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ContactMOSFETs Transistors Arrays(4365)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Weight | REACH SVHC | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Power - Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max |
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| IRF7103Q | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | 2009 | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | HIGH RELIABILITY | e3 | Matte Tin (Sn) | YES | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | FET General Purpose Power | Not Qualified | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 2.4W | 50V | 50V | METAL-OXIDE SEMICONDUCTOR | 2.4W | MS-012AA | 3A | 25A | 0.13Ohm | 22 mJ | 2 N-Channel (Dual) | 255pF @ 25V | 130m Ω @ 3A, 10V | 3V @ 250μA | 3A | 15nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||
| IRF7751TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Non-RoHS Compliant | 2007 | 8-TSSOP (0.173, 4.40mm Width) | 8-TSSOP | 30V | 1W | 2 P-Channel (Dual) | 1464pF @ 25V | 35mOhm @ 4.5A, 10V | 2.5V @ 250μA | 4.5A | 44nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSO207PNTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | 2001 | /files/infineontechnologies-bso207pntma1-datasheets-0228.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 8 | EAR99 | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | 2W | GULL WING | BSO207 | 2 | 5.7A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 2W | 0.045Ohm | 44 mJ | 2 P-Channel (Dual) | 1013pF @ 15V | 45m Ω @ 5.7A, 4.5V | 1.2V @ 40μA | 23.4nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||
| BSO204PNTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | 2008 | /files/infineontechnologies-bso204pntma1-datasheets-0232.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 8 | EAR99 | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | 2W | GULL WING | BSO204 | 2 | 7A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 2W | 7A | 0.03Ohm | 63 mJ | 2 P-Channel (Dual) | 1513pF @ 15V | 30m Ω @ 7A, 4.5V | 1.2V @ 60μA | 35.8nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||
| TPC8207(TE12L) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Digi-Reel® | 1 (Unlimited) | Non-RoHS Compliant | 2002 | /files/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 20V | 6A | 8-SOIC (0.173, 4.40mm Width) | Contains Lead | 8 | 450mW | TPC*207 | 6ns | 6A | 750mW | 2 N-Channel (Dual) | 2010pF @ 10V | 20m Ω @ 4.8A, 4V | 1.2V @ 200μA | 22nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSO4804 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2001 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bso4804-datasheets-0218.pdf | 30V | 8A | 8-SOIC (0.154, 3.90mm Width) | 8 | 8 | yes | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | e3 | Matte Tin (Sn) | 2W | GULL WING | 260 | BSO4804 | 8 | NOT SPECIFIED | 2W | 2 | FET General Purpose Power | Not Qualified | 27ns | 24 ns | 18 ns | 8A | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 8A | 90 mJ | 30V | 2 N-Channel (Dual) | 870pF @ 25V | 20m Ω @ 8A, 10V | 2V @ 30μA | 17nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||
| IRF7504TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 8 | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | Matte Tin (Sn) | YES | GULL WING | NOT SPECIFIED | IRF7504 | NOT SPECIFIED | 2 | Not Qualified | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 1.25W | 1.7A | 9.6A | 0.27Ohm | 2 P-Channel (Dual) | 240pF @ 15V | 270m Ω @ 1.2A, 4.5V | 700mV @ 250μA | 1.7A | 8.2nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||
| IRF7331TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | 2007 | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | e3 | Matte Tin (Sn) | YES | GULL WING | 260 | 30 | 2 | Not Qualified | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 2W | 7A | 0.03Ohm | 2 N-Channel (Dual) | 1340pF @ 16V | 30m Ω @ 7A, 4.5V | 1.2V @ 250μA | 7A | 20nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||
| IRF7755 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | 2007 | -20V | -3.7A | 8-TSSOP (0.173, 4.40mm Width) | 3mm | 1mm | 4.4mm | Contains Lead | 8 | 8 | EAR99 | HIGH RELIABILITY | e3 | MATTE TIN | 1W | GULL WING | 260 | 30 | 2 | Other Transistors | Not Qualified | 9 ns | 13ns | 61 ns | 89 ns | 3.9A | 20V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 1W | MO-153AA | 0.051Ohm | -20V | 2 P-Channel (Dual) | 1090pF @ 15V | 51m Ω @ 3.7A, 4.5V | 1.2V @ 250μA | 17nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||
