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ContactMOSFETs Transistors Arrays(4365)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Power - Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max |
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| DMN63D8LDW-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/diodesincorporated-dmn63d8ldw7-datasheets-3013.pdf | 6-TSSOP, SC-88, SOT-363 | Lead Free | 6 | 15 Weeks | No SVHC | 6 | yes | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | AEC-Q101 | 300mW | GULL WING | 260 | 40 | 2 | 3.3 ns | 3.2ns | 6.3 ns | 12 ns | 220mA | 20V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 0.22A | 4.5Ohm | 2 N-Channel (Dual) | 22pF @ 25V | 2.8 Ω @ 250mA, 10V | 1.5V @ 250μA | 870nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||
| STL105DN4LF7AG | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, STripFET™ F7 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | RoHS Compliant | /files/stmicroelectronics-stl105dn4lf7ag-datasheets-2041.pdf | 8-PowerVDFN | ACTIVE (Last Updated: 8 months ago) | compliant | NOT SPECIFIED | NOT SPECIFIED | 40V | 94W | 2 N-Channel (Dual) | 1594pF @ 25V | 4.5m Ω @ 12A, 10V | 2.5V @ 250μA | 40A Tc | 27.5nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N7002KDW-HF | Comchip Technology | $0.34 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/comchiptechnology-2n7002kdwhf-datasheets-2057.pdf | 6-TSSOP, SC-88, SOT-363 | 1 Weeks | 60V | 150mW Ta | 2 N-Channel (Dual) | 40pF @ 10V | 5 Ω @ 500mA, 10V | 2.5V @ 1mA | 340mA Ta | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFHM792TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-irfhm792trpbf-datasheets-1984.pdf | 8-PowerVDFN | Lead Free | 8 | 12 Weeks | 8 | EAR99 | No | e3 | Matte Tin (Sn) | 2.3W | IRFHM792PBF | Dual | 2.3W | 2 | FET General Purpose Power | 3.4 ns | 4.7ns | 2.6 ns | 5.2 ns | 2.3A | 20V | SILICON | DRAIN | SWITCHING | 100V | METAL-OXIDE SEMICONDUCTOR | 3.4A | 14A | 0.195Ohm | 100V | 2 N-Channel (Dual) | 251pF @ 25V | 195m Ω @ 2.9A, 10V | 4V @ 10μA | 6.3nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||
| DMN62D0UT-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 6-TSSOP, SC-88, SOT-363 | 14 Weeks | SOT-363 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMD84100 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/onsemiconductor-fdmd84100-datasheets-2015.pdf | 8-PowerWDFN | 5.1mm | 750μm | 3.4mm | 8 | 12 Weeks | 153.4014mg | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | 23W | NO LEAD | NOT SPECIFIED | 2 | Dual | NOT SPECIFIED | 2 | FET General Purpose Power | 8.4 ns | 2.6ns | 2.8 ns | 14 ns | 21A | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 2.1W | 7A | 100V | 2 N-Channel (Dual) Common Source | 980pF @ 50V | 20m Ω @ 7A, 10V | 4V @ 250μA | 7A | 16nC @ 10V | Standard | |||||||||||||||||||||||||||||
| NX138BKSF | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | ENHANCEMENT MODE | ROHS3 Compliant | /files/nexperiausainc-nx138bksx-datasheets-7925.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 4 Weeks | AEC-Q101; IEC-60134 | YES | GULL WING | 6 | 2 | R-PDSO-G6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 860mW | 0.21A | 2 N-Channel (Dual) | 20pF @ 30V | 3.5 Ω @ 200mA, 10V | 1.5V @ 250μA | 330mA Tc | 0.7nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||
| NX3008PBKVL | Nexperia USA Inc. | $0.23 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/nexperiausainc-nx3008pbk215-datasheets-5026.pdf | TO-236-3, SC-59, SOT-23-3 | 4 Weeks | 30V | 350mW Ta 1.14W Tc | 2 P-Channel (Dual) | 46pF @ 15V | 4.1 Ω @ 200mA, 4.5V | 1.1V @ 250μA | 230mA Ta | 0.72nC @ 4.5V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMP31D7LDW-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/diodesincorporated-dmp31d7ldw13-datasheets-1992.pdf | 6-TSSOP, SC-88, SOT-363 | 23 Weeks | 2 P-Channel (Dual) | 900m Ω @ 420mA, 10V | 2.6V @ 250μA | 550mA Ta | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN67D8LDW-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmn67d8ldw13-datasheets-1994.pdf | 6-TSSOP, SC-88, SOT-363 | 16 Weeks | yes | EAR99 | e3 | Matte Tin (Sn) | 320mW | NOT SPECIFIED | NOT SPECIFIED | 230mA | 60V | 320mW | 2 N-Channel (Dual) | 22pF @ 25V | 5 Ω @ 500mA, 10V | 2.5V @ 250μA | 0.82nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMP2900UW-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 23 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN33D8LDW-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/diodesincorporated-dmn33d8ldw7-datasheets-5901.