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ContactIRFHM792TRPBF
IRFHM792TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IRFHM792TRPBF
- Package: 8-PowerVDFN
- Datasheet:
- Stock: 7512
- Description: IRFHM792TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Drain to Source Breakdown Voltage | 100V |
| Pulsed Drain Current-Max (IDM) | 14A |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Standard |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 12 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerVDFN |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2013 |
| Series | HEXFET® |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Max Power Dissipation | 2.3W |
| Base Part Number | IRFHM792PBF |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.3W |
| Case Connection | DRAIN |
| Turn On Delay Time | 3.4 ns |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 195m Ω @ 2.9A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 10μA |
| Input Capacitance (Ciss) (Max) @ Vds | 251pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | 6.3nC @ 10V |
| Rise Time | 4.7ns |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time (Typ) | 2.6 ns |
| Turn-Off Delay Time | 5.2 ns |
| Continuous Drain Current (ID) | 2.3A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 3.4A |
| Drain-source On Resistance-Max | 0.195Ohm |
IRFHM792TRPBF Description
The IRFHM792TRPBF combines cutting-edge DirectFETTM packaging with the most modern HEXFET? Power MOSFET Silicon technology. When application note AN-1035 defining the manufacturing procedures and methods is followed, the DirectFET package is compatible with the layout geometries currently used in power applications, PCB assembly equipment, and vapor phase, infrared, or convection soldering techniques. The DirectFET package's two-sided cooling reduces thermal resistance by 80% compared to the prior-best while boosting thermal transfer in power systems.
IRFHM792TRPBF Features
RDS low on (v195m (2)
(v 129/W) Low Thermal Resistance to PCB
(v1.2mm) Low Profile
Business Standard Pinout
Compatibility with Current Surface Mount Methods
No Lead, Bromide, or Haloqen MSL1, Industrial Qualification, RoHS Compliant
IRFHM792TRPBF Applications
? Primary DC-DC Switch
? Battery Monitoring for 48V
