOP (0.173, 4.40mm Width) | 8-TSSOP | 12V | 1W | 2 P-Channel (Dual) | 1984pF @ 6V | 25mOhm @ 5.4A, 4.5V | 900mV @ 250μA | 5.5A | 22nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPC8208(TE12L,Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Digi-Reel® | 1 (Unlimited) | RoHS Compliant | 2003 | /files/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 20V | 5A | 8-SOIC (0.173, 4.40mm Width) | Lead Free | 8 | 450mW | TPC*208 | 8-SOP (5.5x6.0) | 780pF | 5ns | 5A | 20V | 450mW | 2 N-Channel (Dual) | 780pF @ 10V | 50mOhm @ 2.5A, 4V | 1.2V @ 200μA | 5A | 9.5nC @ 5V | Logic Level Gate | 50 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTTD1P02R2 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | 2006 | /files/onsemiconductor-nttd1p02r2-datasheets-0277.pdf | -20V | -1.45A | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | Contains Lead | 8 | 8 | EAR99 | LOGIC LEVEL COMPATIBLE | not_compliant | e0 | Tin/Lead (Sn/Pb) | 500mW | GULL WING | 240 | 8 | 30 | 500mW | 2 | Other Transistors | Not Qualified | 30ns | 30 ns | 30 ns | 1.45A | 8V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 0.16Ohm | -20V | 2 P-Channel (Dual) | 265pF @ 16V | 160m Ω @ 1.45A, 4.5V | 1.4V @ 250μA | 10nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||
| IRF7752 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | 8-TSSOP (0.173, 4.40mm Width) | 8 | EAR99 | HIGH RELIABILITY | 8541.29.00.95 | e3 | MATTE TIN | YES | GULL WING | 260 | 30 | 2 | FET General Purpose Power | Not Qualified | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 1W | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 1W | MO-153AA | 4.6A | 0.03Ohm | 2 N-Channel (Dual) | 861pF @ 25V | 30m Ω @ 4.6A, 10V | 2V @ 250μA | 4.6A | 9nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||
| MMDF2P02HDR2 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | 2009 | /files/onsemiconductor-mmdf2p02hdr2-datasheets-0282.pdf | -20V | -2A | 8-SOIC (0.154, 3.90mm Width) | Contains Lead | 8 | 8 | OBSOLETE (Last Updated: 1 day ago) | no | EAR99 | LOGIC LEVEL COMPATIBLE | not_compliant | e0 | 2W | GULL WING | 240 | MMDF2P02HD | 8 | 30 | 2W | 2 | Other Transistors | Not Qualified | 66ns | 37 ns | 25 ns | 3.3A | 20V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 0.16Ohm | 232 pF | -20V | 2 P-Channel (Dual) | 588pF @ 16V | 160m Ω @ 2A, 10V | 2V @ 250μA | 20nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||
| NTMD6N03R2 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntmd6n03r2g-datasheets-6957.pdf | 30V | 6A | 8-SOIC (0.154, 3.90mm Width) | Contains Lead | 8 | EAR99 | not_compliant | e0 | Tin/Lead (Sn80Pb20) | 2W | GULL WING | 240 | NTMD6N03 | 8 | 30 | 2W | 2 | FET General Purpose Power | Not Qualified | R-PDSO-G8 | 22ns | 45 ns | 45 ns | 6A | 20V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 1.29W | 6A | 30A | 0.032Ohm | 325 mJ | 30V | 2 N-Channel (Dual) | 950pF @ 24V | 32m Ω @ 6A, 10V | 2.5V @ 250μA | 30nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||
