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ContactMOSFETs Transistors Arrays(4365)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Row Spacing | Threshold Voltage | Power - Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max |
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| PMWD30UN,518 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/nxpusainc-pmwd30un518-datasheets-0827.pdf | 8-TSSOP (0.173, 4.40mm Width) | 8 | EAR99 | unknown | YES | GULL WING | 8 | 2 | Not Qualified | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 2.3W | MO-153AB | 5A | 0.04Ohm | 2 N-Channel (Dual) | 1478pF @ 10V | 33m Ω @ 3.5A, 4.5V | 700mV @ 1mA | 5A | 28nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF9952PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf9952trpbf-datasheets-4868.pdf | 3.5A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 4.05mm | Lead Free | 8 | No SVHC | 100mOhm | 8 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | No | 2W | DUAL | GULL WING | IRF9952PBF | 2W | 2 | Other Transistors | 14ns | 6.9 ns | 20 ns | 3.5A | 20V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 6.3 mm | 1V | 16A | 44 mJ | 30V | N and P-Channel | 190pF @ 15V | 1 V | 100m Ω @ 2.2A, 10V | 1V @ 250μA | 3.5A 2.3A | 14nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||
| IRF7341PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf7341trpbf-datasheets-5055.pdf | 8-SOIC (0.154, 3.90mm Width) | 22 Weeks | EAR99 | IRF7341PBF | 55V | 2W | 2 N-Channel (Dual) | 740pF @ 25V | 50m Ω @ 4.7A, 10V | 1V @ 250μA | 4.7A | 36nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTQD6866R2G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/onsemiconductor-ntqd6866r2-datasheets-0357.pdf | 20V | 6.9A | 8-TSSOP (0.173, 4.40mm Width) | Lead Free | 8 | 8 | LAST SHIPMENTS (Last Updated: 1 week ago) | yes | EAR99 | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | e3 | Tin (Sn) | 940mW | GULL WING | 260 | 8 | 40 | 2W | 2 | FET General Purpose Power | Not Qualified | 45ns | 90 ns | 40 ns | 4.7A | 12V | SILICON | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 0.032Ohm | 175 pF | 20V | 2 N-Channel (Dual) | 1400pF @ 16V | 32m Ω @ 6.9A, 4.5V | 1.2V @ 250μA | 22nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||
| IRF7316PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf7316trpbf-datasheets-5874.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | e3 | Matte Tin (Sn) | YES | GULL WING | NOT SPECIFIED | IRF7316PBF | NOT SPECIFIED | 2 | Other Transistors | Not Qualified | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 2W | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 2W | MS-012AA | 4.9A | 30A | 0.058Ohm | 140 mJ | 2 P-Channel (Dual) | 710pF @ 25V | 58m Ω @ 4.9A, 10V | 1V @ 250μA | 4.9A | 34nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||
| IRF7307PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/infineontechnologies-irf7307trpbf-datasheets-5044.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 12 Weeks | EAR99 | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | 260 | IRF7307PBF | 30 | 2 | Other Transistors | Not Qualified | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | 1.4W | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 2W | MS-012AA | 5.2A | 21A | 0.05Ohm | N and P-Channel | 660pF @ 15V | 50m Ω @ 2.6A, 4.5V | 700mV @ 250μA | 5.2A 4.3A | 20nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||
| MMDF2N02ER2G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/onsemiconductor-mmdf2n02er2-datasheets-0328.pdf | 25V | 2A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 8 | OBSOLETE (Last Updated: 1 week ago) | yes | EAR99 | LOGIC LEVEL COMPATIBLE | unknown | e3 | Tin (Sn) | 2W | GULL WING | 260 | 8 | 40 | 2W | 2 | FET General Purpose Power | Not Qualified | 17ns | 18 ns | 27 ns | 3.6A | 20V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 0.1Ohm | 245 mJ | 25V | 2 N-Channel (Dual) | 532pF @ 16V | 100m Ω @ 2.2A, 10V | 3V @ 250μA | 30nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||