| IRF7751 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | 2007 | -30V | -4.5A | 8-TSSOP (0.173, 4.40mm Width) | Contains Lead | 8 | EAR99 | HIGH RELIABILITY | e3 | MATTE TIN | 1W | GULL WING | 260 | 30 | 2 | Other Transistors | Not Qualified | R-PDSO-G8 | 4.5A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | MO-153AA | 0.035Ohm | -30V | 2 P-Channel (Dual) | 1464pF @ 25V | 35m Ω @ 4.5A, 10V | 2.5V @ 250μA | 44nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||
| IRF5810 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Tube | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | SOT-23-6 Thin, TSOT-23-6 | 6 | EAR99 | e0 | TIN LEAD | YES | GULL WING | NOT SPECIFIED | 150°C | NOT SPECIFIED | 2 | Other Transistors | Not Qualified | R-PDSO-G6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 0.96W | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 960mW | MO-193AA | 2.9A | 0.09Ohm | 2 P-Channel (Dual) | 650pF @ 16V | 90m Ω @ 2.9A, 4.5V | 1.2V @ 250μA | 2.9A | 9.6nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||
| BSS138DW-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | 2005 | /files/diodesincorporated-bss138dw7f-datasheets-3758.pdf | 50V | 200mA | 6-TSSOP, SC-88, SOT-363 | 2.2mm | 1mm | 1.35mm | Contains Lead | 6 | 6.010099mg | No SVHC | 6 | no | EAR99 | HIGH RELIABILITY | e0 | Tin/Lead (Sn/Pb) | 200mW | GULL WING | 235 | 6 | 2 | Dual | 10 | 200mW | 2 | FET General Purpose Power | Not Qualified | 20 ns | 20 ns | 200mA | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 8 pF | 50V | 2 N-Channel (Dual) | 50pF @ 10V | 3.5 Ω @ 220mA, 10V | 1.5V @ 250μA | Logic Level Gate | ||||||||||||||||||||||||||||||||
| STC5NF20V | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stc5nf20v-datasheets-9609.pdf | 20V | 5A | 8-TSSOP (0.173, 4.40mm Width) | 8 | 8 | EAR99 | LOW THRESHOLD | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 1.5W | GULL WING | 260 | STC5NF | 8 | 10 | 1.5W | 2 | FET General Purpose Power | Not Qualified | 33ns | 33 ns | 27 ns | 5A | 12V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 5A | 0.045Ohm | 20V | 2 N-Channel (Dual) | 460pF @ 15V | 40m Ω @ 2.5A, 4.5V | 600mV @ 250μA | 11.5nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||
| IRF5851TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | Non-RoHS Compliant | 2002 | 20V | SOT-23-6 Thin, TSOT-23-6 | Contains Lead | 960mW | 960mW | 6-TSOP | 400pF | 14ns | 2.2A | 20V | 960mW | N and P-Channel | 400pF @ 15V | 90mOhm @ 2.7A, 4.5V | 1.25V @ 250μA | 2.7A 2.2A | 6nC @ 4.5V | Logic Level Gate | 90 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF5852TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | Non-RoHS Compliant | 2003 | /files/infineon-irf5852tr-datasheets-8394.pdf | 20V | 2.7A | SOT-23-6 Thin, TSOT-23-6 | Contains Lead | 6 | 960mW | 6-TSOP | 400pF | 1.2ns | 2.7A | 20V | 960mW | 20V | 2 N-Channel (Dual) | 400pF @ 15V | 90mOhm @ 2.7A, 4.5V | 1.25V @ 250μA | 2.7A | 6nC @ 4.5V | Logic Level Gate | 90 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7325TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Non-RoHS Compliant | 8-SOIC (0.154, 3.90mm Width) | 8-SO | 12V | 2W | 2 P-Channel (Dual) | 2020pF @ 10V | 24mOhm @ 7.8A, 4.5V | 900mV @ 250μA | 7.8A | 33nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF5852 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Tube | 1 (Unlimited) | Non-RoHS Compliant | 2003 | /files/infineon-irf5852-datasheets-8396.pdf | 20V | 2.7A | SOT-23-6 Thin, TSOT-23-6 | Contains Lead | 6-TSOP | 1.2ns | 2.7A | 20V | 960mW | 2 N-Channel (Dual) | 400pF @ 15V | 90mOhm @ 2.7A, 4.5V | 1.25V @ 250μA | 2.7A | 6nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI9955DY | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | /files/onsemiconductor-si9955dy-datasheets-0125.pdf | 8-SOIC (0.154, 3.90mm Width) | SI9955D | 8-SOIC | 50V | 900mW | 2 N-Channel (Dual) | 345pF @ 15V | 130mOhm @ 3A, 10V | 1V @ 250μA | 3A | 30nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7754 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | Non-RoHS Compliant | 2001 | 8-TSSOP (0.173, 4.40mm Width) | 8-TSSOP | 12V | 1W | 2 P-Channel (Dual) | 1984pF @ 6V | 25mOhm @ 5.4A, 4.5V | 900mV @ 250μA | 5.5A | 22nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ZXMD65P02N8TA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ENHANCEMENT MODE | RoHS Compliant | /files/diodesincorporated-zxmd65p02n8ta-datasheets-0048.pdf | -20V | -4.4A | 8-SOIC (0.154, 3.90mm Width) | Contains Lead | 8 | 73.992255mg | 8 | EAR99 | LOW THRESHOLD | No | e3 | MATTE TIN | 1.75W | GULL WING | 260 | ZXMD65P02 | 8 | 2 | 40 | 2W | 2 | 6.6 ns | 29.9ns | 29.9 ns | 57.9 ns | 5.1A | 12V | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 4A | 0.05Ohm | 2 P-Channel (Dual) | 960pF @ 15V | 50m Ω @ 2.9A, 4.5V | 700mV @ 250μA (Min) | 4A | 20nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||
