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SIZ250DT-T1-GE3 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Vishay Siliconix stock available at Feilidi
- Manufacturer: Vishay Siliconix
- NO: 880-SIZ250DT-T1-GE3
- Package: 8-PowerWDFN
- Datasheet:
- Stock: 7612
- Description: SIZ250DT-T1-GE3 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Vishay Siliconix stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerWDFN |
| Supplier Device Package | 8-PowerPair® (3.3x3.3) |
| Operating Temperature | -55°C~150°C TJ |
| Series | TrenchFET® Gen IV |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Power - Max | 4.3W Ta 33W Tc |
| FET Type | 2 N-Channel (Dual) |
| Rds On (Max) @ Id, Vgs | 12.2mOhm @ 10A, 10V, 12.7mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id | 2.4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 840pF 790pF @ 30V |
| Current - Continuous Drain (Id) @ 25°C | 14A Ta 38A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 21nC @ 10V |
| Drain to Source Voltage (Vdss) | 60V |
| FET Feature | Standard |
| RoHS Status | ROHS3 Compliant |
SIZ250DT-T1-GE3 DESCRIPTION
Dual Gate MOSFETs are a form of MOSFET with two gates - they can be used to provide additional isolation between drain & gate & as mixers for RF applications.
SIZ250DT-T1-GE3 FEATURES
• TrenchFET® Gen IV power MOSFETs
• 100 % Rg and UIS tested
• Optimized Qgs/Qgs ratio improves switching
characteristics
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
SIZ250DT-T1-GE3 APPLICATIONS
• CPU core power
• Computer / server peripherals
• POL
• Synchronous buck converter
• Telecom DC/DC