| IRF7389PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf7389trpbf-datasheets-2611.pdf | 8-SOIC (0.154, 3.90mm Width) | EAR99 | IRF7389PBF | 30V | 2.5W | N and P-Channel | 650pF @ 25V | 29m Ω @ 5.8A, 10V | 1V @ 250μA | 33nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MMDF2P02HDR2G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/onsemiconductor-mmdf2p02hdr2-datasheets-0282.pdf | -20V | -2A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 8 | OBSOLETE (Last Updated: 1 week ago) | yes | EAR99 | LOGIC LEVEL COMPATIBLE | unknown | e3 | Tin (Sn) | 2W | GULL WING | 260 | MMDF2P02HD | 8 | 40 | 2W | 2 | Other Transistors | Not Qualified | 66ns | 37 ns | 25 ns | 3.3A | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 0.16Ohm | -20V | 2 P-Channel (Dual) | 588pF @ 16V | 160m Ω @ 2A, 10V | 2V @ 250μA | 20nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||
| NTMD2P01R2G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/onsemiconductor-ntmd2p01r2-datasheets-0315.pdf | -16V | -2.3A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 8 | OBSOLETE (Last Updated: 1 week ago) | yes | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | Tin (Sn) | 710mW | GULL WING | 260 | 8 | 40 | 2W | 2 | Other Transistors | Not Qualified | 35ns | 29 ns | 33 ns | -3.85A | 10V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 16V | METAL-OXIDE SEMICONDUCTOR | 9A | 0.1Ohm | 350 mJ | -16V | 2 P-Channel (Dual) | 750pF @ 16V | 100m Ω @ 2.4A, 4.5V | 1.5V @ 250μA | 2.3A | 18nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||
| PMWD15UN,518 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2005 | 8-TSSOP (0.173, 4.40mm Width) | 20V | 4.2W | 2 N-Channel (Dual) | 1450pF @ 16V | 18.5m Ω @ 5A, 4.5V | 700mV @ 1mA | 11.6A | 22.2nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTQD6968NR2G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/onsemiconductor-ntqd6968nr2-datasheets-0491.pdf | 20V | 7A | 8-TSSOP (0.173, 4.40mm Width) | Lead Free | 8 | 8 | LAST SHIPMENTS (Last Updated: 1 week ago) | yes | EAR99 | LOGIC LEVEL COMPATIBLE | unknown | e3 | Tin (Sn) | 1.39W | GULL WING | 260 | 8 | 40 | 1.81W | 2 | FET General Purpose Power | Not Qualified | 25ns | 25 ns | 60 ns | 6.2A | 12V | SILICON | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 7A | 0.03Ohm | 20V | 2 N-Channel (Dual) | 630pF @ 16V | 22m Ω @ 7A, 4.5V | 1.2V @ 250μA | 17nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||
| IRF9956PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/infineontechnologies-irf9956pbf-datasheets-0803.pdf | 30V | 3.5A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4.05mm | Lead Free | 8 | No SVHC | 100mOhm | 8 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | No | 2W | GULL WING | IRF9956PBF | Dual | 2W | 2 | FET General Purpose Power | 6.2 ns | 8.8ns | 3 ns | 13 ns | 3.5A | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 1V | 16A | 44 mJ | 30V | 2 N-Channel (Dual) | 190pF @ 15V | 1 V | 100m Ω @ 2.2A, 10V | 1V @ 250μA | 14nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||
| IRF8910PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf8910trpbf-datasheets-2538.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | YES | GULL WING | NOT SPECIFIED | IRF8910PBF | NOT SPECIFIED | 2 | Not Qualified | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 2W | MS-012AA | 10A | 82A | 0.0134Ohm | 19 mJ | 2 N-Channel (Dual) | 960pF @ 10V | 13.4m Ω @ 10A, 10V | 2.55V @ 250μA | 10A | 11nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||