| IRF7756 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | -12V | -4.3A | 8-TSSOP (0.173, 4.40mm Width) | Contains Lead | 8 | EAR99 | 1W | Other Transistors | 4.3A | 12V | METAL-OXIDE SEMICONDUCTOR | -12V | 2 P-Channel (Dual) | 1400pF @ 10V | 40m Ω @ 4.3A, 4.5V | 900mV @ 250μA | 18nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSO215C | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | 1999 | /files/infineontechnologies-bso215c-datasheets-0137.pdf | 3.1A | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | LOGIC LEVAL | unknown | 8541.29.00.95 | e0 | Tin/Lead (Sn/Pb) | 2W | DUAL | GULL WING | NOT SPECIFIED | 8 | NOT SPECIFIED | 2 | Other Transistors | Not Qualified | R-PDSO-G8 | 3.7A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | N-CHANNEL AND P-CHANNEL | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 14.8A | 0.1Ohm | 26 mJ | N and P-Channel | 246pF @ 25V | 100m Ω @ 3.7A, 10V | 2V @ 10μA | 11.5nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||
| IRF7901D1TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FETKY™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Non-RoHS Compliant | 2004 | 8-SOIC (0.154, 3.90mm Width) | 8-SO | 30V | 2W | 2 N-Channel (Dual) | 780pF @ 16V | 38mOhm @ 5A, 4.5V | 1V @ 250μA | 6.2A | 10.5nC @ 5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSD223P | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2002 | /files/infineontechnologies-bsd223p-datasheets-0141.pdf | 6-VSSOP, SC-88, SOT-363 | 6 | yes | EAR99 | AVALANCHE RATED | compliant | 8541.21.00.95 | YES | GULL WING | NOT SPECIFIED | BSD223 | 6 | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | R-PDSO-G6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 0.25W | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 250mW | 0.39A | 22 pF | 2 P-Channel (Dual) | 56pF @ 15V | 1.2 Ω @ 390mA, 4.5V | 1.2V @ 1.5μA | 390mA | 0.62nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||
| IRF9953 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | HIGH RELIABILITY | e0 | TIN LEAD | YES | GULL WING | 245 | 30 | 2 | Not Qualified | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 2W | 2.3A | 10A | 0.25Ohm | 57 mJ | 2 P-Channel (Dual) | 190pF @ 15V | 250m Ω @ 1A, 10V | 1V @ 250μA | 2.3A | 12nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||
| IRF7507TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | 1998 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 8 | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | IRF7507 | NOT SPECIFIED | 2 | Not Qualified | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 1.25W | 2.4A | 19A | 0.14Ohm | N and P-Channel | 260pF @ 15V | 140m Ω @ 1.7A, 4.5V | 700mV @ 250μA | 2.4A 1.7A | 8nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||
| IRF9952 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | 2001 | /files/infineontechnologies-irf9952tr-datasheets-9989.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | HIGH RELIABILITY | e0 | Tin/Lead (Sn/Pb) | YES | DUAL | GULL WING | 245 | 30 | 2 | Not Qualified | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 2W | MS-012AA | 3.5A | 16A | 0.1Ohm | 44 mJ | N and P-Channel | 190pF @ 15V | 100m Ω @ 2.2A, 10V | 1V @ 250μA | 3.5A 2.3A | 14nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||
| IRF9953TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | HIGH RELIABILITY | e3 | Matte Tin (Sn) | YES | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | Not Qualified | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 2W | 2.3A | 10A | 0.25Ohm | 57 mJ | 2 P-Channel (Dual) | 190pF @ 15V | 250m Ω @ 1A, 10V | 1V @ 250μA | 2.3A | 12nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||
| IRF7379TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | 1998 | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | Not Qualified | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 2.5W | MS-012AA | 5.8A | 46A | 0.045Ohm | N and P-Channel | 520pF @ 25V | 45m Ω @ 5.8A, 10V | 1V @ 250μA | 5.8A 4.3A | 25nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||
| IRF7750TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Non-RoHS Compliant | 2007 | 8-TSSOP (0.173, 4.40mm Width) | IRF7750 | 20V | 1W | 2 P-Channel (Dual) | 1700pF @ 15V | 30m Ω @ 4.7A, 4.5V | 1.2V @ 250μA | 4.7A | 39nC @ 5V | Logic Level Gate |