| MMDF3N04HDR2 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | ENHANCEMENT MODE | Non-RoHS Compliant | 2006 | /files/onsemiconductor-mmdf3n04hdr2-datasheets-0287.pdf | 40V | 3A | 8-SOIC (0.154, 3.90mm Width) | Contains Lead | 8 | 8 | OBSOLETE (Last Updated: 2 weeks ago) | no | EAR99 | LOGIC LEVEL COMPATIBLE, AVALANCHE ENERGY RATED | not_compliant | e0 | Tin/Lead (Sn/Pb) | 1.39W | GULL WING | 240 | MMDF3N04HD | 8 | 30 | 2W | 2 | FET General Purpose Power | Not Qualified | 15ns | 19 ns | 15 ns | 3A | 20V | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 3.4A | 96 pF | 40V | 2 N-Channel (Dual) | 900pF @ 32V | 80m Ω @ 3.4A, 10V | 3V @ 250μA | 3.4A | 28nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||
| PMWD20XN,118 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/nxpusainc-pmwd20xn118-datasheets-9764.pdf | 8-TSSOP (0.173, 4.40mm Width) | 8 | EAR99 | unknown | YES | GULL WING | 8 | 2 | Not Qualified | R-PDSO-G8 | SILICON | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 4.2W | MO-153 | 10.4A | 0.022Ohm | 2 N-Channel (Dual) | 740pF @ 16V | 22m Ω @ 4.2A, 10V | 1.5V @ 1mA | 10.4A | 11.6nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7389 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | HIGH RELIABILITY, AVALANCHE RATED | e0 | TIN LEAD | YES | DUAL | GULL WING | 245 | 30 | 2 | Not Qualified | R-PDSO-G8 | SILICON | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 2.5W | MS-012AA | 7.3A | 30A | 0.029Ohm | 82 mJ | N and P-Channel | 650pF @ 25V | 29m Ω @ 5.8A, 10V | 1V @ 250μA | 33nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||
| IRF8915 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | 2007 | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | 8541.29.00.95 | e0 | TIN LEAD | YES | GULL WING | 245 | 30 | 2 | Not Qualified | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 2W | MS-012AA | 8.9A | 71A | 0.0183Ohm | 15 mJ | 2 N-Channel (Dual) | 540pF @ 10V | 18.3m Ω @ 8.9A, 10V | 2.5V @ 250μA | 8.9A | 7.4nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7325 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | Non-RoHS Compliant | 2007 | 8-SOIC (0.154, 3.90mm Width) | 12V | 2W | 2 P-Channel (Dual) | 2020pF @ 10V | 24m Ω @ 7.8A, 4.5V | 900mV @ 250μA | 7.8A | 33nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7757TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Non-RoHS Compliant | 2001 | /files/infineontechnologies-irf7757tr-datasheets-0246.pdf | 8-TSSOP (0.173, 4.40mm Width) | 8-TSSOP | 20V | 1.2W | 2 N-Channel (Dual) | 1340pF @ 15V | 35mOhm @ 4.8A, 4.5V | 1.2V @ 250μA | 4.8A | 23nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF5851 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Tube | 1 (Unlimited) | Non-RoHS Compliant | 2002 | /files/infineon-irf5851-datasheets-8404.pdf | 20V | SOT-23-6 Thin, TSOT-23-6 | Contains Lead | 6-TSOP | 20V | 960mW | N and P-Channel | 400pF @ 15V | 90mOhm @ 2.7A, 4.5V | 1.25V @ 250μA | 2.7A 2.2A | 6nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSS8402DW-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | 2005 | /files/diodesincorporated-bss8402dw7f-datasheets-2909.pdf | 115mA | 6-TSSOP, SC-88, SOT-363 | 2.2mm | 1mm | 1.35mm | Contains Lead | 6 | 6.010099mg | No SVHC | 6 | EAR99 | not_compliant | e0 | Tin/Lead (Sn85Pb15) | 200mW | DUAL | GULL WING | 235 | BSS8402DW | 6 | 2 | 10 | 200mW | 2 | Not Qualified | 10 ns | 18 ns | 130mA | 20V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | 60V 50V | METAL-OXIDE SEMICONDUCTOR | 0.115A | 5 pF | -50V | N and P-Channel | 50pF @ 25V | 7.5 Ω @ 50mA, 5V | 2.5V @ 250μA | 115mA 130mA | Logic Level Gate | ||||||||||||||||||||||||||||||||||||