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 16 Weeks | EAR99 | HIGH RELIABILITY | e3 | Matte Tin (Sn) | AEC-Q101 | 350mW | GULL WING | 260 | 30 | 2 | R-PDSO-G6 | 250mA | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 350mW | 0.25A | 3Ohm | 2 N-Channel (Dual) | 48pF @ 5V | 2.4 Ω @ 250mA, 10V | 1.5V @ 100μA | 1.23nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||
| BSM300D12P3E005 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | -40°C~150°C TJ | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-bsm300d12p3e005-datasheets-2006.pdf | Module | 19 Weeks | NOT SPECIFIED | NOT SPECIFIED | 1200V 1.2kV | 1260W Tc | 2 N-Channel (Half Bridge) | 14000pF @ 10V | 5.6V @ 91mA | 300A Tc | Silicon Carbide (SiC) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SISF02DN-T1-GE3 | Vishay Siliconix | $1.38 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sisf02dnt1ge3-datasheets-1923.pdf | PowerPAK® 1212-8SCD | 14 Weeks | PowerPAK® 1212-8SCD | 25V | 5.2W Ta 69.4W Tc | 2 N-Channel (Dual) Common Drain | 2650pF @ 10V | 3.5mOhm @ 7A, 10V | 2.3V @ 250μA | 30.5A Ta 60A Tc | 56nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIZ250DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-siz250dtt1ge3-datasheets-1886.pdf | 8-PowerWDFN | 8-PowerPair® (3.3x3.3) | 60V | 4.3W Ta 33W Tc | 2 N-Channel (Dual) | 840pF 790pF @ 30V | 12.2mOhm @ 10A, 10V, 12.7mOhm @ 10A, 10V | 2.4V @ 250μA | 14A Ta 38A Tc | 21nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMG6301UDW-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2012 | /files/diodesincorporated-dmg6301udw7-datasheets-5939.pdf | 6-TSSOP, SC-88, SOT-363 | 15 Weeks | 6.010099mg | 300mW | 2 | Dual | SOT-363 | 27.9pF | 2.9 ns | 1.8ns | 2.3 ns | 6.6 ns | 240mA | 8V | 25V | 300mW | 3.8Ohm | 25V | 2 N-Channel (Dual) | 27.9pF @ 10V | 4Ohm @ 400mA, 4.5V | 1.5V @ 250μA | 240mA | 0.36nC @ 4.5V | Standard | 4 Ω | ||||||||||||||||||||||||||||||||||||||||||||
| BSC155N06NDATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™-T2 | Surface Mount | -55°C~175°C TJ | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/infineontechnologies-bsc155n06ndatma1-datasheets-1943.pdf | 8-PowerVDFN | 6 | 26 Weeks | not_compliant | e3 | Tin (Sn) | YES | FLAT | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-F6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 50W Tc | 20A | 80A | 0.0155Ohm | 40 mJ | 2 N-Channel (Dual) | 2250pF @ 30V | 15.5m Ω @ 17A, 10V | 4V @ 20μA | 20A Tc | 29nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||
| NX138AKSF | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | ENHANCEMENT MODE | ROHS3 Compliant | /files/nexperiausainc-nx138aksx-datasheets-0887.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 4 Weeks | IEC-60134 | YES | GULL WING | 6 | 2 | R-PDSO-G6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 1.33W | 0.17A | 2 N-Channel (Dual) | 20pF @ 30V | 4.5 Ω @ 170mA, 10V | 1.5V @ 250μA | 170mA Ta | 1.4nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ204EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sqj204ept1ge3-datasheets-1945.pdf | PowerPAK® SO-8 Dual | 12 Weeks | PowerPAK® SO-8 Dual Asymmetric | 12V | 27W Tc 48W Tc | 2 N-Channel (Dual) Asymmetrical | 1400pF @ 6V 3700pF @ 6V | 8.3mOhm @ 4A, 10V, 3mOhm @ 10A, 10V | 1.5V @ 250μA | 20A Tc 60A Tc | 20nC @ 10V, 50nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC0924NDIATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-bsc0924ndiatma1-datasheets-1903.pdf | 8-PowerTDFN | 6 | 18 Weeks | 8 | no | EAR99 | Tin | not_compliant | e3 | 1W | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-N6 | 32A | 20V | SILICON | SERIES, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN SOURCE | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 1.3A | 0.007Ohm | 2 N-Channel (Dual) Asymmetrical | 1160pF @ 15V | 5m Ω @ 20A, 10V | 2V @ 250μA | 17A 32A | 10nC @ 4.5V | Logic Level Gate, 4.5V Drive | ||||||||||||||||||||||||||||||||||||||