| TPC8207(TE12L,Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | 2002 | /files/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 20V | 6A | 8-SOIC (0.173, 4.40mm Width) | Lead Free | 8 | 750mW | TPC*207 | 1.5W | 2 | 8-SOP (5.5x6.0) | 2.01nF | 6A | 12V | 20V | 450mW | 2 N-Channel (Dual) | 2010pF @ 10V | 20mOhm @ 4.8A, 4V | 1.2V @ 200μA | 6A | 22nC @ 5V | Logic Level Gate | 20 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF9910PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf9910trpbf-datasheets-2746.pdf | 20V | 10A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | No SVHC | 8 | EAR99 | No | 2W | GULL WING | IRF9910PBF | Dual | 2W | 2 | 14ns | 7.5 ns | 15 ns | 12A | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 2.55V | 0.0093Ohm | 20V | 2 N-Channel (Dual) | 900pF @ 10V | 2.55 V | 13.4m Ω @ 10A, 10V | 2.55V @ 250μA | 10A 12A | 11nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||
| IRF7325TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | 2004 | /files/infineontechnologies-irf7325trpbf-datasheets-0573.pdf | -12V | -7.8A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 2W | IRF7325PBF | Dual | 2W | 2 | 8-SO | 2.02nF | 7.8A | 8V | 12V | 2W | -12V | 2 P-Channel (Dual) | 2020pF @ 10V | 24mOhm @ 7.8A, 4.5V | 900mV @ 250μA | 7.8A | 33nC @ 4.5V | Logic Level Gate | 24 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7314PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/infineontechnologies-irf7314trpbf-datasheets-6218.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 39 Weeks | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | e3 | Matte Tin (Sn) | YES | GULL WING | NOT SPECIFIED | IRF7314PBF | NOT SPECIFIED | 2 | Other Transistors | Not Qualified | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 1.4W | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 2W | MS-012AA | 5.3A | 21A | 0.058Ohm | 150 mJ | 2 P-Channel (Dual) | 780pF @ 15V | 58m Ω @ 2.9A, 4.5V | 700mV @ 250μA | 5.3A | 29nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||
| IRF7303PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/infineontechnologies-irf7303trpbf-datasheets-2398.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 22 Weeks | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | Matte Tin (Sn) | YES | GULL WING | 260 | IRF7303PBF | 30 | 2 | FET General Purpose Power | Not Qualified | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 1.4W | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 2W | MS-012AA | 4.9A | 20A | 0.05Ohm | 2 N-Channel (Dual) | 520pF @ 25V | 50m Ω @ 2.4A, 10V | 1V @ 250μA | 4.9A | 25nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||
| IRF7329PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | SMD/SMT | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf7329trpbf-datasheets-5288.pdf | -12V | -9.2A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Lead Free | 8 | 13 Weeks | No SVHC | 17MOhm | 8 | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | 2W | GULL WING | IRF7329PBF | Dual | 2W | 2 | Other Transistors | 10 ns | 8.6ns | 260 ns | 340 ns | -9.2A | 8V | -12V | SILICON | SWITCHING | 12V | METAL-OXIDE SEMICONDUCTOR | 6.3 mm | -900mV | -12V | 2 P-Channel (Dual) | 3450pF @ 10V | -900 mV | 17m Ω @ 9.2A, 4.5V | 900mV @ 250μA | 9.2A | 57nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||
| FDC6020C | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | /files/onsemiconductor-fdc6020c-datasheets-0623.pdf | 5.9A | 6-SSOT Flat-lead, SuperSOT™-6 FLMP | Lead Free | No SVHC | 6 | 1.2W | 1.6W | 2 | 8ns | 8 ns | 26 ns | 5.9A | 12V | 1V | 20V | N and P-Channel | 677pF @ 10V | 27m Ω @ 5.9A, 4.5V | 1.5V @ 250μA | 5.9A 4.2A | 8nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7901D1TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FETKY™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 2004 | /files/infineontechnologies-irf7901d1trpbf-datasheets-0555.pdf | 8-SOIC (0.154, 3.90mm Width) | IRF7901D1PBF | 30V | 2W | 2 N-Channel (Dual) | 780pF @ 16V | 38m Ω @ 5A, 4.5V | 1V @ 250μA | 6.2A | 10.5nC @ 5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7311PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf7311trpbf-datasheets-5406.pdf | 8-SOIC (0.154, 3.90mm Width) | EAR99 | IRF7311PBF | 20V | 2W | 2 N-Channel (Dual) | 900pF @ 15V | 29m Ω @ 6A, 4.5V | 700mV @ 250μA | 6.6A | 27nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ZXMC3AM832TA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/diodesincorporated-zxmc3am832ta-datasheets-3845.pdf | 8-VDFN Exposed Pad | 3mm | 1mm | 2mm | Lead Free | 8 | 299.994654mg | 8 | EAR99 | LOW THRESHOLD | e3 | Matte Tin (Sn) | 1.7W | DUAL | FLAT | 260 | 8 | 40 | 2.45W | 2 | Other Transistors | Not Qualified | 1.5 ns | 2.8ns | 7.5 ns | 11.3 ns | 2.1A | 20V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 3.7A | 30V | N and P-Channel | 190pF @ 25V | 120m Ω @ 2.5A, 10V | 1V @ 250μA (Min) | 2.9A 2.1A | 3.9nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||
| IRF7103PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/infineontechnologies-irf7103trpbf-datasheets-4741.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 12 Weeks | EAR99 | e3 | Matte Tin (Sn) | YES | GULL WING | 260 | IRF7103PBF | 30 | 2 | FET General Purpose Power | Not Qualified | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 2W | 50V | 50V | METAL-OXIDE SEMICONDUCTOR | 2W | MS-012AA | 3A | 10A | 0.13Ohm | 2 N-Channel (Dual) | 290pF @ 25V | 130m Ω @ 3A, 10V | 3V @ 250μA | 3A | 30nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||
| IRF7343PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf7343trpbf-datasheets-5047.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 14 Weeks | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | IRF7343PBF | NOT SPECIFIED | 2 | Other Transistors | Not Qualified | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | 2W | 55V | 55V | METAL-OXIDE SEMICONDUCTOR | 2W | MS-012AA | 4.7A | 38A | 0.05Ohm | 72 mJ | N and P-Channel | 740pF @ 25V | 50m Ω @ 4.7A, 10V | 1V @ 250μA | 4.7A 3.4A | 36nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||
| IRF7331PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf7331trpbf-datasheets-0543.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | YES | GULL WING | NOT SPECIFIED | IRF7331PBF | NOT SPECIFIED | 2 | FET General Purpose Power | Not Qualified | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 2W | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 2W | MS-012AA | 7A | 0.03Ohm | 2 N-Channel (Dual) | 1340pF @ 16V | 30m Ω @ 7A, 4.5V | 1.2V @ 250μA | 7A | 20nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7328PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-irf7328trpbf-datasheets-5865.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | HIGH RELIABILITY, ULTRA-LOW RESISTANCE | e3 | Matte Tin (Sn) | YES | GULL WING | NOT SPECIFIED | IRF7328PBF | NOT SPECIFIED | 2 | Other Transistors | Not Qualified | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 2W | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 2W | MS-012AA | 8A | 32A | 0.021Ohm | 2 P-Channel (Dual) | 2675pF @ 25V | 21m Ω @ 8A, 10V | 2.5V @ 250μA | 8A | 78nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||
| IRF7313PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | ROHS3 Compliant | 2002 | /files/infineontechnologies-irf7313trpbf-datasheets-4670.pdf | 8-SOIC (0.154, 3.90mm Width) | 28 Weeks | EAR99 | IRF7313PBF | 30V | 2W | 2 N-Channel (Dual) | 650pF @ 25V | 29m Ω @ 5.8A, 10V | 1V @ 250μA | 6.5A | 33nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7379PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | SMD/SMT | ENHANCEMENT MODE | RoHS Compliant | 2004 | /files/infineontechnologies-irf7379trpbf-datasheets-5371.pdf | 5.8A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Lead Free | 8 | No SVHC | 8 | EAR99 | AVALANCHE RATED, ULTRA LOW RESISTANCE | No | 2.5W | DUAL | GULL WING | IRF7379PBF | 2.5W | 2 | 17ns | 18 ns | 25 ns | 4.3A | 20V | 30V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 6.3 mm | 1V | 46A | 0.045Ohm | 30V | N and P-Channel | 520pF @ 25V | 1 V | 45m Ω @ 5.8A, 10V | 1V @ 250μA | 5.8A 4.3A | 25nC @ 10V | Standard |