| IRF7328TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | ULTRA LOW RESISTANCE | e3 | Matte Tin (Sn) | YES | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | Other Transistors | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 2W | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 2W | MS-012AA | 8A | 32A | 0.021Ohm | 2 P-Channel (Dual) | 2675pF @ 25V | 21m Ω @ 8A, 10V | 2.5V @ 250μA | 8A | 78nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7750 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | 2007 | -20V | -4.7A | 8-TSSOP (0.173, 4.40mm Width) | Contains Lead | 8 | EAR99 | HIGH RELIABILITY | 8541.29.00.95 | e3 | MATTE TIN | 1W | GULL WING | 260 | IRF7750 | 30 | 2 | Other Transistors | Not Qualified | R-PDSO-G8 | 4.7A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | MO-153AA | 0.03Ohm | -20V | 2 P-Channel (Dual) | 1700pF @ 15V | 30m Ω @ 4.7A, 4.5V | 1.2V @ 250μA | 39nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||
| IRF7755TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Non-RoHS Compliant | 2007 | 8-TSSOP (0.173, 4.40mm Width) | 8-TSSOP | 20V | 1W | 2 P-Channel (Dual) | 1090pF @ 15V | 51mOhm @ 3.7A, 4.5V | 1.2V @ 250μA | 3.9A | 17nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7329TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | e3 | Matte Tin (Sn) | YES | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | Not Qualified | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 12V | 12V | METAL-OXIDE SEMICONDUCTOR | 2W | 9.2A | 0.017Ohm | 2 P-Channel (Dual) | 3450pF @ 10V | 17m Ω @ 9.2A, 4.5V | 900mV @ 250μA | 9.2A | 57nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSO615CGHUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | ENHANCEMENT MODE | ROHS3 Compliant | 1999 | /files/infineontechnologies-bso615cghuma1-datasheets-0182.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 26 Weeks | 8 | yes | EAR99 | AVALANCHE RATED | Tin | No | e3 | Not Halogen Free | DUAL | GULL WING | BSO615 | 8 | 2W | 2 | 20V | 60V | SILICON | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 3.1A | 0.11Ohm | 47 mJ | N and P-Channel | 380pF @ 25V | 110m Ω @ 3.1A, 10V | 2V @ 20μA | 3.1A 2A | 22.5nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||
| IRF5810TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineon-irf5810tr-datasheets-8413.pdf | -20V | -2.9A | SOT-23-6 Thin, TSOT-23-6 | Contains Lead | 960mW | 6-TSOP | 650pF | 14ns | 2.9A | 20V | 960mW | 2 P-Channel (Dual) | 650pF @ 16V | 90mOhm @ 2.9A, 4.5V | 1.2V @ 250μA | 2.9A | 9.6nC @ 4.5V | Logic Level Gate | 90 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7752TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Non-RoHS Compliant | 8-TSSOP (0.173, 4.40mm Width) | 8-TSSOP | 30V | 1W | 2 N-Channel (Dual) | 861pF @ 25V | 30mOhm @ 4.6A, 10V | 2V @ 250μA | 4.6A | 9nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7103Q | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | 2009 | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | HIGH RELIABILITY | e3 | Matte Tin (Sn) | YES | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | FET General Purpose Power | Not Qualified | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 2.4W | 50V | 50V | METAL-OXIDE SEMICONDUCTOR | 2.4W | MS-012AA | 3A | 25A | 0.13Ohm | 22 mJ | 2 N-Channel (Dual) | 255pF @ 25V | 130m Ω @ 3A, 10V | 3V @ 250μA | 3A | 15nC @ 10V | Standard |