| BSC072N04LDATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™-T2 | Surface Mount | -55°C~175°C TJ | 1 (Unlimited) | ROHS3 Compliant | /files/infineontechnologies-bsc072n04ldatma1-datasheets-1912.pdf | 8-PowerVDFN | 26 Weeks | 40V | 65W Tc | 2 N-Channel (Dual) | 3990pF @ 20V | 7.2m Ω @ 17A, 10V | 2.2V @ 30μA | 20A Tc | 52nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMC4015SSD-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/diodesincorporated-dmc4015ssd13-datasheets-1857.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 23 Weeks | 8 | EAR99 | e3 | Matte Tin (Sn) | 1.2W | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | 6.2A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | 40V | 40V | METAL-OXIDE SEMICONDUCTOR | 0.02Ohm | N and P-Channel | 1810pF @ 20V | 15m Ω @ 3A, 10V | 3V @ 250μA | 8.6A 6.2A | 40nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||
| IRF40H233XTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/infineontechnologies-irf40h233xtma1-datasheets-1901.pdf | 12 Weeks | 40V | 2 N-Channel (Dual) | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC112N06LDATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™-T2 | Surface Mount | -55°C~175°C TJ | 1 (Unlimited) | ROHS3 Compliant | /files/infineontechnologies-bsc112n06ldatma1-datasheets-1942.pdf | 8-PowerVDFN | 26 Weeks | 60V | 65W Tc | 2 N-Channel (Dual) | 4020pF @ 30V | 11.2m Ω @ 17A, 10V | 2.2V @ 28μA | 20A Tc | 55nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SISF04DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sisf04dnt1ge3-datasheets-1910.pdf | PowerPAK® 1212-8SCD | PowerPAK® 1212-8SCD | 30V | 5.2W Ta 69.4W Tc | 2 N-Channel (Dual) Common Drain | 2600pF @ 15V | 4mOhm @ 7A, 10V | 2.3V @ 250μA | 30A Ta 108A Tc | 60nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC076N04NDATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™-T2 | Surface Mount | -55°C~175°C TJ | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsc076n04ndatma1-datasheets-1893.pdf | 8-PowerVDFN | 26 Weeks | 40V | 2.3W Ta 65W Tc | 2 N-Channel (Dual) | 2950pF @ 20V | 7.6m Ω @ 17A, 10V | 4V @ 30μA | 20A Tc | 38nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIZF300DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sizf300dtt1ge3-datasheets-1894.pdf | 8-PowerWDFN | 14 Weeks | 8-PowerPair® (6x5) | 30V | 3.8W Ta 48W Tc 4.3W Ta 74W Tc | 2 N-Channel (Dual) | 1100pF @ 15V 3150pF @ 15V | 4.5mOhm @ 10A, 10V, 1.84mOhm @ 10A, 10V | 2.2V @ 250μA | 23A Ta 75A Tc 34A Ta 141A Tc | 22nC @ 10V, 62nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STL76DN4LF7AG | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, STripFET™ F7 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | ENHANCEMENT MODE | RoHS Compliant | /files/stmicroelectronics-stl76dn4lf7ag-datasheets-1911.pdf | 8-PowerVDFN | 6 | compliant | YES | FLAT | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-F6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | METAL-OXIDE SEMICONDUCTOR | 71W Tc | 40A | 160A | 0.012Ohm | 2 N-Channel (Dual) | 956pF @ 25V | 6m Ω @ 10A, 10V | 2.5V @ 250μA | 40A Tc | 17nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||
| SIZ240DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-siz240dtt1ge3-datasheets-1915.pdf | 8-PowerWDFN | 8-PowerPair® (3.3x3.3) | 40V | 4.3W Ta 33W Tc | 2 N-Channel (Dual) | 1180pF 1070pF @ 20V | 8.05mOhm @ 10A, 10V, 8.41mOhm @ 10A, 10V | 2.4V @ 250μA | 17.2A Ta 48A Tc 16.9A Ta 47A Tc | 23nC, 22nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STL13DP10F6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DeepGATE™, STripFET™ VI | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ROHS3 Compliant | /files/stmicroelectronics-stl13dp10f6-datasheets-1916.pdf | 8-PowerVDFN | Lead Free | 8 | ACTIVE (Last Updated: 8 months ago) | EAR99 | 62.5W | NOT SPECIFIED | STL13 | NOT SPECIFIED | 13A | 100V | 62.5W | 2 P-Channel (Dual) | 864pF @ 25V | 180m Ω @ 1.7A, 10V | 4V @ 250μA | 16.5nC @ 10V | Logic Level Gate |
